Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SD257 Search Results

    SF Impression Pixel

    2SD257 Price and Stock

    Panasonic Electronic Components 2SD25730QA

    TRANS NPN 60V 3A MT-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SD25730QA Ammo Pack
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Samtec Inc ZSTMM-110-02-S-D-257

    2.00 MM SHROUDED VARIABLE STACK
    Free Sample
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ZSTMM-110-02-S-D-257 Bulk 1
    • 1 $6.67
    • 10 $6.67
    • 100 $6.67
    • 1000 $6.67
    • 10000 $6.67
    		Buy Now
    Avnet Americas ZSTMM-110-02-S-D-257 Bulk 1
    • 1 $6.67
    • 10 $6.17
    • 100 $4.33
    • 1000 $4.33
    • 10000 $4.33
    		Buy Now
    Mouser Electronics ZSTMM-110-02-S-D-257
    • 1 $6.67
    • 10 $6.17
    • 100 $4.33
    • 1000 $3.04
    • 10000 $2.18
    		Get Quote
    Master Electronics ZSTMM-110-02-S-D-257
    • 1 -
    • 10 $8.25
    • 100 $4.93
    • 1000 $3.33
    • 10000 $2.39
    		Buy Now
    Sager ZSTMM-110-02-S-D-257 1
    • 1 $6.67
    • 10 $6.17
    • 100 $4.33
    • 1000 $3.9
    • 10000 $3.9
    		Buy Now

    SANYO Semiconductor Co Ltd 2SD2578

    POWER BIPOLAR TRANSISTOR, 8A I(C), 800V V(BR)CEO, 1-ELEMENT, NPN, SILICON, PLASTIC/EPOXY, 3 PIN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SD2578 32
    • 1 $7.5
    • 10 $3.75
    • 100 $3.75
    • 1000 $3.75
    • 10000 $3.75
    		Buy Now

    2SD257 Datasheets (42)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SD257 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SD257 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SD257 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SD257 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SD257 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD257 Unknown Scan PDF
    2SD257 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD257 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD257 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD257 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SD257 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SD257 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD257 Unknown Cross Reference Datasheet Scan PDF
    2SD257 Sanken Electric Transistor For General Purpose Scan PDF
    2SD2570 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD2571 Toshiba TRANS DARLINGTON 110V 2A 3(2-10R1A) Original PDF
    2SD2571 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD2571 Toshiba Silicon NPN triple diffused type transistor for high power switching applications, hammer drive, pulse motor drive applications Scan PDF
    2SD2571 Toshiba TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE Scan PDF
    2SD2572 Unknown Japanese Transistor Cross References (2S) Scan PDF

    2SD257 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SD2573

    Abstract: No abstract text available
    Text: Power Transistors 2SD2573 Silicon NPN triple diffusion planar type Unit: mm For high current amplification, power amplification 90˚ 0.85±0.1 1.0±0.1 0.8 C 16.0±1.0 2.5±0.1 0.65±0.1 • Absolute Maximum Ratings TC = 25°C Symbol Rating Unit Collector to base voltage


    Original     		PDF 2SD2573 2SD2573

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2573 Silicon NPN triple diffusion planar type For high current amplification, power amplification Unit: mm 0.85±0.1 1.0±0.1 0.8 C • Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 2002/95/EC) 2SD2573

    2SD2575

    Abstract: 2sd25
    Text: Transistors 2SD2575 Silicon NPN epitaxial planar type For low-frequency power amplification Unit: mm 4.0±0.2 M Di ain sc te on na tin nc ue e/ d 5.0±0.2 5.1±0.2 • Features 0.7±0.2 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l


    Original     		PDF 2SD2575 2SD2575 2sd25

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SD2575 Silicon NPN epitaxial planar type For low-frequency power amplification Unit: mm 5.0±0.2 4.0±0.2 5.1±0.2 • Features 0.7±0.2 M Di ain sc te on na tin nc ue e/ d • Low collector-emitter saturation voltage VCE sat 0.7±0.1 Symbol


