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Toshiba America Electronic Components 2SK1830-TE85L
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	2SK1830-TE85L		13,766			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	2SK1830-TE85L		4,785		17	1 - 10 - 100 $0.15 1000 $0.09 10000 $0.06	Buy Now
Toshiba America Electronic Components 2SK1830TE85L 50 MA, 20 V, N-CHANNEL, SI, SMALL SIGNAL, MOSFET
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Quest Components	2SK1830TE85L		48,000			1 $0.6 10 $0.6 100 $0.6 1000 $0.6 10000 $0.18	Buy Now
	2SK1830TE85L		11,012			1 $0.48 10 $0.48 100 $0.48 1000 $0.48 10000 $0.084	Buy Now
	2SK1830TE85L		3,828			1 $0.4 10 $0.4 100 $0.12 1000 $0.08 10000 $0.08	Buy Now
Toshiba America Electronic Components 2SK1830 50 MA, 20 V, N-CHANNEL, SI, SMALL SIGNAL, MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2SK1830		2,751			1 $0.285 10 $0.285 100 $0.285 1000 $0.152 10000 $0.1235	Buy Now
Win Source Electronics	2SK1830		57,000			1 - 10 - 100 - 1000 $0.1563 10000 $0.1311	Buy Now
Others 2SK1830 (TE85L) INSTOCK
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Chip 1 Exchange	2SK1830 (TE85L)		2,500			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Toshiba America Electronic Components 2SK1830 T5L
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Win Source Electronics	2SK1830 T5L		21,000			1 - 10 - 100 - 1000 $0.186 10000 $0.156	Buy Now

2SK1830 Datasheets (9)

Part	Manufacturer	Description	Datasheet Type	PDF
2SK1830	Toshiba	Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: SSM; XJE016 JEITA: SC-75; Number of Pins: 3; V th (V): (min 0.5) (max 1.5); R DS On 20 (max 40); Drain-Source Voltage (V): (max 20); Drain Current (mA): (max 50)	Original	PDF
2SK1830	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SK1830	Toshiba	TRANS MOSFET N-CH 20V 0.05A 3(2-2H1B)	Scan	PDF
2SK1830	Toshiba	Silicon N channel field effect transistor for high speed switching applications and analog switch applications	Scan	PDF
2SK1830	Toshiba	FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE	Scan	PDF
2SK1830TE85L	Toshiba	2SK1830 - TRANSISTOR 50 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal	Original	PDF
2SK1830(TE85L,F)	Toshiba	2SK1830 - Trans MOSFET N-CH 20V 0.05A 3-Pin SSM T/R	Original	PDF
2SK1830TE85LF	Toshiba	2SK1830TE85LF - Trans MOSFET N-CH 20V 0.05A 3-Pin SSM T/R	Original	PDF
2SK1830TE85R	Toshiba	2SK1830 - TRANSISTOR 50 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal	Original	PDF

