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    2SD880, 1.5 POWER DISSIPATION Search Results

    2SD880, 1.5 POWER DISSIPATION Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
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    2SD880, 1.5 POWER DISSIPATION Price and Stock

    Rectron Semiconductor 2N4403

    Transistor - BJT - PNP - DC Collector Current 0.6A - Power Dissipation 600mW - 3 Pin - TO 92 package - Collector emitter voltage - 40V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 2N4403 23,212
    • 1 -
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    • 1000 $0.0313
    • 10000 $0.0169
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    Microchip Technology Inc VN2210N3

    MOSFET - N-Channel - 100V Vdss - 1.2A - 350mOhm @ 4A, 10V Rds On (Max) @ Id, Vgs - ±20V Vgs - 740mW Power Dissipation - TO-92-3.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com VN2210N3 8,530
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    • 100 $0.811
    • 1000 $0.811
    • 10000 $0.811
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    Rectron Semiconductor 2N4401

    Transistor - BJT - NPN - DC Collector Current 0.6A - Power Dissipation 600mW - 3 Pin - TO 92 package - Collector emitter voltage 40V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 2N4401 7,493
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    • 1000 $0.0624
    • 10000 $0.047
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    General Transistor Corp IRF840

    MOSFET - N-Channel – Vdss 500V – Id 8A - Drive voltage 10 V – Vgs 4 V - Power dissipation 125 W –TO 220AB - Through hole - 3 pins
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com IRF840 1,778
    • 1 $11.55
    • 10 $6.67
    • 100 $2.08
    • 1000 $2.08
    • 10000 $2.08
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    Microchip Technology Inc VP0106N3

    MOSFET - P-Channel - 60V Vdss - 250mA - 8Ohm @ 500mA, 10V Rds On (Max) @ Id, Vgs - ±20V Vgs - 1W Power Dissipation - TO-92-3.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com VP0106N3 1,266
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    • 100 $0.348
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    Find more 2SD880, 1.5 POWER DISSIPATION price and stock on Findchips.com

    2SD880, 1.5 POWER DISSIPATION Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SD880

    Abstract: 2sD880 TRANSISTOR 2sd880 equivalent
    Text: 2SD880 2SD880 TRANSISTOR NPN TO—220 FEATURES Power dissipation PCM: 1. BASE 2. COLLECTOR 3. EMITTER 1.5 W (Tamb=25℃) Collector current ICM: 3 A Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range 123 TJ, Tstg: -55℃ to +150℃


    Original     		PDF 2SD880 O--220 500mA 300mA 2SD880 2sD880 TRANSISTOR 2sd880 equivalent

    2SD880

    Abstract: 2sd880 equivalent
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD880 TRANSISTOR NPN TO—220 1. BASE FEATURES Power dissipation PCM: 2. COLLECTOR 3. EMITTER 1.5 W (Tamb=25℃) Collector current 3 A ICM: Collector-base voltage


    Original     		PDF O-220 2SD880 O--220 500mA 300mA 2SD880 2sd880 equivalent

    Untitled

    Abstract: No abstract text available
    Text: TO-220 Plastic-Encapsulate Transistors 2SD880 TRANSISTOR NPN TO—220 1. BASE FEATURES Power dissipation PCM: 2. COLLECTOR 3. EMITTER 1.5 W (Tamb=25℃) Collector current 3 A ICM: Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range


    Original     		PDF O-220 2SD880 500mA 300mA

    Untitled

    Abstract: No abstract text available
    Text: 2SD880 Plastic-Encapsulate Transistors NPN TO—220 Features Power dissipation PCM: 1.5 W Tamb=25℃ Collector current ICM: 3 A Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 1. BASE 2. COLLECTOR 3. EMITTER


    Original     		PDF 2SD880 500mA 300mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD880 TRANSISTOR（ NPN ） TO—220 FEATURES Power dissipation PCM : 1.5 W（Tamb=25℃） Collector current ICM : 3A Collector-base voltage V BR CBO : 60 V Operating and storage junction temperature range


    Original     		PDF O-220 2SD880 100TYP 540TYP

    2SD880

    Abstract: No abstract text available
    Text: Transys Electronics L I M I T E D TO-220 Plastic-Encapsulated Transistors 2SD880 TRANSISTOR NPN TO—220 1. BASE FEATURES Power dissipation PCM: 2. COLLECTOR 3. EMITTER 1.5 W (Tamb=25℃) Collector current 3 A ICM: Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range


