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    2SD2012 Search Results

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    2SD2012 Price and Stock

    STMicroelectronics 2SD2012

    TRANS NPN 60V 3A TO-220F
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    DigiKey 2SD2012 Tube
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    Quest Components 2SD2012 14
    • 1 $1.957
    • 10 $1.5656
    • 100 $1.1742
    • 1000 $1.1742
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    Vyrian 2SD2012 240
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    Win Source Electronics 2SD2012 40,000
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    Micro Commercial Components 2SD2012-BP

    TRANS NPN 60V 3A TO-220AB
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    DigiKey 2SD2012-BP Bulk
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    Toshiba America Electronic Components 2SD2012

    TRANSISTOR,BJT,NPN,60V V(BR)CEO,3A I(C),TO-220AB
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    Quest Components 2SD2012 937
    • 1 $2.868
    • 10 $2.868
    • 100 $2.868
    • 1000 $1.0755
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    2SD2012 99
    • 1 $0.45
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    Toshiba America Electronic Components 2SD2012(F)

    Trans GP BJT NPN 60V 3A 3-Pin(3+Tab) TO-220NIS
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    Win Source Electronics 2SD2012(F) 39,000
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    2SD2012 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD2012 STMicroelectronics TRANS GP BJT NPN 60V 3A 3TO-220F Original PDF
    2SD2012 Toshiba Audio Frequency Power Amplifier Original PDF
    2SD2012 Toshiba Low-Frequency Power Transistors (2SB Series, 2SD Series); Surface Mount Type: N; Package: TO-220NIS; Number Of Pins: 3; Viewing Angle: taping unavailable; Publication Class: Transistor for AC-DC converter; Application Scope: switching regulator; Part Number: 2SB1375 Original PDF
    2SD2012 Various Russian Datasheets Transistor Original PDF
    2SD2012 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD2012 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD2012 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SD2012 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SD2012 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD2012 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD2012 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD2012 Toshiba Silicon NPN transistor for audio frequency power amplifier applications Scan PDF
    2SD2012 Toshiba TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE Scan PDF
    2SD2012 Toshiba NPN Transistor Scan PDF
    2SD2012-BP Micro Commercial Components TRANSISTOR TO-92 MOD Original PDF
    2SD2012(F,M) Toshiba 2SD2012 - TRANSISTOR NPN 60V 3A TO-220 Original PDF

    2SD2012 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SD2012 Features • • • • • • High DC Current Gain: hFE 1 =100 (Min.) Low Saturation Voltage: VCE(sat) =1.0V (Max.)


    Original     		2SD2012 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SD2012 Features • • • • • • High DC Current Gain: hFE 1 =100 (Min.) Low Saturation Voltage: VCE(sat) =1.0V (Max.)


    Original     		2SD2012 PDF

    2SD2012

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SD2012 Features • • • High DC Current Gain: hFE 1 =100 (Min.) Low Saturation Voltage: VCE(sat) =1.0V (Max.) High Power Dissipation: PC=25W (TC=25OC)


    Original     		2SD2012 O-220F 2SD2012 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SD2012 Features • • • • • High DC Current Gain: hFE 1 =100 (Min.) Low Saturation Voltage: VCE(sat) =1.0V (Max.)


    Original     		2SD2012 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Micro Commercial Components 2SD2012 Features • • • • • • High DC Current Gain: hFE 1 =100 (Min.) Low Saturation Voltage: VCE(sat) =1.0V (Max.)


    Original     		2SD2012 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors 2SD2012 TO-220F TRANSISTOR NPN 1. BASE FEATURES z Audio Frequency Power Amplifier Applications z High DC Current Gain z Low Saturation Voltage z High Power Dissipation


    Original     		O-220F 2SD2012 O-220F PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SD2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications • High DC current gain: hFE 1 = 100 (min) • Low saturation voltage: VCE (sat) = 1.0 V (max) • High power dissipation: PC = 25 W (Tc = 25°C)


    Original     		2SD2012 PDF

    2sd2012

    Abstract: No abstract text available
    Text: 2SD2012 NPN SILICON POWER TRANSISTOR • ■ ■ HIGH DC CURRENT GAIN LOW SATURATION VOLTAGE INSULATED PACKAGE FOR EASY MOUNTING APPLICATIONS GENERAL PURPOSE POWER AMPLIFIERS ■ GENERAL PURPOSE SWITCHING ■ DESCRIPTION The 2SD2012 is a silicon NPN power transistor


    Original     		2SD2012 2SD2012 O-220F O-220F PDF

    transistor d2012

    Abstract: d2012 transistor br d2012 d2012 AMPLIFIER 2SD2012 D2012 D2012 toshiba toshiba d2012
    Text: 2SD2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications • High DC current gain: hFE 1 = 100 (min) • Low saturation voltage: VCE (sat) = 1.0 V (max) • High power dissipation: PC = 25 W (Tc = 25°C)


    Original     		2SD2012 transistor d2012 d2012 transistor br d2012 d2012 AMPLIFIER 2SD2012 D2012 D2012 toshiba toshiba d2012 PDF

    transistor d2012

    Abstract: d2012 transistor d2012 AMPLIFIER BR D2012 2SD2012 D2012 D2012 toshiba
    Text: 2SD2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications • Low saturation voltage: VCE sat = 0.4 V (typ.) (IC = 2A / IB = 0.2A) • High power dissipation: PC = 25 W (Tc = 25°C) Unit: mm Absolute Maximum Ratings (Ta = 25°C)


    Original     		2SD2012 transistor d2012 d2012 transistor d2012 AMPLIFIER BR D2012 2SD2012 D2012 D2012 toshiba PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components 2SD2012 Features • • • • High DC Current Gain: hFE 1 =100 (Min.) Low Saturation Voltage: VCE(sat) =1.0V (Max.)


