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    2SD880, 1.5 POWER DISSIPATION Search Results

    2SD880, 1.5 POWER DISSIPATION Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
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    2SD880, 1.5 POWER DISSIPATION Price and Stock

    Rectron Semiconductor 2N4403

    Transistor - BJT - PNP - DC Collector Current 0.6A - Power Dissipation 600mW - 3 Pin - TO 92 package - Collector emitter voltage - 40V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 2N4403 22,382
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.0313
    • 10000 $0.0169
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    Microchip Technology Inc VN2210N3

    MOSFET - N-Channel - 100V Vdss - 1.2A - 350mOhm @ 4A, 10V Rds On (Max) @ Id, Vgs - ±20V Vgs - 740mW Power Dissipation - TO-92-3.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com VN2210N3 8,430
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    • 10 -
    • 100 $0.811
    • 1000 $0.811
    • 10000 $0.811
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    Rectron Semiconductor 2N4401

    Transistor - BJT - NPN - DC Collector Current 0.6A - Power Dissipation 600mW - 3 Pin - TO 92 package - Collector emitter voltage 40V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 2N4401 6,491
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    • 1000 $0.0615
    • 10000 $0.0464
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    Microchip Technology Inc DN2540N5-G

    MOSFET Housing type: TO-220 Polarity: N Variants: Depletion mode Power dissipation: 15 W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com DN2540N5-G 800
    • 1 -
    • 10 -
    • 100 $1.14
    • 1000 $1.09
    • 10000 $1.05
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    Microchip Technology Inc TN0604WG

    MOSFET - 4 Channel - 40 Vds - 4A Id - 1 Ohms Rds On - -20V/+20V Vgs - 1.5W Power Dissipation - TO-92-3 - Through Hole.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com TN0604WG 494
    • 1 -
    • 10 $2.4
    • 100 $2.16
    • 1000 $2.16
    • 10000 $2.16
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    Find more 2SD880, 1.5 POWER DISSIPATION price and stock on Findchips.com

    2SD880, 1.5 POWER DISSIPATION Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SD880

    Abstract: 2sd880 equivalent
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD880 TRANSISTOR NPN TO—220 1. BASE FEATURES Power dissipation PCM: 2. COLLECTOR 3. EMITTER 1.5 W (Tamb=25℃) Collector current 3 A ICM: Collector-base voltage


    Original     		O-220 2SD880 O--220 500mA 300mA 2SD880 2sd880 equivalent PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SD880 Plastic-Encapsulate Transistors NPN TO—220 Features Power dissipation PCM: 1.5 W Tamb=25℃ Collector current ICM: 3 A Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 1. BASE 2. COLLECTOR 3. EMITTER


    Original     		2SD880 500mA 300mA PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD880 TRANSISTOR（ NPN ） TO—220 FEATURES Power dissipation PCM : 1.5 W（Tamb=25℃） Collector current ICM : 3A Collector-base voltage V BR CBO : 60 V Operating and storage junction temperature range


    Original     		O-220 2SD880 100TYP 540TYP PDF

    2sd880

    Abstract: 2SD880L utc 2SD880L 2SD880, 1.5 power dissipation transistor 2sd880 013 transistor
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD880 NPN SILICON TRANSISTOR NPN EPITAXIAL TRANSISTOR „ DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. „ FEATURES * High DC Current Gain: hFE=200 Max. (VCE=5V, IC=0.5A) * Low Saturation Voltage: VCE(SAT)=1.0V(Max.)(IC=3A, IB=0.3A)


    Original     		2SD880 2SD880 2SB834 2SD880L-TA3-T 2SD880G-TA3-T O-220 QW-R203-013 2SD880L utc 2SD880L 2SD880, 1.5 power dissipation transistor 2sd880 013 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SD880 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. FEATURE *High DC Current Gain: hFE=300 Max. (VCE=5V,IC=0.5A) *Low Saturation Voltage: VCE(sat)=1.0V(Max.)(IC=3A,IB=0.3A)


    Original     		2SD880 2SD880 2SB834 O-220 QW-R203-013 PDF

    2SD880

    Abstract: No abstract text available
    Text: 2SD880 NPN Silicon Epitaxial Power Transistor P b Lead Pb -Free COLLECTOR 2 FEATURES: 1 BASE 1 * Low frequency power amplifier * Complement to 2SB834 2 3 1. BASE 2. COLLECTOR 3. EMITTER 3 EMITTER TO-220 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol


    Original     		2SD880 2SB834 O-220 02-Feb-07 O-220 2SD880 PDF

    2sd880 equivalent

    Abstract: 2SD880, 1.5 power dissipation 2SB834 2SD880 2sD880 TRANSISTOR
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD880 TRANSISTOR NPN TO-220 FEATURES z Low frequency power amplifier z Complement to 2SB834 1. BASE 2. COLLECTOR 3. EMITTER 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		O-220 2SD880 O-220 2SB834 500mA 300mA 2sd880 equivalent 2SD880, 1.5 power dissipation 2SB834 2SD880 2sD880 TRANSISTOR PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD880 TRANSISTOR NPN TO-220 FEATURES z Low frequency power amplifier z Complement to 2SB834 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		O-220 2SD880 O-220 2SB834 500mA 300mA PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD880 TRANSISTOR NPN TO-220 FEATURES z Low Frequency Power Amplifier z Complement to 2SB834 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		O-220 2SD880 O-220 2SB834 500mA 300mA PDF

    2sD880 TRANSISTOR

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components 2SD880 Features • • NPN Silicon Power Transistors With TO-220 package Power amplifier applications Maximum Ratings


    Original     		2SD880 O-220 O-220 50mAdc, 100uAdc, Volta---100 2sD880 TRANSISTOR PDF