    Original     		PDF O-220 2SD880 O--220 500mA 300mA 2SD880

    2sd880

    Abstract: 2SD880L utc 2SD880L 2SD880, 1.5 power dissipation transistor 2sd880 013 transistor
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD880 NPN SILICON TRANSISTOR NPN EPITAXIAL TRANSISTOR „ DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. „ FEATURES * High DC Current Gain: hFE=200 Max. (VCE=5V, IC=0.5A) * Low Saturation Voltage: VCE(SAT)=1.0V(Max.)(IC=3A, IB=0.3A)


    Original     		PDF 2SD880 2SD880 2SB834 2SD880L-TA3-T 2SD880G-TA3-T O-220 QW-R203-013 2SD880L utc 2SD880L 2SD880, 1.5 power dissipation transistor 2sd880 013 transistor

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD 2SD880 NPN SILICON TRANSISTOR N PN EPI T AX I AL T RAN SI ST OR ̈ DESCRI PT I ON The UTC 2SD880 is designed for audio frequency power amplifier applications. ̈ FEAT U RES * High DC Current Gain: hFE=200 Max. (VCE=5V, IC=0.5A)


    Original     		PDF 2SD880 2SD880 2SB834 2SD880L-TA3-T 2SD880G-TA3-T O-220 QW-R203-013

    2SD880

    Abstract: 2sD880 TRANSISTOR 2SD880L
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD880 NPN SILICON TRANSISTOR NPN EPITAXIAL TRANSISTOR  DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications.  FEATURES * High DC Current Gain: hFE=200 Max. (VCE=5V, IC=0.5A) * Low Saturation Voltage: VCE(SAT)=1.0V(Max.)(IC=3A, IB=0.3A)


    Original     		PDF 2SD880 2SD880 2SB834 2SD880G-AB3-R 2SD880L-TA3-T 2SD880G-TA3-T OT-89 O-220 2sD880 TRANSISTOR 2SD880L

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SD880 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. FEATURE *High DC Current Gain: hFE=300 Max. (VCE=5V,IC=0.5A) *Low Saturation Voltage: VCE(sat)=1.0V(Max.)(IC=3A,IB=0.3A)


    Original     		PDF 2SD880 2SD880 2SB834 O-220 QW-R203-013

    2SD880L

    Abstract: 2sd880 equivalent utc 2SD880L QW-R203-013 2SB834 2SD880 power transistor audio amplifier 500 watts
    Text: UTC 2SD880 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. FEATURE *High DC Current Gain: hFE=300 Max. (VCE=5V,IC=0.5A) *Low Saturation Voltage: VCE(sat)=1.0V(Max.)(IC=3A,IB=0.3A)


    Original     		PDF 2SD880 2SD880 2SB834 O-220 2SD880L QW-R203-013 2SD880L 2sd880 equivalent utc 2SD880L 2SB834 power transistor audio amplifier 500 watts

    2SD880

    Abstract: No abstract text available
    Text: 2SD880 NPN Silicon Epitaxial Power Transistor P b Lead Pb -Free COLLECTOR 2 FEATURES: 1 BASE 1 * Low frequency power amplifier * Complement to 2SB834 2 3 1. BASE 2. COLLECTOR 3. EMITTER 3 EMITTER TO-220 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol


    Original     		PDF 2SD880 2SB834 O-220 02-Feb-07 O-220 2SD880

    2sd880 equivalent

    Abstract: 2SD880, 1.5 power dissipation 2SB834 2SD880 2sD880 TRANSISTOR
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD880 TRANSISTOR NPN TO-220 FEATURES z Low frequency power amplifier z Complement to 2SB834 1. BASE 2. COLLECTOR 3. EMITTER 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF O-220 2SD880 O-220 2SB834 500mA 300mA 2sd880 equivalent 2SD880, 1.5 power dissipation 2SB834 2SD880 2sD880 TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD880 TRANSISTOR NPN TO-220 FEATURES z Low frequency power amplifier z Complement to 2SB834 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF O-220 2SD880 O-220 2SB834 500mA 300mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD880 TRANSISTOR NPN TO-220 FEATURES z Low Frequency Power Amplifier z Complement to 2SB834 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF O-220 2SD880 O-220 2SB834 500mA 300mA

