2SD718 2SB688 AMPLIFIER SCHEMATIC Search Results

2SD718 2SB688 AMPLIFIER SCHEMATIC Result Highlights (6)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TC75S102F		Toshiba Electronic Devices & Storage Corporation	Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25
OP07-W		Texas Instruments	Precision Operational Amplifier 0-WAFERSALE
LM118 MW8		Texas Instruments	Operational Amplifier 0-WAFERSALE -55 to 125
LM2904LVQDRQ1		Texas Instruments	Industry standard, low voltage, automotive operational amplifier
LM124AWRLQMLV/SD		Texas Instruments	Low Power Quad Operational Amplifier 14-CFCBGA
LM741C-MWC		Texas Instruments	Operational Amplifier 0-WAFERSALE -40 to 85

2SD718 2SB688 AMPLIFIER SCHEMATIC Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
BU108 Abstract: TRANSISTOR REPLACEMENT GUIDE BD676 BD676A application note BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD676 BD676A BD678 BD678A BD680 BD680A BD682 Plastic Medium-Power Silicon PNP Darlingtons . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 Min @ IC = 1.5 and 2.0 Adc	Original	PDF	BD676, BD675, BD676 BD676A BD678 BD678A BD680 BD680A BD682 TIP73B BU108 TRANSISTOR REPLACEMENT GUIDE BD676 BD676A application note BU326 BU100
2SA1046 Abstract: BU108 TRANSISTOR BC 239 c BU326 BU100 mje15033 replacement Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6387 2N6388* Plastic Medium-Power Silicon Transistors *Motorola Preferred Device . . . designed for general–purpose amplifier and low–speed switching applications. DARLINGTON 8 AND 10 AMPERE NPN SILICON POWER TRANSISTORS	Original	PDF	2N6387 2N6388 2N6387, 220AB 2N6388* TIP73B TIP74 TIP74A 2SA1046 BU108 TRANSISTOR BC 239 c BU326 BU100 mje15033 replacement
bd775 Abstract: 2SC7 BD779 Diode BAY 61 bd776 MDS20 BD776-778-780 BUX98A AMPLIFIER 2SD718 2sb688 schematic MJW16010 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BD777 PNP BD776 BD778 BD780 * Plastic Darlington Complementary Silicon Power Transistors . . . designed for general purpose amplifier and high–speed switching applications. • High DC Current Gain hFE = 1400 Typ @ IC = 2.0 Adc	Original	PDF	BD776 BD777, BD780 BD777 BD778 TIP73B TIP74 TIP74A bd775 2SC7 BD779 Diode BAY 61 MDS20 BD776-778-780 BUX98A AMPLIFIER 2SD718 2sb688 schematic MJW16010
2SD669 equivalent Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc	Original	PDF	2N6609 2N3773) 2N6667 2N6668 220AB 2N6387, 2N6388 2SD669 equivalent BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
mj11015 equivalent Abstract: MJ11016 equivalent 2SC1096 equivalent nsd15 MJ3237 BU108 BD875 equivalent MJ4502 EQUIVALENT 2SD718 2sb688 amplifier schematic SDN6000 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 1000 Min @ IC – 20 Adc • Monolithic Construction with Built–in Base Emitter Shunt Resistor	Original	PDF	TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 2N6490 mj11015 equivalent MJ11016 equivalent 2SC1096 equivalent nsd15 MJ3237 BU108 BD875 equivalent MJ4502 EQUIVALENT 2SD718 2sb688 amplifier schematic SDN6000
bdx54c equivalent Abstract: BOX 53C darlington power transistor tip122 D-PAK package All similar transistor 2sa715 BDX53C MOTOROLA BU108 transistor tip31 AMPLIFIER 2SD718 2sb688 schematic BDX54 2N386 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors NPN BDX53B BDX53C PNP . . . designed for general–purpose amplifier and low–speed switching applications. BDX54B • High DC Current Gain — hFE = 2500 Typ @ IC = 4.0 Adc	Original	PDF	BDX53B, BDX53C, 220AB BDX53B BDX53C BDX54B BDX54C TIP73B TIP74 TIP74A bdx54c equivalent BOX 53C darlington power transistor tip122 D-PAK package All similar transistor 2sa715 BDX53C MOTOROLA BU108 transistor tip31 AMPLIFIER 2SD718 2sb688 schematic BDX54 2N386
MJ3001 equivalent Abstract: MJ3000 equivalent 2sc1096 equivalent BU108 MJ3000 circuit MJ2955 2n3055 200 watts amplifier BDX54 MJ2501 MJ2955 replacement 2n3055 replacement Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ2955 See 2N3055 MJ2955A (See 2N3055A) Medium-Power Complementary Silicon Transistors MJ2500 . . . for use as output devices in complementary general purpose amplifier applications. MJ2501* • High DC Current Gain — hFE = 4000 (Typ) @ IC = 5.0 Adc	Original	PDF	MJ2955 2N3055) MJ2955A 2N3055A) MJ2500 MJ2501* MJ3000 MJ3001* TIP73B TIP74 MJ3001 equivalent MJ3000 equivalent 2sc1096 equivalent BU108 MJ3000 circuit MJ2955 2n3055 200 watts amplifier BDX54 MJ2501 MJ2955 replacement 2n3055 replacement
