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    2SJ62 Search Results

    2SJ62 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SJ621-T1B-AT Renesas Electronics Corporation Pch Single Power Mosfet -12V -3.5A 44Mohm Tmm/Sc-96 Visit Renesas Electronics Corporation
    2SJ626-T1B-A Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    2SJ621-T1B-A Renesas Electronics Corporation Pch Single Power Mosfet -12V -3.5A 44Mohm Tmm/Sc-96 Visit Renesas Electronics Corporation
    2SJ626-T1B-AT Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    2SJ626(0)-T1B-A Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
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    2SJ62 Price and Stock

    TE Connectivity ROX2SJ62K

    RES 62K OHM 5% 2W AXIAL
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    DigiKey ROX2SJ62K Cut Tape 13,073 1
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    ROX2SJ62K Ammo Pack 11,000 1,000
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    Avnet Americas ROX2SJ62K Bulk 12,000
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    Panasonic Electronic Components ERG-2SJ623A

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    DigiKey ERG-2SJ623A Reel 3,000 3,000
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    Panasonic Electronic Components ERG-2SJ620

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    DigiKey ERG-2SJ620 Bulk 26 1
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    Bristol Electronics ERG-2SJ620 2,200
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    Master Electronics ERG-2SJ620 5,000
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    Panasonic Electronic Components ERG-2SJ623

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    New Advantage Corporation ERG-2SJ623 47,000 1
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    Panasonic Electronic Components ERG-2SJ621

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    2SJ62 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SJ620 Toshiba TRANS MOSFET P-CH 100V 18A 4(2-9F1B) Original PDF
    2SJ620 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SJ620 Toshiba P-Channel MOSFET Original PDF
    2SJ621 NEC Pch enhancement type MOS FET Original PDF
    2SJ621-T1B NEC Pch enhancement type MOS FET Original PDF
    2SJ621-T2B NEC Pch enhancement type MOS FET Original PDF
    2SJ624 NEC Pch enhancement type MOS FET Original PDF
    2SJ624-T1B NEC Pch enhancement type MOS FET Original PDF
    2SJ624-T1B-AT Renesas Electronics MOSFET P-CH 20V SC-96 SOT-23 Original PDF
    2SJ624-T2B NEC Pch enhancement type MOS FET Original PDF
    2SJ625 NEC Pch enhancement type MOS FET Original PDF
    2SJ625-T1B NEC Pch enhancement type MOS FET Original PDF
    2SJ625-T2B NEC Pch enhancement type MOS FET Original PDF
    2SJ626 NEC Pch enhancement type MOS FET Original PDF
    2SJ626-T1B NEC Pch enhancement type MOS FET Original PDF
    2SJ626-T2B NEC Pch enhancement type MOS FET Original PDF
    2SJ628 Sanyo Semiconductor Medium Output MOSFETs Original PDF
    2SJ629 Sanyo Semiconductor General-Purpose Switching Device Applications Original PDF

    2SJ62 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SJ620

    Abstract: No abstract text available
    Text: 2SJ620 東芝電界効果トランジスタ シリコンPチャネルMOS形 L2−π−MOSV 2SJ620 ○ スイッチングレギュレータ､DC-DC コンバータ用 ○ モータドライブ用 • 4 V 駆動です。 • オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 15 S (標準)


    Original     		2SJ620 2SJ620 PDF

    2SJ628

    Abstract: No abstract text available
    Text: 2SJ628 Ordering number : EN7271A P-Channel Silicon MOSFET 2SJ628 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage


    Original     		2SJ628 EN7271A PW10s, 250mm20 2SJ628 PDF

    2SJ620

    Abstract: No abstract text available
    Text: 2SJ620 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2-π-MOSV 2SJ620 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Unit: mm 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 63 mΩ (typ.) •


    Original     		2SJ620 2SJ620 PDF

    2SJ626

    Abstract: 5M15A nec 556
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ626 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION +0.1 0.65–0.15 0.16+0.1 –0.06 • 4.0 V drive available • Low on-state resistance RDS(on)1 = 388 mΩ MAX. (VGS = –10 V, ID = –1.0 A)


    Original     		2SJ626 2SJ626 5M15A nec 556 PDF

    D1563

    Abstract: xg transistor
    Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SJ621 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm +0.1 0.65–0.15 0.16+0.1 –0.06 • Can be driven by a 1.8 V power source • Low on-state resistance


    Original     		2SJ621 2SJ621 D1563 xg transistor PDF

    marking XN

    Abstract: nec 556
    Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SJ626 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION +0.1 0.65–0.15 0.16+0.1 –0.06 • 4.0 V drive available • Low on-state resistance RDS(on)1 = 388 mΩ MAX. (VGS = –10 V, ID = –1.0 A)


    Original     		2SJ626 2SJ626 marking XN nec 556 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SJ620 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2-π-MOSV 2SJ620 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 63 mΩ (typ.) • High forward transfer admittance: |Yfs| = 15 S (typ.)


