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    2SD2457 Search Results

    2SD2457 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SD2457 Kexin Silicon NPN Epitaxial Planar Type Original PDF
    2SD2457 Panasonic Silicon NPN epitaxial planer type Original PDF
    2SD2457 Panasonic NPN Transistor Original PDF
    2SD2457 TY Semiconductor Silicon NPN Epitaxial Planar Type - SOT-89 Original PDF
    2SD2457 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD24570QL Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 40VCEO 1.5A MINI PWR Original PDF
    2SD24571YQ Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF
    2SD24571YR Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF

    2SD2457 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SD2457

    Abstract: No abstract text available
    Text: Transistor 2SD2457 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● High collector to emitter voltage VCEO. Large collector power dissipation PC. Mini Power type package, allowing downsizing of the equipment


    Original     		PDF 2SD2457 2SD2457

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2457 Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm 4.5±0.1 1.6±0.2 1.5±0.1 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 3˚ 4.0+0.25 –0.20


    Original     		PDF 2002/95/EC) 2SD2457

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SD2457 Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm 4.5±0.1 1.6±0.2 1.5±0.1 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 3˚ 4.0+0.25 –0.20 • High collector-emitter voltage Base open VCEO • Low collector power dissipation PC


    Original     		PDF 2SD2457

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2457 Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm 4.5±0.1 1.6±0.2 1.5±0.1 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 3˚ 4.0+0.25 –0.20


    Original     		PDF 2002/95/EC) 2SD2457

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1599G Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2457G • Package ■ Features • Low collector-emitter saturation voltage VCE(sat) • Mini Power type package, allowing downsizing of the equipment


    Original     		PDF 2002/95/EC) 2SB1599G 2SD2457G

    2SB1599

    Abstract: 2SD2457
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1599 Silicon PNP epitaxial planar type Unit: mm For power amplification Complementary to 2SD2457 4.5±0.1 1.6±0.2 1 0.4±0.08 3 2 0.5±0.08 1.5±0.1 Parameter Collector-emitter voltage (Base open)


    Original     		PDF 2002/95/EC) 2SB1599 2SD2457 2SB1599 2SD2457

    2SB1599

    Abstract: 2SA699 2SA699A 2SD2457 2SA699 H
    Text: Transistor 2SB1599 Silicon PNP epitaxial planer type For power amplification Complementary to 2SD2457 Unit: mm 45° • Absolute Maximum Ratings * 1.0–0.2 +0.1 0.4±0.08 +0.25 0.4max. Low collector to emitter saturation voltage VCE sat . Mini Power type package, allowing downsizing of the equipment


    Original     		PDF 2SB1599 2SD2457 2SA699A 50MHz 2SA699 2SB1599 2SA699 2SA699A 2SD2457 2SA699 H

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2457 Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm 4.5±0.1 1.6±0.2 1.5±0.1 3 2 0.5±0.08 2.5±0.1 0.4±0.04 di p Pl lan nclu ea e se pla m d m des


    Original     		PDF 2002/95/EC) 2SD2457

    2SB1599G

    Abstract: 2SD2457G
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1599G Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2457G • Package Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b ur o iz is ro


    Original     		PDF 2002/95/EC) 2SB1599G 2SD2457G 2SB1599G 2SD2457G

    2SD2457

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2457 Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm 4.5±0.1 1.6±0.2 1.5±0.1 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 3˚ M Di ain sc te


    Original     		PDF 2002/95/EC) 2SD2457 2SD2457

    2SB1599

    Abstract: 2SD2457
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1599 Silicon PNP epitaxial planar type Unit: mm For power amplification Complementary to 2SD2457 4.5±0.1 1.6±0.2 1 0.4±0.08 3 2 0.5±0.08 1.5±0.1 Rating Unit VCBO −50 V Collector-emitter voltage (Base open)


    Original     		PDF 2002/95/EC) 2SB1599 2SD2457 2SB1599 2SD2457

    2SB1599

    Abstract: 2SD2457
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1599 Silicon PNP epitaxial planar type Unit: mm For power amplification Complementary to 2SD2457 4.5±0.1 1.6±0.2 1 0.4±0.08 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 M Di ain sc te


