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    2SD196 Search Results

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    2SD196 Price and Stock

    ROHM Semiconductor 2SD1963T100S

    TRANS NPN 20V 3A MPT3
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    DigiKey 2SD1963T100S Reel 1,000
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    ROHM Semiconductor 2SD1963T100R

    TRANS NPN 20V 3A MPT3
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    Mouser Electronics 2SD1963T100R 980
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    Samtec Inc MTMM-120-02-S-D-196

    2MM TERMINAL STRIP
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    Newark MTMM-120-02-S-D-196 Bulk 177 1
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    Samtec Inc MTMM-107-02-S-D-196

    VARIABLE POST HEIGHT HEADER STRI
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    Powell Electronics MTMM-107-02-S-D-196 393 1
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    Samtec Inc MTMM-117-02-S-D-196

    Connector Unshrouded Header 34 Position 2mm Solder Straight Through Hole - Bulk (Alt: MTMM-117-02-S-D-19)
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    2SD196 Datasheets (77)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SD196 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SD196 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD196 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SD196 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD196 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD196 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD196 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD196 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD196 Unknown Cross Reference Datasheet Scan PDF
    2SD1960 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD1960 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD1960 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD1960 ROHM TO-92, SPT Transistors Scan PDF
    2SD1961 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1961 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD1961 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD1961 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD1961 ROHM 1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE Scan PDF
    2SD1961 ROHM Epitaxial Planar NPN Silicon Transistors Scan PDF
    2SD1961 ROHM TO-92L, TO-92LS, MRT Transistors Scan PDF

    2SD196 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB1308

    Abstract: 2SD1963 T100
    Text: 2SB1308 Transistors Power transistor −50V, −3A 2SB1308 zFeatures 1) Low saturation voltage, typically VCE(sat) = −0.45V (Max.) at IC/IB = −1.5A / −0.15A. 2) Excellent DC current gain characteristics. 3) Complements the 2SD1963. zExternal dimensions (Unit : mm)


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    PDF 2SB1308 2SD1963. 2SB1308 2SD1963 T100

    2SD1964

    Abstract: tf 130
    Text: Power Transistors 2SD1964 Silicon NPN epitaxial planar type Unit: mm • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO 130 V Collector-emitter voltage (Base open) VCEO 80 V Emitter-base voltage (Collector open)


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    PDF 2SD1964 SC-67 O-220F-A1 2SD1964 tf 130

    2SD1964

    Abstract: No abstract text available
    Text: Power Transistors 2SD1964 Silicon NPN epitaxial planar type For power switching Unit: mm • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 130 V Collector to emitter voltage VCEO 80 V Emitter to base voltage


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    PDF 2SD1964 2SD1964

    Untitled

    Abstract: No abstract text available
    Text: 2SD1961 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V) I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)1.2 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)


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    PDF 2SD1961

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification 2SD1963 Features Low saturation voltage. Excellent DC current gain characteristics. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO


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    PDF 2SD1963 -50mA, 100MHz

    B204

    Abstract: 2SB1308 2SD1963 rohm d204 D204
    Text: Transistors 2SB1308 2SD1963 94S-166-B204 (94S-342-D204) 290 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the


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    PDF 2SB1308 2SD1963 94S-166-B204) 94S-342-D204) B204 2SB1308 2SD1963 rohm d204 D204

    BF239

    Abstract: 2SD1963 RC244
    Text: SPICE PARAMETER 2SD1963 by ROHM TR Div. * 2SD1963 NPN BJT model * Date: 2006/11/14 .MODEL 2SD1963 NPN + IS=700.00E-15 + BF=239.68 + VAF=3.5571 + IKF=15.353 + ISE=700.00E-15 + NE=1.6035 + BR=88.202 + VAR=100 + IKR=.35583 + ISC=228.00E-12 + NC=1.6682 + NK=.81465


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    PDF 2SD1963 Q2SD1963 00E-15 00E-12 000E-3 476E-3 22E-12 29E-12 BF239 2SD1963 RC244

    2SD1963

    Abstract: 2SB1308 T100 RS Marking
    Text: 2SD1963 Transistors Power transistor 50V, 3A 2SD1963 zFeatures 1) Low saturation voltage, typically VCE(sat) = −0.45V (Max.) at IC/IB = −1.5A / −0.15A. 2) Excellent DC current gain characteristics. 3) Complements the 2SB1308. zExternal dimensions (Unit : mm)


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    PDF 2SD1963 2SB1308. 2SD1963 2SB1308 T100 RS Marking

    2SD1964

    Abstract: 2SD196
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1964 Silicon NPN epitaxial planar type Unit: mm 10.0±0.2 4.2±0.2 5.5±0.2 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)


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    PDF 2002/95/EC) 2SD1964 SC-67 O-220F-A1 2SD1964 2SD196

    2SD1963

    Abstract: B204 2SB1308 94S-166-B204 D204
    Text: Transistors 2SB1308 2SD1963 94S-166-B204 (94S-342-D204) 290


