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Amphenol Sine Systems AT06-2S-D1224VR CONN PLUG HSG 2POS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	AT06-2S-D1224VR	Box	143		1	1 $10.91 10 $8.891 100 $7.7076 1000 $6.45 10000 $6.45	Buy Now
Newark	AT06-2S-D1224VR	Bulk	45		1	1 $4.39 10 $4.39 100 $4.39 1000 $4.39 10000 $4.39	Buy Now
RS	AT06-2S-D1224VR	Bulk		20 Weeks	200	1 - 10 - 100 - 1000 $9.58 10000 $9.58	Get Quote
Interstate Connecting Components	AT06-2S-D1224VR		3			1 $8.275 10 $8.275 100 $7.7305 1000 $6.1714 10000 $6.1714	Buy Now
Waytek, Inc.	AT06-2S-D1224VR		885		1	1 $9.2 10 $7.7 100 $6.64 1000 $6.25 10000 $6.25	Buy Now
Amphenol Sine Systems AT06-2S-D1224V CONN PLUG HSG 2POS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	AT06-2S-D1224V	Bulk	65		1	1 $14.3 10 $10.989 100 $9.221 1000 $6.83236 10000 $6.83236	Buy Now
Newark	AT06-2S-D1224V	Bulk			200	1 - 10 - 100 $10.03 1000 $8.85 10000 $8.85	Buy Now
RS	AT06-2S-D1224V	Bulk		20 Weeks	200	1 - 10 - 100 - 1000 $8.98 10000 $8.98	Get Quote
Interstate Connecting Components	AT06-2S-D1224V		154			1 $7.5491 10 $7.5491 100 $7.0524 1000 $7.6301 10000 $7.6301	Buy Now
Powell Electronics	AT06-2S-D1224V		660		200	1 - 10 - 100 - 1000 $6.875 10000 $6.875	Buy Now

Waytek, Inc.	AT06-2S-D1224V		325		1	1 $9.2 10 $7.7 100 $6.64 1000 $6.25 10000 $6.25	Buy Now
Toshiba America Electronic Components 2SD1221-Y(Q) TRANS NPN 60V 3A PW-MOLD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SD1221-Y(Q)	Bulk			200	1 - 10 - 100 - 1000 $0.5569 10000 $0.5569	Buy Now
MIL SPEC CONNECT S2SD-12-26-L-04.00-S 2.00 MM TIGER EYE DOUBLE ROW DIS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	S2SD-12-26-L-04.00-S				5	1 - 10 $17.167 100 $17.608 1000 $15.91136 10000 $15.91136	Buy Now
Samtec Inc S2SD-12-26-L-04.00-S 2.00 MM TIGER EYE DOUBLE ROW DIS Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	S2SD-12-26-L-04.00-S	Bulk			1	1 $9.86 10 $9.86 100 $9.86 1000 $9.86 10000 $9.86	Buy Now
Mouser Electronics	S2SD-12-26-L-04.00-S					1 $9.86 10 $9.12 100 $7.2 1000 $6.09 10000 $6.09	Get Quote
Master Electronics	S2SD-12-26-L-04.00-S					1 - 10 $12.24 100 $7.83 1000 $6.41 10000 $6.41	Buy Now
Sager	S2SD-12-26-L-04.00-S				1	1 $9.86 10 $9.12 100 $7.2 1000 $6.83 10000 $6.83	Buy Now

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2SD122 Datasheets (130)

Part	Manufacturer	Description	Datasheet Type	PDF
2SD122	Fuji-SVEA	Japanese 2S Transistor Cross Reference Datasheet	Scan	PDF
2SD122	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SD122	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2SD122	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SD122	Unknown	Vintage Transistor Datasheets	Scan	PDF
2SD122	Unknown	Discontinued Transistor Data Book 1975	Scan	PDF
2SD122	Unknown	The Japanese Transistor Manual 1981	Scan	PDF
2SD122	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SD122	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SD122	Unknown	Cross Reference Datasheet	Scan	PDF
2SD1220	Kexin	Silicon NPN Epitaxial Transistor	Original	PDF
2SD1220	Toshiba	NPN Transistor	Original	PDF
2SD1220	TY Semiconductor	Silicon NPN Epitaxial Transistor - TO-252	Original	PDF
2SD1220	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF

2SD1220	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SD1220	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SD1220	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SD1220	Unknown	Cross Reference Datasheet	Scan	PDF
2SD1220	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SD1220	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF

