smd npn darlington
Abstract: 2SD1611
Text: Transistors SMD Type Silicon NPN Triple Diffusion Planar Type Darlington 2SD1611 TO-252 +0.15 1.50 -0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15 0.127 max 3 .8 0 +0.15 5.55 -0.15 +0.1 0.80-0.1 +0.25
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2SD1611
O-252
smd npn darlington
2SD1611
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2SD1616
Abstract: 2SD16116 2SD1616A 2sd1616 datasheet
Text: 2SD1616 2SD1616A NPN Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 ABSOLUTE MAXIMUM RATINGS Ta=25 C Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VCEO VCBO VEBO IC 2SD16116 50 60 2SD1616A
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2SD1616
2SD1616A
2SD16116
2SD1616
2SD16116
2SD1616A
2sd1616 datasheet
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Untitled
Abstract: No abstract text available
Text: Transistors SMD Type Product specification 2SD1611 TO-252 +0.15 1.50 -0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 0.127 max 3 .8 0 +0.15 5.55 -0.15 +0.1 0.80-0.1 +0.25 2.65 -0.1 High collector-base voltage Emitter open VCBO
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2SD1611
O-252
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1611 Silicon NPN triple diffusion planar type darlington Unit: mm 1.0±0.1 • Absolute Maximum Ratings TC = 25°C Symbol Rating Unit Collector-base voltage (Emitter open)
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2002/95/EC)
2SD1611
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2SD1611
Abstract: IC51
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1611 Silicon NPN triple diffusion planar type darlington Unit: mm 6.0±0.2 1.0±0.1 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)
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2002/95/EC)
2SD1611
2SD1611
IC51
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2SD1611
Abstract: DSA003793
Text: Power Transistors 2SD1611 Silicon NPN triple diffusion planar type Darlington ● 1.5±0.1 10.0±0.3 1.0±0.1 1.1max. 2.0 1.5max. High foward current transfer ratio hFE High collector to base voltage VCBO N type package enabling direct soldering of the radiating fin to
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2SD1611
2SD1611
DSA003793
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2SD1611
Abstract: No abstract text available
Text: Power Transistors 2SD1611 Silicon NPN triple diffusion planar type darlington Unit: mm 1.0±0.1 • Absolute Maximum Ratings TC = 25°C Symbol Rating Unit Collector-base voltage Emitter open Collector-emitter voltage (Base open) VCBO 500 V VCEO 400 V Emitter-base voltage (Collector open)
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2SD1611
2SD1611
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1611 Silicon NPN triple diffusion planar type darlington Unit: mm 1.0±0.1 • Absolute Maximum Ratings TC = 25°C Symbol Rating Unit Collector-base voltage (Emitter open)
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2002/95/EC)
2SD1611
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2SD1611
Abstract: No abstract text available
Text: Power Transistors 2SD1611 Silicon NPN triple diffusion planar type Darlington ● 1.5±0.1 10.0±0.3 1.0±0.1 1.1max. 2.0 1.5max. High foward current transfer ratio hFE High collector to base voltage VCBO N type package enabling direct soldering of the radiating fin to
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2SD1611
2SD1611
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
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2SD1616
Abstract: No abstract text available
Text: 2SD1616 2SD1616A NPN Transistors TO-92 * “G” Lead Pb -Free 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VCEO VCBO VEBO IC
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2SD1616
2SD1616A
2SD16116
2SD1616
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2SD1611
Abstract: 2SD16H package s4t
Text: Power T ransistors 2SD 1611 2SD1611 Silicon Triple-Diffused Planar Darlington Type P ow e r Am plifier P ackage D im ension s • Fe a tu res • High DC cu rren t gain I if e • High collector-base voltage ( V Cbo ) • “N T ype" package configuration with a cooling fin for direct soldering
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2SD1611
DDlb77S
2SD1611
2SD16H
package s4t
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SD1611 2SD1611 Silicon Trip le -D iffu se d Planar Darlington Type P ack age D im ension s P ow e r A m plifier U n i t 1 mm • Fe a tu re s • H igh D C c u r re n t gain 3.7m ax 8 .7 m ax . 1^1 Ii f e • High c o lle c to r-b a s e v o ltag e
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2SD1611
