D1223
Abstract: No abstract text available
Text: 2SD1223 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1223 Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
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2SD1223
2SB908.
D1223
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D1223
Abstract: 2SB908 2SD1223
Text: 2SD1223 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1223 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
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2SD1223
2SB908.
D1223
2SB908
2SD1223
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Untitled
Abstract: No abstract text available
Text: 2SD1223 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1223 Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
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2SD1223
2SB908.
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Untitled
Abstract: No abstract text available
Text: 2SD1223 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1223 Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
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2SD1223
2SB908.
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d1223
Abstract: 2SD1223 2SB908
Text: 2SD1223 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1223 Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
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2SD1223
2SB908.
d1223
2SD1223
2SB908
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d1223
Abstract: 2SB908 2SD1223
Text: 2SD1223 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1223 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
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2SD1223
2SB908.
d1223
2SB908
2SD1223
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Untitled
Abstract: No abstract text available
Text: 2SD1223 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1223 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
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2SD1223
2SB908.
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SD1223 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (darlington) 2SD1223 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)
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2SD1223
2SB908.
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D1223
Abstract: A4503 2SD1223 2SB908
Text: 2SD1223 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (darlington) 2SD1223 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) · Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)
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2SD1223
2SB908.
D1223
A4503
2SD1223
2SB908
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Power MOLD
Abstract: 2SC3303 TE16L 2SC380 2sc3233 STA1100 2sc3072
Text: contents www search print index quit Small Signal Devices ➔ ➔ • Surface Mount Products D-PACK POWER MOLD 23.1 23.2 23.3 Small Signal Devices TO S H I B A contents www search print index quit Small Signal Devices ➔ ➔ ■ Surface Mount Products D-PACK (POWER MOLD)
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2SC3075
2SC3405
2SD1220
2SC2983
2SD1160
2SC3233
2SD1221
2SC3805
2SC4203
2SC3076
Power MOLD
2SC3303
TE16L
2SC380
STA1100
2sc3072
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Untitled
Abstract: No abstract text available
Text: 2SB908 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB908 Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE (1) = 2000 (min) (VCE = −2 V, IC = −1 A) •
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2SB908
2SD1223
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3A 100V npn LOW SATURATION VOLTAGE
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SD1223 SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. POWER AMPLIFIER APPLICATIONS. Unit in mm &8MAX. FEATURES: . High DC Current Gain : hFE=2000(Min.) (VCE=2V, Ic=lA) . Low Saturation Voltage
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2SD1223
2SB908.
3A 100V npn LOW SATURATION VOLTAGE
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2SD1223
Abstract: 2SD1223 Q 2SB908
Text: TO SH IBA TOSHIBA TRANSISTOR SWITCHING APPLICATIONS 2SD1223 SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) 2 S D 1 223 HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS POWER AMPLIFIER APPLICATIONS • • • High DC Current Gain : ^FE (1) - 2000 (Min.)
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2SD1223
2SB908.
2SD1223
2SD1223 Q
2SB908
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2SD1223
Abstract: 2SB908
Text: 2SD1223 TOSHIBA TOSHIBA TRANSISTOR SWITCHING APPLICATIONS 2 S D 1 223 SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS POWER AMPLIFIER APPLICATIONS • • • High DC Current Gain : ^FE (1) - 2000 (Min.) Low Saturation Voltage : V q ^ (sat) = 1.5 V (Max.)
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2SD1223
2SB908.
2SD1223
2SB908
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TOSHIBA TRANSISTOR SWITCHING APPLICATIONS 2SD1223 2 S D 1 223 SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS POWER AMPLIFIER APPLICATIONS High DC Current Gain : hfE (1) = 2000 (Min.) Low Saturation Voltage : V çe (sat) = 1-5 V (Max.)
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2SD1223
2SB908.
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SD1223 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) 2 S D 1 223 SWITCHING APPLICATIONS U n it in mm H AM M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS PO W ER AM PLIFIER APPLICATIONS H ig h D C C urrent G ain : h p E (1) = 2000 (M in .)
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2SD1223
2SB908.
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te 1819
Abstract: 2SD1878 2SC4211 2SD1649 2sd1856 1815 2SC4723 2sd1707 2SD1929 2SC4331
Text: - a ¡g tt £ Manuf. Type So. H £ SANVO 2SD1667 IE TOSHIBA Q m jtec 2SD1406 ÍL HITACHI Ü ± il FUJITSU T MATSUSHITA 2SD2107 2SD1267 2SD2105 2SD1445A o MITSUBISHI 251 A ROHM 2SÜ1778 2SD 1813 ¡L 2SD 1814 S AI 2SD 1815 J = ft 2SD 1816 / = n 2SD 1817 X =
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2SD1813
2SD1814
2SD1667
2SD1406
2SD2107
2SD2105
2SD1267
2SD1445A
2SD1250
2SC4331
te 1819
2SD1878
2SC4211
2SD1649
2sd1856
1815
2SC4723
2sd1707
2SD1929
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Untitled
Abstract: No abstract text available
Text: SILICON PNP EPITAXIAL TYPE 2SB908 SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. POWER AMPLIFIER APPLICATIONS. Unit in mm FEATURES: . High DC Current Gain : hFE l =2000(Min.) (VCE=-2V, IC=-1A) . Low Saturation Voltage : ^CE(sat)“-1•^(Max.) (IC=-3A)
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2SB908
2SD1223.
13ASE
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Untitled
Abstract: No abstract text available
Text: SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS -2SB908 U nit in mm SW ITCHING APPLICATIONS. H A M M E R DRIVE, PULSE M O T O R DRIVE APPLICATIONS. POW ER AMPLIFIER APPLICATIONS. • • • I High DC Current Gain : h F E ( l ) = 2000(M in.)(V cE =—2V, Ic = - 1 A )
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-2SB908
2SD1223.
15OLLECTOR-EMITTER
2SB908
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2SB908
Abstract: 2SD1223
Text: TOSHIBA 2SB908 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SB908 SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS POWER AMPLIFIER APPLICATIONS • • • High DC Current Gain : hFE(i) = 2000 (Min.) (VCE = —2 V, IC = —1 A)
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2SB908
2SD1223.
2SB908
2SD1223
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SB908 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SB908 Unit in mm SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS POWER AMPLIFIER APPLICATIONS • • • High DC Current Gain : hFE (i) = 2000 (Min.) (VCE = - 2 V, IC = - 1 A)
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2SB908
2SD1223.
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2SB908
Abstract: 2SD1223
Text: TO SH IBA 2SB908 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SB908 SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS POWER AMPLIFIER APPLICATIONS • • • High DC Current Gain : hFE(i) = 2000 (Min.) (VCE = —2 V, IC = —1 A)
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2SB908
2SD1223.
2SB908
2SD1223
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2SB908
Abstract: No abstract text available
Text: T O SH IB A 2SB908 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SB908 SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. POWER AMPLIFIER APPLICATIONS. Unit in mm • High DC Current Gain : hF E (l) = 2000 (Min.) (VCE = -2 V , IC = - 1 A )
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2SB908
2SD1223.
50X50
2SB908
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2SB908
Abstract: 2SD1223
Text: TO SH IBA 2SB908 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SB908 SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS POWER AMPLIFIER APPLICATIONS • • • High DC Current Gain : hFE(i) = 2000 (Min.) (VCE = —2 V, IC = —1 A)
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2SB908
2SD1223.
2SB908
2SD1223
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