Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet 2SD2655 R07DS0281EJ0400 Rev.4.00 Jan 10, 2014 Silicon NPN Epitaxial Planer Low Frequency Power Amplifier Features • • • • • Small size package: MPAK SC–59A Large Maximum current: IC = 1 A Low collector to emitter saturation voltage: VCE(sat) = 0.3 V max.(at IC/IB = 0.5 A/0.05 A)
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2SD2655
R07DS0281EJ0400
2SB1691
PLSP0003ZB-A
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet 2SD2655 R07DS0281EJ0300 Previous: REJ03G0810-0200 Rev.3.00 Mar 28, 2011 Silicon NPN Epitaxial Planer Low Frequency Power Amplifier Features • • • • • Small size package: MPAK (SC–59A) Large Maximum current: IC = 1 A Low collector to emitter saturation voltage: VCE(sat) = 0.3 V max.(at IC/IB = 0.5 A/0.05 A)
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2SD2655
R07DS0281EJ0300
REJ03G0810-0200)
2SB1691
PLSP0003ZB-A
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2SB1691
Abstract: 2SD2655 DSA003640
Text: 2SD2655 Silicon NPN Epitaxial Planer Low Frequency Power Amplifier ADE-208-1388A Z Rev.1 Jun. 2001 Features • Small size package: MPAK (SC–59A) • Large Maximum current: IC = 1 A • Low collector to emitter saturation voltage: VCE(sat) = 0.3 V max.(at IC/IB = 0.5 A/0.05 A)
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2SD2655
ADE-208-1388A
2SB1691
2SB1691
2SD2655
DSA003640
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2SD2655WM-TL-E
Abstract: RENESAS marking code package 2SB1691 2SD2655 SC-59A RENESAS mpak marking code
Text: 2SD2655 Silicon NPN Epitaxial Planer Low Frequency Power Amplifier REJ03G0810-0200 Previous ADE-208-1388A Rev.2.00 Aug.10.2005 Features • • • • • Small size package: MPAK (SC–59A) Large Maximum current: IC = 1 A Low collector to emitter saturation voltage: VCE(sat) = 0.3 V max.(at IC/IB = 0.5 A/0.05 A)
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2SD2655
REJ03G0810-0200
ADE-208-1388A)
2SB1691
PLSP0003ZB-A
2SD2655WM-TL-E
RENESAS marking code package
2SB1691
2SD2655
SC-59A
RENESAS mpak marking code
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Renesas Electronics
Abstract: No abstract text available
Text: Preliminary Datasheet 2SD2655 R07DS0281EJ0300 Previous: REJ03G0810-0200 Rev.3.00 Mar 28, 2011 Silicon NPN Epitaxial Planer Low Frequency Power Amplifier Features • • • • • Small size package: MPAK (SC–59A) Large Maximum current: IC = 1 A Low collector to emitter saturation voltage: VCE(sat) = 0.3 V max.(at IC/IB = 0.5 A/0.05 A)
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2SD2655
R07DS0281EJ0300
REJ03G0810-0200)
2SB1691
PLSP0003ZB-A
Renesas Electronics
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2SB1691
Abstract: 2SD2655
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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2SB1691
Abstract: 2SD2655 2SD2655WM-TL-E SC-59A
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2SB1691
Abstract: 2SD2655 Hitachi DSA0076
Text: 2SB1691 Silicon PNP Epitaxial Planer Low Frequency Power Amplifier ADE-208-1387A Z Rev.1 Jun. 2001 Features • Small size package: MPAK (SC–59A) • Large Maximum current: IC = –1 A • Low collector to emitter saturation voltage: VCE(sat) = –0.3 V max.(at IC/IB = –0.5 A/–0.05 A)
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2SB1691
ADE-208-1387A
2SD2655
2SB1691
2SD2655
Hitachi DSA0076
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1002ds
Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Text: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2
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2SC5998"
C5139
2SC5247
2SC5907
2SD1504
2SJ361
2SK439
2SK494
2SK3349
BCR5KM-12L
1002ds
6020v4
TRANSISTOR BJ 131-6
2SC 8550
transistor 2sc1417
HITACHI 08122B
transistor h945
6030v4
2SC 8050
25aaj
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rjh3047
Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing
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REJ01G0001-0400
rjh3047
rjh3077
rjp3047
RJH3047DPK
rjp3049
rjp6065
rjp3053
RJP3042
smd code FX mosfet
RJP6055
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lvc16244
Abstract: BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP
Text: HITACHI ELECTRONIC COMPONENTS DATABOOK 2003 INDEX General Informations Multi Perpose Products Safety Considerations Hitachi Semiconductor Package Databook HITACHI Sales Locations Diodes Microcontroller Microcontroller General Microcontroller Overview List
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HD49323A
HA12134A
HA12141N
HA12155N
HA12163
HA12167F
HA12173
HA12179F
HA12181F
HA12187F
lvc16244
BC240
2sk3174
CBT1G125
LV2GT14A
HC32 Hitachi
HA13557A
transistor 2SC1162
H8 hitachi programming manual
30204SP
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2SC 8550
Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Text: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4
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3SK309
3SK317
3SK318
BB101C
BB102C
BB301C
BB302C
BB304C
BB305C
BB501C
2SC 8550
6020v4
6030v4
HITACHI 08122B
2SC 8050
HITACHI 08123B
transistor h945
H945
TRANSISTOR c 6030v4
2sk3545
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rjp3053
Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5
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REJ16G0001-1900
rjp3053
RJP3063
rjp6065
RJP2557
RJP3057
RJH30
RQJ0301
RJP3065
rjk5020
RJK2009
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2SB1691
Abstract: 2SD2655 FT310 2SB169
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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d-900
Unit2607
2SB1691
2SD2655
FT310
2SB169
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2SB1691
Abstract: 2SD2655
Text: 2SB1691 Silicon PNP Epitaxial Planer Low Frequency Power Amplifier REJ03G0482-0200 Previous ADE-208-1387A (Z Rev.2.00 Dec.09.2004 Features • • • • • Small size package: MPAK (SC–59A) Large Maximum current: IC = –1 A Low collector to emitter saturation voltage: VCE(sat) = –0.3 V max.(at IC/IB = –0.5 A/–0.05 A)
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2SB1691
REJ03G0482-0200
ADE-208-1387A
2SD2655
dissipati-900
Unit2607
2SB1691
2SD2655
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet 2SB1691 R07DS0272EJ0400 Rev.4.00 Jan 10, 2014 Silicon PNP Epitaxial Planer Low Frequency Power Amplifier Features • • • • • Small size package: MPAK SC–59A Large Maximum current: IC = –1 A Low collector to emitter saturation voltage: VCE(sat) = –0.3 V max.(at IC/IB = –0.5 A/–0.05 A)
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2SB1691
R07DS0272EJ0400
2SD2655
PLSP0003ZB-A
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2sb1691wl-tl-e
Abstract: No abstract text available
Text: Preliminary Datasheet 2SB1691 R07DS0272EJ0300 Previous: REJ03G0482-0200 Rev.3.00 Mar 28, 2011 Silicon PNP Epitaxial Planer Low Frequency Power Amplifier Features • Small size package: MPAK (SC–59A) Large Maximum current: IC = –1 A Low collector to emitter saturation voltage: VCE(sat) = –0.3 V max.(at IC/IB = –0.5 A/–0.05 A)
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2SB1691
R07DS0272EJ0300
REJ03G0482-0200)
2SD2655
PLSP0003ZB-A
2sb1691wl-tl-e
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