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    2SD2241 Search Results

    2SD2241 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SD2241 Toshiba TRANS DARLINGTON NPN 100V 4A 3(2-10R1A) Original PDF
    2SD2241 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SD2241 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SD2241 Unknown Scan PDF
    2SD2241 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD2241 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD2241 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD2241 Toshiba Silicon NPN transistor for switching applications Scan PDF

    2SD2241 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    D2241

    Abstract: TRANSISTOR D2241 2SD2241 2SB1481
    Text: 2SD2241 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2241 Switching Applications • Unit: mm High DC current gain: hFE = 2000 min • Low saturation voltage: VCE (sat) = 1.5 V (max) • Complementary to 2SB1481 Maximum Ratings (Tc = 25°C) Characteristics


    Original     		PDF 2SD2241 2SB1481 D2241 TRANSISTOR D2241 2SD2241 2SB1481

    TRANSISTOR D2241

    Abstract: D2241
    Text: 2SD2241 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2241 Switching Applications • Unit: mm High DC current gain: hFE = 2000 min • Low saturation voltage: VCE (sat) = 1.5 V (max) • Complementary to 2SB1481 Maximum Ratings (Tc = 25°C) Characteristics


    Original     		PDF 2SD2241 2SB1481 TRANSISTOR D2241 D2241

    D2241

    Abstract: TRANSISTOR D2241 2SB1481 2SD2241
    Text: 2SD2241 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2241 Switching Applications • Unit: mm High DC current gain: hFE = 2000 min • Low saturation voltage: VCE (sat) = 1.5 V (max) • Complementary to 2SB1481 Absolute Maximum Ratings (Tc = 25°C)


    Original     		PDF 2SD2241 2SB1481 D2241 TRANSISTOR D2241 2SB1481 2SD2241

    B1481

    Abstract: 2SB1481 2SD2241
    Text: 2SB1481 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1481 Switching Applications Unit: mm • High DC current gain: hFE = 2000 min (VCE = −2 V, IC = −1.5 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −3 A) • Complementary to 2SD2241


    Original     		PDF 2SB1481 2SD2241 B1481 2SB1481 2SD2241

    B1481

    Abstract: 2SB1481 2SD2241 2SB148
    Text: 2SB1481 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1481 Switching Applications Unit: mm • High DC current gain: hFE = 2000 min (VCE = −2 V, IC = −1.5 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −3 A) • Complementary to 2SD2241


    Original     		PDF 2SB1481 2SD2241 -55oducts B1481 2SB1481 2SD2241 2SB148

    2SB1481

    Abstract: 2SD2241
    Text: SavantIC Semiconductor Product Specification 2SB1481 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SD2241 ·High DC current gain. ·Low saturation voltage. ·DARLINGTON APPLICATIONS ·For power amplifier applications


    Original     		PDF 2SB1481 O-220F 2SD2241 O-220F) -100V 2SB1481 2SD2241

    2SD2241

    Abstract: 2SB1481 rl10c
    Text: SavantIC Semiconductor Product Specification 2SD2241 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·High DC current gain : hFE=2000 Min ·Low saturation voltage ·Complement to type 2SB1481 ·DARLINGTON APPLICATIONS ·With switching applications


    Original     		PDF 2SD2241 O-220F 2SB1481 VCCA30V 2SD2241 2SB1481 rl10c

    B14-81

    Abstract: No abstract text available
    Text: 2SB1481 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1481 Switching Applications Unit: mm • High DC current gain: hFE = 2000 min (VCE = −2 V, IC = −1.5 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −3 A) • Complementary to 2SD2241


    Original     		PDF 2SB1481 2SD2241 SC-67 2-10R1A B14-81

    D2241

    Abstract: TRANSISTOR D2241
    Text: 2SD2241 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2241 Switching Applications • Unit: mm High DC current gain: hFE = 2000 min • Low saturation voltage: VCE (sat) = 1.5 V (max) • Complementary to 2SB1481 Absolute Maximum Ratings (Tc = 25°C)


    Original     		PDF 2SD2241 2SB1481 SC-67 2-10R1A D2241 TRANSISTOR D2241

    Darlington NPN Silicon Diode

    Abstract: DARLINGTON 3A 100V npn 2SB1481 2SD2241
    Text: Inchange Semiconductor Product Specification 2SD2241 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・High DC current gain : hFE=2000 Min ・Low saturation voltage ・Complement to type 2SB1481 ・DARLINGTON APPLICATIONS ・With switching applications


    Original     		PDF 2SD2241 O-220F 2SB1481 VCC30V Darlington NPN Silicon Diode DARLINGTON 3A 100V npn 2SB1481 2SD2241

    Untitled

    Abstract: No abstract text available
    Text: 2SB1481 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1481 Switching Applications Unit: mm • High DC current gain: hFE = 2000 min (VCE = −2 V, IC = −1.5 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −3 A) • Complementary to 2SD2241


