Untitled
Abstract: No abstract text available
Text: 2SK1382 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSIII 2SK1382 Relay Drive, Motor Drive and DC−DC Converter Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 15 mΩ (typ.) z High forward transfer admittance
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2SK1382
2-21F1B
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2SK1382
Abstract: No abstract text available
Text: 2SK1382 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSIII 2SK1382 Relay Drive, Motor Drive and DC−DC Converter Applications Unit: mm l 4 V gate drive l Low drain−source ON resistance : RDS (ON) = 15 mΩ (typ.) l High forward transfer admittance
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2SK1382
25transportation
2SK1382
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Untitled
Abstract: No abstract text available
Text: 2SK1382 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSIII 2SK1382 Relay Drive, Motor Drive and DC−DC Converter Applications Unit: mm 4 V gate drive Low drain−source ON resistance : RDS (ON) = 15 mΩ (typ.) High forward transfer admittance
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2SK1382
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2SK1381
Abstract: SC-65
Text: 2SK1381 東芝電界効果トランジスタ 2 シリコンNチャネルMOS形 L −π−MOSⅢ 2SK1381 ○ DC−DC コンバータ用 ○ モータドライブ用 単位: mm z 4V 駆動です。 z オン抵抗が低い。 : RDS (ON) = 25 mΩ (標準) z 順方向伝達アドミタンスが高い。
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2SK1381
SC-65
2-16C1B
2002/95/EC)
2SK1381
SC-65
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PDF
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2SK1389
Abstract: No abstract text available
Text: 2SK1389 N-channel MOS-FET F-III Series 60V > Features - 0,025Ω 50A 125W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier
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2SK1389
2SK1389
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Untitled
Abstract: No abstract text available
Text: 2SK1381 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L2−π−MOSIII 2SK1381 Relay Drive, Motor Drive and DC−DC Converter Applications Unit: mm z 4-V gate drive z Low drain−source ON-resistance : RDS (ON) = 25 mΩ (typ.) z High forward transfer admittance
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Original
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2SK1381
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Untitled
Abstract: No abstract text available
Text: 2SK1381 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSIII 2SK1381 Relay Drive, Motor Drive and DC−DC Converter Applications Unit: mm 4 V gate drive Low drain−source ON resistance : RDS (ON) = 25 mΩ (typ.) High forward transfer admittance
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Original
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2SK1381
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PDF
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2SK1380
Abstract: No abstract text available
Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-7r-MOSm 2SK1380 H I GH S P E E D , H I G H CURRENT SWI TCHING A P P L I C A T I O N S . INDUSTRIAL APPLICATIONS R E L A Y D R I V E , M O T O R D RI VE AND DC-DC C ONV ER T ER A P P L I C A T I O N S .
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OCR Scan
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2SK1380
2SK1380
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SK1382 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-7r-MOSIII 2 S K 1 382 HIGH SPEED SWITCHING APPLICATIONS RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER APPLICATIONS • • • • • INDUSTRIAL APPLICATIONS Unit in mm 4V Gate Drive
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OCR Scan
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2SK1382
15mil
20kil)
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PDF
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2SK1385-01
Abstract: n mosfet 1400 v
Text: 2SK1385-01 SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F A P - I I S E R I E S lOutline Drawings • Features • High speed sw itching • Lo w on-resistance • No second ary breakdow n • Lo w driving p o w er • High voltage • V GSs = ± 3 0 V G uarantee
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OCR Scan
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2SK1385-01
A2-191
n mosfet 1400 v
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PDF
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2sk1380
Abstract: No abstract text available
Text: TOSHIBA Discrete Semiconductors 2SK1380 Field Effect Transistor U n it in m m Silicon N Channel MOSType L2-tt-MOS III High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications F e a tu re s • 4-Volt Gate Drive • Low Drain-Source ON Resistance
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OCR Scan
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2SK1380
10OjiA
2sk1380
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PDF
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Untitled
Abstract: No abstract text available
Text: MOSFETs FAP-II Series - VGS ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness 200 - 900 Volts Device Type 2SK2519-01 2SK2520-01 MR 2SK2521-01 2SK2522-01MR 2SK2469-01MR 2SK2470-01MR 2SK2471-01 2SK2473-01 2SK1006-01MR 2SK1007-01 2SK1009-01 2SK1386-01
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OCR Scan
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2SK2519-01
2SK2520-01
2SK2521-01
2SK2522-01MR
2SK2469-01MR
2SK2470-01MR
2SK2471-01
2SK2473-01
2SK1006-01MR
2SK1007-01
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PDF
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a2198
Abstract: 2SK1388 A2-198
Text: 2SK1388 FUJI POWER M O S-FET N-C HANNEL SILICON POWER MOS-FET F-III SERIES •Outline Drawings ■ leatures • H gh current • Low on-resistance • N d secondary breakdown • Low driving power • H gh forward Transconductance ■Applications • Motor controllers
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OCR Scan
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2SK1388
a2198
2SK1388
A2-198
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PDF
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2SK1381
Abstract: SC-65
Text: TOSHIBA 2SK1381 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-7r-MOSIII 2 S K 1 381 HIGH SPEED SWITCHING APPLICATIONS RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 4V Gate Drive Low Drain-Source ON Resistance : RDg(ON)“ 25mO (Typ.)
