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    2SK2018 Search Results

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    Fuji Electric Co Ltd 2SK2018-01S

    TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,10A I(D),TO-252
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SK2018-01S 1,223
    • 1 $0.45
    • 10 $0.45
    • 100 $0.45
    • 1000 $0.1875
    • 10000 $0.1875
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    Fuji Electric Co Ltd 2SK2018-01S-TB16R

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SK2018-01S-TB16R 1,090
    • 1 $1.46
    • 10 $1.46
    • 100 $0.73
    • 1000 $0.584
    • 10000 $0.584
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    Fuji Electric Co Ltd 2SK201801STB16R

    Electronic Component
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA 2SK201801STB16R 4,000
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    2SK2018 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK2018 Fuji Electric N-channel MOS-FET Original PDF
    2SK2018-01 Fuji Electric N-channel MOS-FET Original PDF
    2SK2018-01 Collmer Semiconductor FAP-II Series / FAP-IIIA Series MOSFETS Scan PDF
    2SK2018-01 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK2018-01L Fuji Electric N-channel MOS-FET Original PDF
    2SK2018-01L Collmer Semiconductor F-III Series, FAP-III Series MOSFETs Scan PDF
    2SK2018-01L Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK2018-01S Fuji Electric N-channel MOS-FET Original PDF
    2SK2018-01S Collmer Semiconductor F-III Series, FAP-III Series MOSFETs Scan PDF
    2SK2018-01S Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK2018-L Fuji Electric Silicon N-channel MOS-FET Original PDF
    2SK2018-S Fuji Electric Silicon N-channel MOS-FET Original PDF

    2SK2018 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SK2018-01L

    Abstract: No abstract text available
    Text: 2SK2018-01L,S N-channel MOS-FET FAP-III Series 60V > Features - 0,1Ω 10A 20W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof > Applications - Motor Control - General Purpose Power Amplifier


    Original     		2SK2018-01L PDF

    2SK2018-01L

    Abstract: No abstract text available
    Text: 2SK2018-01L,S N-channel MOS-FET FAP-III Series 60V > Features - 0,1Ω 10A 20W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof > Applications - Motor Control - General Purpose Power Amplifier


    Original     		2SK2018-01L PDF

    2SK2018-01L

    Abstract: No abstract text available
    Text: 2SK2018-01L,S N-channel MOS-FET FAP-III Series 60V > Features - 0,1Ω 10A 20W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof > Applications - Motor Control - General Purpose Power Amplifier


    Original     		2SK2018-01L PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK2018-01L,S FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-III SERIES Outline Drawings K-Pack L K-Pack(S) ±0.2 5±0.2 Applications 2.5 ±0.5 +0.2 0 .9 —0.1 0.9 +0.2 6.5 1.5 —0.1 High current Low on-resistance No secondary breakdown Low driving power


    Original     		2SK2018-01L PDF

    2SK2018-01L

    Abstract: No abstract text available
    Text: 2SK2018-01L,S FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-III SERIES Outline Drawings K-Pack L K-Pack(S) 6.5 ±0.2 +0.2 0 .9 —0.1 0.9 Applications 2.5 ±0.5 5.5 ±0.2 5±0.2 +0.2 High current Low on-resistance No secondary breakdown Low driving power


    Original     		2SK2018-01L PDF

    2SK1083-MR

    Abstract: 2SK1096-MR 2SK1946-01MR 2SK2018-01L 2SK2098-01MR 2SK2226-01L 2SK2248-01L 2SK2249-01L 2SK2516-01L 2SK2517-01L
    Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET F-III / FAP-III シリーズ（Nチャネル） F-III / FAP-III series N channel ロジックレベル駆動／アバランシェ耐量保証 Logic level drive / Avalanche rated 形 式


    Original     		2SK2248-01L, 2SK2249-01L, 2SK2516-01L, 2SK1083-MR 2SK2018-01L, 2SK1096-MR 2SK1946-01MR 2SK2517-01L, 2SK2832-01R 2SK2098-01MR 2SK1083-MR 2SK1096-MR 2SK1946-01MR 2SK2018-01L 2SK2098-01MR 2SK2226-01L 2SK2248-01L 2SK2249-01L 2SK2516-01L 2SK2517-01L PDF

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 PDF

    2SK1969

    Abstract: 2SK1508 2SK2691 2SK2690 2SJ477 2SK2906 TO-220F15 2SK1390 2SK1083 2SK1881
    Text: POWER MOS FET Feb-00 Quick Selection Guide F-I series High speed switching F-II series FAP-II series High speed switching Avalanche rated FAP-IIA series Low-on resistance Low typical capacitance F-III series P channel Avalanche rated F-III series FAP-III series


