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    2SJ200 APPLICATION Search Results

    2SJ200 APPLICATION Result Highlights (6)

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    LTC3676EUJ#TRPBF Analog Devices Pwr M Solution for Application Visit Analog Devices Buy
    LTC3676IUJ-1#PBF Analog Devices Pwr M Solution for Application Visit Analog Devices Buy
    LTC3676ELXE#PBF Analog Devices Pwr M Solution for Application Visit Analog Devices Buy
    LTC3676HUJ#PBF Analog Devices Pwr M Solution for Application Visit Analog Devices Buy
    LTC3676ILXE#PBF Analog Devices Pwr M Solution for Application Visit Analog Devices Buy
    LTC3676EUJ-1#PBF Analog Devices Pwr M Solution for Application Visit Analog Devices Buy

    2SJ200 APPLICATION Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SJ200

    Abstract: 2SK1529
    Text: 2SJ200 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = −180 V z High forward transfer admittance : |Yfs| = 4.0 S typ. z Complementary to 2SK1529 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SJ200 2SK1529 2-16C1B 2SJ200 2SK1529

    2sj200

    Abstract: 2SK1529 Toshiba 2SJ
    Text: 2SJ200 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application Unit: mm l High breakdown voltage : VDSS = −180 V l High forward transfer admittance : |Yfs| = 4.0 S typ. l Complementary to 2SK1529 Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SJ200 2SK1529 2-16C1B 2sj200 2SK1529 Toshiba 2SJ

    2SJ200

    Abstract: 2sk1529/2sj200
    Text: 2SJ200 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = −180 V High forward transfer admittance : |Yfs| = 4.0 S typ. Complementary to 2SK1529 Maximum Ratings (Tc = 25°C)


    Original     		PDF 2SJ200 2SK1529 2-16C1B 2SJ200 2sk1529/2sj200

    2SJ200

    Abstract: 2sk1529 2sj200 Toshiba 2SJ
    Text: 2SJ200 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = −180 V z High forward transfer admittance : |Yfs| = 4.0 S typ. z Complementary to 2SK1529 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SJ200 2SK1529 2-16C1B 2SJ200 2sk1529 2sj200 Toshiba 2SJ

    2SJ200

    Abstract: 2SJ20
    Text: 2SJ200 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = −180 V High forward transfer admittance : |Yfs| = 4.0 S typ. Complementary to 2SK1529 Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SJ200 2SK1529 2-16C1B 2SJ200 2SJ20

    2SJ200

    Abstract: 2SK1529 transistor application Toshiba 2SJ
    Text: 2SJ200 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = −180 V z High forward transfer admittance : |Yfs| = 4.0 S typ. z Complementary to 2SK1529 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SJ200 2SK1529 2-16C1B 2SJ200 2SK1529 transistor application Toshiba 2SJ

    K1529

    Abstract: 2SK1529 2SJ200 Toshiba 2SJ
    Text: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High-Power Amplifier Application Unit: mm High breakdown voltage : VDSS = 180V High forward transfer admittance : |Yfs| = 4.0 S typ. Complementary to 2SJ200 Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SK1529 2SJ200 K1529 K1529 2SK1529 2SJ200 Toshiba 2SJ

    Untitled

    Abstract: No abstract text available
    Text: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = 180V High forward transfer admittance : |Yfs| = 4.0 S typ. Complementary to 2SJ200 Maximum Ratings (Tc = 25°C)


    Original     		PDF 2SK1529 2SJ200 2-16C1B K1529

    k1529

    Abstract: 2SJ200 2SK1529 toshiba pb includes toshiba 2-16c1b
    Text: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 Unit: mm High-Power Amplifier Application z High breakdown voltage : VDSS = 180 V z High forward transfer admittance : |Yfs| = 4.0 S typ. z Complementary to 2SJ200 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SK1529 2SJ200 k1529 2SJ200 2SK1529 toshiba pb includes toshiba 2-16c1b

    K1529

    Abstract: 2sk1529 2sj200 2SJ200 2SK1529 Toshiba 2SJ
    Text: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = 180V High forward transfer admittance : |Yfs| = 4.0 S typ. Complementary to 2SJ200 Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SK1529 2SJ200 K1529 K1529 2sk1529 2sj200 2SJ200 2SK1529 Toshiba 2SJ

    2SK1529

    Abstract: K1529 2SJ200
    Text: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = 180V z High forward transfer admittance : |Yfs| = 4.0 S typ. z Complementary to 2SJ200 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SK1529 2SJ200 2SK1529 K1529 2SJ200

    2SK1529

    Abstract: Toshiba 2SJ
    Text: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = 180V z High forward transfer admittance : |Yfs| = 4.0 S typ. z Complementary to 2SJ200 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SK1529 2SJ200 2SK1529 Toshiba 2SJ

    2SK1529

    Abstract: 2SJ200 K1529 SC-65 toshiba pb includes toshiba 2-16c1b
    Text: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 Unit: mm High-Power Amplifier Application z High breakdown voltage : VDSS = 180 V z High forward transfer admittance : |Yfs| = 4.0 S typ. z Complementary to 2SJ200 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SK1529 2SJ200 2SK1529 2SJ200 K1529 SC-65 toshiba pb includes toshiba 2-16c1b

