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UAA 1008 Abstract: No abstract text available Text: CRTRLYST s e H i c o N o u c T o n 2231 CALLE DE LUNA SANTA CLARA, CA 9S0S4 Ttbphon»: 408 748-7700 Fax: (408) 980-8209 CAT28F512V5 512K (64K x 8) CMOS FLASH MEMORY DESCRIPTION FEATURES The CAT28F512V5 Rash memory is a high speed 64K x 8-bit electrically erasable and reprogram	OCR Scan	PDF	CAT28F512V5 CAT28F512V5 UAA 1008
28F512 Abstract: 28F512 input id intel 28f512 80C186 N28F512 P28F512 80C186 programming Text: in te i 28F512 512K 64K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jus Typical Byte-Program — 1 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % Vpp H igh-Perform ance Read	OCR Scan	PDF	28F512 28F512-120 ER-20, ER-24, RR-60, AP-316, AP-325 TP28F512-120, TN28F512-120 28F512 28F512 input id intel 28f512 80C186 N28F512 P28F512 80C186 programming
2SF512 Abstract: No abstract text available Text: 28F512 D Q q -D Q 7 E R A S E V O LTAG E IN P U T / O U T P U T SW ITC H BUFFERS TO A R R A Y SO U R C E ST A T E C O N TR O L COMMAND R E G IST ER IN T EG R A T ED STO P T IM ER u PGM V O LTAG E SW ITC H C H IP E N A B L E O U T PU T E N A B L E CE# • DAT A	OCR Scan	PDF	28F512 28F512 P28F512 P28F512-120 P28F512-150 N28F512-120 N28F512-150 TP28F512-120 TN28F512-120 2SF512
AP28F512-120 Abstract: AP28F512 AN28F512-120 28F512 AP28F512-150 AN28F512 INTEL FLASH AP-316 ap-325 intel 28f512 irs2092 Text: In te l A28F512 512K 64K x 8 CMOS FLASH MEMORY (Automotive) • Extended Autom otive Tem perature Range: - ¥ T C to + 12S*C ■ Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Qulck-Pulse Programming Algorithm — 10 n9 Typical Byte-Program	OCR Scan	PDF	A28F512 32-PIN 32-LEAD -H250C AP28F512-150 AN28F512-150 AP28F512-120 AN28F512-120 ER-20, AP28F512 AN28F512-120 28F512 AN28F512 INTEL FLASH AP-316 ap-325 intel 28f512 irs2092