Hitachi DSA00164
Abstract: No abstract text available
Text: 2SD1756 Silicon NPN Triple Diffused Application High voltage high current amplifier Outline TO-220AB 2 1 1 2 3 1. Base 2. Collector Flange 3. Emitter 3 kΩ (Typ) 150 Ω (Typ) 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage
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2SD1756
O-220AB
D-85622
Hitachi DSA00164
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Untitled
Abstract: No abstract text available
Text: MCC omponents 21201 Itasca Street Chatsworth !"# $ % !"# 2SD1756 Features • • With TO-220 package Power amplifier applications NPN Silicon Power Transistors Maximum Ratings Symbol V CEO V CBO
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2SD1756
O-220
O-220
10Adc,
10Adc
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Hitachi DSA002747
Abstract: No abstract text available
Text: 2SD2101 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 12 3 1. Base 2. Collector 3. Emitter 3 kΩ Typ 150 Ω (Typ) 3 2SD2101 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage
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2SD2101
O-220FM
D-85622
Hitachi DSA002747
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STk442-130
Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Text: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components
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100-up)
STk442-130
M56730ASP
PAC011A
PAC010A
UPC2581
PAL005A
stk413-020a
upc2581v
ecg semiconductors master replacement guide
STRS5717
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STRS6307
Abstract: STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020
Text: 2N3054 TO-66 2N32741 TO-66 2N4240 TO-66 2N4908 TO-3 2N3054A TO-66 2N3766 TO-66 2N4273 TO-66 2N4909 TO-3 2N3055 TO-3 2N3767 TO-66 2N4298 TO-66 2N4910 TO-66 2N3171 TO-3 2N3771 TO-3 2N4347 TO-3 2N4911 TO-66 2N3172 TO-3 2N3772 TO-3 2N4348 TO-3 2N4912 TO-66 2N3173
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2N3054
2N32741
2N4240
2N4908
2N3054A
2N3766
2N4273
2N4909
2N3055
2N3767
STRS6307
STR5412
2N3055 TO-220
S2000A3
STRS6309
S2000a2
BDW36
2SC3883
strs6308
STR6020
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Untitled
Abstract: No abstract text available
Text: 2SD1756 Silicon NPN Triple Diffused HITACHI Application High voltage high current amplifier Outline TO -220A B 2 1 1. Base 2. C ollector Flange 3. Emitter 1 2 3 1— v T 3 kQ (Typ) - v w - | 1 50 Q (Typ) ¿ 3 Absolute Maximum Ratings (Ta 25°C) = Item Symbol
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2SD1756
-220A
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3ALF
Abstract: 2SD1756
Text: HITACHI 2SD1756 SILICON NPN TRIPLE DIFFUSED H IG H V O L T A G E H IG H C U R R E N T A M P L I F I E R i u m i f. Rase 2. Collector Flange ?. Emitter (Dimensions in mm) (JEDEC TO-220AB) ¡ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Item MAXIMUM COLLECTOR DISSIPATION
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2SD1756
O-220AB)
2SD1756
100mA*
2SJH756
3ALF
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Untitled
Abstract: No abstract text available
Text: 2SD1756 Silicon NPN Triple Diffused HITACHI Application High voltage high current amplifier Outline TO -220A B l ì 1 1. Base 2. C ollector Flange 3. Emitter 1 2 3 3 k£2 (Typ) 1 50 £2 (Typ) ¿ 3 Absolute Maximum Ratings (Ta 25 °C) = Item Symbol Ratings
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2SD1756
-220A
D-85622
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2SD175
Abstract: No abstract text available
Text: HITACHI 2SD1756 SILICON NPN TRIPLE DIFFUSED HIGH V O LT A G E H IGH C U R R E N T A M P L IF IE R i rrf t 1, 2. CoMeçtor Ü ;lan*e 7>. liiruU cr DiiTWrtMtw? in mil»} (JE D E C TO-220AB) I A B S O L U T E M AXIM UM R A T IN G S (Ta=25 C) ( 2SD175«? Unii