    K1529

    Abstract: 2SJ200 2SK1529 Toshiba 2SJ 2sk1529 2sj200
    Text: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High Power Amplifier Application Unit: mm l High breakdown voltage : VDSS = 180V l High forward transfer admittance : |Yfs| = 4.0 S typ. l Complementary to 2SJ200 Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SK1529 2SJ200 K1529 K1529 2SJ200 2SK1529 Toshiba 2SJ 2sk1529 2sj200

    TRANSISTOR bH-10

    Abstract: marking BH-10 2SJ200 2SK1529 SC-65
    Text: TO S H IB A 2SJ200 TO SHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ200 HIGH POWER AMPLIFIER APPLICATION U nit in mm 1 5 .9 M A X . • High Breakdown Voltage • High Forward Transfer Admittance : |Yfs|= 4 .0 S Typ. • Complementary to 2SK1529


    OCR Scan     		PDF 2SJ200 2SK1529 SC-65 2-16C1B TRANSISTOR bH-10 marking BH-10

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ200 TO S H IB A FIELD EFFECT TRANSISTOR SILICON P CHANN EL MOS TYPE 2SJ200 Unit in mm HIGH POWER AMPLIFIER APPLICATION • • • 1 5 .9 M A X . High Breakdown Voltage : V j gg= —180V High Forward Transfer Admittance : |Yfs| = 4.0S Typ.) Complementary to 2SK1529


    OCR Scan     		PDF 2SJ200 --180V 2SK1529

    toshiba j200

    Abstract: 2SJ200 2SK1529 SC-65
    Text: TOSHIBA 2SJ200 SILICON P CHANNEL MOS TYPE 2SJ200 Unit in mm HIGH PO W ER AM PLIFIER APPLICATION 1 5.9 M A X. 03.2 ±0.2 X / O — , I- |l| r Is 2.° * M A X IM U M RATINGS Ta = 25°C SYMBOL CHARACTERISTIC Drain-Souree Voltage vd ss Gate-Souree Voltage vg ss


    OCR Scan     		PDF 2SJ200 2SK1529 toshiba j200 2SJ200 SC-65

    2SK1118

    Abstract: 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220
    Text: Power MOS FET tc-MOS Application Type No. N-CHANNEL P-CHANNEL 2SJ200 2SJ201 Audio Power Amp. 2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 DC/DC Converter 2SK387 Motor Driver 2SK3B8 2SK572 2SK578 2SK573 2SK447 2SK1641 2SK945 2SK528 2SK529 2SK530 2SK531


    OCR Scan     		PDF 2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 2SK387 2SK572 2SK578 2SK1118 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK1529 SILICON N CHANNEL MOS TYPE High Breakdown Voltage : Vj3gg = 180V High Forward Transfer Admittance : |Yfs| = 4.0S Typ. Complementary to 2SJ200 1 5 .9 M A X . 3.3MAX. . , 2.0 • • • INDUSTRIAL APPLICATIONS Unit in mm M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SK1529 2SJ200

    c 111 transistor

    Abstract: No abstract text available
    Text: TOSHIBA FIELD EFFECT TRANSISTOR 2SK1529 SILICON N CHANNEL MOS TYPE HIGH POWER AMPLIFIER APPLICATION Unit in mm 15.9MAX . High Breakdown Voltage 03.2±O.2 : Vj ss“180V MIN.) 7 . High Forward Transfer Admittance : | Yfs | “4.OS (TYP.) . Complementary to 2SJ200


    OCR Scan     		PDF 2SK1529 2SJ200 Ta-25 Tcm25 SC-65 2-16C1B c 111 transistor

    2SJ200

    Abstract: 6C1B
    Text: I 2SJ200 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE HIGH POWER AMPLIFIER APPLICATION Unit in mm . High Breakdown Voltage X5.9MAX 03.2 ±0.2 : V jjss “"180V MIN. . High Forward Transfer Admittance : | Yfs | “4.OS (TYP.) r . . Complementary to 2SK1529


    OCR Scan     		PDF 2SJ200 2SK1529 2SJ200 6C1B

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA Discrete Semiconductors 2SJ200 Field Effect Transistor 2 Silicon P Channel M O ST ype L -ti-MOS IV High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance


    OCR Scan     		PDF 2SJ200

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SJ200 Field Effect Transistor Silicon P Channel MOS Type rc-MOS II Audio Frequency Power Amplifier Application Features • High Breakdown Voltage - VDSS = -180V (Min.) • High Forward Transfer Admittance - Y fs ' = 4 . O S (T y p .) • Complementary to 2SK1529


    OCR Scan     		PDF 2SJ200 -180V 2SK1529

    toshiba j200

    Abstract: No abstract text available
    Text: T O SH IB A 2SJ200 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2 SJ 2QQ Unit in mm HIGH POWER AMPLIFIER APPLICATION 1 5.9 MAX. High Breakdown Voltage : V j}ss= —180V High Forward Transfer Admittance : |Yfg| = 4.0S Typ. Complementary to 2SK1529


    OCR Scan     		PDF 2SJ200 toshiba j200