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    PDF 2SB1308 2SD1963 94S-166-B204) 94S-342-D204) 2SD1963 B204 2SB1308 94S-166-B204 D204

    transistor marking DG

    Abstract: 2SD1963 low power TRANSISTOR SMD
    Text: Transistors SMD Type Power Transistor 2SD1963 Features Low saturation voltage. Excellent DC current gain characteristics. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 20 V Emitter-base voltage


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    PDF 2SD1963 -50mA, 100MHz transistor marking DG 2SD1963 low power TRANSISTOR SMD

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD1964 2SD1964 Silicon NPN Epitaxial Planar Type Package Dimensions Power Switching U n it * mir • Features 4.4m ax. 10.2m ax. r 5.7m ax, • L o w c o l l e c t o r - e m i t t e r s a tu r a t io n v o lta g e VcEtsao 2.9max.f • G o o d lin e a r ity o f D C c u r r e n t g a in ( h tt )


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    PDF 2SD1964 2SD19Ã

    c 5802 transistor

    Abstract: 2SD1961 TO-92U D45 TRANSISTOR ic 6802 l04c 2SD1962M 2SD2098 TRANSISTOR c 5802 2SD2097
    Text: h ~7> V 7s $ / T ransistors 2SD1961 /2SD1962M/2SD2097/2SD2098 2SD1961 /2SD1962M 2SD2097/2SD2098 NPN V U =l > h 7 > y X $ Epitaxial Planar NPN Silicon Transistor • rliÈ U /D im en sio n s Unit: mm 1) VcE(sat) VcE(sat)=1V (Max.) Ic / I b = 4 A / 0.1 A tlT ^ - S o


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    PDF 2SD1961 /2SD1962M/2SD2097/2SD2098 /2SD1962M 2SD2097/2SD2098 O-92U 65-llt- c 5802 transistor TO-92U D45 TRANSISTOR ic 6802 l04c 2SD1962M 2SD2098 TRANSISTOR c 5802 2SD2097

    2SD1959

    Abstract: 2SB1301 2SD1951 2SD1941 2sd1944 2SD1948 2SD1940 2SD1943 2SD1946 2SD1947
    Text: - 274 - m. 2SD1940 2SD1941 2SD1943 2SD1944 2SD1946 2SD1947 2SD1948 2SD1949 2SD1950 2SD1951 2SD1952 2SD1953 2SD1955 2SD1956 z&umï 2SD1958 2SD1959 2SD1961 2SD1962M 2SD1964 2SD197Q 2SD1971 2SD1972 2SD1974 2SD1975 2SD1976 2SD1977 2SD1978 2SD1979 2SD1981 2SD1983


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    PDF 2SD1940 2SD1941 2SD1943 2SD1944 2SD1946 2SD1947 2SD1948 2SD19CE 2SD1964 O-126) 2SD1959 2SB1301 2SD1951 2sd1944 2SD1948 2SD1940 2SD1947

    TRANSISTOR D401

    Abstract: D401 -y 2SD1963 D4011
    Text: h 7 > S' 7 $ /Transistors O “ C m Q A * • ^ w w 2SD1963 it f ^ ^ '> 7 ^ y u - ^ 0 N P N y ,; n > K 7 > y ^ ^ Epitaxial Planar NPN Silicon Transistor fé S â fc ï^ J iflte ffl/L o w Freq. Power Amp. 7 s h P ? K 7 7 7 V j- f f l/S t r o b o Flash. • 51-JB‘T a i a / Dimensions Unit : mm)


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    PDF 2SD1963 SC-62 7fl26Tn G011115 TRANSISTOR D401 D401 -y 2SD1963 D4011

    f 4558

    Abstract: 4558 fa 4558 2SC4588 4558, 4556 2SD2076 4558 nec 2SC4420 NEC 4559 2SC3425
    Text: - m € Type No. € tt Manuf. 2SC 4548 / 2SC 4549 > H # o m. p B $ B S B 8 2SC 4550 2SC 4551 2SC 4552 H # SANYO *£ M TOSHIBA 2SD127D 2SD1271 2SC3748 2SC3709 2SÜ2151 2SC3710 2SD1964 2SD1947 2SD1271 2SC 4555 = 2SC 4556 1 t'y'T'y 2SC4162 2SC3626 y -ytry 2SC4459


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    PDF 2SC3075 2SC3748 2SD1408 2SD1270 2SC4596 2SC3747 2SD1411 2SD1271 2SC3709 f 4558 4558 fa 4558 2SC4588 4558, 4556 2SD2076 4558 nec 2SC4420 NEC 4559 2SC3425

    1271A

    Abstract: nec 1251 2SB2198 2SD1227M 2sd1070 2SC4008 2SD2394 2SD1593 2sd1855 2sd1944
    Text: - S « Type No. tt 2SD 1243 » 2SD 1243A T 2SD 1245 fé fé fé 2S0 1246 H W 2SD 1247 y =- 2SD 1248 . 2SD 1244 « Manuf. H n SANYO T 2SD1064 T 2SD1064 Ä $ TOSHIBA a NEC B ÌL HITACHI □ MITSUBISHI h, ROHM 2SD1962M 2SC32S6 2SD1196 i 2SD1227M 2SD965 2SD1513