001fc
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transistor a2160
Abstract: transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mn15151 mini circuits 15542 A1270 Y AN 5606K
Text: Type Number List • Integrated Circuits MOS LSIs M O S L S Is Page Type No, M N 5117 M N171605 32,42 AM N18P83221 43 M N 3671A 62 M N 5126 87 43 M N 3672 62 M N 5128 87 37 ,4 4,45 46 M N 1256 46 M N 1258 46 M N 1259 46 M N12861 46 M N 12862 46 M N 187124
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N12861
N13801
MN1381
N13811
N13821
N150402
15P0802
N150412
MN15151
MN152121
transistor a2160
transistor A1270
A1270 transistor
transistor 2sD 4515
1431T transistor
transistor A769
mini circuits 15542
A1270 Y
AN 5606K
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3866S
Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
Text: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series
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1020G
N12861
N12B62
MN1381
MN13811
MN13821
15P0802
15P5402
58851A
70803A
3866S
transistor a999
bs 7818 -1995
transistor tt 2206
A999 transistor
TT 2206 transistor
a1535A
8340UAS
transistor 3866S
2SD 4515
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D2375
Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Text: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A
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125mW
2SC4627
2SC5021
2SA1790
2SC4626
2SC4655
2SC4809
2SC5295
2SC4808
2SA1806
D2375
D1259A
d1267a
D1265A
transistor 2SA1949
2sd2328a
TRANSISTORS SELECTION GUIDE
D1261A
C3795
2SB1526
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B1548
Abstract: 2SB1299A
Text: Transistors Selection Guide by Applications and Functions • Silicon Power Transistors Application Functions VcEO lc (V) (A) lc !b (V) (A) (mA) T0-220(a) (D56) NPN TO-220F (D59) PNP ; NPN 1 < l 1 125 2SB954/A 60/80 2 < 2 2 200 2SB1052 < 1 2 400 < 1 2 200
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T0-220
O-220F
2SB954/A
2SB1052
2SD1480
2SD1265/A
O-220E
T0220D
2SB1169/A
2SB1170
B1548
2SB1299A
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B938A
Abstract: B939A 2SK1967 2SD1316
Text: N Type Package h Transistors Outline U n it I mm 6.7max 3.7max 6 5max ,1.1 ma» mm. m N5Ü' 'f "j 'T - v U s « S <D7V> h £454' ä IZ m & m à 7 1 0 - 220« ^ « ^ li lJj j J 7 7 f 7 ^ ' ^ - v T ' î o • f t fi5i.8.4 S r I ; -Ö- 08±0, RO.S/^i ! I R 0.5
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O-220
2SK1967-
2SK782-
2SK1308/A-
2SK1846-
B938A
B939A
2SK1967
2SD1316
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2sd2520
Abstract: 2SD2501 2SD2502 2sD2503 2SD1327 2SD1755
Text: Transistors Selection Guide by Applications and Functions •Silicon Power Transistors (continued) Applica tion Func tions V ceo (V) lc (A) Package (No.) VcE(sat) typ. (V) lc Ib TO-220(a) (D52) T0-220F(D55) T0-220E(D59) T0-220D(D58) N Type (D42) PNP
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O-220
T0-220F
T0-220E
T0-220D
2SD1719
2SD1775/A
2SD1755
2SB1195
2SD1634
2SD1336/A
2sd2520
2SD2501
2SD2502
2sD2503
2SD1327
2SD1755
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2SD2502
Abstract: 2sd2520 2sD2503 2SD2375 2SD1755 zener 3,5 2SD1474 2SD1719 2SD2158 T0-220F
Text: Transistors Selection Guide by Applications and Functions • Silicon Pow er T ransistors (continued) Applica V ceo tion Func (V) tions Pa ckage (No.) VcE(sat) lc (A) typ. (V) lc Ib T0-220(a) (D56) (A) (mA) NPN T 0 -2 2 0 F (D 5 9 ) T 0 -2 2 0 E (D 6 3 )
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T0-220
T0-220F
T0-220E
T0220D
2SD1474
2SD1719
2SD1755
2SD1776/A
2SD1775/A
2SD2158
2SD2502
2sd2520
2sD2503
2SD2375
2SD1755
zener 3,5
2SD1474
2SD1719
2SD2158
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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AN3962FB
Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030
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MN101C01C
MN101C01D
MN101C025
MN1020003
MN1020004A
MN1020004AFB
MN1020012A
MN1020
12AFA
MN1020015
AN3962FB
MN1880023
mn19412
MN1874033
IC AN7135
an3814k
MN1883214
an8294nsb
mn4117405
mn171202
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Untitled
Abstract: No abstract text available
Text: Transistors Selection Guide by Applications and Functions • Silicon Power Transistors (continued) Applica V ceo tion Func (V) tions High hre lc (A) Pa ckage (No.) VcE(sat) typ. (V) lc Ib (A) (mA) T0-220(a) (D56) NPN T 0 -2 2 0 F (D 5 9 ) T 0 -2 2 0 E (D 6 3 )
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T0-220
2SD1474
2SD1776/A
2SD2158
2SD1775/A
2SD1719
2SD1336/A
2SB1108
2SB1193
2SD1608
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