    Original     		Feb-00 2SK2248 2SK2249 2SK2048 O-220F15 2SK2808 2SK2890 2SK2689 2SK2891 2SK2893 2SK1969 2SK1508 2SK2691 2SK2690 2SJ477 2SK2906 TO-220F15 2SK1390 2SK1083 2SK1881 PDF

    F5022

    Abstract: f5017h F5021H f5016h 2sk3528 2sk2696 F5038H 2SK3102-01R 2SK2696-01MR F5018
    Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET Super FAP-Gシリーズ Super FAP-G series 低オン抵抗低ゲート容量 Low-on resistance and low gate charge 形 式 Device type VDSS ID ID pulse Volts Amps. Amps. 2SK3474-01


    Original     		2SK3474-01 2SK3537-01MR 2SK3554-01 2SK3555-01MR 2SK3556-01L, 2SK3535-01 2SK3514-01 2SK3515-01MR 2SK3516-01L, 2SK3517-01 F5022 f5017h F5021H f5016h 2sk3528 2sk2696 F5038H 2SK3102-01R 2SK2696-01MR F5018 PDF

    2SK2018-01

    Abstract: 2SK2018-01L T151
    Text: 2SK2018-01L. S FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F • Features A P - I I I S E R I E S Outline Drawings • High current • Low on-resistance • No secondary breakdown • Low driving power • High forward Transconductance • Avalanche-proof


    OCR Scan     		2SK2018-01L. 60iisffl EgTS30 2SK2018-01 2SK2018-01L T151 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK2018-01L, S FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-III SERIES • F e a tu re s O u tlin e D ra w in g s • High current • Low on-resistance • No secondary breakdown ml • Low driving power • High forward Transconductance ri *r->


    OCR Scan     		2SK2018-01L, 20Kfi) PDF

    Untitled

    Abstract: No abstract text available
    Text: FU JI e'ike&rtJüUG 2SK2018-01L,S N-channel MOS-FET FAP-III Series 60V > Features - 0,1Q 10A 20W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof K-PACK L K-PACK S 2.3 ¿.5


    OCR Scan     		2SK2018-01L Temperat50 PDF

    2SK1011

    Abstract: 2SK1007-01 2SK1009-01 2SK1011-01 2SK1013-01 2SK1101-01M 2SK1221-01 2SK1222-01 2SK1917-01M 2sk1211
    Text: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M


    OCR Scan     		2SK1221-01 T0220 2SK1917-01M T0220F15 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M 2SK1011 2SK1013-01 2SK1222-01 2sk1211 PDF

    2sk1507

    Abstract: 2SK1011-01 2SK1018-01 2sk1018 2SK1820-01 2SK956 2SK1007-01 2SK1009-01 2SK1013-01 2SK1101-01M
    Text: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M


    OCR Scan     		2SK1221-01 T0220 2SK1917-01M T0220F15 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M 2sk1507 2SK1018-01 2sk1018 2SK1820-01 2SK956 2SK1013-01 PDF

    6DI15S-050

    Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
    Text: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140


    OCR Scan     		1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 1DI200Z-120 1DI200ZN-120 1DI200ZP-120 1DI300M-050 6DI15S-050 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSFETs F-lll Series - Logic Level Operation, Low R ds ON 30-150 Volts Maximum Ratinas Device Type V dss (V) 2SK1505MR 2SK2048L.S 2SK1388 2SK1083MR 2SK1096MR 2SK1086MR 2SK1881L.S 2SKl387MR " IS K iW " — '2SK1B56 ; 2SK1389 2SK1390R 2SK2049 2SK1087MR 2SK1817MR


    OCR Scan     		2SK1505MR 2SK2048L 2SK1388 2SK1083MR 2SK1096MR 2SK1389 2SK1390R 2SK2049 2SK1087MR 2SK1817MR PDF

    2SK1083MR

    Abstract: 2SK1086MR 2SK1096MR 2SK1387MR 2SK1388 2SK1505MR 2SK1881L 2SK2048L 2sk1506
    Text: MOSFETs F-lll Series - Logic Level Operation, Low R d s o n 3 0 - 1 5 0 Volts Device Type Maximum Ratinas V dss (V) Pd (W) Id (A ) 2SK1505MR 2SK2048L.S 2SK1388 2SK1083MR 2SK1096MR 2SK1086MR 2SK1881L.S 2SK1387MR 2SK1089 2SK1508 2SK1389 2SK1390R 2SK2049


