d1222
Abstract: 2sd1222 equivalent 2sD1222 2SB907
Text: 2SD1222 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (darlington) 2SD1222 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 2 A)
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2SD1222
2SB907.
15transportation
d1222
2sd1222 equivalent
2sD1222
2SB907
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D1222
Abstract: 2SB907 2SD1222
Text: 2SD1222 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1222 Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
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2SD1222
2SB907.
D1222
2SB907
2SD1222
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Untitled
Abstract: No abstract text available
Text: 2SD1222 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1222 Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
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2SD1222
2SB907.
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D1222
Abstract: 2SB907 2SD1222
Text: 2SD1222 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1222 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
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2SD1222
2SB907.
D1222
2SB907
2SD1222
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d1222
Abstract: No abstract text available
Text: 2SD1222 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1222 Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
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Original
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2SD1222
2SB907.
d1222
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SD1222 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1222 Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
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2SD1222
2SB907.
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D1222
Abstract: 2SB907 2SD1222
Text: 2SD1222 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1222 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
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2SD1222
2SB907.
D1222
2SB907
2SD1222
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D1222
Abstract: 2SD1222 2SB907
Text: 2SD1222 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (darlington) 2SD1222 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) · Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 2 A)
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Original
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2SD1222
2SB907.
15transportation
D1222
2SD1222
2SB907
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transistor B907
Abstract: B907 2SB907 2SD1222
Text: 2SB907 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB907 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE (1) = 2000 (min) (VCE = −2 V, IC = −1 A) •
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2SB907
2SD1222.
transistor B907
B907
2SB907
2SD1222
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transistor B907
Abstract: B907 024 marking code 2SB907 2SD1222
Text: 2SB907 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB907 Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE (1) = 2000 (min) (VCE = −2 V, IC = −1 A) •
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2SB907
2SD1222.
transistor B907
B907
024 marking code
2SB907
2SD1222
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transistor B907
Abstract: No abstract text available
Text: 2SB907 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB907 Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE (1) = 2000 (min) (VCE = −2 V, IC = −1 A) •
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2SB907
2SD1222.
transistor B907
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SB907 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB907 Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE (1) = 2000 (min) (VCE = −2 V, IC = −1 A) •
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2SB907
2SD1222.
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transistor B907
Abstract: B907 2SB907 2SD1222
Text: 2SB907 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB907 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE (1) = 2000 (min) (VCE = −2 V, IC = −1 A) ·
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2SB907
2SD1222.
transistor B907
B907
2SB907
2SD1222
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TOSHIBA TRANSISTOR 2SD1222 SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) WÊÊF mmr SWITCHING APPLICATIONS. U n it in mm HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. 5.2+ 0.2 POWER AMPLIFIER APPLICATIONS. j E E if c lL . ö M AX J 0.6tf-
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2SD1222
2SB907.
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2SD1222
Abstract: 2sd1222 equivalent
Text: SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SD1222 SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. POWER AMPLIFIER APPLICATIONS. Unit in mm Cl6 MAX. FEATURES: . High DC Current Gain : hFE=2000(Min.) (VCE=2V, IC=1A) . Low Saturation Voltage
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2SD1222
2SB907.
2SD1222
2sd1222 equivalent
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PDF
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Untitled
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL TYPE 2SD1222 SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. POWER AMPLIFIER APPLICATIONS. Unit in mm FEATURES: . High DC Current Gain : ^FE i =2000(Min.) (Vq e =2V, Ic =1A) . Low Saturation Voltage •' VcE(sat)=l-5V(Max.) (Ic=2A)
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2SD1222
2SB907.
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2SB907
Abstract: 2SD1222
Text: 2SD1222 TOSHIBA TOSHIBA TRANSISTOR SWITCHING APPLICATIONS 2 S D 1 222 SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) Unit in mm (A) HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 6.8MAX., POWER AMPLIFIER APPLICATIONS • High DC Current Gain ; . • •
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2SD1222
95MAX.
2SB907.
2SB907
2SD1222
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SD1222 TOSHIBA TOSHIBA TRANSISTOR SWITCHING APPLICATIONS 2 S D 1 222 SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS POWER AMPLIFIER APPLICATIONS • • • High DC Current Gain : ^FE (1) - 2000 (Min.)
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2SD1222
2SB907.
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TOSHIBA TRANSISTOR SWITCHING APPLICATIONS 2SD1222 2 S D 1 222 SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) Unit in mm H A M M E R DRIVE, PULSE M O TOR DRIVE APPLICATIONS POWER AMPLIFIER APPLICATIONS • • • High DC Current Gain : h^E (1) = 2000 (Min.)
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2SD1222
2SB907.
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SD1222 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) 2 S D 1 222 SWITCHING APPLICATIONS U nit in mm H AM M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 6.8MAX. (A) 5.2 ±0.2 c PO W ER AM PLIFIER APPLICATIONS 0.6 i 0.15 • High DC Current Gain
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2SD1222
1V11I1W
2SB907.
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Untitled
Abstract: No abstract text available
Text: SILICON PNP EPITAXIAL TYPE 2SB907 SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. POWER AMPLIFIER APPLICATIONS. Unit in mm &8UAX. FEATURES: . High DC Current Gain : h F E l =2000(Min.) (VCE=~2V, IC=-1A) . Low Saturation Voltage : VcE(sat)=-l-5V(Max.) (Ic=-2A)
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2SB907
2SD1222.
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cfl low loss drive
Abstract: No abstract text available
Text: T O SH IB A 2SB907 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SB907 SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. POWER AMPLIFIER APPLICATIONS. Unit in mm & 8 MAX. 0.6 MAX. 5 .2 ± D .2 ÏZ • High DC Current Gain
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2SB907
2SD1222.
cfl low loss drive
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7550 - 1
Abstract: 2SB907 2SD1222
Text: TOSHIBA 2SB907 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SB907 Unit in mm SWITCHING APPLICATIONS H A M M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS PO W ER AM PLIFIER APPLICATIONS • High DC Current Gain : hpE(i) = 2000 (Min.) (V^E = -2 V , Iq
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2SB907
2SD1222.
7550 - 1
2SB907
2SD1222
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SB907 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SB907 SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS POWER AMPLIFIER APPLICATIONS • • • High DC Current Gain : hFE(i) = 2000 (Min.) (VCE = -2 V , IC = -1 A )
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2SB907
2SD1222.
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