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    2SJ51 Search Results

    2SJ51 Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    2SJ517YYTL-E Renesas Electronics Corporation Pch Single Power Mosfet -20V -2A 240Mohm Upak/Sc-62 Visit Renesas Electronics Corporation
    2SJ517YYTR-E Renesas Electronics Corporation Pch Single Power Mosfet -20V -2A 240Mohm Upak/Sc-62 Visit Renesas Electronics Corporation
    2SJ518AZTR-E Renesas Electronics Corporation Pch Single Power Mosfet -60V -2A 460Mohm Upak/Sc-62 Visit Renesas Electronics Corporation
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    2SJ51 Price and Stock

    Panasonic Electronic Components ERG-2SJ510V

    RES 51 OHM 5% 2W AXIAL
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    DigiKey ERG-2SJ510V Cut Tape 615 1
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    ERG-2SJ510V Ammo Pack
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    Schurter Electronic Components FMER-G62S-J517

    LINE FILTER 1.2KVDC 150A CHASSIS
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    DigiKey FMER-G62S-J517 Bulk 1 1
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    Avnet Americas FMER-G62S-J517 Box 21 Weeks, 3 Days 1
    • 1 $464.98492
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    Mouser Electronics FMER-G62S-J517
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    Master Electronics FMER-G62S-J517
    • 1 $448.92
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    Sager FMER-G62S-J517 1
    • 1 $430.38
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    • 100 $397.69
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    Panasonic Electronic Components ERG-2SJ512

    RES 5.1K OHM 5% 2W AXIAL
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    Master Electronics ERG-2SJ512 5,803
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    Panasonic Electronic Components ERG-2SJ510

    RES 51 OHM 5% 2W AXIAL
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    Master Electronics ERG-2SJ510 3,511
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    Panasonic Electronic Components ERG-2SJ511

    RES 510 OHM 5% 2W AXIAL
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    Bristol Electronics ERG-2SJ511 19
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    Find more 2SJ51 price and stock on Findchips.com

    2SJ51 Datasheets (46)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SJ51 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SJ51 Unknown FET Data Book Scan PDF
    2SJ51 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SJ51 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SJ511 Toshiba TRANS MOSFET P-CH 30V 2A 3(2-5K1B) Original PDF
    2SJ511 Toshiba Original PDF
    2SJ511 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    2SJ511 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SJ511 Toshiba Silicon P-channel MOS type field effect transistor for high speed, high current switching, chopper regulator, DC-DC converter, motor drive applications Scan PDF
    2SJ511 Toshiba FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (LL-pi-MOSV) Scan PDF
    2SJ511(TE12L) Toshiba TRANS MOSFET P-CH 30V 2A 3(2-5K1B) Original PDF
    2SJ511TE12L Toshiba 2SJ511TE12L - Trans MOSFET P-CH 30V 2A 4-Pin(3+Tab) PW-Mini T/R Original PDF
    2SJ512 Toshiba Original PDF
    2SJ512 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    2SJ512 Toshiba TRANS MOSFET P-CH 250V 5A 3(2-10R1B) Original PDF
    2SJ512 Toshiba P-Channel MOSFET Original PDF
    2SJ512 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SJ512 Toshiba Silicon P channel MOS type transistor for high speed,high current switching, chopper regulator, DC-DC converter and motor drive applications Scan PDF
    2SJ512 Toshiba FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE(pi-MOS V) Scan PDF
    2SJ513 Toshiba Original PDF

    2SJ51 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2sj511

    Abstract: No abstract text available
    Text: 2SJ511 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ511 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 0.32 Ω (typ.) : |Yfs| = 1.4 S (typ.)


    Original     		PDF 2SJ511 2sj511

    2SJ517

    Abstract: 2SJ517YYTL-E 2SJ517YYTR-E
    Text: 2SJ517 Silicon P Channel MOS FET REJ03G0874-0400 Previous: ADE-208-575B Rev.4.00 Sep 07, 2005 Description High speed power switching Features • Low on-resistance RDS (on) = 0.18 Ω typ. (at VGS = –4 V, ID = –1 A) • Low drive current • High speed switching


    Original     		PDF 2SJ517 REJ03G0874-0400 ADE-208-575B) PLZZ0004CA-A 2SJ517 2SJ517YYTL-E 2SJ517YYTR-E

    2SJ516

    Abstract: No abstract text available
    Text: 2SJ516 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type π−MOSV 2SJ516 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm l Low drain−source ON resistance : RDS (ON) = 0.6 Ω (typ.) l High forward transfer admittance : |Yfs| = 5.3 S (typ.)


    Original     		PDF 2SJ516 2SJ516

    2SJ512

    Abstract: DSA003658
    Text: 2SJ512 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2−π−MOSV 2SJ512 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance : |Yfs| = 3.7 S (typ.)


    Original     		PDF 2SJ512 2SJ512 DSA003658

    2SJ511

    Abstract: No abstract text available
    Text: 2SJ511 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ511 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm 4-V gate drive Low drain−source ON resistance : RDS (ON) = 0.32 Ω (typ.) : |Yfs| = 1.4 S (typ.)