    OCR Scan     		2SK1505MR T0220F15 2SK2048L 2SK1388 T0-220 2SK1083MR T0-220F15 2SK1096MR 2SK1086MR 2SK1387MR 2SK1881L 2sk1506 PDF

    2SK1012

    Abstract: 2SK1015 2SK1018-01 2SK1082 2SK1211 2SK1545 2sk1018 2SK1081-01 2SK1102 2SK1917-01M
    Text: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M


    OCR Scan     		2SK1221-01 T0220 2SK1917-01M T0220F15 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M 2SK1012 2SK1015 2SK1018-01 2SK1082 2SK1211 2SK1545 2sk1018 2SK1081-01 2SK1102 PDF

    Untitled

    Abstract: No abstract text available
    Text: <s MOSFETs FAP-II Series V G S ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 250 - 900 Volts Device Type 2 S K 1 006-01M 2 S K 1 007-01 2 SK 1 009-01 2 S K 1 386-01 2 S K 1 0 1 1-01 2SK1101-01M 2SK1013-01 2SK1015-01 2SK1916-01 2SK1017-01 2 SK 1 008-01


    OCR Scan     		2SK1006-01M 2SK1007-01 2SK1009-01 2SK1386-01 2SK1011-01 2SK1101-01M 2SK1013-01 2SK1015-01 2SK1916-01 2SK1017-01 PDF

    2SK2652

    Abstract: 2SK2771-01R
    Text: MOSFET QUICK REFERENCE GUIDE -30V to 300V BY PACKAGE TYPE F-l: Page 30 FAP-IIA: Page 32 FAP-IIIA: Page 34 FAP-I: Page 30 FAP-IIS: Page 33 FAP-IIIB: Page 35 F-ll: Page 30 F-lll: Page 34 FAP-IIIBH: Page 35 FAP-II: Page 31 FAP-III: Page 34 F-V: Page 35 SURFACE MOUNT


    OCR Scan     		F8006N F7007N 2SJ472-01L T0-220 2SJ314-01L 2SJ473-01L 2SJ474-01L 2SJ476-01L 2SK2760-01R 2SK2148-01R 2SK2652 2SK2771-01R PDF

    TO-220F15

    Abstract: 2630 2SK1388 2SK2248-01L 2SK1083MR 2SK1086MR 2SK1096MR 2SK1387MR 2SK1505MR 2SK1508
    Text: MOSFETs F-lll Series - Logic Level Operation, Low R d s o n 3 0 - 1 5 0 Volts Device Type Maximum Ratinas V dss (V) Pd (W) Id ( A ) 2SK1505MR 2SK2048L.S 2SK1388 2SK1083MR 2SK1096MR 2SK1086MR 2SK1881L.S 2SK1387MR 2SK1089 2SK1508 2SK1389 2SK1390R 2SK2049


    OCR Scan     		2SK1505MR O-220F15 2SK2048L 2SK1388 O-220 2SK1083MR 2SK1096MR 2SK1086MR TO-220F15 2630 2SK2248-01L 2SK1387MR 2SK1508 PDF

    2SK1101-01M

    Abstract: 2SK1006-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1013-01 2SK1015-01 2SK1386-01
    Text: MOSFETs FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 250 - 900 Volts Device Type 2SK1006-01M 2SK1007-01 2SK1009-01 2SK1386-01 2SK1011-01 2SK1101-01M 2SK1013-01 2SK1015-01 2SK1916-01 2SK1017-01 2SK1008-01 2SK1010-01 2SK1820-01


    OCR Scan     		2SK1006-01M T0220F15 2SK1007-01 T0220 2SK1009-01 2SK1386-01 2SK1011-01 2SK1101-01M 2SK1013-01 2SK1015-01 PDF

    2SK1014-01

    Abstract: 2SK151
    Text: MOSFETs FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 250 - 900 Volts Device Type 2SK1006-01M 2SK1007-01 2SK1009-01 2SK1386-01 2SK1011-01 2SK1101-01M 2SK1013-01 2SK1015-01 2SK1916-01 2SK1017-01 2SK1008-01 2SK1010-01 2SK1820-01


    OCR Scan     		2SK1006-01M 2SK1007-01 2SK1009-01 2SK1386-01 2SK1011-01 2SK1101-01M 2SK1013-01 2SK1015-01 2SK1916-01 2SK1017-01 2SK1014-01 2SK151 PDF

    2SK1221-01

    Abstract: No abstract text available
    Text: COL L HE R S E M I C O N D U C T O R INC b3E D • 5 2 3 8 7^ 2 0 0 0 1 Ô7 1 541 « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvpe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01


    OCR Scan     		2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M 2SK1013-01 2SK1222-01 2SK1015-01 2SK1916-01 PDF