2SJ285 Search Results

2SJ285 Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
2sj285		Sanyo Semiconductor	P-channel MOS silicon FET, very high-speed switching application		Original	PDF
2SJ285		Sanyo Semiconductor	Ultrahigh-Speed Switching Applications		Original	PDF
2SJ285		Unknown	FET Data Book		Scan	PDF
2SJ285		Sanyo Semiconductor	Power Mosfets / Transistors		Scan	PDF
2SJ285		Sanyo Semiconductor	CP Type Transistors		Scan	PDF

2SJ285 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
marking BM Abstract: "MARKING BM" 2SJ285 EN4221 Text: Ordering number:EN4221 P-Channel Silicon MOSFET 2SJ285 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2091A 0.4 3 0.5 [2SJ285] 0.16 0.95 0.95 2 1.9 2.9 2.5	Original	EN4221 2SJ285 2SJ285] marking BM "MARKING BM" 2SJ285 EN4221	PDF
ITR00362 Abstract: ITR00363 2SJ285 ITR00358 ITR00359 ITR00360 ITR00361 Text: 注文コード No.N 4 2 2 1 A 2SJ285 No. 4 2 2 1 A 61599 半導体ニューズ No.4221 とさしかえてください。 2SJ285 特長 P チャネル MOS 形シリコン電界効果トランジスタ超高速スイッチング用・低オン抵抗。・超高速スイッチング。	Original	2SJ285 150mA 150mA, --10V ITR00362 ITR00363 --30V ITR00362 ITR00363 2SJ285 ITR00358 ITR00359 ITR00360 ITR00361	PDF
2SJ285 Abstract: marking BM Text: Ordering number:EN4221 P-Channel Silicon MOSFET 2SJ285 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2091A 0.4 3 0.5 [2SJ285] 0.16 0.95 0.95 2 1.9 2.9 2.5	Original	EN4221 2SJ285 2SJ285] 2SJ285 marking BM	PDF
74HCT244B1 Abstract: epson 320X240 MC68K Sharp HR TFT PNP power transistors by hitachi p948 MC68EZ328 VR4181A user manual Text: S1D13706 Embedded Memory LCD Controller S1D13706 TECHNICAL MANUAL Document Number: X31B-Q-001-06 Copyright 2001 Epson Research and Development, Inc. All Rights Reserved. Information in this document is subject to change without notice.You may download and use this document, but only for your own use in	Original	S1D13706 X31B-Q-001-06 res2827-4346 X31B-G-018-02 104-pin 74HCT244B1 epson 320X240 MC68K Sharp HR TFT PNP power transistors by hitachi p948 MC68EZ328 VR4181A user manual	PDF
2310 dhi Abstract: epson t11 toshiba LCD 320X240 toshiba lcd inverter pinout transistor p945 micro transistor T5c transistor NEC D 882 p 37 PIN TFT MOBILE DISPLAY 8K 7W14F schematic diagram crt tv sharp Text: S1D13706 Embedded Memory LCD Controller S1D13706 TECHNICAL MANUAL Document Number: X31B-Q-001-06 Copyright 2001 Epson Research and Development, Inc. All Rights Reserved. Information in this document is subject to change without notice. You may download and use this document, but only for your own use in	Original	S1D13706 S1D13706 X31B-Q-001-06 SA-1110 X31B-G-019-02 2310 dhi epson t11 toshiba LCD 320X240 toshiba lcd inverter pinout transistor p945 micro transistor T5c transistor NEC D 882 p 37 PIN TFT MOBILE DISPLAY 8K 7W14F schematic diagram crt tv sharp	PDF
2sk3436 Abstract: 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744 Text: Ordering number : E I 0 1 3 8 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis	Original	TND023F FX504 CPH5504 MCH5805 FX505 HPA72R TND024F FX506 MCH3301 TND024MP 2sk3436 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744	PDF
2sk3436 Abstract: 2sc6093 2Sa1872 2SK1597 2SK3850 2SC5269 TT2084 2SC4943 2SC5793 2sa1970 Text: 注文コード No. I 0 1 3 8 ディスクリートデバイス製品保守品・廃止品に関するお知らせいつも半導体製品をご使用いただきまして誠にありがとうございます。このたび、下記三洋半導体製品を保守品または廃止品と致します。	Original	40610HKPC TC-00002289 CPH5815 MCH5815 MCH6629 MCH6649 CPH6610 CPH6614 SCH1411 SCH1436 2sk3436 2sc6093 2Sa1872 2SK1597 2SK3850 2SC5269 TT2084 2SC4943 2SC5793 2sa1970	PDF
