2SJ230
Abstract: No abstract text available
Text: Ordering number : EN3815 SANYO Semiconductors DATA SHEET 2SJ230 P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Its height onboard is 9.5mm.
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EN3815
2SJ230
2SJ230]
2SJ230
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2SJ230
Abstract: ITR00132 ITR00133 ITR00134 ITR00135 ITR00136 ITR00137
Text: 注文コード No.N 3 8 1 5 2SJ230 三洋半導体データシート 2SJ230 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。
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2SJ230
--30V
--10V
ITR00136
ITR00139
ITR00140
2SJ230
ITR00132
ITR00133
ITR00134
ITR00135
ITR00136
ITR00137
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2SJ230
Abstract: No abstract text available
Text: Ordering number:EN3815 P-Channel Silicon MOSFET 2SJ230 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Its height onboard is 9.5mm. · Meets radial taping. unit:mm
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EN3815
2SJ230
2SJ230]
2SJ230
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2sc5203
Abstract: 2SK3615 2sk*3615 2SK1731 TIG022TS 2SJ633 2SJ646 2SK3492 2SJ636 MCH6005
Text: Ordering number : E I 0 0 2 3 Announcement Regarding Discontinuation and Limited Availability to Existing Customers of Hyper Device Products Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis.
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CPH6405
CPH6434
TIG008SS
TIG014SS
TIG002SS
TIG008TS
TIG022TS
TIG004SS
2sc5203
2SK3615
2sk*3615
2SK1731
TIG022TS
2SJ633
2SJ646
2SK3492
2SJ636
MCH6005
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Untitled
Abstract: No abstract text available
Text: 2SJ230 2085 LD L o w D rive S eries V Dss = 6 0 V P Channel Power M OSFET F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Its height onboard is 9.5mm. • M eets radial taping. tisolute M ax im u m R a tin g s a t Ta = 25°C
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2SJ230
--10V
--20V
31893MH
A8-7975
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Vgs2,0v
Abstract: 2SJ230
Text: Ordering number:EN3815 -, No.3815 _ 2SJ230 P-Channel MOS Silicon FET Very High-Speed Switching Applications Features • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Its height onboard is 9.5mm. • Meets radial taping.
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EN3815
2SJ230
Vgs2,0v
2SJ230
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2SJ239
Abstract: 2SJ238 2sJ241 2SJ240 2SJ292 2SJ295 2SJ230 2SJ231 2SJ232 2SJ234
Text: - 26 - f 33 € tt m € & £ ft . m ffi K E 2SJ230 Hi¥ HS SV MOS P 2SJ231 =& HS SW MOS P E V* V m * (V) * * 48 % 3 I* X P d /P c h (A) * * (W) I gss (max) (A) Vg s (V) w Ip s (min) (max) Vd s (A) (A) (V) (Ta'25°C) tt (min) (max) Vd s (V) (V) (V) -60 DSS
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Ta-25
2SJ230
2SJ231
2SJ232
2SJZ33
2SJ234Ã
155ns,
500nstyp
2SJ291
200ns,
2SJ239
2SJ238
2sJ241
2SJ240
2SJ292
2SJ295
2SJ232
2SJ234
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TO-32-070
Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
Text: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)
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T0220ML
TO-32-070
2SA1678
FC102
2SC4449
2SA1416
2SJ193
2sk283
2sC4106 application notes
2SC3383
FC124
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Untitled
Abstract: No abstract text available
Text: Power MOSFETs Electrical characteristic» T. » 31 °Q AtooMe mKknum ratings . Owto» _ - Pwtogi Appflcaflons m _ ' _ Voss » _ Voss w t# w 2SJ284* CP Very high-speed switch 30 ±15 0.3 2SJ285* CP Very high-speed switch 60 ±15 0.25 2SJ286* CP Very high-speed switch
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2SJ284*
2SJ286*
2SK1847
2SJ285*
2SJ233
2SK1731
2SK1732
2SK1734
2SK1735
DD14SSD
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2SJ468
Abstract: 2SJ191 2SJ271 2SJ260 2SJ189 2SJ192 2SJ194 2SJ195 2SJ281 2SJ336
Text: Continued from previous page Electrical characteristics Ta = 25 V Absolute maximum ratings Type No. Package type Applications Rds(<w) @ Id •VGS VOSS (V) VGSS (V) ID (A) PD (W) Tdi OC) |Yfi|@ VDS ■ID RDS(mi) max(Q) Id (A) VGS (V) JA VDS (V) (A) 2S JI8 8
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2SJI88
2SJ189
2SJ191
2SJ192
2SJ194
2SJ195
2SJ253
T0220
2SJ260
2SJ468
2SJ271
2SJ281
2SJ336
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