    2sD880 TRANSISTOR

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components 2SD880 Features • • NPN Silicon Power Transistors With TO-220 package Power amplifier applications Maximum Ratings


    Original     		PDF 2SD880 O-220 O-220 50mAdc, 100uAdc, Volta---100 2sD880 TRANSISTOR

    2SB834

    Abstract: 2SD880
    Text: SavantIC Semiconductor Product Specification 2SB834 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Low collector saturation voltage ·Complement to type 2SD880 APPLICATIONS ·Audio frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter


    Original     		PDF 2SB834 O-220 2SD880 2SB834 2SD880

    2SB834

    Abstract: 2SD880
    Text: JMnic Product Specification 2SB834 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Low collector saturation voltage ・Complement to type 2SD880 APPLICATIONS ・Audio frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to


    Original     		PDF 2SB834 O-220 2SD880 2SB834 2SD880

    2sb834 transistor

    Abstract: No abstract text available
    Text: 2SB834 PNP TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 1 Features 2 3. EMITTER 3 — Low Collector -emitter saturation voltage VCE(sat)=1.0v(Max)@ IC=-3A,IB=-0.3A — DC current Gain hFE =60-200@ IC=0.5A — Complementary to NPN 2SD880 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF 2SB834 O-220 O-220 2SD880 -50mA -500mA -500mA, 2sb834 transistor

    2SD880

    Abstract: R897
    Text: 2SD880 SILICON NPN TRIPLE DIFFUSED TYPE AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. FEATURES Unit in mm : . High DC Current Gain : h F E _3°0 Max. (Vc E “5V, Ic”0.5A) . Low Saturation Voltage : VC E (s a t )-1.0V(Max.)(IC“3A, IB=0.3A) . High Power Dissipation


    OCR Scan     		PDF 2SD880 2SB834. 50x50xlm 2SD880 R897

    2SD880

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD880 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. Unit in mm FEATURES : . High DC Current Gain : b p E = 3 0 0 M a x . (VCE=5V, IC=0.5A) 10.3M A X ¡z ¡5 6 ± 0 .a . Low Saturation Voltage : VCE(sat)=1.0V(Max.)(IC=3A, IB=0.3A)


    OCR Scan     		PDF 2SD880 2SB834. 50X50xlmmA^ 2SD880

    2SB834

    Abstract: No abstract text available
    Text: SILICON PNP TRIPLE DIFFUSED TYPE 2SB834 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. FEATURES: • Low Collector Saturation Voltage : VcE sat =-l-OV(Max.) at Ic=-3A, Ib =-0.3A . Collector Power Dissipation : PC=30W (Tc=25°C) . Complementary to 2SD880. MAXIMUM RATINGS (Ta=25°C)


    OCR Scan     		PDF 2SB834 2SD880. -50mA, 20/taec 100v200 2SB834

    2SD880

    Abstract: 2SB834 2SD880, 1.5 power dissipation 2s0880 AC75 2SD880 TOSHIBA 2SB834 TOSHIBA
    Text: TOSHIBA {DISCRETE/OPTO! ~SÍ H 90 97250 TO SHI BA DE I H H ÌDT7SSG H H tJöC 07 84-4- <DI SC RE TE/OPTO □□07Ö44 H H H L) 7<- 3 3 ^ 0 ? 2SD880 SIL IC O N NPN T R IP L E D IF F U SE D TYPE_ AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. Unit in mm


    OCR Scan     		PDF 07fl44 2SD880 2SB834. B00X300X3mmAi 200x2mm 100x100 50X50ximmAÂ 50x50ximm 2SD880 2SB834 2SD880, 1.5 power dissipation 2s0880 AC75 2SD880 TOSHIBA 2SB834 TOSHIBA

    2SB834 TOSHIBA

    Abstract: No abstract text available
    Text: -2SB834 SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS A U D IO FR EQ U EN C Y PO W ER A M PLIFIER APPLIC ATIO N S. Unit in mm 0 3 .6 ÍQ .Z • Low Collector Saturation Voltage : v CE(sat)= —1-OV(Max.)at I c = -3 A , ¡3 = -0.3A Collector Power Dissipation


    OCR Scan     		PDF -2SB834 2SD880. 300x300x2m 200X200X 2SB834 TOSHIBA