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2SD1756
O-220AB)
2SD175«
2SD175
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Untitled
Abstract: No abstract text available
Text: 2SD1756 Silicon NPN Triple Diffused HITACHI Application High voltage high current amplifier Outline TO -220AB 3 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage ^C B O 200 V Collector to em itter voltage VCEQ 200 V Emitter to base voltage
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2SD1756
-220AB
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2SD2101
Abstract: No abstract text available
Text: 2SD2101 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier Outline TO -220FM 2 Î 1 Base 2 Collector 3 Emitter 3 ki3 Typ 1 50 Í2 (Typ) ¿ 3 2SD2101 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage
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2SD2101
-220FM
2SD2101
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2SD1761
Abstract: 2S01761 2sd1764 2sb117 2SD1760F5 2SD1746 2SD1747 2SD1747A 2SD1748 2SD1748A
Text: - 254 - m Ta=25‘ C , *EP(iTc=25°C 2SD1746 fôT 2SD1747 2SD1747A fâT 2SD1748 2SD1748A VcBO VcEO (V) (V) Iccdc) (A) Pc Pci (W) (W) ICBO. (max) Cí¿A) VcB (V) % (min) Kl & 14 (Ta=25tC ) hF E (max) V'cE (V) [*EPIàtypii] VcE(sat \iîiax^ (V) iC/ 1E (A)
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2SD1746
2SD1747
2SD1747A
2SD1748
2SD1748A
2SD1749
2SD1749A
2SB1183
SC-63
2SD1759F5
2SD1761
2S01761
2sd1764
2sb117
2SD1760F5
2SD1747
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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2SD2101
Abstract: 2SD1756
Text: HITACHI 2SD2101 — — S ilicon NPN T rip le D iffused Low Frequency Pow er A m p lifie r Absolute M axim um Ratings Ta = 25°C Ite m S y m b o l R a tin g U n it C o lle cto r to base voltage V CBO 200 V C o lle cto r to em itter voltage V CEO 200 V Em itter to base voltage
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2SD2101-
O-220FM
150fi
2SD2101
2SD1756.
2SD2101
2SD1756
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transistor 2sk
Abstract: transistor sp-10 4ac14 2SK157 transistor 2sk 70 2sj318 transistor 2sk 12 2SK2851 4AC14 TRANSISTOR 2sK 135 K 2796
Text: POWER TRANSISTOR •General switching Darlington transistor Characteristics tire 7.5 1 k - 20 k 6.0 1 k - 20 k 6.0 1 k - 20 k 8.0 1 k - 20 k 9.0 150011.5 500l_ 16.0 1 k -2 0 k 5.0 1 k -2 0 k 4.0 1 k -2 0 k 3.1 1 k -2 0 k 4.0 1 k -2 0 k 3.0 15006.0 1 k - 20 k
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2SD16
2SD1603
2SD1604
2SD1605
2SD1606
2SD1756
2SD1976
2SB1389
2SB1390
2SB1391
transistor 2sk
transistor sp-10 4ac14
2SK157
transistor 2sk 70
2sj318
transistor 2sk 12
2SK2851
4AC14
TRANSISTOR 2sK 135
K 2796
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Untitled
Abstract: No abstract text available
Text: 2SD2101 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier Outline TO -220FM sS êl K|i 23 i j l 2 î 1. Base 2. C ollector 3. Emitter T S 3kQ Typ 150 Q (Typ) ¿ 3 2SD2101 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Rating
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2SD2101
-220FM
D-85622
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Untitled
Abstract: No abstract text available
Text: 2SD2101 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier Outline TO -220FM 2SD2101 Absolute Maximum Ratings Ta = 25 °C Item Symbol Rating Unit Collector to base voltage ^G B G 200 V Collector to em itter voltage VCE0 200 V Emitter to base voltage
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2SD2101
-220FM
2SD1756.
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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