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    2SD1749 Search Results

    2SD1749 Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD1749 Panasonic NPN Transistor Darlington Original PDF
    2SD1749 Panasonic Silicon NPN triple diffusion planar type Darlington Original PDF
    2SD1749 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SD1749 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1749 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD1749 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD1749A Panasonic Silicon NPN triple diffusion planar type Darlington Original PDF
    2SD1749A Panasonic NPN Transistor Darlington Original PDF
    2SD1749A Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SD1749A Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD1749A Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1749A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD1749A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD1749AP Panasonic Silicon NPN Triple Diffusion Planar Type Darlington Power Transistor Original PDF
    2SD1749AQ Panasonic Silicon NPN Triple Diffusion Planar Type Darlington Power Transistor Original PDF
    2SD1749P Panasonic Silicon NPN Triple Diffusion Planar Type Darlington Power Transistor Original PDF
    2SD1749Q Panasonic Silicon NPN Triple Diffusion Planar Type Darlington Power Transistor Original PDF

    2SD1749 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1749, 2SD1749A Silicon NPN triple diffusion planar type darlington Unit : mm 7.0±0.3 3.0±0.2 2.0±0.2 Symbol Rating Unit VCBO 60 V 2SD1749 2SD1749A 0.9±0.1 0˚ to 0.15˚


    Original     		PDF 2002/95/EC) 2SD1749, 2SD1749A 2SB1179 2SB1179A 2SD1749 2SD1749A

    2sb1749

    Abstract: No abstract text available
    Text: Power Transistors 2SD1749, 2SD1749A Silicon NPN triple diffusion planar type darlington Unit : mm 7.0±0.3 3.0±0.2 2.0±0.2 Symbol Rating Unit VCBO 60 V 2SD1749 2SD1749A VCEO Emitter-base voltage Collector open 60 0.9±0.1 0˚ to 0.15˚ 2.3±0.2 4.6±0.4


    Original     		PDF 2SD1749, 2SD1749A 2SB1179 2SB1179A 2SD1749 2SD1749A 2sb1749

    2SB1179

    Abstract: 2SB1179A 2SD1749 2SD1749A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1749, 2SD1749A Silicon NPN triple diffusion planar type darlington Unit : mm 3.0±0.2 2.0±0.2 2SD1749 2SD1749A Collector-emitter voltage 2SD1749 (Base open) 2SD1749A Emitter-base voltage (Collector open)


    Original     		PDF 2002/95/EC) 2SD1749, 2SD1749A 2SD1749 2SB1179 2SB1179A 2SD1749 2SD1749A

    2SD1749

    Abstract: 2SD1749A 2SB1179 2SB1179A
    Text: Power Transistors 2SD1749, 2SD1749A Silicon NPN triple diffusion planar type darlington Unit : mm 7.0±0.3 3.0±0.2 2.0±0.2 Symbol Rating Unit VCBO 60 V 2SD1749 2SD1749A 0.9±0.1 0˚ to 0.15˚ 2.3±0.2 4.6±0.4 1 80 60 0.75±0.1 0.4±0.1 1.0±0.2 Parameter


    Original     		PDF 2SD1749, 2SD1749A 2SD1749 2SD1749 2SD1749A 2SB1179 2SB1179A

    2SB1179

    Abstract: 2SB1179A 2SD1749 2SD1749A
    Text: Power Transistors 2SD1749, 2SD1749A Silicon NPN triple diffusion planar type Darlington For low-freauency power amplification Complementary to 2SB1179 and 2SB1179A 7.0±0.3 • Absolute Maximum Ratings +0.3 0.8±0.2 1.1±0.1 1.0±0.2 ● High foward current transfer ratio hFE


    Original     		PDF 2SD1749, 2SD1749A 2SB1179 2SB1179A 2SD1749 2SB1179A 2SD1749 2SD1749A

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1749, 2SD1749A Silicon NPN triple diffusion planar type darlington Unit : mm 7.0±0.3 3.0±0.2 2.0±0.2 Symbol Rating Unit VCBO 60 V 2SD1749 2SD1749A 0.9±0.1 0˚ to 0.15˚