    Original     		PDF 2SJ511 2SJ511

    2SJ51

    Abstract: 2SJ518 Hitachi 2SJ Hitachi DSA00389
    Text: 2SJ518 Silicon P Channel MOS FET High Speed Power Switching ADE-208-580B Z 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.35 Ω typ. at (V GS = –10V, ID = –1A) • Low drive current • 4 V gete drive devices • High speed switching


    Original     		PDF 2SJ518 ADE-208-580B 2SJ51 2SJ518 Hitachi 2SJ Hitachi DSA00389

    2SJ517

    Abstract: Hitachi DSA00335
    Text: 2SJ517 Silicon P Channel MOS FET High Speed Power Switching ADE-208-575B Z 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.18 Ω typ. (at V GS =–4V, ID =–1A) • Low drive current • High speed switching • 2.5V gate drive devices.


    Original     		PDF 2SJ517 ADE-208-575B 2SJ517 Hitachi DSA00335

    2SJ512

    Abstract: No abstract text available
    Text: 2SJ512 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2−π−MOSV 2SJ512 Chopper Regulator, DC−DC Converter and Motor Drive Applications l Low drain−source ON resistance : RDS (ON) = 1.0 Ω (typ.) l High forward transfer admittance : |Yfs| = 3.7 S (typ.)


    Original     		PDF 2SJ512 2SJ512

    J512

    Abstract: 2SJ512 JEITA SC-67 25IAR
    Text: 2SJ512 東芝電界効果トランジスタ シリコンPチャネルMOS形 π−MOSⅤ 2SJ512 ○ スイッチングレギュレータDC−DC コンバータ用 ○ モータドライブ用 z 単位: mm : RDS (ON) = 1.0Ω (標準) オン抵抗が低い。


    Original     		PDF 2SJ512 -250V) SC-67 2-10R1B 2002/95/EC) J512 2SJ512 JEITA SC-67 25IAR

    j512 transistor

    Abstract: 2SJ512 J512
    Text: 2SJ512 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2−π−MOSV 2SJ512 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 1.0 Ω (typ.) z High forward transfer admittance : |Yfs| = 3.7 S (typ.)


    Original     		PDF 2SJ512 j512 transistor 2SJ512 J512

    Untitled

    Abstract: No abstract text available
    Text: 2SJ516 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type π−MOSV 2SJ516 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 0.6 Ω (typ.) High forward transfer admittance : |Yfs| = 5.3 S (typ.)


    Original     		PDF 2SJ516

    Untitled

    Abstract: No abstract text available
    Text: 2SJ512 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ512 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance : |Yfs| = 3.7 S (typ.)


    Original     		PDF 2SJ512

    2SJ518AZTL-E

    Abstract: 2SJ518AZTR-E 2SJ518
    Text: 2SJ518 Silicon P Channel MOS FET REJ03G0875-0400 Previous: ADE-208-580B Rev.4.00 Sep 07, 2005 Description High speed power switching Features • Low on-resistance RDS (on) = 0.35 Ω typ. (at VGS = –10 V, ID = –1 A) • Low drive current • 4 V gate drive devices


    Original     		PDF 2SJ518 REJ03G0875-0400 ADE-208-580B) PLZZ0004CA-A 2SJ518AZTL-E 2SJ518AZTR-E 2SJ518

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SJ511 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-M O SV 2SJ511 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 4V Gate Drive Low Drain-Source ON Resistance : RDS (ON)= 0.32Q (Typ.)


    OCR Scan     		PDF 2SJ511 --100/j --30V) j--25H

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SJ512 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE tt-M O SV 2SJ 512 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • • • • INDUSTRIAL APPLICATIONS Unit in mm


    OCR Scan     		PDF 2SJ512 20kil)

    2SJ512

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ512 2SJ512 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE tt-M O SV HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS • • • •


    OCR Scan     		PDF 2SJ512 2SJ512

    2SJ511

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ511 2SJ511 TO SHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL M O S TYPE L2- tt- M O S V HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS 1.6MAX.


    OCR Scan     		PDF 2SJ511 2SJ511

    2SJ516

    Abstract: transistor n chanel
    Text: TOSHIBA 2SJ516 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE tt-MOSV 2SJ516 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 2.7±0.2 r <v> •


    OCR Scan     		PDF 2SJ516 2SJ516 transistor n chanel

    2SJ512

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ512 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE tt-MOSV 2SJ512 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 10 ±0.3 r • Low Drain-Source ON Resistance


    OCR Scan     		PDF 2SJ512 -250V) 2SJ512

    Untitled

    Abstract: No abstract text available
    Text: 2SJ518 Silicon P Channel MOS FET High Speed Power Switching HITACHI Features Low on-resistance RDS on = 0.35 Si typ. at (VGS = -10V, ID= -1A) • Low drive current • 4 V gate drive devices • High speed switching Outline U PAK ADE-208-580B (Z) 3rd. Edition


    OCR Scan     		PDF 2SJ518 ADE-208-580B

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ512 TOSHIBA FIELD EFFECT TRANSISTOR i SILICON P CHANNEL MOS TYPE tt-M O SV <MT; Vi Vm i INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 10 + 0.3


    OCR Scan     		PDF 2SJ512

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SJ511 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL M O S TYPE L2- tt- M O S V 2SJ511 HIGH SPEED, HIGH CURRENT SW ITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER A N D M O TO R DRIVE APPLICATIONS 4V Gate Drive


    OCR Scan     		PDF 2SJ511 --100//A --30V) 20ki2) --25H

    2SJ516

    Abstract: No abstract text available
    Text: T O S H IB A 2SJ516 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE tt-M OSV 2SJ516 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 10 ±0.3 Low Drain-Source ON Resistance


    OCR Scan     		PDF 2SJ516 2SJ516

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SJ511 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-;r-M O S V 2SJ511 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • • • • •


    OCR Scan     		PDF 2SJ511