2SK1830 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2SJ347 Abstract: 2SK1830 Text: 2SJ347 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ347 High Speed Switching Applications Analog Switch Applications • Low threshold voltage: Vth = −0.5 to −1.5 V • High speed • Small package • Complementary to 2SK1830 Marking	Original	2SJ347 2SK1830 2SJ347 2SK1830	PDF
Untitled Abstract: No abstract text available Text: HN7G01FU Preliminary TOSHIBA Multi Chip Discrete Device HN7G01FU Power Management Switch Application Driver Circuit Application Interface Circuit Application • Q1 transistor : 2SA1955 equivalent • Q2 (MOS-FET): 2SK1830 equivalent Unit: mm Q1 (transistor) Absolute Maximum Ratings (Ta = 25°C)	Original	HN7G01FU 2SA1955 2SK1830	PDF
Untitled Abstract: No abstract text available Text: 2SK1830 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1830 High Speed Switching Applications Analog Switch Applications • 2.5 V gate drive • Low threshold voltage: Vth = 0.5~1.5 V • High speed • Enhancement-mode • Small package Marking	Original	2SK1830	PDF
2SK1830 Abstract: HN7G02FU RN2110 Text: HN7G02FU TOSHIBA Multi Chip Discrete Device HN7G02FU Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application. Unit: mm Q1 transistor : RN2110 Equivalent Q2 (MOS-FET): 2SK1830 Equivalent	Original	HN7G02FU RN2110 2SK1830 HN7G02FU	PDF
2SA1955 Abstract: 2SK1830 HN7G01FU HIGH POWER MOSFET TOSHIBA 2SK1830 MOSFET Text: HN7G01FU Preliminary TOSHIBA Multi Chip Discrete Device HN7G01FU Power Management Switch Application Driver Circuit Application Interface Circuit Application • Q1 transistor : 2SA1955 equivalent • Q2 (MOS-FET): 2SK1830 equivalent Unit: mm Q1 (transistor) Maximum Ratings (Ta = 25°C)	Original	HN7G01FU 2SA1955 2SK1830 HN7G01FU HIGH POWER MOSFET TOSHIBA 2SK1830 MOSFET	PDF
2SJ347 Abstract: 2SK1830 Toshiba 2SJ Text: 2SJ347 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ347 High Speed Switching Applications Analog Switch Applications • Low threshold voltage: Vth = −0.5~−1.5 V • High speed • Small package • Complementary to 2SK1830 Marking Unit: mm	Original	2SJ347 2SK1830 2SJ347 2SK1830 Toshiba 2SJ	PDF
2SA1955 Abstract: 2SK1830 HN7G01FU 2SK1830 MOSFET Text: HN7G01FU Preliminary TOSHIBA Multi Chip Discrete Device HN7G01FU Power Management Switch Application Driver Circuit Application Interface Circuit Application • Q1 transistor : 2SA1955 equivalent • Q2 (MOS-FET): 2SK1830 equivalent Unit: mm Q1 (transistor) Absolute Maximum Ratings (Ta = 25°C)	Original	HN7G01FU 2SA1955 2SK1830 HN7G01FU 2SK1830 MOSFET	PDF
HN7G01FU Abstract: 2SA1955 2SK1830 Power MOSFET, toshiba HIGH POWER MOSFET TOSHIBA Text: HN7G01FU Preliminary TOSHIBA Multi Chip Discrete Device HN7G01FU Power Management Switch Application Driver Circuit Application Interface Circuit Application • Q1 transistor : 2SA1955 equivalent · Q2 (MOS-FET): 2SK1830 equivalent Unit: mm Q1 (transistor) Maximum Ratings (Ta = 25°C)	Original	HN7G01FU 2SA1955 2SK1830 HN7G01FU Power MOSFET, toshiba HIGH POWER MOSFET TOSHIBA	PDF
Untitled Abstract: No abstract text available Text: 2SK1830 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1830 High Speed Switching Applications Analog Switch Applications • 2.5 V gate drive • Low threshold voltage: Vth = 0.5 to 1.5 V • High speed • Enhancement-mode • Small package	Original	2SK1830	PDF
2SK1830 Abstract: HN7G05FU RN2301 Text: HN7G05FU TOSHIBA Multichip Discrete Device HN7G05FU Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications Unit: mm Q1 transistor : RN2301 equivalent Q2 (MOSFET): 2SK1830 equivalent	Original	HN7G05FU RN2301 2SK1830 HN7G05FU	PDF
Untitled Abstract: No abstract text available Text: 2SK1830 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1830 High Speed Switching Applications Analog Switch Applications • 2.5 V gate drive • Low threshold voltage: Vth = 0.5~1.5 V • High speed • Enhancement-mode • Small package Marking	Original	2SK1830	PDF
2SK1830 Abstract: HN7G02FU RN2110 Text: HN7G02FU TOSHIBA Multi Chip Discrete Device HN7G02FU Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application. Unit: mm Q1 transistor : RN2110 Equivalent Q2 (MOS-FET): 2SK1830 Equivalent	Original	HN7G02FU RN2110 2SK1830 HN7G02FU	PDF
2SK1830 Abstract: HN7G05FU RN2301 Text: HN7G05FU TOSHIBA Multichip Discrete Device HN7G05FU Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications Unit: mm Q1 transistor : RN2301 equivalent Q2 (MOSFET): 2SK1830 equivalent	Original	HN7G05FU RN2301 2SK1830 HN7G05FU	PDF
2SJ347 Abstract: 2SK1830 Toshiba 2SJ Text: 2SJ347 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ347 High Speed Switching Applications Analog Switch Applications • Low threshold voltage: Vth = −0.5~−1.5 V • High speed • Small package • Complementary to 2SK1830 Marking Unit: mm	Original	2SJ347 2SK1830 2SJ347 2SK1830 Toshiba 2SJ	PDF