    Original     		2SD2012 O-220F PDF

    2SB1375

    Abstract: 2sb1375 transistor
    Text: 2SB1375 PNP TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 1 Features — 2 3 High Power Dissipation: PC=25W(TC=25℃) Low voltage:VCE(sat)=-1.5V(Max)(IC=-2A,IB=-0.2A) Collector metal(Fin)is Coverd with Mold Regin Complementary to 2SD2012 — — —


    Original     		2SB1375 O-220 O-220 2SD2012 -50mA 2sb1375 transistor PDF

    2sd2012

    Abstract: 2SB1366 2SB136
    Text: Inchange Semiconductor Product Specification 2SD2012 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SB1366 ·Low collector saturation voltage ·Collector power dissipation: PC=25W TC=25℃ APPLICATIONS ·Audio frequency power amplifier and


    Original     		2SD2012 O-220F 2SB1366 O-220F) 2sd2012 2SB1366 2SB136 PDF

    2SB1375

    Abstract: 2SD2012
    Text: Inchange Semiconductor Product Specification 2SB1375 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD2012 ・Low collector saturation voltage: VCE SAT =-1.5V(Max) at IC=-2A,IB=-0.2A ・Collector power dissipation:


    Original     		2SB1375 O-220F 2SD2012 O-220F) 2SB1375 2SD2012 PDF

    transistor d2012

    Abstract: d2012 transistor D2012 toshiba d2012 AMPLIFIER br d2012 2SD2012 D2012
    Text: 2SD2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications • High DC current gain: hFE 1 = 100 (min) • Low saturation voltage: VCE (sat) = 1.0 V (max) • High power dissipation: PC = 25 W (Tc = 25°C)


    Original     		2SD2012 transistor d2012 d2012 transistor D2012 toshiba d2012 AMPLIFIER br d2012 2SD2012 D2012 PDF

    2sd2012 transistor

    Abstract: 2sd2012 2SB1375
    Text: TOSHIBA Discrete Semiconductors 2SD2012 Transistor Unit in mm Silicon NPN Triple Diffused Type Audio Frequency Power Amplifier Features • High DC Current Gain : 100 Min. • Low Saturation Voltage - VCE (sat) = 1.0V (Max.) (IC = 2A, IB = 0.2A) • High Power Dissipation


    Original     		2SD2012 2SB1375 2sd2012 transistor 2sd2012 2SB1375 PDF

    D2012 toshiba

    Abstract: transistor d2012 d2012 transistor br d2012 transistor 2SD2012
    Text: 2SD2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications • High DC current gain: hFE 1 = 100 (min) • Low saturation voltage: VCE (sat) = 1.0 V (max) • High power dissipation: PC = 25 W (Tc = 25°C)


    Original     		2SD2012 2-10R1A D2012 toshiba transistor d2012 d2012 transistor br d2012 transistor 2SD2012 PDF

    B1375

    Abstract: 2SB1375 2SD2012
    Text: 2SB1375 東芝トランジスタ シリコンPNP三重拡散形 2SB1375 ○ 低周波電力増幅用 • 単位: mm 飽和電圧が低い。 : VCE sat = −1.5 V (最大) (IC = −2 A, IB = −0.2 A) • コレクタ損失が大きい。 • 2SD2012 とコンプリメンタリになります。


    Original     		2SB1375 2SD2012 2-10R1A 20070701-JA B1375 2SB1375 2SD2012 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SD2012 TO SHIBA 2SD2012 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS • • 1 0 1 0.3 High DC Current Gain : hpE l = 100 (Min.) Low Saturation Voltage : v CE(sat) = 1-ov (Max.) High Power Dissipation : P q = 25W (Tc = 25°C)


    OCR Scan     		2SD2012 PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED TY P E 2SD2012 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. Unit in . High DC Current Gain : 100 Min. 1Q3IIAX . Low Saturation Voltage 0 3 .2 ± Q 2 /- W' : VcE(sat)-l-0V(Max.)(Ic-2A, Ib =0.2A) . High Power Dissipation : Pc=25W (Tc=25°C)


    OCR Scan     		2SD2012 O-220 PDF

    transistor 2sd2012

    Abstract: 2sd2012
    Text: 2SD2012 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2012 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS • • • High DC Current Gain : hpE 1 - 100 (Min.) Low Saturation Voltage : v CE(sat) = I-0 v (Max.) High Power Dissipation : P c = 25 W (Tc = 25°C)


    OCR Scan     		2SD2012 transistor 2sd2012 2sd2012 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SD2012 T O SH IB A 2SD2012 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS • • 1 0 ± 0 .3 High DC Current Gain : hpE l = 100 (Min.) Low Saturation Voltage : v CE(sat) = 1-ov (Max.) High Power Dissipation : P(] = 25W (Tc = 25°C)


    OCR Scan     		2SD2012 PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD2012 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. Unit in mm . High DC Current Gain : 100 Min. ia3MAX, 0 zz ± a z . Low Saturation Voltage : VCE(sat) = l*OV(Max.)(IC=2A, IB=0.2A) . High Power Dissipation : Pc=25W (Tc=25°C)


    OCR Scan     		2SD2012 O-220 10E1A PDF

    2SD2Q12

    Abstract: No abstract text available
    Text: TOSHIBA 2SD2012 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2Q12 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS U nit in mm 10 + 0.3 , $ 3.2 ± 0.2 2.7 ± 0 2 High DC C urrent Gain : IrpE 1 = 100 (Min.) Low Saturation Voltage V’ nVy.ci T w _( .»_ ai.\


    OCR Scan     		2SD2012 2SD2Q12 2SD2Q12 PDF