Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SK1548 Search Results

    2SK1548 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK1548 Collmer Semiconductor MOSFET Transistors Scan PDF
    2SK1548-01 Collmer Semiconductor MOSFET Transistors Scan PDF
    2SK1548-01 Collmer Semiconductor F-II, FAP, F-III, F-V Series Modules Scan PDF
    2SK1548-01M Fuji Electric N-CHANNEL SILICON POWER MOS-FET Original PDF
    2SK1548-01M Collmer Semiconductor FAP-II Series / FAP-IIIA Series MOSFETS Scan PDF
    2SK1548-01M Fuji Electric TRANS MOSFET N-CH 900V 3.5A 3SC-67 Scan PDF
    2SK1548-01M Fuji Electric N-CHANNEL SILICON POWER MOS-FET Scan PDF
    2SK1548-01M Unknown Scan PDF
    2SK1548-01MR Fuji Electric N-channel Silicon Power MOSFET Scan PDF

    2SK1548 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SK1548 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)900 V(BR)GSS (V) I(D) Max. (A)3.5 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)40 Minimum Operating Temp (øC)


    Original     		PDF 2SK1548

    Untitled

    Abstract: No abstract text available
    Text: 2SK1548-01M Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)900 V(BR)GSS (V)30 I(D) Max. (A)3.5 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)9.0 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)40# Minimum Operating Temp (øC)


    Original     		PDF 2SK1548-01M

    Untitled

    Abstract: No abstract text available
    Text: 2SK1548-01 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)900 V(BR)GSS (V) I(D) Max. (A)3.5 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)40 Minimum Operating Temp (øC)


    Original     		PDF 2SK1548-01

    STK411-230E

    Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


    Original     		PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    Untitled

    Abstract: No abstract text available
    Text: 2SK1548-01M SIPMOS FU JI POWER M O S-FET N-CHANNEL SILICON POWER MOS-FET FAP-II SERIES • Features IOutline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V gss = ± 30V Guarantee


    OCR Scan     		PDF 2SK1548-01M DQG30Ã 548-01M

    Untitled

    Abstract: No abstract text available
    Text: 2SK1548-01 MR FUJI P Q W E R M O S - F E T N CHANNEL SILICON POWER MOS-FET _ - F-II SERIES • Features „ I Outline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage


    OCR Scan     		PDF 2SK1548-01

    Untitled

    Abstract: No abstract text available
    Text: 2SK1548-01M S IP M O S * F U J I P O W E R M O S-FET N-CHANNEL SILICON PO W ER MOS-FET FAP-II SERIES • Features Outline Drawings • High speed switching • Low on-resistance t.0»02 • No secondary breakdown • Low driving power i-F • High voltage


    OCR Scan     		PDF 2SK1548-01M SC-67

    a2229

    Abstract: 2SK1548-01M
    Text: 2SK1548-01M S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET F A P -II S E R IE S I Features Outline Drawings ►High speed sw itching ►Low on-resistance ►No secondary breakdow n ►Low driving p ow er * High voltage ► V GSs = ± 3 0 V G uarantee


    OCR Scan     		PDF 2SK1548-01M SC-67 a2-229 000300b A2-230 a2229

    2SK1548-01M

    Abstract: 733 mos fet 2sk mosfet mosfet 2sk
    Text: 2SK1548-01M S I P M O S * F U J I P O W E R MOS-FET N-CHANNEL SILICON PO W ER MOS-FET FAP-II SERIES • Features Outline Drawings • High speed switching • Low on-resistance t.0»02 • No secondary breakdown • Low driving power i-F • High voltage • V.


    OCR Scan     		PDF 2SK1548-01M SC-67 972-733-1700-www 733 mos fet 2sk mosfet mosfet 2sk

    T0220F

    Abstract: 2sk1512 2SK1217 2SK1511 T0-220F 2SK1084 2SK1388 2MI200F-025 2sk1018 2SK1390
    Text: 22307^2 ODGISTT OTT « C O L COLLHER SEMICONDUCTOR INC MÛE » •v-m-yy MUSFETS s F-ll SERIES (toff 30% REDUCED, VGS=30V (cont’d.) Device Type 2SK1082 2SK962 2SK1217 2SK1512 2SK1511 R atings Id (A) V dss OO 900 900 900 900 1000 C h aracteristics (Tc=25°C)


    OCR Scan     		PDF 2SK1082 2SK962 2SK1217 T03PF 2SK1512 2SK1511 2SK1008-01 T0220 2SK1010-01 T0220F T0-220F 2SK1084 2SK1388 2MI200F-025 2sk1018 2SK1390

    Untitled

    Abstract: No abstract text available
    Text: MOSFETs FAP-II Series - VGS ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness 200 - 900 Volts Device Type 2SK2519-01 2SK2520-01 MR 2SK2521-01 2SK2522-01MR 2SK2469-01MR 2SK2470-01MR 2SK2471-01 2SK2473-01 2SK1006-01MR 2SK1007-01 2SK1009-01 2SK1386-01