2SJ347 Abstract: 2SK1830 Text: 2SJ347 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ347 High Speed Switching Applications Analog Switch Applications • Low threshold voltage: Vth = −0.5~−1.5 V · High speed · Small package · Complementary to 2SK1830 Marking Unit: mm	Original	2SJ347 2SK1830 2SJ347 2SK1830	PDF
Untitled Abstract: No abstract text available Text: SILICON N CHANNEL MOS TYPE 2SK1830 HIGH SPEED SW ITCHING APPLICATIONS. A N A L O G SWITCH APPLICATIONS. • 2.5 V olts G ate D rive. • Low Threshold V oltage : V th = 0 .5 ~ 1 .5 V . H igh Speed • Enhancem ent-M ode • S m a ll P ackage MARKING KI M A X IM U M RATINGS Ta = 25°C	OCR Scan	2SK1830	PDF
2SJ347 Abstract: 2SK1830 Text: TO SH IBA 2SJ347 TOSHIBA FIELD EFFECT TRANSISTOR HIGH SPEED SWITCHING APPLICATIONS SILICON P CHANNEL MOS TYPE 2SJ347 Unit in mm ANAROG SWITCH APPLICATIONS • Low Threshold Voltage : V t h = —0.5 ~ —1.5V • High Speed • Small Package • Complementary to 2SK1830	OCR Scan	2SJ347 2SK1830 2SJ347 2SK1830	PDF
2SJ347 Abstract: 2SK1830 Text: TOSHIBA 2SJ347 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ347 HIGH SPEED SWITCHING APPLICATIONS Unit in mm ANAROG SWITCH APPLICATIONS • Low Threshold Voltage : V ^ ——0.5~ —1.5V • High Speed • Small Package • Complementary to 2SK1830	OCR Scan	2SJ347 2SK1830 10//S 2SJ347 2SK1830	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA 2SK1830 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K18 3 0 HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS • 2.5V Gate Drive • Low Threshold Voltage : V£h = 0.5~1.5V • High Speed • Enhanncement-Mode • Small Package	OCR Scan	2SK1830	PDF
ei33 Abstract: 2SK1830 J-10 Text: TOSHIBA 2SK1830 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK1 830 HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS 2.5V Gate Drive Low Threshold Voltage : Vth = 0.5~1.5V High Speed Enhanncement-Mode Small Package EQUIVALENT CIRCUIT	OCR Scan	2SK1830 10//S ei33 2SK1830 J-10	PDF
Untitled Abstract: No abstract text available Text: TO SHIBA 2SK1830 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K1 8 3 0 HIGH SPEED SWITCHING APPLICATIONS Unit in mm ANALOG SWITCH APPLICATIONS 1.6 ± 0.2 0 .8 + 0.1 < -o ÖÖ + I 2.5V Gate Drive Low Threshold Voltage : V'th = 0.5~ 1.5V —Q —	OCR Scan	2SK1830	PDF
Untitled Abstract: No abstract text available Text: 2SJ347 T O SH IB A TOSHIBA FIELD EFFECT TRANSISTOR HIGH SPEED SWITCHING APPLICATIONS SILICON P CHANNEL MOS TYPE 2SJ347 Unit in mm ANAROG SWITCH APPLICATIONS • • • • Low Threshold Voltage : Vth= —0.5~ —1.5V High Speed Small Package Complementary to 2SK1830	OCR Scan	2SJ347 2SK1830	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA TENTATIVE HN7G01 FU TO SHIBA M U LTI CHIP DISCRETE DEVICE H N 7 G 0 1 FU Unit in mm POWER M A N A G E M E N T SWITCH APPLICATION 2.1 i 0,1 DRIVER CIRCUIT APPLICATION INTERFACE CIRCUIT APPLICATIO N Q1 Transistor : 2SA1955 Equivalent Q2 (MOS-FET) : 2SK1830 Equivalent	OCR Scan	HN7G01 2SA1955 2SK1830 HN7G01FU	PDF
2SA1955 Abstract: 2SK1830 HN7G01FU Scans-005646 HN7G01 marking za mosfet MOSFET MARKING ZA Text: TO SH IBA TENTATIVE HN7G01FU TOSHIBA MULTI CHIP DISCRETE DEVICE H N 7 G 0 1 FU Unit in mm POWER MANAGEMENT SWITCH APPLICATION 2.1 i 0.1 DRIVER CIRCUIT APPLICATION INTERFACE CIRCUIT APPLICATION Q1 Transistor : 2SA1955 Equivalent Q2 (MOS-FET) : 2SK1830 Equivalent	OCR Scan	HN7G01FU N7G01FU 2SA1955 2SK1830 HN7G01FU Scans-005646 HN7G01 marking za mosfet MOSFET MARKING ZA	PDF

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2SK1830 Search Results

2SK1830 Price and Stock

Toshiba America Electronic Components 2SK1830-TE85L

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Toshiba America Electronic Components 2SK1830 T5L

2SK1830 Datasheets (9)

2SK1830 Datasheets Context Search

2SJ347

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2SK1830

2SA1955

2SJ347

2SA1955

HN7G01FU

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2SK1830

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2SK1830

2SK1830

2SJ347

2SJ347

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2SJ347

2SJ347

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ei33

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2SA1955