1b15 shf la Abstract: 2310 dhi S1D13706F00 toshiba lcd power board schematic lcd tv inverter board schematic 20X2 LCD DISPLAY PINOUT 37 PIN TFT MOBILE DISPLAY 8K transistor NEC D 882 p EPC1441PC8 ir3e203 Text: S1D13706 Embedded Memory LCD Controller S1D13706 TECHNICAL MANUAL Document Number: X31B-Q-001-06 Copyright 2001 Epson Research and Development, Inc. All Rights Reserved. Information in this document is subject to change without notice. You may download and use this document, but only for your own use in	Original	S1D13706 S1D13706 X31B-Q-001-06 SA-1110 X31B-G-019-02 1b15 shf la 2310 dhi S1D13706F00 toshiba lcd power board schematic lcd tv inverter board schematic 20X2 LCD DISPLAY PINOUT 37 PIN TFT MOBILE DISPLAY 8K transistor NEC D 882 p EPC1441PC8 ir3e203	PDF
2SJ26 Abstract: No abstract text available Text: VDSS = 60V, P-channel Absolute maximum ratings at Ta = 25°C Type No. Package VDSS W 2SJ285 Voss V CP 2SJ190 •o (A) Po' W 0.25 0.25* ^GS(off) min to max (V) 1.0 PCP ^DS (on) RoS(on) typ/maxat Vß$-4V (ii) typ/maxat VGS = 10V 3.0/4.0 2.2/3.0 0.35 45 1.2/1.6	OCR Scan	2SJ285 2SJ190 2SJ288 2SJ191 2SJ192 2SJ362 2SJ414 O-220 O-220ML 2SJ26	PDF
Untitled Abstract: No abstract text available Text: Power MOSFETs Electrical characteristic» T. » 31 °Q AtooMe mKknum ratings . Owto» _ - Pwtogi Appflcaflons m _ ' _ Voss » _ Voss w t# w 2SJ284* CP Very high-speed switch 30 ±15 0.3 2SJ285* CP Very high-speed switch 60 ±15 0.25 2SJ286* CP Very high-speed switch	OCR Scan	2SJ284* 2SJ286* 2SK1847 2SJ285* 2SJ233 2SK1731 2SK1732 2SK1734 2SK1735 DD14SSD	PDF
2SJ285 Abstract: No abstract text available Text: Ordering n u m b e r:E N 4 2 2 1 _ 2SJ285 P-Channel MOS Silicon FET Very High-Speed Switching Applications F eatures • Low ON resistance. • Very high-speed switching. • Low-voltage drive. A bsolute M axim um R atings at Ta = 25°C Drain to Source Voltage	OCR Scan	EN4221 2SJ285 -60VtVGS Nq4221-3/3	PDF
2sk77 Abstract: 2SK772 2SK444 2sk20 2SK1332 2SK968 2sk332 2sk427 2SK36 2sk377 j Text: SAftYO Smal 1-signal u r e s F e a FETs Case Outlines unit:mm SANYO:SMCP 1. Gate, 2. Source, 3. Drain. ♦ Very low noise figure »Large lYfsl * Low gate leak current ♦ Small-sized package permitting FET-used sets to be made smaller alt LF Amp.Low Noise,Analog Switch,Impedance Conversion Applications	OCR Scan	250mm 2SK212, 2SK315, 2SK544, 2SK669, 2SK1841 2SK2270. 2SK304, 2SK404, 2SK427, 2sk77 2SK772 2SK444 2sk20 2SK1332 2SK968 2sk332 2sk427 2SK36 2sk377 j	PDF
2sc3153 Abstract: 2SJ335 transistor 2sc4460 2SC4427 2sc4460 2SC3151 2SC3152 2SC3277 2SC3448 2SC3449 Text: Continued from previous page Absolute maximum ratings Type No. Package type Applications Electrical characteristics Ta « 25 ~C hre@VCE • 1C VCBO (V) VCEO (V) V ebo (V) (A) (W ) A 1C PC fr@ VC E ■ IC tf(toff) max U s) (A) fr (MHz) 2SC3151 T03PB Switching requlator	OCR Scan	2SC3151 T03PB 10to40 2SC3152 2SC3I53 2SC3277 2sc3153 2SJ335 transistor 2sc4460 2SC4427 2sc4460 2SC3448 2SC3449	PDF
2SK968 Abstract: 2SK1375 2sk2073 2SK1747 2SK333 2SK544 2SK937 2SK669 2SK332 2SK715 Text: b3E » • 7Ti7G7b 0012422 T2Û « T S A J S A 0 Y O Small-signal F e a t u r e s FETs Case Outlines unit-'mm SANYO:SMCP 1. Gate, 2. Source, 3. Drain. Very low noise figure Large lYfsl * Low gate leak current * Smal1-si zed package permitting FET-used sets to be made smaller	OCR Scan	250mm 2SK2170 2SK1068CB) 2SK1069CFJ) 2SK1332 2SK1375CC) 2SK209KH) 2SK212, 2SK315, 2SK544. 2SK968 2SK1375 2sk2073 2SK1747 2SK333 2SK544 2SK937 2SK669 2SK332 2SK715	PDF

2SJ239 Abstract: 2SJ238 2sJ241 2SJ240 2SJ292 2SJ295 2SJ230 2SJ231 2SJ232 2SJ234 Text: - 26 - f 33 € tt m € & £ ft . m ffi K E 2SJ230 Hi¥ HS SV MOS P 2SJ231 =& HS SW MOS P E V* V m * (V) * * 48 % 3 I* X P d /P c h (A) * * (W) I gss (max) (A) Vg s (V) w Ip s (min) (max) Vd s (A) (A) (V) (Ta'25°C) tt (min) (max) Vd s (V) (V) (V) -60 DSS	OCR Scan	Ta-25 2SJ230 2SJ231 2SJ232 2SJZ33 2SJ234Ã 155ns, 500nstyp 2SJ291 200ns, 2SJ239 2SJ238 2sJ241 2SJ240 2SJ292 2SJ295 2SJ232 2SJ234	PDF