    OCR Scan     		PDF 2SK2519-01 2SK2520-01 2SK2521-01 2SK2522-01MR 2SK2469-01MR 2SK2470-01MR 2SK2471-01 2SK2473-01 2SK1006-01MR 2SK1007-01

    2SK1171

    Abstract: 900 v 9 amp mosfet 2SK1015 2SK726 2SK1511 2SK1222 j545 2SK1018 2SK9 2SK151
    Text: COLLMER SEMI CO NDUC TO R INC 34E » . • 25307^2 Ü001SS7 1 « C O L " T '' 3>°\ - 3 IIU JM M S O E Power MOSFET Advantages: . F-l Series . F-ll Series Low RDS (on V G S + /- 30V Reduced turn off time High avalanced ruggedness VG S + /- 30V, Reduced turn


    OCR Scan     		PDF 001SS7 25-35kg 2SK1171 900 v 9 amp mosfet 2SK1015 2SK726 2SK1511 2SK1222 j545 2SK1018 2SK9 2SK151

    2SK100

    Abstract: 2SK2765 2SK2029-01LS 2sk1936 2SK1940 2sk2761 2SK196 2SK2082 2SK1082 2SK182
    Text: MOSFET QUICK REFERENCE GUIDE -30V to 450V BY PACKAGE TYPE F-l: P A G E 11 FA P-IIA : FA P-I: P A G E 11 FA P-IIS : F-ll: P A G E 11 F-lll: FA P-II: P A G E 12 SU R FA C E MOUNT FA P-III: P A G E 15 FA P-IIIA A U TO : P A G E 16 FA P-IIIB : P A G E 16 F-V:


    OCR Scan     		PDF T0-220 T0-220F15 2SJ472-01L 2SJ314-01L 2SJ473-01L 2SK2248-01L 2SK1942-01 2SK2770-01 2SK2528-01 2SK1944-01 2SK100 2SK2765 2SK2029-01LS 2sk1936 2SK1940 2sk2761 2SK196 2SK2082 2SK1082 2SK182

    Untitled

    Abstract: No abstract text available
    Text: MOSFETs FAP-II Series - VGS ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness 200 - 900 Volts Device Type 2SK2519-01 2SK2520-01MR 2SK2521-01 2SK2522-01MR 2SK2469-01MR 2SK2470-01MR 2SK2471-01 2SK2473-01 2SK1006-01 MR 2SK1007-01 *2SK1009-01 2SK1386-01


    OCR Scan     		PDF 2SK2519-01 2SK2520-01MR 2SK2521-01 2SK2522-01MR 2SK2469-01MR 2SK2470-01MR 2SK2471-01 2SK2473-01 2SK1006-01 2SK1007-01

    2SK962

    Abstract: T03P 2MI200F-025
    Text: COLLHER SEMICONDUCTOR INC 22367^2 OOGIS?^ OTT « C O L 4ÔE » MOSFETS <§ F-ll SERIES toff 30% REDUCED, VGS=30V (cont’d.) Device Type 2SK1082 2SK962 2SK1217 2SK1512 2SK1511 Ratings lo (A) Vdss(V) 900 900 900 900 1000 Characteristics (Tc=25°C) Sis(S)


    OCR Scan     		PDF 2SK1082 2SK962 2SK1217 2SK1512 2SK1511 T03PF 2SK1008-01 2SK1010-01 2SK1012-01 2SK1014-01 T03P 2MI200F-025

    ET412

    Abstract: 2SK1217 2SK2850 ESAB92M-02N 2SK2879 2SK2765 2SK2645 2SK1916 2sk2645 MOSFET 2sk1082
    Text: / Discontinued Types 9. S! Descciptien / ' f ' 7 - MOSFET Power MOFET O w c o n t& n je d ty p e ItW B S W P Â R e p la c a d typ e 2SK1009 2SK1010 2SK1011 2SK1012 2SK1015 2SK2871 2SK2875 2SK2639 2SK2641 2SK2755 2SK1016 2SK1023 2SK1024 2SK1082 2SK2643 2SK2646


    OCR Scan     		PDF 2SB1532 2SC3821 2SC3822 2SC3865 2SC3886 2SC4383 2SC4507 2SC4508 2SD1726 2SD1740 ET412 2SK1217 2SK2850 ESAB92M-02N 2SK2879 2SK2765 2SK2645 2SK1916 2sk2645 MOSFET 2sk1082

    90T03P

    Abstract: 2SK956 10002 2SK906A 2SK1082 t009 2SK1388 2SK1661 2SK900 FUJI Semiconductors
    Text: P U H STLdEOTiSDE COLLHER SEMICONDUCTOR INC 4ÔE D • 553Ô7TE GG01ÔD2 Db4 ■ COL T 3 > < V > Power MOSFET Advantages: • F-l Series Low RDS on • F-ll Series VGS +/- 30V Reduced turn off time . FAP-II Series High avalanche ruggedness VGS +/- 30V, Reduced turn