    Original     		PDF 2SD2575

    2SD2576

    Abstract: 2SD2394 D310 2SD2167 D348 transistor D348
    Text: Transistors 2SD2167 2SD2394 / 2SD2576 92S-358–D310 (94L-1098-D348) 314


    Original     		PDF 2SD2167 2SD2394 2SD2576 92S-358 94L-1098-D348) 2SD2576 D310 2SD2167 D348 transistor D348

    2SD2579

    Abstract: 2SD257
    Text: SavantIC Semiconductor Product Specification 2SD2579 Silicon NPN Power Transistors DESCRIPTION •With TO-3PML package ·High speed ·High breakdown voltage ·High reliability APPLICATIONS ·Color TV horizontal deflection output PINNING PIN DESCRIPTION 1 Base


    Original     		PDF 2SD2579 2SD2579 2SD257

    2SD2573

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2573 Silicon NPN triple diffusion planar type For high current amplification, power amplification Unit: mm ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l


    Original     		PDF 2002/95/EC) 2SD2573 2SD2573

    2SD2575

    Abstract: No abstract text available
    Text: Transistor 2SD2575 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm 5.0±0.2 Low collector to emitter saturation voltage VCE sat . (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage


    Original     		PDF 2SD2575 2SD2575

    2SD2573

    Abstract: No abstract text available
    Text: Power Transistors 2SD2573 Silicon NPN triple diffusion planar type Unit: mm For high current amplification, power amplification 90˚ 0.85±0.1 1.0±0.1 0.8 C 16.0±1.0 2.5±0.1 0.65±0.1 • Absolute Maximum Ratings TC = 25°C Symbol Rating Unit Collector to base voltage


    Original     		PDF 2SD2573 2SD2573

    2SD2571

    Abstract: D2571
    Text: 2SD2571 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor 2SD2571 High Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A)


    Original     		PDF 2SD2571 2SD2571 D2571

    2SD2575

    Abstract: No abstract text available
    Text: Transistor 2SD2575 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm 5.0±0.2 Low collector to emitter saturation voltage VCE sat . (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage


    Original     		PDF 2SD2575 2SD2575

    transistor 2sd2578

    Abstract: 2sd2578 TA-1135 2SD2578 equivalent
    Text: Ordering number:5794 NPN Triple Diffused Planar Silicon Transistor 2SD2578 Color TV Horizontal Deflection Output Applications Features Package Dimensions • High speed. · High breakdown voltage VCBO=1500V . · High reliability (Adoption of HVP process).


    Original     		PDF 2SD2578 2039D 2SD2578] 80Ltd. transistor 2sd2578 2sd2578 TA-1135 2SD2578 equivalent

    TA-1136

    Abstract: 2sd2579 ta1136
    Text: Ordering number:5795 NPN Triple Diffused Planar Silicon Transistor 2SD2579 Color TV Horizontal Deflection Output Applications Features Package Dimensions • High speed. · High breakdown voltage VCBO=1500V . · High reliability (Adoption of HVP process).


    Original     		PDF 2SD2579 2039D 2SD2579] TA-1136 2sd2579 ta1136

    2SD2575

    Abstract: No abstract text available
    Text: Transistors 2SD2575 Silicon NPN epitaxial planar type For low-frequency power amplification Unit: mm 5.0±0.2 4.0±0.2 5.1±0.2 • Features 0.7±0.2 • Low collector-emitter saturation voltage VCE sat 0.7±0.1 Symbol Rating Unit Collector-base voltage (Emitter open)


    Original     		PDF 2SD2575 O-92-B1 2SD2575

    2sd2578

    Abstract: 2SD2578 equivalent 2sd2578 datasheet
    Text: SavantIC Semiconductor Product Specification 2SD2578 Silicon NPN Power Transistors DESCRIPTION •With TO-3PML package ·High speed ·High breakdown voltage ·Built-in damper diode APPLICATIONS ·Color TV horizontal deflection output PINNING PIN DESCRIPTION


