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    Fastener Technology Corp FT1182SK-10-11C

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    Fuji Electric Co Ltd 2SK1016-01

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    Quest Components 2SK1016-01 3,483
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    Samtec Inc RF316-04BJ3-02SK1-0150

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    2SK101 Datasheets (77)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK1010 Collmer Semiconductor MOSFET Transistors Scan PDF
    2SK1010 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK1010 Unknown FET Data Book Scan PDF
    2SK1010-01 Collmer Semiconductor MOSFET Transistors Scan PDF
    2SK1010-01 Collmer Semiconductor F-II, FAP, F-III, F-V Series Modules Scan PDF
    2SK1010-01 Collmer Semiconductor FAP-II Series / FAP-IIIA Series MOSFETS Scan PDF
    2SK1010-01 Unknown Scan PDF
    2SK1011 Collmer Semiconductor MOSFET Transistors Scan PDF
    2SK1011 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK1011 Unknown Scan PDF
    2SK1011 Unknown FET Data Book Scan PDF
    2SK1011-01 Collmer Semiconductor FAP-II Series / FAP-IIIA Series MOSFETS Scan PDF
    2SK1011-01 Fuji Electric N-Channel Silicon Power MOSFET Scan PDF
    2SK1012 Collmer Semiconductor MOSFET Transistors Scan PDF
    2SK1012 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK1012 Unknown FET Data Book Scan PDF
    2SK1012-01 Collmer Semiconductor MOSFET Transistors Scan PDF
    2SK1012-01 Collmer Semiconductor F-II, FAP, F-III, F-V Series Modules Scan PDF
    2SK1012-01 Collmer Semiconductor FAP-II Series / FAP-IIIA Series MOSFETS Scan PDF
    2SK1012-01 Fuji Electric N-channel Silicon Power MOSFET Scan PDF

    2SK101 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK1017

    Abstract: No abstract text available
    Text: 2SK1017 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- II SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High voltage VGSS=±30V Guarantee TO-3P Applications Switching regulators UPS DC-DC converters


    Original     		PDF 2SK1017 SC-65 2SK1017

    Untitled

    Abstract: No abstract text available
    Text: 2SK1017-01 N-channel MOS-FET F-II Series 450V > Features - 0,35Ω 20A 150W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    Original     		PDF 2SK1017-01

    Untitled

    Abstract: No abstract text available
    Text: 2SK1018 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V) I(D) Max. (A)18 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC)


    Original     		PDF 2SK1018

    Untitled

    Abstract: No abstract text available
    Text: 2SK1013-01 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)450 V(BR)GSS (V)30 I(D) Max. (A)13 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)39 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125# Minimum Operating Temp (øC)


    Original     		PDF 2SK1013-01

    Untitled

    Abstract: No abstract text available
    Text: 2SK1013 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)450 V(BR)GSS (V)30 I(D) Max. (A)13 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)39 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125# Minimum Operating Temp (øC)


    Original     		PDF 2SK1013

    TCH-80

    Abstract: CTU100 2SK1019
    Text: 2SK1019 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- II SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High voltage VGSS=±30V Guarantee TO-3PL ø3.2 ±0.2 5 ±0.3 3 ±0.2 2 ±0.2 1.1 ±0.2 Applications


    Original     		PDF 2SK1019 TCH-80 CTU100 2SK1019

    2SK1017

    Abstract: SC-65
    Text: 2SK1017 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- II SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High voltage VGSS=±30V Guarantee TO-3P Applications Switching regulators UPS DC-DC converters


    Original     		PDF 2SK1017 SC-65 2SK1017 SC-65

    2sk129

    Abstract: 2sk150 datasheet 2SK101 2SK107 data sheet 2SK105 Datasheet 2sk122 2SK109 2sk146 datasheet 2SK182E 2SK131
    Text: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch min (V) 2SK101 2SK102 2SK103 2SK104 2SK105 2SK106 2SK107 2SK108 2SK109 2SK109A 2SK110 2SK111 2SK112 2SK113 2SK117 2SK118 2SK119


