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    2SJ380 Price and Stock

    Toshiba America Electronic Components 2SJ380(F)

    MOSFET P-CH 100V 12A TO220NIS
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    2SJ380 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SJ380 Toshiba TRANS MOSFET N-CH 100V 12A 3(2-10R1B) Original PDF
    2SJ380 Toshiba Original PDF
    2SJ380 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    2SJ380 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SJ380 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SJ380 Toshiba Field Effect Transistor Silicon P Channel MOS Type (Power (L, 2)-pi-MOS V) Scan PDF
    2SJ380 Toshiba Silicon P channel field effect transistor for high speed, high current switching applications, relay drive, DC-DC converter and motor drive applications Scan PDF
    2SJ380 Toshiba P-Channel MOSFET Scan PDF
    2SJ380(F) Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 100V 12A TO220NIS Original PDF

    2SJ380 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    J380

    Abstract: transistor j380 2SJ380
    Text: 2SJ380 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L2-π-MOSV 2SJ380 Relay Drive, DC-DC Converter and Motor Drive Applications • 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.) • High forward transfer admittance: |Yfs| = 7.7 S (typ.)


    Original     		PDF 2SJ380 J380 transistor j380 2SJ380

    J380

    Abstract: 2sj380
    Text: 2SJ380 東芝電界効果トランジスタ シリコンPチャネルMOS形 L2-π-MOSV 2SJ380 ○ リレー駆動､DC-DC コンバータ用 ○ モータドライブ用 • 4 V 駆動です。 • オン抵抗が低い。 単位: mm : RDS (ON) = 0.15 Ω (標準)


    Original     		PDF 2SJ380 SC-67 2-10R1B J380 2sj380

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    J380

    Abstract: transistor j380 2SJ380
    Text: 2SJ380 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2-π-MOSV 2SJ380 Relay Drive, DC-DC Converter and Motor Drive Applications • Unit: mm 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.) • High forward transfer admittance: |Yfs| = 7.7 S (typ.)


    Original     		PDF 2SJ380 J380 transistor j380 2SJ380

    Untitled

    Abstract: No abstract text available
    Text: 2SJ380 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L2-π-MOSV 2SJ380 Relay Drive, DC-DC Converter and Motor Drive Applications • Unit: mm 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.) • High forward transfer admittance: |Yfs| = 7.7 S (typ.)


    Original     		PDF 2SJ380

    transistor j380

    Abstract: 2SJ380 J380
    Text: 2SJ380 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2-π-MOSV 2SJ380 Relay Drive, DC-DC Converter and Motor Drive Applications • Unit: mm 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.) • High forward transfer admittance: |Yfs| = 7.7 S (typ.)


    Original     		PDF 2SJ380 transistor j380 2SJ380 J380

    transistor j380

    Abstract: 2SJ380 J380
    Text: 2SJ380 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2-π-MOSV 2SJ380 Relay Drive, DC-DC Converter and Motor Drive Applications • Unit: mm 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.) • High forward transfer admittance: |Yfs| = 7.7 S (typ.)


    Original     		PDF 2SJ380 transistor j380 2SJ380 J380

    Untitled

    Abstract: No abstract text available
    Text: 2SJ380 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2-π-MOSV 2SJ380 Relay Drive, DC-DC Converter and Motor Drive Applications Unit: mm • 4-V gate drive · Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.) · High forward transfer admittance: |Yfs| = 7.7 S (typ.)


    Original     		PDF 2SJ380

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF

    mosfet cross reference

    Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local


    Original     		PDF

    2SK2056

    Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
    Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1


    Original     		PDF BCE0017B 2SK2056 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078

    2SK3567 equivalent

    Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
    Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


    Original     		PDF BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603

    2SK3878 equivalent

    Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
    Text: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)


    Original     		PDF 2SK2963 2SK2962 2SJ508 2SJ509 2SK3670 2SJ313 2SJ338 2SK2013 2SK2162 2SJ360 2SK3878 equivalent 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718

    IRF9310

    Abstract: mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross Reference lists MOSFETs by either industry standard part number or by manufacturer’s part number for which there is an ON Semiconductor nearest or similar replacement. For devices not listed, or for additional


    Original     		PDF device2176 r14153 CR108/D IRF9310 mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution

    2SJ380

    Abstract: 015IL
    Text: TOSHIBA 2SJ380 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV 2SJ380 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS r <v> 4V Gate Drive Low Drain-Source ON Resistance


    OCR Scan     		PDF 2SJ380 015IL

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SJ380 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-tt- M O S V 2SJ380 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S U n it in mm RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS


    OCR Scan     		PDF 2SJ380 --100/iA --60V) 20kf2) --12A,

    2SJ380

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ380 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV 2SJ380 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 10 ±0.3 4 V Gate Drive


    OCR Scan     		PDF 2SJ380 2SJ380

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ380 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-MOSV 2SJ380 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm 3.2 ± 0 .2 4V Gate Drive Low Drain-Source ON Resistance l° 2 .7 ± 0 .2 3.0 )


    OCR Scan     		PDF 2SJ380 --60V)

    2SJ380

    Abstract: No abstract text available
    Text: TOSHIBA FIELD EFFECT TRANSISTOR 2SJ380 SILICON P CHANNEL MOS TYPE L2-7T-MOS V SEM ICONDUCTOR TO SH IBA TECHNICAL DATA (2SJ380) INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE


    OCR Scan     		PDF 2SJ380 2SJ380) 0-15il --60V) 20kfi) 2SJ380 --25V,

    2SJ380

    Abstract: transistor 2sj380
    Text: TOSHIBA FIELD EFFECT TRANSISTOR 2SJ380 SILICON P CHANNEL MOS TYPE L2-7T-MOS V SEM ICONDUCTOR TO SH IBA TECHNICAL DATA (2SJ380) INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE


    OCR Scan     		PDF 2SJ380 2SJ380) --60V) 20kfl) 2SJ380 transistor 2sj380

    TS251

    Abstract: 2SJ380
    Text: TOSHIBA 2SJ380 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV 2SJ380 RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 4 V Gate D rive Low Drain-Source ON Resistance : R ß S (O N ) = 0.15 O (Typ.) High Forward Transfer Adm ittance : |Yfs| = 7.7 S (Typ.)


    OCR Scan     		PDF 2SJ380 TS251 2SJ380

    2SJ380

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ380 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV 2SJ380 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 10 ± 0 .3 r ^ 3 .2 ± 0.2


    OCR Scan     		PDF 2SJ380

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA 2SJ380 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV 2SJ380 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 10 ± 0.3 . 03.2 ± 0.2


    OCR Scan     		PDF 2SJ380

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA 2SJ380 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV 2SJ380 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 4 V Gate Drive Low Drain-Source ON Resistance


    OCR Scan     		PDF 2SJ380