Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SJ61 Search Results

    SF Impression Pixel

    2SJ61 Price and Stock

    Rochester Electronics LLC 2SJ615-TD-E

    PCH 4V DRIVE SERIES
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SJ615-TD-E Bulk 1,402
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.21
    		Buy Now

    Rochester Electronics LLC 2SJ616-TD-E

    2SJ616 - P CHANNEL MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SJ616-TD-E Bulk 807
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.37
    • 10000 $0.37
    		Buy Now

    Toshiba America Electronic Components 2SJ610(TE16L1,NQ)

    MOSFET P-CH 250V 2A PW-MOLD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SJ610(TE16L1,NQ) Reel
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Samtec Inc BDRA-92SJ6-10-12-0200

    20 GHZ, BULLS EYE: DOUBLE ROW, H
    Free Sample
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BDRA-92SJ6-10-12-0200 Bulk
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Samtec Inc BDRA-92SJ6-10-12-9999

    20 GHZ, BULLS EYE: DOUBLE ROW, H
    Free Sample
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BDRA-92SJ6-10-12-9999 Bulk
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Find more 2SJ61 price and stock on Findchips.com

    2SJ61 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SJ610 Toshiba TRANS MOSFET P-CH 250V 2A 3(2-7J1B) Original PDF
    2SJ610 Toshiba Original PDF
    2SJ610 Toshiba P-Channel MOSFET Original PDF
    2SJ610(2-7B1B) Toshiba 2SJ610 - TRANSISTOR 2 A, 250 V, 2.55 ohm, P-CHANNEL, Si, POWER, MOSFET, 2-7B1B, SC-64, 3 PIN, FET General Purpose Power Original PDF
    2SJ610(2-7J1B) Toshiba 2SJ610 - TRANSISTOR 2 A, 250 V, 2.55 ohm, P-CHANNEL, Si, POWER, MOSFET, 2-7J1B, SC-64, 3 PIN, FET General Purpose Power Original PDF
    2SJ610(TE16L1,NQ) Toshiba 2SJ610 - MOSFET P-CH 250V 2A PW-MOLD Original PDF
    2SJ612 Sanyo Semiconductor Medium Output MOSFETs Original PDF
    2SJ612 Sanyo Semiconductor P-Channel Silicon MOSFET Original PDF
    2SJ613 Sanyo Semiconductor Medium Output MOSFETs Original PDF
    2SJ615 Sanyo Semiconductor Medium Output MOSFETs Original PDF
    2SJ615 Sanyo Semiconductor P-Channel Silicon MOSFET Original PDF
    2SJ616 Sanyo Semiconductor Medium Output MOSFETs Original PDF
    2SJ618 Toshiba 2SJ618 - TRANSISTOR 10 A, 180 V, P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-16C1B, SC-67, 3 PIN, FET General Purpose Power Original PDF
    2SJ618 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SJ618(F) Toshiba 2SJ618 - MOSFET P-CH 180V 10A TO-3 Original PDF
    2SJ619 Toshiba TRANS MOSFET P-CH 100V 16A 4(2-9F1B) Original PDF
    2SJ619 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SJ619 Toshiba P-Channel MOSFET Original PDF
    2SJ619(TE24L,Q) Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 100V 16A SC-97 Original PDF

    2SJ61 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SJ619

    Abstract: No abstract text available
    Text: 2SJ619 東芝電界効果トランジスタ シリコンPチャネルMOS形 L2−π−MOSV 2SJ619 ○ スイッチングレギュレータ, DC-DC コンバータ用 ○ モータドライブ用 • 4 V 駆動です。 • オン抵抗が低い。 単位: mm


    Original     		2SJ619 2SJ619 PDF

    2SJ610

    Abstract: No abstract text available
    Text: 2SJ610 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type π-MOSV 2SJ610 Switching Regulator, DC/DC Converter and Motor Drive Applications Unit: mm 1.7 ± 0.2 6.8 MAX. • Low leakage current: IDSS = −100 A (VDS = −250 V) • Enhancement mode: Vth = −1.5 to −3.5 V (VDS = 10 V, ID = 1 mA)


    Original     		2SJ610 2SJ610 PDF

    2SJ619

    Abstract: No abstract text available
    Text: 2SJ619 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2-π-MOSV 2SJ619 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 7.7 S (typ.)


