2SJ229
Abstract: No abstract text available
Text: Ordering number:EN3814 P-Channel Silicon MOSFET 2SJ229 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Its height onboard is 9.5mm. · Meets radial taping. unit:mm
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EN3814
2SJ229
2SJ229]
2SJ229
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2SJ229
Abstract: No abstract text available
Text: Ordering number : EN3814 SANYO Semiconductors DATA SHEET 2SJ229 P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Its height onboard is 9.5mm.
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EN3814
2SJ229
2SJ229]
2SJ229
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2SJ229
Abstract: ITR00123 ITR00124 ITR00125 ITR00126 ITR00127 ITR00128
Text: 注文コード No.N 3 8 1 4 2SJ229 三洋半導体データシート 2SJ229 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。
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2SJ229
800mA
800mA,
--30V
--10V
ITR00127
ITR00130
2SJ229
ITR00123
ITR00124
ITR00125
ITR00126
ITR00127
ITR00128
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2sc5203
Abstract: 2SK3615 2sk*3615 2SK1731 TIG022TS 2SJ633 2SJ646 2SK3492 2SJ636 MCH6005
Text: Ordering number : E I 0 0 2 3 Announcement Regarding Discontinuation and Limited Availability to Existing Customers of Hyper Device Products Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis.
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CPH6405
CPH6434
TIG008SS
TIG014SS
TIG002SS
TIG008TS
TIG022TS
TIG004SS
2sc5203
2SK3615
2sk*3615
2SK1731
TIG022TS
2SJ633
2SJ646
2SK3492
2SJ636
MCH6005
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2SJ229
Abstract: No abstract text available
Text: O rdering num ber: EN 3 8 1 4 _ 2SJ229 No.3814 P-Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu re s •Low ON resistance. ■Very high-speed switching. ■Low-voltage drive. • Its height onboard is 9.5mm. • Meets radial taping.
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2SJ229
atTa-25Â
2SJ229
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Untitled
Abstract: No abstract text available
Text: 2SJ229 LD L o w D rive S eries V Dss = 6 0 V 2085 P Channel Power M OSFET 3814 F e a tu re s •Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Its height onboard is 9.5mm. • M eets radial taping. A b so lu te M ax im u m R a tin g s a t Ta = 25°C
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2SJ229
31893MH
A8-7975
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TO-32-070
Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
Text: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)
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T0220ML
TO-32-070
2SA1678
FC102
2SC4449
2SA1416
2SJ193
2sk283
2sC4106 application notes
2SC3383
FC124
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2S*1206
Abstract: 2S1201 2S1204 2SJ224 2SJ214LS 2s1208 2S1209 2SJ200 2SJ214 2SJ201
Text: - 24 - « tt m £ & m m f t ? 1 * K jç. H V m * £ (V) * * P d /P c h (A) % m Í& * * (W) I gss (max) (A) Vg s (V) 0*3 (min) (max) Vd s (A) (A) (V) (Ta=25Xl) (min) (max) Vd s (V) (V) (V) Id (A) (min) (S) Vd s {\ l f (V) 1d (A) 2SJ200 LF PA MOS P E -180 DSS
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Ta-25
2SJ200
2SJ201
2SJ202
2SJ203
-200b
2SJ204
2SJ221
130ns,
490nstyp
2S*1206
2S1201
2S1204
2SJ224
2SJ214LS
2s1208
2S1209
2SJ214
2SJ201
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Untitled
Abstract: No abstract text available
Text: Power MOSFETs Electrical characteristic» T. » 31 °Q AtooMe mKknum ratings . Owto» _ - Pwtogi Appflcaflons m _ ' _ Voss » _ Voss w t# w 2SJ284* CP Very high-speed switch 30 ±15 0.3 2SJ285* CP Very high-speed switch 60 ±15 0.25 2SJ286* CP Very high-speed switch
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2SJ284*
2SJ286*
2SK1847
2SJ285*
2SJ233
2SK1731
2SK1732
2SK1734
2SK1735
DD14SSD
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2SJ468
Abstract: 2SJ191 2SJ271 2SJ260 2SJ189 2SJ192 2SJ194 2SJ195 2SJ281 2SJ336
Text: Continued from previous page Electrical characteristics Ta = 25 V Absolute maximum ratings Type No. Package type Applications Rds(<w) @ Id •VGS VOSS (V) VGSS (V) ID (A) PD (W) Tdi OC) |Yfi|@ VDS ■ID RDS(mi) max(Q) Id (A) VGS (V) JA VDS (V) (A) 2S JI8 8
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2SJI88
2SJ189
2SJ191
2SJ192
2SJ194
2SJ195
2SJ253
T0220
2SJ260
2SJ468
2SJ271
2SJ281
2SJ336
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