    Original     		PDF 2002/95/EC) 2SD1749, 2SD1749A 2SB1179 2SB1179A 2SD1749 2SD1749A

    2SB1179

    Abstract: 2SB1179A 2SD1749 2SD1749A
    Text: Power Transistors 2SD1749, 2SD1749A Silicon NPN triple diffusion planar type Darlington For low-freauency power amplification Complementary to 2SB1179 and 2SB1179A 7.0±0.3 • Absolute Maximum Ratings +0.3 0.8±0.2 1.1±0.1 1.0±0.2 ● High foward current transfer ratio hFE


    Original     		PDF 2SD1749, 2SD1749A 2SB1179 2SB1179A 2SD1749 2SB1179A 2SD1749 2SD1749A

    Untitled

    Abstract: No abstract text available
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Pb High forward current transfer ratio hFE Lead-free which has satisfactory linearity. z High speed switching. z Complementary to 2SD1749. 2SA1179 APPLICATIONS z For power application and switching.


    Original     		PDF 2SA1179 2SD1749. OT-23 BL/SSSTC093

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    2N5657 equivalent

    Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.


    Original     		PDF 2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes

    MJE494

    Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS


    Original     		PDF BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037

    2SD669 equivalent

    Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc


    Original     		PDF 2N6609 2N3773) 2N6667 2N6668 220AB 2N6387, 2N6388 2SD669 equivalent BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544

    2SC495

    Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink


    Original     		PDF MJF6107 2N6107 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC495 NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar

    D42C5

    Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is


    Original     		PDF MJE16204 MJE16204 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C D42C5 transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220

    mje521 equivalent

    Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry


    Original     		PDF MJE521 MJE371 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C mje521 equivalent BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100

    2N3055

    Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes


    Original     		PDF MJE2955T MJE3055T TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N3055 BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64

    Darlington pair IC high current

    Abstract: panasonic 2SD 2sd darlington
    Text: 2SD1749, 2SD1749A Power Transistors 2SD1749, 2SD1749A Package Dim ensions U n it ' m m Silicon NPN Triple-Diffused Planar Darlington Type A F Power Amplifier Com plem entary Pair with 2SB1179, 2SB1179A • Features • High DC cu rre n t gain Ii f e • High speed sw itching


    OCR Scan     		PDF 2SD1749, 2SD1749A 2SB1179, 2SB1179A 12mAt 001b64b Darlington pair IC high current panasonic 2SD 2sd darlington

    2SD1749

    Abstract: 2SB1179 2SB1179A 2SD1749A
    Text: 2SD1749, 2SD1749A Power Transistors 2SD 1749, 2SD 1749A P a c k a g e D im e n s io n s Unit 1 mm Silicon NPN Triple-Diffused Planar Darlington Type A F P o w e r A m p lifier C o m p le m e n ta ry P air with 2 S B 1 1 7 9 , 2 S B 1 1 7 9 A • F e a tu re s


    OCR Scan     		PDF 2SD1749, 2SD1749A 2SDI749A 2SB1179, 2SB1179A 2sd1749 2SB1179 2SB1179A 2SD1749A

    nec 2sc3157

    Abstract: 2SD999 2SD1296 2SD1317 2SD1406 2sc3694 2SC3760 2SD2061 2sd2239 nec 1678
    Text: - 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SO 2SD 2SD 1669 y 1673 1676 — ' 1677 1678 1680 1682 ^ 1683 " 1684 •* 1685 1686 □ — A = * = = n n M. 2 TOSHIBA B m NEC ±L HITACHI 2SD1622 2SC2883 2SD1406 2SC3299 2SD1412 2SD1435K 2SD136S 2SD1662 fó T -E m 2SC3419


    OCR Scan     		PDF 2SD1660 2SD1198A 2SD1198A 2SD1622 2SD1631 2SC2883 2SD1406 2SC3299 2SD1412 2SD1296 nec 2sc3157 2SD999 2SD1317 2sc3694 2SC3760 2SD2061 2sd2239 nec 1678