    Original     		PDF 2SK101 2SK102 2SK103 2SK104 2SK105 2SK106 2SK107 2SK108 2SK109 2SK109A 2sk129 2sk150 datasheet 2SK101 2SK107 data sheet 2SK105 Datasheet 2sk122 2SK109 2sk146 datasheet 2SK182E 2SK131

    2SK1014

    Abstract: No abstract text available
    Text: 2SK1014-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- II SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High voltage VGSS=±30V Guarantee TO-3P Applications Switching regulators UPS DC-DC converters


    Original     		PDF 2SK1014-01 SC-65 2SK1014

    2SK1012

    Abstract: No abstract text available
    Text: 2SK1012 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)30 I(D) Max. (A)10 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)35 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)100# Minimum Operating Temp (øC)


    Original     		PDF 2SK1012

    Untitled

    Abstract: No abstract text available
    Text: 2SK1017-01 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)450 V(BR)GSS (V)30 I(D) Max. (A)20 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)55 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150# Minimum Operating Temp (øC)


    Original     		PDF 2SK1017-01

    2SK1011

    Abstract: 2SK1007-01 2SK1009-01 2SK1011-01 2SK1013-01 2SK1101-01M 2SK1221-01 2SK1222-01 2SK1917-01M 2sk1211
    Text: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M


    OCR Scan     		PDF 2SK1221-01 T0220 2SK1917-01M T0220F15 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M 2SK1011 2SK1013-01 2SK1222-01 2sk1211

    wt1e

    Abstract: 2SK 93
    Text: 2SK1013-01 FUJI POWER M O S-FET N-CHANNEL SILICON POWER MOS-FET F-II SERIES • Outline Drawings ■ Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V USS = ± 3 0 V Guarantee • Avalanche-proof


    OCR Scan     		PDF 2SK1013-01 wt1e 2SK 93

    2sk1507

    Abstract: 2SK1011-01 2SK1018-01 2sk1018 2SK1820-01 2SK956 2SK1007-01 2SK1009-01 2SK1013-01 2SK1101-01M
    Text: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M


    OCR Scan     		PDF 2SK1221-01 T0220 2SK1917-01M T0220F15 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M 2sk1507 2SK1018-01 2sk1018 2SK1820-01 2SK956 2SK1013-01

    2SK1011

    Abstract: mosfet 2sk 2sk mosfet 2SK series
    Text: 2SK1011-01 FUJI PO W ER M O S-F E T N-CHANNEL SILICON POWER MOS-FET F -II SERIES lOutline Drawings • Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V Gss = ± 30V Guarantee • Avalanche-proof


    OCR Scan     		PDF 2SK1011 sc-65 Tc-25Â eats30 mosfet 2sk 2sk mosfet 2SK series

    2SK1012

    Abstract: 2SK1015 2SK1018-01 2SK1082 2SK1211 2SK1545 2sk1018 2SK1081-01 2SK1102 2SK1917-01M
    Text: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M


    OCR Scan     		PDF 2SK1221-01 T0220 2SK1917-01M T0220F15 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M 2SK1012 2SK1015 2SK1018-01 2SK1082 2SK1211 2SK1545 2sk1018 2SK1081-01 2SK1102

    diode Sr

    Abstract: 2SK1017-01 1D-10A
    Text: FUJI 2SK1017-01 F-ll Series eujMsirLtìUE N-channel MOS-FET 450V 0,35Q 20A 150W > Features > Outline Drawing - H ig h S p e e d Sw itching - L o w O n -R e s is ta n c e - N o S e c o n d a ry B rea k d o w n - L o w D riving P o w e r - H ig h V o lta g e