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OCR Scan
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2SK1381
-25mO
2SK1381
SC-65
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PDF
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Untitled
Abstract: No abstract text available
Text: MOSFETs FAP-II Series - VGS ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness 200 - 900 Volts Device Type 2SK2519-01 2SK2520-01MR 2SK2521-01 2SK2522-01MR 2SK2469-01MR 2SK2470-01MR 2SK2471-01 2SK2473-01 2SK1006-01 MR 2SK1007-01 *2SK1009-01 2SK1386-01
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OCR Scan
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2SK2519-01
2SK2520-01MR
2SK2521-01
2SK2522-01MR
2SK2469-01MR
2SK2470-01MR
2SK2471-01
2SK2473-01
2SK1006-01
2SK1007-01
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PDF
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2SK2079-01M
Abstract: 2SK2079 2SK2001-01M 2SK1549 2SK900 2SK901 2SK902 2SK905 2SK906 2SK947M
Text: MOSFETs F-l Series Low RdS ON 50 - 900 Volts Device Type 2SK905 2SK906 2SK900 2SK947M 2SK901 2SK1549 2SK902 2SK949M 2SK950 2SK724 2SK725 2SK899 2SK897M 2SK903M 2SK904 2SK1105 2SK1663 2SK1384 2SK955 2SK960M 2SK961 Miiximum Ratin as I d (A) V d s s (V ) 45
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OCR Scan
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2SK905
2SK906
2SK900
T0220
2SK947M
T0220F15
2SK901
2SK1549
T03PF
2SK902
2SK2079-01M
2SK2079
2SK2001-01M
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PDF
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2SK1083MR
Abstract: 2SK1086MR 2SK1096MR 2SK1387MR 2SK1388 2SK1505MR 2SK1881L 2SK2048L 2sk1506
Text: MOSFETs F-lll Series - Logic Level Operation, Low R d s o n 3 0 - 1 5 0 Volts Device Type Maximum Ratinas V dss (V) Pd (W) Id (A ) 2SK1505MR 2SK2048L.S 2SK1388 2SK1083MR 2SK1096MR 2SK1086MR 2SK1881L.S 2SK1387MR 2SK1089 2SK1508 2SK1389 2SK1390R 2SK2049
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OCR Scan
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2SK1505MR
T0220F15
2SK2048L
2SK1388
T0-220
2SK1083MR
T0-220F15
2SK1096MR
2SK1086MR
2SK1387MR
2SK1881L
2sk1506
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PDF
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2SK1380
Abstract: 6 volt ldr
Text: TOSHIBA 2SK1380 Field Effect Transistor Silicon N Channel MOS Type L2-tc-MOS III High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications F e a tu re s • 4-Volt Gate Drive • Low Drain-Source ON Resistance “ r D S (O N ) = 6 - 5 0 ( T y p . )
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OCR Scan
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2SK1380
--60V
2SK1380
6 volt ldr
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SK1381 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-7r-MOSIII 2 S K 1 381 HIGH SPEED SWITCHING APPLICATIONS RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER APPLICATIONS • • • • • INDUSTRIAL APPLICATIONS Unit in mm 4V Gate Drive
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OCR Scan
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2SK1381
25mil
20kil)
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PDF
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a2188
Abstract: A2187 s451 diode 2SK1384 A2186 0003G43
Text: 2SK1384 S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL ENHANCEMENT TYPE MOS-FET F - I S E R I E S lOutline Drawings • Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage ■ A p plicatio ns
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OCR Scan
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2SK1384
A2-187
0003G43
A2-188
a2188
A2187
s451 diode
2SK1384
A2186
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PDF
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transconductance mosfet
Abstract: TFMt SC-65 3AA3
Text: 2SK1386-01 FUJI PO W ER M O S-FET N-CHANNEL SILICON POWER MOS-FET F - I I S E R I E S lOutline Drawings • Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • Vyss = ± 3 0 V Guarantee
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OCR Scan
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SK1386-01
SC-65
transconductance mosfet
TFMt
SC-65
3AA3
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PDF
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A2203
Abstract: A-2203 2SK1389 H150 SC-65
Text: 2SK1389 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F - III S E R I E S lOutline Drawings • Features • High current • Low on-resistance • No secondary breakdown • Low driving power • High forward Transconductance ■Applications • Motor controllers
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OCR Scan
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2SK1389
SC-65
A2203
A-2203
2SK1389
H150
SC-65
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SK1385-01R FUJI POWER M OS-FET N-CHANNEL SILICON POWER MOS-FET F - I I S E R I E S lOutline Drawings • Features ¡•Hicjh speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V CSS = ± 3 0 V Guarantee
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OCR Scan
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2SK1385-01R
04iSiKf9
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PDF
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2SK2079
Abstract: 2SK2079-01M
Text: S MOSFETs F-l Series Low Rds (ON 50 - 900 Volts Device Type 2SK905 2SK906 2SK900 2SK947M 2SK901 2SK1549 2SK902 2SK949M 2SK950 2SK724 2SK725 2SK899 2SK897M 2SK903M 2SK904 2SK1105 2SK1663 2SK1384 2SK955 2SK960M 2SK961 Maximum Ratinas Id (A) V dss (V) Pd (W)
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OCR Scan
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2SK905
2SK906
2SK900
2SK947M
2SK901
2SK1549
2SK902
2SK949M
2SK950
2SK724
2SK2079
2SK2079-01M
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PDF
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