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2SD122 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Transistors IC SMD Type Product specification 2SD1220 TO-252 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 Features 2.3 +0.1 0.60-0.1 3 .8 0 +0.15 5.55 -0.15 +0.25 2.65 -0.1 0.127 max +0.28 1.50 -0.1 +0.1 0.80-0.1 +0.15	Original	2SD1220 O-252 D1220	PDF
D1223 Abstract: 2SD1223 a4503 2SB908 Text: 2SD1223 シリコンNPNエピタキシャル形 PCT方式東芝トランジスタ 2SD1223 ○ スイッチング用 ○ ハンマドライブパルスモータドライブ用 ○ 電力増幅用単位: mm • 直流電流増幅率が高い。 : hFE = 2000 (最小) (VCE = 2 V, IC = 1 A)	Original	2SD1223 2SB908 20070701-JA D1223 2SD1223 a4503 2SB908	PDF
B906 Abstract: 2SB906 2SD1221 Text: 2SB906 TOSHIBA Transistor Silicon PNP Diffused Type PCT process 2SB906 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SD1221 Unit: mm : VCE (sat) = −1.0 V (typ.) (IC = −3 A, IB = −0.3 A)	Original	2SB906 2SD1221 B906 2SB906 2SD1221	PDF
d1222 Abstract: 2sd1222 equivalent 2sD1222 2SB907 Text: 2SD1222 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (darlington) 2SD1222 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 2 A)	Original	2SD1222 2SB907. 15transportation d1222 2sd1222 equivalent 2sD1222 2SB907	PDF
transistor B906 Abstract: 2SB906 7B1A B-906 B906 2SD1221 Text: 2SB906 TOSHIBA Transistor Silicon PNP Diffused Type PCT process 2SB906 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SD1221 • ハイブリッド対応外形の (B) 2SB906 (LB) もあります。	Original	2SB906 2SD1221 transistor B906 2SB906 7B1A B-906 B906 2SD1221	PDF
transistor B906 Abstract: B906 2SB906 2SD1221 B-906 Text: 2SB906 TOSHIBA Transistor Silicon PNP Diffused Type PCT process 2SB906 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SD1221 Unit: mm : VCE (sat) = −1.0 V (typ.) (IC = −3 A, IB = −0.3 A)	Original	2SB906 2SD1221 transistor B906 B906 2SB906 2SD1221 B-906	PDF
D1223 Abstract: 2SB908 2SD1223 Text: 2SD1223 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1223 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)	Original	2SD1223 2SB908. D1223 2SB908 2SD1223	PDF
D1220 Abstract: 2sd1220 2SB905 Text: 2SD1220 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SD1220 Power Amplifier Applications • Unit: mm Complementary to 2SB905 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 150 V Collector-emitter voltage	Original	2SD1220 2SB905 D1220 2sd1220 2SB905	PDF
D1224 Abstract: 2SD1224 Text: 2SD1224 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (darlington) 2SD1224 Pulse Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA)	Original	2SD1224 D1224 2SD1224	PDF
Untitled Abstract: No abstract text available Text: 2SD1223 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1223 Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)	Original	2SD1223 2SB908.	PDF
D1220 Abstract: 2sd1220 2SB905 Text: 2SD1220 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SD1220 Power Amplifier Applications • Unit: mm Complementary to 2SB905 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 150 V Collector-emitter voltage	Original	2SD1220 2SB905 D1220 2sd1220 2SB905	PDF
2SD1221 Abstract: No abstract text available Text: TOSHIBA TRANSISTOR 2SD1221 SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS AUDIO FREQUENCY POWER AMPLIFIER APPLICATION. Unit in mm FEATURES: . Low Collector Saturation Voltage : vCE(sat)=0.4V(Typ.) (Ic=3A, Ir =0.3A) . High Power Dissipation : Pc=20W (Tc=25°C)	OCR Scan	2SD1221 2SB906 2SD1221	PDF
Untitled Abstract: No abstract text available Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD1221 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION. Unit in mm FEATURES: . Low Collector Saturation Voltage : VcE sat =0.4V(Typ.) (Ic=3A, Ib =0.3A) . High Power Dissipation : Pc=20W (Tc=25°C) . Complementary to 2SB906 MAXIMUM RATINGS (Ta=25°C)	OCR Scan	2SD1221 2SB906 2SD122	PDF
B941 Abstract: B 941 2SD1224 Text: SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SD1224 PULSE MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. Unit in mm &8MAX. FEATURES : 1 . High DC Current Gain : hpE=¿*000(Min.) (Vc e =2V, Ic=150mA) . Low Saturation Voltage	OCR Scan	2SD1224 150mA) B941 B 941 2SD1224	PDF