    OCR Scan     		PDF FAP-11 T03PF 2SK957-01 T0220F 2SK958-01 T0220 2SK959-01 2SK1548-01 2SK1024-01 90T03P 2SK956 10002 2SK906A 2SK1082 t009 2SK1388 2SK1661 2SK900 FUJI Semiconductors

    2SK1101-01M

    Abstract: 2SK1006-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1013-01 2SK1015-01 2SK1386-01
    Text: MOSFETs FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 250 - 900 Volts Device Type 2SK1006-01M 2SK1007-01 2SK1009-01 2SK1386-01 2SK1011-01 2SK1101-01M 2SK1013-01 2SK1015-01 2SK1916-01 2SK1017-01 2SK1008-01 2SK1010-01 2SK1820-01


    OCR Scan     		PDF 2SK1006-01M T0220F15 2SK1007-01 T0220 2SK1009-01 2SK1386-01 2SK1011-01 2SK1101-01M 2SK1013-01 2SK1015-01

    2SK1511

    Abstract: 2SK1512-01 2sk1018 2SK1221-01 2SK191 2SK1018-01 2SK1007-01 2SK1009-01 2SK1011-01 2SK1013-01
    Text: FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts Package Characteristics Max. Maximum Ratinas Device toff (PS) Coss(pfy V d s s (V) Type . Ip (AL _ Pd (W) R ds(on) Q Ciss(pf) 10220 90 210 860 80 0.40 250 W M to :


    OCR Scan     		PDF 2SK1221-01 T0220 2SK191 T0220F15 2SK1007-01 T0220 2SK1009-01 2SK1011-01 2SK1101-01M 2SK1511 2SK1512-01 2sk1018 2SK1018-01 2SK1013-01

    TO-3P Jedec package outline

    Abstract: 2sk1507 TO-220F15 K1015 TO220F15 2SK1016 2SK1015-01 2SK1916 high voltage mosfet, to-220 case 2SK956-01 equivalent
    Text: 2SK1507-01 MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET p • Features j SERIES j Outline Drawings • High speed switching • Low on-resistance • Mo secondary breakdown • Low driving power • High voltage • V GSS = ± 30V Guarantee • Avalanche-proof


    OCR Scan     		PDF 2SK1507-01 SC-67 O-220F15 2SK1081-01 2SK956-01 2SK1385-01R 2SK1548-01 2SK1024-01 O-220 TO-3P Jedec package outline 2sk1507 TO-220F15 K1015 TO220F15 2SK1016 2SK1015-01 2SK1916 high voltage mosfet, to-220 case 2SK956-01 equivalent

    Untitled

    Abstract: No abstract text available
    Text: MOSFETs FAP-II Series - VGS ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness 200 - 900 Volts D evioe _ l Y R e _ 2SK2519-01 2SK2520-01 MR 2SK2521-01 2SK2522-01MR 2S K 2469-01M R 2S K 247 0-0 1M R 2SK24tl~01 £ S K 2 4 7 3 -& t 2S K 10 o 6-o i M r


    OCR Scan     		PDF 2SK2519-01 2SK2520-01 2SK2521-01 2SK2522-01MR 2469-01M 2SK24tl 2SK1007-01 2SK1009-01 2SK1386-01 2SK2523-01

    2SK1014-01

    Abstract: 2SK151
    Text: MOSFETs FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 250 - 900 Volts Device Type 2SK1006-01M 2SK1007-01 2SK1009-01 2SK1386-01 2SK1011-01 2SK1101-01M 2SK1013-01 2SK1015-01 2SK1916-01 2SK1017-01 2SK1008-01 2SK1010-01 2SK1820-01


    OCR Scan     		PDF 2SK1006-01M 2SK1007-01 2SK1009-01 2SK1386-01 2SK1011-01 2SK1101-01M 2SK1013-01 2SK1015-01 2SK1916-01 2SK1017-01 2SK1014-01 2SK151

    2SK1221-01

    Abstract: No abstract text available
    Text: COL L HE R S E M I C O N D U C T O R INC b3E D • 5 2 3 8 7^ 2 0 0 0 1 Ô7 1 541 « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvpe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01


    OCR Scan     		PDF 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M 2SK1013-01 2SK1222-01 2SK1015-01 2SK1916-01

    2sk1507

    Abstract: TO-220F15 2SK1916-01R K1102 TO220F15 2SK1820-01L 2SK1006-01MR 2SK1007-01 2SK1009-01 2SK2469-01MR
    Text: <§ MOSFETs FAP-II Series - VGS ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness 200 - 900 Volts Device Type 2SK2519-01 2SK2520-01 MR 2SK2521-01 2SK2522-01MR 2SK2469-01MR 2SK2470-01MR 2SK2471-01 2SK2473-01 2SK1006-01MR 2SK1007-01 2SK1009-01 2SK1386-01


    OCR Scan     		PDF 2SK2519-01 O-220 2SK2520-01 O-220F15 2SK2521-01 2SK2522-01MR O-220 2SK2469-01MR 2sk1507 TO-220F15 2SK1916-01R K1102 TO220F15 2SK1820-01L 2SK1006-01MR 2SK1007-01 2SK1009-01