    OCR Scan     		PDF 2SK1017-01 diode Sr 1D-10A

    2SK1015-01

    Abstract: mosfet 2sk
    Text: 2SK1015-01 FUJI POWER M O S-FET N-CHANNEL SILICON POWER MOS-FET F - II S E R I E S lOutline Drawings • Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V r,ss = ± 30V Guarantee


    OCR Scan     		PDF 2SK1015-01 2SK1015-01 mosfet 2sk

    Untitled

    Abstract: No abstract text available
    Text: <s MOSFETs FAP-II Series V G S ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 250 - 900 Volts Device Type 2 S K 1 006-01M 2 S K 1 007-01 2 SK 1 009-01 2 S K 1 386-01 2 S K 1 0 1 1-01 2SK1101-01M 2SK1013-01 2SK1015-01 2SK1916-01 2SK1017-01 2 SK 1 008-01


    OCR Scan     		PDF 2SK1006-01M 2SK1007-01 2SK1009-01 2SK1386-01 2SK1011-01 2SK1101-01M 2SK1013-01 2SK1015-01 2SK1916-01 2SK1017-01

    Untitled

    Abstract: No abstract text available
    Text: 2SK1017-01 SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-II SERIES lOutline Drawings • Features • High speed sw itching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V gss = ± 3 0 V Guarantee


    OCR Scan     		PDF 2SK1017-01 SC-65

    2SK1019

    Abstract: mosfet 2sk
    Text: 2SK1019 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET p • Features R|ES j j lOutline Drawings • High speed switching • Lew on-resistance • No secondary breakdown • Lew driving power • High voltage • V c s s ~ ± 3 0 V Guarantee ■Applications


    OCR Scan     		PDF 2SK1019 Tc-25Â 2SK1019 mosfet 2sk

    ET412

    Abstract: 2SK1217 2SK2850 ESAB92M-02N 2SK2879 2SK2765 2SK2645 2SK1916 2sk2645 MOSFET 2sk1082
    Text: / Discontinued Types 9. S! Descciptien / ' f ' 7 - MOSFET Power MOFET O w c o n t& n je d ty p e ItW B S W P Â R e p la c a d typ e 2SK1009 2SK1010 2SK1011 2SK1012 2SK1015 2SK2871 2SK2875 2SK2639 2SK2641 2SK2755 2SK1016 2SK1023 2SK1024 2SK1082 2SK2643 2SK2646


    OCR Scan     		PDF 2SB1532 2SC3821 2SC3822 2SC3865 2SC3886 2SC4383 2SC4507 2SC4508 2SD1726 2SD1740 ET412 2SK1217 2SK2850 ESAB92M-02N 2SK2879 2SK2765 2SK2645 2SK1916 2sk2645 MOSFET 2sk1082

    2SK1101-01M

    Abstract: 2SK1006-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1013-01 2SK1015-01 2SK1386-01
    Text: MOSFETs FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 250 - 900 Volts Device Type 2SK1006-01M 2SK1007-01 2SK1009-01 2SK1386-01 2SK1011-01 2SK1101-01M 2SK1013-01 2SK1015-01 2SK1916-01 2SK1017-01 2SK1008-01 2SK1010-01 2SK1820-01


    OCR Scan     		PDF 2SK1006-01M T0220F15 2SK1007-01 T0220 2SK1009-01 2SK1386-01 2SK1011-01 2SK1101-01M 2SK1013-01 2SK1015-01

    H1h fet

    Abstract: TEA 1019 2SK1019 2sk 30A MOSFET Diode LT 450
    Text: 2SK1019 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET p • Features R|ES j j lOutline Drawings • High speed switching • Lew on-resistance • No secondary breakdown • Lew driving power • High voltage • V c s s ~ ± 3 0 V Guarantee ■Applications


    OCR Scan     		PDF 2SK1019 Tc-25Â H1h fet TEA 1019 2SK1019 2sk 30A MOSFET Diode LT 450