    2SB834

    Abstract: 2SD880
    Text: SavantIC Semiconductor Product Specification 2SB834 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Low collector saturation voltage ·Complement to type 2SD880 APPLICATIONS ·Audio frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter


    Original     		2SB834 O-220 2SD880 2SB834 2SD880 PDF

    2SB834

    Abstract: 2SD880
    Text: JMnic Product Specification 2SB834 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Low collector saturation voltage ・Complement to type 2SD880 APPLICATIONS ・Audio frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to


    Original     		2SB834 O-220 2SD880 2SB834 2SD880 PDF

    2sd880 equivalent

    Abstract: 2SD880, 1.5 power dissipation 2SD880 2sD880 TRANSISTOR
    Text: DC COMPONENTS CO., LTD. 2SD880 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for low frequency power amplifier applications. TO-220AB Pinning 1 = Base 2 = Collector 3 = Emitter .405 10.28 .380(9.66)


    Original     		2SD880 O-220AB 2sd880 equivalent 2SD880, 1.5 power dissipation 2SD880 2sD880 TRANSISTOR PDF

    2SB834

    Abstract: 2sb834 transistor 2SD880 2sD880 TRANSISTOR
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SB834 TRANSISTOR PNP TO—220 1. BASE FEATURES z Low Collector -emitter saturation voltage VCE(sat)=1.0v(Max)@ IC=-3A,IB=-0.3A z DC current Gain hFE =60-200@ IC=0.5A


    Original     		O-220 2SB834 O--220 2SD880 -500mA -500mA, 2SB834 2sb834 transistor 2SD880 2sD880 TRANSISTOR PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SB834 TRANSISTOR PNP TO—220 1. BASE FEATURES z Low Collector -emitter saturation voltage VCE(sat)=1.0v(Max)@ IC=-3A,IB=-0.3A z DC current Gain hFE =60-200@ IC=0.5A


    Original     		O-220 2SB834 2SD880 -500mA -500mA, PDF

    2SB834

    Abstract: 2sb834 equivalent 2sd880 equivalent 2SD880
    Text: Inchange Semiconductor Product Specification 2SB834 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Low collector saturation voltage ・Complement to type 2SD880 APPLICATIONS ・Audio frequency power amplifier PINNING PIN DESCRIPTION 1


    Original     		2SB834 O-220 2SD880 2SB834 2sb834 equivalent 2sd880 equivalent 2SD880 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components 2SD880 Features • • • NPN Silicon Power Transistors With TO-220 package Power amplifier applications


    Original     		2SD880 O-220 O-220 50mAdc, PDF

    2SD880Y

    Abstract: 2sD880 TRANSISTOR 2SD880 2SD880-G
    Text: MCC 2SD880 2SD880-Q 2SD880-Y 2SD880-GR   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • With TO-220 package Power amplifier applications x Case Material: Molded Plastic.


    Original     		2SD880 2SD880-Q 2SD880-Y 2SD880-GR O-220 O-220 2SD880Y 2sD880 TRANSISTOR 2SD880-G PDF

    2sd880y

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 2SD880 2SD880-Q 2SD880-Y 2SD880-GR   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • Lead Free Finish/RoHS Compliant Note 1 ("P" Suffix designates


    Original     		2SD880 2SD880-Q 2SD880-Y 2SD880-GR O-220 2sd880y PDF

    2SD880

    Abstract: R897
    Text: 2SD880 SILICON NPN TRIPLE DIFFUSED TYPE AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. FEATURES Unit in mm : . High DC Current Gain : h F E _3°0 Max. (Vc E “5V, Ic”0.5A) . Low Saturation Voltage : VC E (s a t )-1.0V(Max.)(IC“3A, IB=0.3A) . High Power Dissipation


    OCR Scan     		2SD880 2SB834. 50x50xlm 2SD880 R897 PDF

    2SD880

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD880 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. Unit in mm FEATURES : . High DC Current Gain : b p E = 3 0 0 M a x . (VCE=5V, IC=0.5A) 10.3M A X ¡z ¡5 6 ± 0 .a . Low Saturation Voltage : VCE(sat)=1.0V(Max.)(IC=3A, IB=0.3A)


    OCR Scan     		2SD880 2SB834. 50X50xlmmA^ 2SD880 PDF

    2SB834

    Abstract: No abstract text available
    Text: SILICON PNP TRIPLE DIFFUSED TYPE 2SB834 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. FEATURES: • Low Collector Saturation Voltage : VcE sat =-l-OV(Max.) at Ic=-3A, Ib =-0.3A . Collector Power Dissipation : PC=30W (Tc=25°C) . Complementary to 2SD880. MAXIMUM RATINGS (Ta=25°C)


    OCR Scan     		2SB834 2SD880. -50mA, 20/taec 100v200 2SB834 PDF

    2SB834 TOSHIBA

    Abstract: No abstract text available
    Text: -2SB834 SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS A U D IO FR EQ U EN C Y PO W ER A M PLIFIER APPLIC ATIO N S. Unit in mm 0 3 .6 ÍQ .Z • Low Collector Saturation Voltage : v CE(sat)= —1-OV(Max.)at I c = -3 A , ¡3 = -0.3A Collector Power Dissipation


    OCR Scan     		-2SB834 2SD880. 300x300x2m 200X200X 2SB834 TOSHIBA PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA DE | SOTTESO □□□ 7 fl44 Sb "S'faC <DISCRETE/OPTO U 7 - 3 3 Ü7Ö4¥ 2SD880 SILICO N NPN T R IP L E D IFFU S E D TYPE_ AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. Unit in mm FEATURES : . High DC Current Gain


    OCR Scan     		2SD880 C13MAX. 2SB834. PDF