    Original     		PDF 2SD2578 2sd2578 2SD2578 equivalent 2sd2578 datasheet

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD2573 Silicon NPN triple diffusion planar type Unit: mm For high current amplification, power amplification 90˚ 0.85±0.1 1.0±0.1 0.8 C 16.0±1.0 2.5±0.1 0.65±0.1 • Absolute Maximum Ratings TC = 25°C Symbol Rating Unit Collector to base voltage


    Original     		PDF 2SD2573

    2SD2579

    Abstract: ta1136
    Text: Ordering number:5795 NPN Triple Diffused Planar Silicon Transistor 2SD2579 Color TV Horizontal Deflection Output Applications Features Package Dimensions • High speed. · High breakdown voltage VCBO=1500V . · High reliability (Adoption of HVP process).


    Original     		PDF 2SD2579 2039D 2SD2579] 2SD2579 ta1136

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2573 Silicon NPN triple diffusion planar type For high current amplification, power amplification Unit: mm 0.85±0.1 1.0±0.1 0.8 C • Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 2002/95/EC) 2SD2573

    2SD2571

    Abstract: No abstract text available
    Text: TO SH IBA 2SD2571 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2571 Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS r • • High DC Current Gain : —2000 Min. (Vc e = 2V, IC = 1A) Low Saturation Voltage : V ç;e (sat) = 1.5V (Max.) (Iç; = lA)


    OCR Scan     		PDF 2SD2571 2SD2571

    2sD2394

    Abstract: D348 transistor TI2150 marking HRA 2SD2576
    Text: 2SD2167 2SD2394 / 2SD2576 Transistors I Power Transistor 31 ± 4 V , 2A 1) 2) 3) 4) Built-in zene r diode betw een collector and base. Z ener diode has low voltage dispersion. Strong protection against reverse pow er surges due to low loads. P c * 2 W (On 4 0 X 4 0 X 0 -7 m m ceram ic board)


    OCR Scan     		PDF 2SD2167 2SD2394 2SD2576 2SD2167 O-220, 0Dlb713 O-220FN O-220FN O220FP T0-220FP, D348 transistor TI2150 marking HRA 2SD2576

    2SD2571

    Abstract: No abstract text available
    Text: TO SHIBA 2SD2571 2SD2571 T O SH IBA TRANSISTO R SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm HIGH PO W ER SW ITCH ING APPLICATIO NS H A M M E R DRIVE, PULSE M O T O R DRIVE APPLICATIO NS r 10 ±0.3 ^3.2 ± 0.2 2.7±Q 2 <v> • • High DC Current Gain : —2000 Min.


    OCR Scan     		PDF 2SD2571 2SD2571

    2SD2571

    Abstract: JEITA SC-67
    Text: TO SH IBA 2SD2571 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2571 Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS r • • High DC Current Gain : —2000 Min. (Vc e = 2V, IC = 1A) Low Saturation Voltage : V ç;e (sat) = 1.5V (Max.) (Iç; = lA)


    OCR Scan     		PDF 2SD2571 2SD2571 JEITA SC-67

    transistor D 2394

    Abstract: 2SD2576
    Text: 2SD2167 2SD2394 / 2SD2576 Transistors I Power Transistor 31 ± 4 V , 2A 2SD2167 •F e a tu re s 1 ) Built-in zs n e r diode betw een collector and base. 2 ) Z en er diode has low voltage dispersion. 3 ) Strong protection aga inst reverse pow er surges due to low loads.


    OCR Scan     		PDF 2SD2167 2SD2394 2SD2576 2SD2167 -----2SD2576 cb--60V 94L-1098-0348) transistor D 2394 2SD2576

    Untitled

    Abstract: No abstract text available
    Text: 2SD2571 TO SHIBA 2SD2571 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm HIGH POWER SW ITCHING APPLICATIONS H A M M E R DRIVE, PULSE M O TO R DRIVE APPLICATIONS s 10 ± 0 .3 • High DC Current Gain : hpE = 2000 Min. (VCE = 2V, IC = 1A) Low Saturation Voltage : V C E (sat) = l-5V (Max.) (IC = 1A)


    OCR Scan     		PDF 2SD2571