2SD1225M Abstract: 2SD1225M Q TRANSISTORS sec 537 2SD1858 2SB909M 2sd1225 T2721 2SB1237 DU 9 Text: 2SD1225M/2SD1858 £ / J ransistors h 7 > v ROHM CO LTD 4 2S D 1225M 2S D 1858 T> m É S a 3 S a • R H v ' J a > h 7 > v X N ^ 4 , ^JiMlîlffl/M edium Power Amp. 7^27-2 ] Epitaxial Planar NPN Silicon Transistors VhMVlV’J i-r • WM■^■^0/Dimensions Unit : mm	OCR Scan	2SD1225M 2SD1858 150mV 500mA) 2SB909M/2SB12371 2SB909M, 2SB1237. 2SD1225M/2SD1858 2SD1225M Q TRANSISTORS sec 537 2SD1858 2SB909M 2sd1225 T2721 2SB1237 DU 9	PDF
Untitled Abstract: No abstract text available Text: SILICON PNP TRIPLE DIFFUSED TYPE 2SB906 Unit in inm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION. 68MAX. FEATURES : . Low Collector Saturation Voltage : V C E sat =-1.0V(Typ.) (Ic— 3A, IB =-0.3A) 5.2±0.2 j . High Power Dissipation : Pç=20W (Tc-25°C) . Complementary to 2SD1221	OCR Scan	2SB906 68MAX. Tc-25 2SD1221 -50mA,	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA 2SD1221 2 S D 1 221 T O SH IB A TRA NSISTO R SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm A U D IO FREQUENCY P O W ER AM PLIFIER A PPLICATIO N • • • Low Collector Saturation Voltage : v CE(sat) = °-4V (TyP-> High Power Dissipation : P0 = 20 W	OCR Scan	2SD1221 2SB906	PDF
2sd1220 Abstract: 2SB905 Text: 2SD1220 TO SH IBA TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 S D 1 220 Complementary to 2SB905 MAXIMUM RATINGS (Tc = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage v CBO Colleetor-Emitter Voltage v CEO	OCR Scan	2SD1220 2SB905 2sd1220	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA 2SD1221 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2 S D 1 221 AUDIO FREQUENCY PO W ER AM PLIFIER APPLICATION U nit in mm 6.8MAX. (A) • 5.2 Low Collector Saturation Voltage ±0.2 c J : V CE (sat) = °-4 v (Typ.) • High Power Dissipation : P q = 20 W	OCR Scan	2SD1221 2SB906	PDF
Untitled Abstract: No abstract text available Text: N ~7 > y 7 $ /Transistors 2SD1225M/2SD1858 '> 7 ^ 7 ° U - : J - B N P N y 'J=]> h 7 > y ^ ^ 2SD1225M 4i f,Bc 02^ 7* iillliffl/M e d iu m Power Amp. 2SD1858 Epitaxial Planar N PN Silicon Transistors SO- >4 VT.\' vjl - 7- • y \|- fj\r > S 0 /D \|m n s\|or>s U n it: mm)	OCR Scan	2SD1225M/2SD1858 2SD1225M 2SD1858 2SD1858 2SD1225M 500mA) 150mV 2SB909M, 2SB1237.	PDF
2SD1224 Abstract: No abstract text available Text: TO SH IBA TO SHIBA TRANSISTOR 2SD1224 SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) 2 S D 1 224 PULSE M OTOR DRIVE, H A M M ER DRIVE APPLICATIONS U n it in mm (A) SWITCHING APPLICATIONS 6.8MAX., 5.2 ±0.2 PO W ER A M PLIFIER APPLICATIONS 0.6 + 0.15	OCR Scan	2SD1224 95MAX. 2SD1224	PDF
2SB905 Abstract: 2SD1220 Text: TO SH IBA 2SB905 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SB905 Complementary to 2SD1220 MAXIMUM RATINGS (Tc = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage v CBO Colleetor-Emitter Voltage v CEO Emitter-Base Voltage	OCR Scan	2SB905 2SD1220 2SB905 2SD1220	PDF
2SD1224 Abstract: C2804 Text: TO SH IBA 2SD1224 TO SHIBA TRANSISTOR 2 S D 1 224 SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) PULSE M OTOR DRIVE, H A M M ER DRIVE APPLICATIONS U n it in mm (A) SWITCHING APPLICATIONS 6.8MAX., PO W ER A M PLIFIER APPLICATIONS 0.6 + 0.15 • High DC Current Gain	OCR Scan	2SD1224 95MAX. 2SD1224 C2804	PDF
NPN EPTAXIAL PLANAR Abstract: s915 2SD1227M 2SB911M Text: ROHM CO LTD NOE D ooosam h 7 > y 7s £ / T ransistors IRHM 3 2SD1227M/2SD1862 7^-2 7-2. / 2SD1227EVI X fcf £ v T7^ 7 ° U ~ ^ NPN v U □ > h 7 > V X i ? Power Amp. Eptaxial Planar NPN Silicon Transistors ^ O V lO O Z 1 P c = 1 W t * t l'o 2) VCE sat \|=160mV Typ. (at 1A)	OCR Scan	2SD1227EVI 160mV 2SB911M/2SB1240 2SD1227M/2SD1862 NPN EPTAXIAL PLANAR s915 2SD1227M 2SB911M	PDF

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2SD122 Search Results

2SD122 Price and Stock

Amphenol Sine Systems AT06-2S-D1224VR

Amphenol Sine Systems AT06-2S-D1224V

Toshiba America Electronic Components 2SD1221-Y(Q)

MIL SPEC CONNECT S2SD-12-26-L-04.00-S

Samtec Inc S2SD-12-26-L-04.00-S

2SD122 Datasheets (130)

2SD122 Datasheets Context Search

Untitled

D1223

B906

d1222

transistor B906

transistor B906

D1223

D1220

D1224

Untitled

D1220

2SD1221

Untitled

B941

2SD1225M

Untitled

Untitled

2sd1220

Untitled

Untitled

2SD1224

2SB905

2SD1224

NPN EPTAXIAL PLANAR