    Original     		PDF 2SB1481 2SD2241

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


    Original     		PDF Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A 2SB1481 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S B 14 81 SWITCHING APPLICATIONS U nit in mm High DC Current Gain : hFE = 2000 Min. (VCe = - 2 V , IC = - 1 .5 A ) • T.r»w S n tn r n fin n Vnltacri* * W't-n - • Complementary to 2SD2241


    OCR Scan     		PDF 2SB1481 2SD2241

    transistor 2sd2241

    Abstract: 2SB1481 2SD2241
    Text: TO SH IBA 2SD2241 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SD2241 SWITCHING APPLICATIONS U n it in mm 10 ± 0 .3 ^ 3 .2 ± 0.2 2.7±Q 2 r • • H igh DC Current Gain : hpE = 2000 Min. CO Low Saturation Voltage : V ç;e (sat) = 1.5V (Max.) cn ro o


    OCR Scan     		PDF 2SD2241 2SB1481 transistor 2sd2241 2SB1481 2SD2241

    2SD2241

    Abstract: 2SB1481 S5 3000
    Text: TOSHIBA 2SD2241 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SD2241 Unit in mm SW ITCHING APPLICATIONS • High DC Current Gain • r : hp^ —2000 Min. <v> o Low Saturation Voltage : V q £ (sat) = l-5V (Max.) cn CO O Complementary to 2SB1481 1.1 1.1


    OCR Scan     		PDF 2SD2241 2SB1481 100//S* 2SD2241 2SB1481 S5 3000

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A 2SB1481 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S B 1 481 Unit in mm SWITCHING APPLICATIONS • High DC Current Gain : hpE = 2000 Min. (VCE = -2 V , IC= -1.5A ) Low Saturation Voltage : Vc e (sat)~ —1-5V (Max.) (Iq = —3A) Complementary to 2SD2241


    OCR Scan     		PDF 2SB1481 2SD2241

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A 2SD2241 2SD2241 TO SHIBA TRANSISTOR SW ITCHING APPLICATIONS • • • SILICON NPN EPITAXIAL TYPE Unit in mm ^ 3.2 ± 0.2 1 0 1 0.3 High DC Current Gain : hpg = 2000 Min. Low Saturation Voltage : V q e = l-5V (Max.) Complementary to 2SB1481


    OCR Scan     		PDF 2SD2241 2SB1481

    Untitled

    Abstract: No abstract text available
    Text: 2SB1481 SILICON PNP EPITAXIAL TYPE U nit in mm SW ITCHING APPLICATIONS 10 ±0.3 • • • High DC Current Gain : hFE = 2000 M m . (V cE = -2V , IC = -1 .5 A ) Low Saturation Voltage : VcE(sat) = — (Max.) (Ic = —3A) Complementary to 2SD2241 W - M A X I M U M RATI NGS (Ta = 2 5°C)


    OCR Scan     		PDF 2SB1481 2SD2241 SC-67

    2sd2241

    Abstract: FE200
    Text: SILICON NPN EPITAXIAL TYPE 2SD2241 SWITCHING APPLICATIONS Unit . H i g h D C C u r r e n t Cyain 03.2 ±0.2 : h FE=2000 Min. (VcE=2V, . Low Saturation Voltage . Conplementary FT Ic=1.5A) : V c E ( s a t ) = l •5 V ( M a x . ) ( I c = 3 A ) to 2 S B 1 4 8 1


    OCR Scan     		PDF 2SD2241 2sd2241 FE200

    Untitled

    Abstract: No abstract text available
    Text: 2SD2241 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE Unit in mm SWITCHING APPLICATIONS • • • 10 +0.3 High DC Current Gain : hjrE = 2000 Min. Low Saturation Voltage : V q e (§at)= 1-5V (Max.) Complementary to 2SB1481 , $ 3.2 ± 0.2 2.7±02


    OCR Scan     		PDF 2SD2241 2SB1481

    C3182N

    Abstract: C3888A 2sd 3420 2SC2268 2sc2073-2 EP 1408 3884A 3182N 2SD 388A 2SA855
    Text: •DISCONTINUED ty p e lis t T h e fo llo w in g D evices are d isco n tin u ed as o f J u n e 1994, a n d a re n o lo n g e r a v a ila b le . Please refer o f th e list fo r later device a lte rn a tiv e s . T y p e No. R ecom m end R eplacem ent T ypp Nn


    OCR Scan     		PDF 2SA51 2SA57 2SC3281 2SD1571 C3182N C3888A 2sd 3420 2SC2268 2sc2073-2 EP 1408 3884A 3182N 2SD 388A 2SA855

    A1241

    Abstract: c4684 2_s transistors c3072 B834 SA1357 c4793
    Text: S urface Mo unt Device 4 Power Mold Transistors (D PACK) E lectrical C h a ra cte ristics {T a= 2 5°C ) A p plication T yp e No. VCEO (V) Ic (A) Pc (W ) Pc* (W ) Tj (°C) C o m plem en tary 2 S A 1225 D rive r stage. Pow er am plification. -160 -1.5 1.0


    OCR Scan     		PDF A1241 2SD1221 2SC4681 2SC4685 c4684 2_s transistors c3072 B834 SA1357 c4793