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    Part ECAD Model Manufacturer Description Download Buy
    2SJ530STR-E Renesas Electronics Corporation Pch Single Power Mosfet -60V -15A 100Mohm DPAK(S)/To-252 Visit Renesas Electronics Corporation
    2SJ530STL-E Renesas Electronics Corporation Pch Single Power Mosfet -60V -15A 100Mohm DPAK(S)/To-252 Visit Renesas Electronics Corporation

    2SJ530S Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SJ530(S) Hitachi Semiconductor Power switching MOSFET Original PDF
    2SJ530S Hitachi Semiconductor Silicon P Channel MOS FET High Speed Power Switching Original PDF
    2SJ530S Kexin P-Channel MOSFET Original PDF
    2SJ530(S) Renesas Technology Silicon P Channel MOS FET Original PDF
    2SJ530S Renesas Technology Silicon P Channel MOS FET High Speed Power Switching Original PDF
    2SJ530S Renesas Technology Silicon P Channel MOS FET High Speed Power Switching Original PDF
    2SJ530S Renesas Technology Silicon P Channel MOS FET Original PDF

    2SJ530S Datasheets Context Search

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    2SJ530S

    Abstract: No abstract text available
    Text: IC MOSFET SMD Type Hight Speed Power Switching 2SJ530S TO-252 Features Low on-resistance typ. +0.15 1.50-0.15 RDS on = 0.08 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1


    Original     		PDF 2SJ530S O-252 2SJ530S

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    rjp3053

    Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
    Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5


    Original     		PDF REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009

    2SJ530stl-e

    Abstract: 2SJ530 2SJ530L-E PRSS0004ZD-B PRSS0004ZD-C
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    2SJ530STL-E

    Abstract: 2SJ530 2SJ530L-E PRSS0004ZD-B PRSS0004ZD-C 2SJ530STL
    Text: 2SJ530 L , 2SJ530(S) Silicon P Channel MOS FET REJ03G0880-0500 (Previous: ADE-208-655C) Rev.5.00 Sep 07, 2005 Description High speed power switching Features • Low on-resistance RDS (on) = 0.08 Ω typ. • 4 V gate drive devices. • High speed switching.


    Original     		PDF 2SJ530 REJ03G0880-0500 ADE-208-655C) PRSS0004ZD-B PRSS0004ZD-C 2SJ530STL-E 2SJ530L-E PRSS0004ZD-B PRSS0004ZD-C 2SJ530STL