TIP142 TRANSISTOR REPLACEMENT Abstract: replacement for TIP147 high end amplifier schematics 2n3055 pin configuration NPN transistor tip41c BDW51C schematics TIP142 TIP147 BD262 DARLINGTON 2N6022 BU108 transistor tip142 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP140 TIP141* TIP142* PNP TIP145 TIP146* TIP147* Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V	Original	PDF	TIP140, TIP145 TIP141, TIP146 TIP142, TIP147 TIP73B TIP74 TIP74A TIP74B TIP142 TRANSISTOR REPLACEMENT replacement for TIP147 high end amplifier schematics 2n3055 pin configuration NPN transistor tip41c BDW51C schematics TIP142 TIP147 BD262 DARLINGTON 2N6022 BU108 transistor tip142
transistor mj11032 equivalent Abstract: transistor mj11028 equivalent MJ11032 equivalent MJ11028-29 Transistor 3296 Variable Resistor 1k ohm 2SC493 AMPLIFIER 2SD718 2sb688 schematic 2sd717 MJ11030 equivalent BU326 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 1000 Min @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc	Original	PDF	TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 2N6490 transistor mj11032 equivalent transistor mj11028 equivalent MJ11032 equivalent MJ11028-29 Transistor 3296 Variable Resistor 1k ohm 2SC493 AMPLIFIER 2SD718 2sb688 schematic 2sd717 MJ11030 equivalent BU326
2SC2246 Abstract: 2SD669 equivalent RCA1C03 BUW84 BD875 equivalent 2N6407 BU108 2N6026 2SD1178 NSD134 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low–speed switching motor control applications. • Similar to the Popular NPN 2N6282, 2N6283, 2N6284 and the PNP 2N6285,	Original	PDF	2N6282, 2N6283, 2N6284 2N6285, 2N6286, 2N6287 TIP73B TIP74 TIP74A TIP74B 2SC2246 2SD669 equivalent RCA1C03 BUW84 BD875 equivalent 2N6407 BU108 2N6026 2SD1178 NSD134
AMPLIFIER 2SD718 2sb688 schematic Abstract: MJ900 2SD718 2sb688 amplifier schematic 2SC1419 2SA94 2SA124 2SD331 2SC1116 IR403 2SC2250 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJ1000 MJ1001* Medium-Power Complementary Silicon Transistors *Motorola Preferred Device . . . for use as output devices in complementary general purpose amplifier applications. 10 AMPERE DARLINGTON POWER TRANSISTORS	Original	PDF	MJ1000 MJ1001* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C AMPLIFIER 2SD718 2sb688 schematic MJ900 2SD718 2sb688 amplifier schematic 2SC1419 2SA94 2SA124 2SD331 2SC1116 IR403 2SC2250
pin configuration NPN transistor BD679 Abstract: 2SC101 pin configuration NPN transistor BD 677 BU108 TIP120 equivalent 2SC7 2N6052 equivalent 2SC558 BDX54 2SC1943 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD675 BD675A BD677 BD677A BD679 BD679A BD681* Plastic Medium-Power Silicon NPN Darlingtons . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 Min @ IC = 1.5 and 2.0 Adc	Original	PDF	BD675, BD676, BD675 BD675A BD677 BD677A BD679 BD679A BD681* TIP73B pin configuration NPN transistor BD679 2SC101 pin configuration NPN transistor BD 677 BU108 TIP120 equivalent 2SC7 2N6052 equivalent 2SC558 BDX54 2SC1943
2Sd331 npn transistor Abstract: 724 motorola NPN Transistor with collector heat pad BU108 2SA1046 MJ15003 300 watts amplifier MOTOROLA MJD122 application note ST T4 3580 724 motorola NPN Transistor with heat pad BDX54 BU326 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD122* PNP MJD127* Complementary Darlington Power Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS	Original	PDF	2N6040 2N6045 TIP120 TIP122 TIP125 TIP127 MJD122* MJD127* TIP73B TIP74 2Sd331 npn transistor 724 motorola NPN Transistor with collector heat pad BU108 2SA1046 MJ15003 300 watts amplifier MOTOROLA MJD122 application note ST T4 3580 724 motorola NPN Transistor with heat pad BDX54 BU326
mj150* darlington mj15002 Abstract: BU108 2SA1046 bc 574 All similar transistor 2sa715 silicon npn 2SD716 transistor PNP transistor motorola mj2268 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low–frequency switching applications. • High DC Current Gain @ IC = 10 Adc — hFE = 2400 Typ — 2N6282, 2N6283, 2N6284	Original	PDF	2N6282, 2N6283, 2N6284 2N6285, 2N6286, 2N6287 2N6285 2N6286 mj150* darlington mj15002 BU108 2SA1046 bc 574 All similar transistor 2sa715 silicon npn 2SD716 transistor PNP transistor motorola mj2268 BU326 BU100