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    PDF 2SD1243 2SD1243A 2SD1244 2SD1245 2SD1246 2SD1247 2SD1248 2SD1248K 2SD1251 2SD1252 1271A nec 1251 2SB2198 2SD1227M 2sd1070 2SC4008 2SD2394 2SD1593 2sd1855 2sd1944

    2sd1960

    Abstract: 2sd1960 transistor 2SD196
    Text: 2SD1960 h 7 > V 7s £ /Transistors 2SD 1960 Epitaxial Planar NPN Silicon Transistor /Medium Power Amp. • « * /Dim ensions Unit : mm 1) V c e (sat) 2) • Features 1) Extremely Low collector saturation voltage (Vce (sat) 2) Compact but possible to drive large


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    PDF 2SD1960 2SD1960 2sd1960 transistor 2SD196

    2SD1961

    Abstract: C45A
    Text: h 7 > y X $ / T ransistors 2SD1961 /2SD1962M/2SD2097/2SD2098 2SD1961/2SD1962M 2SD2097/2SD2098 NPN '> • ;= ! > Epitaxial Planar NPN Silicon Transistor • W f2\ti±E 3/D im ensio ns Unit: mm M,a n » oc /mv> • • iffiftlilfcJElte/Absolute Maximum Ratings (Ta=25°C)


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    PDF 2SD1961 /2SD1962M/2SD2097/2SD2098 2SD1961/2SD1962M 2SD2097/2SD2098 2SD1961 2SD1962M 2SD2097 2SD2098 /2SD1962M/2SD209 C45A

    CP25A

    Abstract: 2SD1964
    Text: P o w e r T ra n s is to rs 2SD1964 2S D 1964 Silicon N P N Epitaxial P lanar Type P a c k a g e D im e n s io n s P o w e r Sw itch in g • F e a tu re s • Low collector-em itter saturation voltage • Good linearity of DC c u rre n t gain htt • High It


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    PDF 2SD1964 O-220 001b113 CP25A 2SD1964

    2sd1960 transistor

    Abstract: 2sd1960 transistor 2SD1960 2SD 92 M transistor 2 SC 359 NPN TRANSISTOR 2sD1960
    Text: 2SD1960 Transistor, NPN Features Dimensions Units : mm • available in TO-92 (SC-43) package • extremely low collector saturation voltage, typically VCE(8at) = 0.3 V at lc/lB = 4 A/0.1 A compact but possible to drive large current, typically l C ( m a x ) = 5 A


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    PDF 2SD1960 SC-43) 2SD1960 2sd1960 transistor transistor 2SD1960 2SD 92 M transistor 2 SC 359 NPN TRANSISTOR 2sD1960

    2SD1961

    Abstract: transistor 2097
    Text: 2SD1961 /2S D 1962M /2S D 2097 h z 7 > y X ^ r /"Transistors 2SD1961 /2SD1962M /2SD2097 Epitaxial Planar NPN Silicon Transistor • 1 W fé ^ Ü E I/ D im e n s io n s Unit: mm & & 1) V cE (sa t)tfr '> '° V c E (s a t)= 1 V (M ax.) (I c / I b = 4 A / 0 . 1 A )


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    PDF 2SD1961 1962M /2SD1962M /2SD2097 /2SD1962M/2SD2097 transistor 2097

    T272i

    Abstract: 2SC 5802 2SD1961 R2713 c 5802 transistor L2000 mrrr 2SD1962M 2SD2097 2SD2098
    Text: ROHM CO L T » h7 40E /Transistors » Bi 7 Û S Ô ci ci cî OOObDST ö «RHM 2SD1961/2SD1962M/2SD2097/2SD2098 2 S D 1 S 6 1 /2 S D 1 962M S S 2 S D 2 C 9 7 /2 S ÎD 2 C 9 3 Vt>4V:'A'vJ|*J' NPN y y a > Epitaxial Planar NPN Silicon Transistor 1W f i xt'iiEl/'Dlm ensions Unît; mm


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    PDF 2SD1S81 2SD2C97/2SD2093 2SD1961 /2SD1962M/2SD2097/2SD2098 r-27-13 O-92L/ty/r-i-- T-27-13 O-92L T272i 2SC 5802 R2713 c 5802 transistor L2000 mrrr 2SD1962M 2SD2097 2SD2098

    2SD1960

    Abstract: 2sd1960 transistor 2SD1765 2SD2398 100V 2A MPT3 2SB1287 2SB1316 2SB1567 2SB1580 2SD1867
    Text: 2SB1580 / 2SB1316 / 2SB1567 / 2SB12B7 2SD2195 / 2SD1960 / 2SD1867 / 2SD2398 / 2SD1765 Transistors I Power Transistor —100V, —2A 2SB1580 / 2SB1316 / 2SB1567 / 2SB1287 •F e a tu re s •A b s o lu te maximum ratings (Ta=25'C ) 1 ) Darlington connection for high DC current gain.


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    PDF 2SB1580 2SB1316 2SB1567 2SB12B7 2SD2195 2SD1960 2SD1867 2SD2398 2SD1765 2sd1960 transistor 2SD1765 100V 2A MPT3 2SB1287