    Original     		2SJ619 2SJ619 PDF

    2SJ610

    Abstract: No abstract text available
    Text: 2SJ610 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type π-MOSV 2SJ610 Switching Regulator, DC-DC Converter and Motor Drive Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.85 Ω (typ.) • High forward transfer admittance: |Yfs| = 18 S (typ.)


    Original     		2SJ610 2SJ610 PDF

    2SJ619

    Abstract: No abstract text available
    Text: 2SJ619 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2-π-MOSV 2SJ619 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.) • High forward transfer admittance: Yfs = 7.7 S (typ.)


    Original     		2SJ619 -64transportation 2SJ619 PDF

    2SJ616

    Abstract: MARKING JW
    Text: Ordering number : ENN7270A 2SJ616 P-Channel Silicon MOSFET 2SJ616 Ultrahigh-Speed Switching Applications Preliminary Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 4V drive. unit : mm 2062A [2SJ616] 4.5 1.6 0.4 1.0 2.5


    Original     		ENN7270A 2SJ616 2SJ616] 25max 2SJ616 MARKING JW PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SJ610 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type -MOSV 2SJ610 Switching Regulator, DC/DC Converter and Motor Drive Applications Unit: mm 1.5 ± 0.2 6.5 ± 0.2 • Low leakage current: IDSS = −100 A (VDS = −250 V) • Enhancement mode: Vth = −1.5 to −3.5 V (VDS = 10 V, ID = 1 mA)


    Original     		2SJ610 PDF

    toshiba marking code transistor

    Abstract: K3497 2SK3497 toshiba 2-16c1b 2SJ618 Toshiba 2SJ
    Text: 2SK3497 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3497 High Power Amplifier Application Unit: mm z High breakdown voltage: VDSS = 180V z Complementary to 2SJ618 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating


    Original     		2SK3497 2SJ618 toshiba marking code transistor K3497 2SK3497 toshiba 2-16c1b 2SJ618 Toshiba 2SJ PDF

    2SJ619

    Abstract: No abstract text available
    Text: 2SJ619 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2-π-MOSV 2SJ619 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 7.7 S (typ.)


    Original     		2SJ619 2SJ619 PDF

    2SJ610

    Abstract: No abstract text available
    Text: 2SJ610 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type π-MOSV 2SJ610 Switching Regulator, DC/DC Converter and Motor Drive Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 1.85 Ω (typ.) • High forward transfer admittance: |Yfs| = 18 S (typ.)


    Original     		2SJ610 2SJ610 PDF

    2SJ613

    Abstract: No abstract text available
    Text: 2SJ613 SPICE PARAMETER Pch MOS FET model : BSIM3V3.2 Parameter Value LEVEL 8 3.2 VERSION VTH0 -0.72 NLX 3.2E-07 DVT2 -0.01 UB 1.0E-21 AGS 0.12 3.44E+03 RDSW WINT 0.62 NFACTOR CDSCD PCLM 1.4 DROUT 0.96 PVAG 0.01 MOBMOD 1 CAPMOD 3 CGDO 2.1E-11 CGDL 3.6E-10 CLC


    Original     		2SJ613 2E-07 0E-21 1E-11 6E-10 0E-07 919984E-6 919984E-12 6E-02 0E-08 2SJ613 PDF

    2SJ618

    Abstract: 2SK3497 j618 2SK3497(F)
    Text: 2SJ618 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type π-MOSⅤ 2SJ618 High-Power Amplifier Applications Unit: mm 20.5 ± 0.5 2.0 ± 0.3 1.0 ＋0.3 －0.25 Rating Unit Drain-source voltage VDSS −180 V Gate-source voltage VGSS ±20 V ＋0.3 0.6 －0.1


    Original     		2SJ618 2SJ618 2SK3497 j618 2SK3497(F) PDF

    2SJ616

    Abstract: No abstract text available
    Text: 2SJ616 Ordering number : EN7270B P-Channel Silicon MOSFET 2SJ616 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage


    Original     		2SJ616 EN7270B PW10s, 250mm20 2SJ616 PDF

    2SJ616

    Abstract: TA-100075
    Text: 2SJ616 注文コード No. N 7 2 7 0 B 三洋半導体データシート 半導体データシート No.N7270A をさしかえてください。 2SJ616 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長


    Original     		2SJ616 N7270A 250mm2 IT04764 250mm2 IT04766 IT04767 IT04768 2SJ616 TA-100075 PDF

    Marking JW

    Abstract: JW Miller 2SJ616 TA-100075 2062a
    Text: Ordering number : ENN7270 2SJ616 P-Channel Silicon MOSFET 2SJ616 Ultrahigh-Speed Switching Applications Preliminary Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 4V drive. unit : mm 2062A [2SJ616] 4.5 1.6 0.4 1.0 2.5


    Original     		ENN7270 2SJ616 2SJ616] 25max Marking JW JW Miller 2SJ616 TA-100075 2062a PDF

    2SJ613

    Abstract: No abstract text available
    Text: Ordering number : ENN7296 2SJ613 P-Channel Silicon MOSFET 2SJ613 Ultrahigh-Speed Switching Applications Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2062A [2SJ613] 4.5 1.6 0.4 1.0 2.5 4.25max 1.5


    Original     		ENN7296 2SJ613 2SJ613] 25max 2SJ613 PDF

    2SJ612

    Abstract: No abstract text available
    Text: 2SJ612 Ordering number : EN7178B P-Channel Silicon MOSFET 2SJ612 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage


    Original     		2SJ612 EN7178B PW10s, 250mm20 2SJ612 PDF

    2SJ615

    Abstract: TA-3846
    Text: 2SJ615 Ordering number : EN7179B P-Channel Silicon MOSFET 2SJ615 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage


    Original     		2SJ615 EN7179B PW10s, 250mm20 2SJ615 TA-3846 PDF

    2SJ618

    Abstract: 2SK3497 j618
    Text: 2SJ618 東芝電界効果トランジスタ シリコンPチャネルMOS形 π-MOSV 2SJ618 ○ 低周波電力増幅用 単位: mm VDSS −180 V ゲ ー ト ・ ソ ー ス 間 電 圧 VGSS ±20 V DC (注 1) ID −10 A パルス (注 1) ID −30 A (Tc=25℃)


    Original     		2SJ618 2SK3497 SC-67 2-16C1B 2SJ618 2SK3497 j618 PDF

    TA-3846

    Abstract: 2SJ615 TA384
    Text: 2SJ615 注文コード No. N 7 1 7 9 B 三洋半導体データシート 半導体データシート No.N7179A をさしかえてください。 2SJ615 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長


    Original     		2SJ615 N7179A 250mm2 IT04264 250mm2 IT04270 IT04271 TA-3846 2SJ615 TA384 PDF

    2SJ610

    Abstract: No abstract text available
    Text: 2SJ610 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type π-MOSV 2SJ610 Switching Regulator, DC-DC Converter and Motor Drive Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.85 Ω (typ.) · High forward transfer admittance: |Yfs| = 18 S (typ.)


    Original     		2SJ610 2SJ610 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SJ619 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2-π-MOSV 2SJ619 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Unit: mm 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.) •


    Original     		2SJ619 to150 PDF

    2SJ610

    Abstract: No abstract text available
    Text: 2SJ610 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type π-MOSV 2SJ610 Switching Regulator, DC-DC Converter and Motor Drive Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.85 Ω (typ.) • High forward transfer admittance: |Yfs| = 18 S (typ.)


    Original     		2SJ610 2SJ610 PDF

    2SJ615

    Abstract: No abstract text available
    Text: Ordering number : ENN7179A 2SJ615 P-Channel Silicon MOSFET 2SJ615 Ultrahigh-Speed Switching Applications Preliminary Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 4V drive. unit : mm 2062A [2SJ615] 4.5 1.6 0.4 1.0 2.5


    Original     		ENN7179A 2SJ615 2SJ615] 25max 2SJ615 PDF