    Original     		PDF 2002/95/EC) 2SB1599 2SD2457 2SB1599 2SD2457

    2SD2457G

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2457G Silicon NPN epitaxial planar type For low-frequency output amplification • Package • High collector-emitter voltage (Base open) VCEO • Low collector power dissipation PC


    Original     		PDF 2002/95/EC) 2SD2457G 2SD2457G

    2SB1599

    Abstract: 2SD2457
    Text: Transistors 2SB1599 Silicon PNP epitaxial planar type Unit: mm For power amplification Complementary to 2SD2457 4.5±0.1 1.6±0.2 1 0.4±0.08 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 • Low collector-emitter saturation voltage VCE sat • Mini Power type package, allowing downsizing of the equipment


    Original     		PDF 2SB1599 2SD2457 2SB1599 2SD2457

    2SD2457

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2457 Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm 4.5±0.1 M Di ain sc te on na tin nc ue e/ d 1.6±0.2 1.5±0.1 3 2 0.5±0.08 1.5±0.1 2.5±0.1


    Original     		PDF 2002/95/EC) 2SD2457 2SD2457

    2SA699

    Abstract: 2SA699A 2SB1599 2SD2457 2SA699 H
    Text: Transistor 2SB1599 Silicon PNP epitaxial planer type For power amplification Complementary to 2SD2457 Unit: mm 45° • Absolute Maximum Ratings * 1.0–0.2 +0.1 0.4±0.08 +0.25 0.4max. Low collector to emitter saturation voltage VCE sat . Mini Power type package, allowing downsizing of the equipment


    Original     		PDF 2SB1599 2SD2457 2SA699 2SA699A 2SB1599 2SD2457 2SA699 H

    Silicon NPN Epitaxial Planar Type

    Abstract: 2SD2457 1y smd 1Y MARKING
    Text: Transistors SMD Type Silicon NPN Epitaxial Planar Type 2SD2457 Features High collector-emitter voltage Base open VCEO. Low collector power dissipation PC. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine


    Original     		PDF 2SD2457 Charact10 Silicon NPN Epitaxial Planar Type 2SD2457 1y smd 1Y MARKING

    2SA699

    Abstract: 2SA699A 2SB1599 2SD2457
    Text: Transistor 2SB1599 Silicon PNP epitaxial planer type For power amplification Complementary to 2SD2457 Unit: mm 4.5±0.1 1.6±0.2 1 2 0.5±0.08 3 0.4±0.08 1.5±0.1 * 0.4±0.04 Parameter Symbol Ratings Unit Collector to base voltage VCBO –50 V Collector to emitter voltage


    Original     		PDF 2SB1599 2SD2457 2SA699 2SA699A 2SB1599 2SD2457

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1599 Silicon PNP epitaxial planar type Unit: mm For power amplification Complementary to 2SD2457 4.5±0.1 1.6±0.2 1 0.4±0.08 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 • Low collector-emitter saturation voltage VCE(sat)


    Original     		PDF 2002/95/EC) 2SB1599 2SD2457

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type Product specification 2SD2457 Features High collector-emitter voltage Base open VCEO. Low collector power dissipation PC. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine


    Original     		PDF 2SD2457

    2SD2457

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2457 Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm 4.5±0.1 1.6±0.2 1.5±0.1 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 3˚ M Di ain sc te


    Original     		PDF 2002/95/EC) 2SD2457 2SD2457

    Untitled

    Abstract: No abstract text available
    Text: Transistor 2SB1599 Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2457 Unit: mm 4.5±0.1 1.6±0.2 3 2 0.5±0.08 1 0.4±0.08 1.5±0.1 * 0.4±0.04 Parameter Symbol Ratings Unit Collector to base voltage VCBO –50 V Collector to emitter voltage


    Original     		PDF 2SB1599 2SD2457 55nteed

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2457G Silicon NPN epitaxial planar type For low-frequency output amplification • Features ■ Package • High collector-emitter voltage (Base open) VCEO • Low collector power dissipation PC


    Original     		PDF 2002/95/EC) 2SD2457G

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2457G Silicon NPN epitaxial planar type For low-frequency output amplification • Package • High collector-emitter voltage (Base open) VCEO • Low collector power dissipation PC


    Original     		PDF 2002/95/EC) 2SD2457G