    Original     		2SJ620 to150 PDF

    IT10074

    Abstract: 2SJ629
    Text: 2SJ629 注文コード No. N 9 0 8 4 A 三洋半導体データシート 半導体ニューズ No.N9084 をさしかえてください。 2SJ629 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。


    Original     		2SJ629 N9084 600mm2 IT10073 IT10076 IT10077 IT10072 IT10074 2SJ629 PDF

    2SJ620

    Abstract: No abstract text available
    Text: 2SJ620 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2-π-MOSV 2SJ620 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 63 mΩ (typ.) • High forward transfer admittance: |Yfs| = 15 S (typ.)


    Original     		2SJ620 2SJ620 PDF

    82605

    Abstract: 2SJ629
    Text: 2SJ629 Ordering number : EN9084A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 2SJ629 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C


    Original     		2SJ629 EN9084A 600mm2 82605 2SJ629 PDF

    D1563

    Abstract: 2SJ621
    Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor 2SJ621 P チャネル パワーMOS FET スイッチング用 外形図（単位: mm） 2SJ621 は，1.8 V 電源系による直接駆動が可能なスイッチング素子


    Original     		2SJ621 2SJ621 SC-96 D15634JJ1V0DS D1563 PDF

    d1589

    Abstract: 2SJ624 A65108
    Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor 2SJ624 P チャネル MOS FET スイッチング用 外形図（単位：mm） 2SJ624 は，1.8 V 電源系による直接駆動が可能なス イッチング素子です。


    Original     		2SJ624 2SJ624 SC-96 D15890JJ1V0DS d1589 A65108 PDF

    2SJ625

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ625 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm FEATURES 0.4 +0.1 –0.05 +0.1 0.65–0.15 3 0 to 0.1 1 • 1.8 V drive available • Low on-state resistance RDS(on)1 = 113 mΩ MAX. (VGS = –4.5 V, ID = –1.5 A)


    Original     		2SJ625 2SJ625 PDF

    2SJ628

    Abstract: No abstract text available
    Text: 2SJ628 注文コード No. N 7 2 7 1 A 三洋半導体データシート 半導体データシート No.N7271 をさしかえてください。 2SJ628 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長


    Original     		2SJ628 N7271 250mm2 IT04775 IT04771 250mm2 IT04778 2SJ628 PDF

    J620 control system

    Abstract: 2SJ620
    Text: 2SJ620 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2-π-MOSV 2SJ620 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 63 mΩ (typ.) • High forward transfer admittance: |Yfs| = 15 S (typ.)


    Original     		2SJ620 J620 control system 2SJ620 PDF

    S5030

    Abstract: No abstract text available
    Text: 2SJ620 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2-π-MOSV 2SJ620 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Unit: mm 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 63 mΩ (typ.) •


    Original     		2SJ620 to150 S5030 PDF

    nec k 813

    Abstract: D1589 marking XH
    Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SJ624 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION +0.1 0.65–0.15 0.16+0.1 –0.06 • 1.8 V drive available • Low on-state resistance RDS(on)1 = 54 mΩ MAX. (VGS = –4.5 V, ID = –2.5 A)


    Original     		2SJ624 2SJ624 nec k 813 D1589 marking XH PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SJ629 Ordering number : EN9084 P-Channel Silicon MOSFET 2SJ629 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol


    Original     		EN9084 2SJ629 250mm2 PDF

    2SJ628

    Abstract: No abstract text available
    Text: Ordering number : ENN7271 2SJ628 P-Channel Silicon MOSFET 2SJ628 Ultrahigh-Speed Switching Applications Preliminary Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. unit : mm 2062A [2SJ628] 4.5 1.6 0.4 1.0 2.5


    Original     		ENN7271 2SJ628 2SJ628] 25max 2SJ628 PDF

    2SJ620

    Abstract: No abstract text available
    Text: 2SJ620 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2-π-MOSV 2SJ620 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • 4-V gate drive • Low drain-source ON-resistance: RDS (ON) = 63 mΩ (typ.) • High forward transfer admittance: |Yfs| = 15 S (typ.)


    Original     		2SJ620 2SJ620 PDF

    2SJ620

    Abstract: No abstract text available
    Text: 2SJ620 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2-π-MOSV 2SJ620 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 63 mΩ (typ.) • High forward transfer admittance: |Yfs| = 15 S (typ.)


    Original     		2SJ620 2SJ620 PDF

    D1589

    Abstract: nec k 813 2SJ624 marking xh
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ624 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm +0.1 0.65–0.15 0.16 +0.1 –0.06 3 1.5 FEATURES 0.4 +0.1 –0.05 2.8 ±0.2 The 2SJ624 is a switching device which can be driven directly


    Original     		2SJ624 2SJ624 D1589 nec k 813 marking xh PDF

    D1563

    Abstract: 2SJ621 marking ls nec marking xg
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ621 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION The 2SJ621 is a switching device which can be driven directly by a 1.8 V power source. This device features a low on-state resistance and excellent


    Original     		2SJ621 2SJ621 D1563 marking ls nec marking xg PDF

    2SJ620

    Abstract: No abstract text available
    Text: 2SJ620 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2-π-MOSV 2SJ620 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Unit: mm 4-V gate drive · Low drain-source ON resistance: RDS (ON) = 63 mΩ (typ.) · High forward transfer admittance: |Yfs| = 15 S (typ.)


    Original     		2SJ620 2SJ620 PDF