2SK1302
Abstract: V1660 Hitachi DSA00398
Text: 2SK1302 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive
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Original
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2SK1302
O-220AB
2SK1302
V1660
Hitachi DSA00398
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PDF
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2SK1302
Abstract: Hitachi DSA002713
Text: 2SK1302 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive
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Original
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2SK1302
O-220AB
2SK1302
Hitachi DSA002713
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PDF
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2SK1302
Abstract: Hitachi DSA002780
Text: 2SK1302 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive
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Original
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2SK1302
O-220AB
D-85622
2SK1302
Hitachi DSA002780
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SK1302 Silicon N-Channel MOS FET Application TO–220AB High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive
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Original
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2SK1302
220AB
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PDF
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V1660
Abstract: 2SK1302
Text: 2SK1302 Silicon N-Channel MOS FET Application TO–220AB High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive
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Original
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2SK1302
220AB
V1660
2SK1302
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PDF
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2SK1302
Abstract: DSA003638
Text: 2SK1302 Silicon N-Channel MOS FET ADE-208-1260 Z 1st. Edition Mar. 2001 Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive
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Original
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2SK1302
ADE-208-1260
O-220AB
2SK1302
DSA003638
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PDF
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V1660
Abstract: 2SK1302 2SK1302-E PRSS0004AC-A
Text: 2SK1302 Silicon N Channel MOS FET REJ03G0921-0200 Previous: ADE-208-1260 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive
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Original
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2SK1302
REJ03G0921-0200
ADE-208-1260)
PRSS0004AC-A
O-220AB)
V1660
2SK1302
2SK1302-E
PRSS0004AC-A
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PDF
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2SK1307
Abstract: 2SK1302
Text: 2SK1307 Silicon N-Channel MOS FET Application TO–220FM High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive
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Original
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2SK1307
220FM
2SK1307
2SK1302
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PDF
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ADE-208-1205
Abstract: Hitachi motor driver SP-10 2SK1302 2SK1307 4AK21 DSA003638
Text: 4AK21 Silicon N-Channel Power MOS FET Array ADE-208-1205 Z 1st. Edition Mar. 2001 Application High speed power switching Features • Low on-resistance R DS(on) 0.09 , VGS = 10 V, I D = 4 A R DS(on) 0.12 , VGS = 4 V, I D = 4 A • Capable of 4 V gate drive
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Original
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4AK21
ADE-208-1205
2SK1302,
2SK1307
SP-10
ADE-208-1205
Hitachi motor driver
SP-10
2SK1302
2SK1307
4AK21
DSA003638
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PDF
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2SK1302
Abstract: 2SK1623 Hitachi DSA00347
Text: 2SK1623 L , 2SK1623(S) Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive
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Original
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2SK1623
2SK1302
Hitachi DSA00347
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PDF
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Hitachi DSA002787
Abstract: No abstract text available
Text: 4AK21 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance RDS on ≤ 0.09 Ω, VGS = 10 V, ID = 4 A RDS(on) ≤ 0.12 Ω, VGS = 4 V, ID = 4 A • • • • • • Capable of 4 V gate drive Low drive current
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Original
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4AK21
2SK1302,
2SK1307
Hitachi DSA002787
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PDF
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K1302
Abstract: No abstract text available
Text: 2SK1302 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive
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OCR Scan
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2SK1302
K1302
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PDF
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2SK1778
Abstract: 27.145 2SK1296 2SJ172 2SJ173 2SJ174 2SJ247 2SK1300 2SK1301 2SK1302
Text: HITACHI 9 Table 6 : DIII-L Series Typical Characteristics Cont'd Electrical Characteristics typ. Absolute Maximum Ratings Package TO-220AB TO-220FM T0-3P T0-3P-FM Type Number 2SJ172 2SJ173 2SJ174 2SK970 2SK971 2SK972 2SK1296 2SK1300 2SK1301 2SK1302 2SJ247
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OCR Scan
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2SJ172
2SJ173
2SJ174
2SK970
2SK971
2SK972
2SK1296
2SK1300
2SK13003
2SK1665
2SK1778
27.145
2SK1296
2SJ172
2SJ174
2SJ247
2SK1300
2SK1301
2SK1302
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PDF
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Untitled
Abstract: No abstract text available
Text: l- V i jj M * f ll # /t 7 - M 0 S FETX'T y ^ POWER MOS FET SWITCHES WITH I-V CONVERTER “D# Part No. CDS2 * -j □ v y ^ B ftN c h /'C 7 -M O S FET 2SK1302*gM3 £2iSlF*3j& S I L UT U ju n k s c : ( ¿ m M H s n t t * t ' fiffl i t 7 i t - M J-T ? J H 001M ? ^ J i i ± ( - 4 ( r c ~ + 8 5 l C ) 0 > * t i * i J £ n r i ! i