    2SD2334

    Abstract: 2sc4814 2SD2076 2216y 2SD1546 2sd2190 2SD1930 2SD1755 2sc2562 2SC4062
    Text: - m. £ € Manuf. T y p e No. 2 SD 2174 fâ 2SD 2175 □— A 2SD 2176 - # h SANYO T 2SC4488 M 3E TO S H I B A m B NEC 2SC3677 2SD1593 2SC3665 2SD1312 B HITACHI ÎL * ± a FU JITSU tö T MATSUS H I T A z m MITSUBISHI T 2SD 2185 fe' T 2S0 2186 □— A 2SD 2187


    OCR Scan     		PDF 2SD2174 2SD2175 2SD2176 2SD2177 2SD2185 2SD2186 2SD2187 2SD2188 2SD2189 2SD2190 2SD2334 2sc4814 2SD2076 2216y 2SD1546 2SD1930 2SD1755 2sc2562 2SC4062

    4336

    Abstract: 2SC4846 2SD1634 4339 2SC3303 2SC3346 4327 2SC2735 2SC2847 2SC3142
    Text: m « tt T y p e No. 2SC 4324 2SC 4325 2SC 4326 H € ✓ & SANYO Manuf. x s x s 2SC4871 □ —A 2SC3142 S TOSHIBA m. b NEC B ±L HITACHI g ± FU J I T S U m të T MA T S U S H I T A 2SC2735 2SC2847 2SD1412 2SD1444 2SC 4328 S a 2SC3258 2SC3869 2SC 4329


    OCR Scan     		PDF 2SC4324 2SC4325 2SC4326 2SC4327 2SC4328 2SC4329 2SC4330 2SC4095 2SC4871 2SC3142 4336 2SC4846 2SD1634 4339 2SC3303 2SC3346 4327 2SC2735 2SC2847

    2sd1878

    Abstract: 2sd2339 2SD1876 2SD2333 2SC3887A 2SD1545 2SD2009 2SC3887 T M 2313 2SD1431
    Text: - 264 - m « tt € Type No. Manuf. SANYO ÍL ÍL ±L ÍL 2SD1403 « 2SD1841 2SD 2298 2SD 2299 2SD 2300 2SD 2301 2SD 2302 « ± 2SD 2303 « d t« m±wM 2SD 2304 n = 36 2 TOSHIBA 2SC3887A m NEC B ÍI HITACHI ± Ü FU JITSU fâ T MATSUSHITA 2SD1274D ZSU56Ö


    OCR Scan     		PDF 2SD2298 2SD2299 2SD2300 2SD2301 2SD2302 2SD2303 2SD2304 2SD2305 2SD2306 2SD2307 2sd1878 2sd2339 2SD1876 2SD2333 2SC3887A 2SD1545 2SD2009 2SC3887 T M 2313 2SD1431

    2SD1570

    Abstract: 2SD1488 2SD412 2SD411 1116 1141A 2SC3293 2sd1033 2sd1193 2sd1323
    Text: - 234 - m % Type No. tt 2 SD 1 2 1 2 * - H 2 SD 1 213 ^ = 2 SD 1 2 1 4 ^ fé fé fé fé 2 SD 1215 2 SD 1216 2 SD 1 217 ~« n 1 91 «- * 2 SD 1 21 9 ^ 2 SD 1 22 0 n T m T 2SD1393 T 7SD139S fé T - m *£ j£ 2 SD 1 22 3 y m ^ M 2 SD 1 22 5 / □ - A 2 SD 1 2 26


    OCR Scan     		PDF 2SD1443 2SD1707 2SC3293 2SD1322 2SD1323 2SD1324 2SD1393 2SD1481 2SD1521 2SD1325 2SD1570 2SD1488 2SD412 2SD411 1116 1141A 2SC3293 2sd1033 2sd1193 2sd1323