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OCR Scan
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2SK1302
575max)
197max)
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PDF
|
|
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Untitled
Abstract: No abstract text available
Text: 2SK1623 L , 2SK1623(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive
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OCR Scan
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2SK1623
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PDF
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2SJ235
Abstract: 2sk1299 2SK1878 2SJ299 2sj2 high voltage p channel mosfet 2SJ214 2sk mosfet 2SK1151 2SK1152 2SK1153
Text: HITACHI 31 Power MOSFET for Switching Power Supply I _ i/ass«nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be isolated from each other. -tow
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OCR Scan
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0-30W
0-50W
0-100W
00-200W
2SK579
2SK580
2SK1151
2SK1152
2SK1153
2SK1154
2SJ235
2sk1299
2SK1878
2SJ299
2sj2 high voltage p channel mosfet
2SJ214
2sk mosfet
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PDF
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2SK1275
Abstract: 4AM14 6am12 2SK970 2SK971 2SK972 2SK973 2SK975 4AK15 4AK16
Text: 14 HITACHI 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching
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OCR Scan
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10-pin
12-pin
4AK17
2SK972
4AK15
2SK971
2SK1202
2SK1203
2SK1204
2SK696
2SK1275
4AM14
6am12
2SK970
2SK971
2SK972
2SK973
2SK975
4AK16
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PDF
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2SK1326
Abstract: 2sk1321 2SK1323 1A 30V MOS 2SK1325 2SK1327 K1308 2SK1319 2SK1311 2SK1301
Text: - 96 - € tt ffl £ j£ m "Æ i f m 1 m \> m, P d/P c h m K fe V* V) * ft * (V) * (A) * (w> Ig s s (max) (A) Vg s (V) % W (Ta=25°C) tï ft (min) (max) V d s (V) (V) (V) (min) (max) V d s (A) (A) (V) gm (min) (typ) V d s (S) (S) (V) Id (A) Id (A) 2SK1301
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OCR Scan
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2SK1301
2SK1302
2SK1303
2SK1304
2SK1305
DSS323S
75nstyp
267/S:
2SK1324,
1324S
2SK1326
2sk1321
2SK1323
1A 30V MOS
2SK1325
2SK1327
K1308
2SK1319
2SK1311
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PDF
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2sk1299
Abstract: 2SK513 2SK1202 2SK1231 2SK1665 2SK684 2SK740 2SK1151 2SK1152 2SK1153
Text: HITACHI 31 Power MOSFET for Switching Power Supply I _ Commendation products Input i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be
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OCR Scan
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0-30W
0-50W
0-100W
00-200W
2SK579
2SK580
2SK1151
2SK1152
2SK1153
2SK1154
2sk1299
2SK513
2SK1202
2SK1231
2SK1665
2SK684
2SK740
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PDF
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ac Inverter schematics 10 kw
Abstract: 200v dc motor igbt MBN300A6 UPS schematics inverter circuit schematics 2SJ279 2SK1762 ac Inverter 10 kw GN12015C GN12030E
Text: HITACHI 2.2 Product Matrix : Discretes Modules 19 The full Hitachi IGBT line up is carefully designed to meet a wide range of user needs. There are future plans for a further expansion of this line up. Table 15 : Total IGBT Product Range Ratings DISCRETES
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OCR Scan
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GN4530C
GN6010A
GN6015A
GN6020C
GN6030C
GN6050E
GN6075E
GN9060E
GN12015C
GN12030E
ac Inverter schematics 10 kw
200v dc motor igbt
MBN300A6
UPS schematics
inverter circuit schematics
2SJ279
2SK1762
ac Inverter 10 kw
GN12015C
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PDF
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2SK1778
Abstract: 2SK109 2SJ236 2SK1919 2SJ175 2SJ176 2SJ182 2SJ237 2SK1093 2SK1094
Text: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.
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OCR Scan
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high-sp03
2SK1665
2SJ215
2SJ217
2SK1303
2SK1304
2SK1298
2SK1666
2SJ216
2SJ218
2SK1778
2SK109
2SJ236
2SK1919
2SJ175
2SJ176
2SJ182
2SJ237
2SK1093
2SK1094
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PDF
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2SK44
Abstract: 2SJ182 2SJ214 2SK513 2SK1151 2SK1152 2SK1153 2SK579 2SK580 2SJ235
Text: 31 HITACHI Power MOSFET for Switching Power Supply I _ Commendation products Input i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be
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OCR Scan
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0-30W
0-50W
0-100W
00-200W
2SK579
2SK580
2SK1151
2SK1152
2SK1153
2SK1154
2SK44
2SJ182
2SJ214
2SK513
2SJ235
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PDF
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2SK1778
Abstract: 2SJ177 2SJ295 KWSA103 PF0030 PF0040 PF0042
Text: HITACHI 29 5.4 Communications Mobile RF SAW Filters KTACS KAMT« N M T/G SM Tb Bx Tu ft * T» 9m , hvm U m Typ IC - 4ädB Wide band aaaaMtkw •OStfBqrp SMD pàg - 4.5 s 5 J s 2mm 505L fan p riiw HWSAHB HWSB102 HWSAXB H W SBXa H W SA 03 H W SM » O m« Q m
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OCR Scan
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303L/3Â
KWSA103
HWSA10I
HWSB10I
HWSA01
PF0030
PP0031
PF0040
PP004I
2SK1778
2SJ177
2SJ295
PF0042
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PDF
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2SK1778
Abstract: 2sk1299 4AM12 transistor 2sk1304 2sj177 4AK22 2SK1919 2SK971 transistor 2sk 2SK972
Text: HITACHI 14 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching
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OCR Scan
|
10-pin
12-pin
4AK17
2SK972
4AK15
2SK971
2SK1665
2SJ215
2SJ217
2SK1303
2SK1778
2sk1299
4AM12
transistor 2sk1304
2sj177
4AK22
2SK1919
2SK971
transistor 2sk
2SK972
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PDF
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