Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SD0662 Search Results

    2SD0662 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD0662 Panasonic Silicon NPN epitaxial planer type small signal transistor Original PDF
    2SD0662 Panasonic NPN Transistor Original PDF
    2SD0662 Panasonic Silicon NPN epitaxial planer type Original PDF
    2SD0662B Panasonic NPN Transistor Original PDF
    2SD0662B Panasonic Silicon NPN epitaxial planer type small signal transistor Original PDF
    2SD0662B Panasonic Silicon NPN epitaxial planer type Original PDF
    2SD0662BP Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF
    2SD0662BQ Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF
    2SD0662BR Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF
    2SD0662P Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF
    2SD0662Q Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF
    2SD0662R Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF

    2SD0662 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SD0662

    Abstract: 2SD0662B 2SD662 2SD662B specification of 555 ic
    Text: Transistor 2SD0662, 2SD0662B 2SD662, 2SD662B Silicon NPN epitaxial planer type For high breakdown voltage general amplification Unit: mm 2.5±0.1 • Absolute Maximum Ratings (Ta=25˚C) (1.0) (0.85) 0.45±0.05 Parameter Symbol 2SD0662 base voltage 2SD0662B


    Original
    PDF 2SD0662, 2SD0662B 2SD662, 2SD662B) 2SD0662 2SD0662 2SD0662B 2SD662 2SD662B specification of 555 ic

    2SD0662

    Abstract: 2SD0662B 2SD662 2SD662B
    Text: Transistors 2SD0662, 2SD0662B 2SD662, 2SD662B Silicon NPN epitaxial planar type For high breakdown voltage general amplification Unit: mm 2.5±0.1 2SD0662 Symbol Rating Unit VCBO 250 V 2SD0662B VCEO Emitter-base voltage (Collector open) VEBO Collector power dissipation


    Original
    PDF 2SD0662, 2SD0662B 2SD662, 2SD662B) 2SD0662 2SD0662 2SD0662B 2SD662 2SD662B

    Untitled

    Abstract: No abstract text available
    Text: Transistor 2SD0662, 2SD0662B 2SD662, 2SD662B Silicon NPN epitaxial planar type For high breakdown voltage general amplification Unit: mm 2.5±0.1 • Absolute Maximum Ratings (Ta=25˚C) (1.0) (0.85) 0.45±0.05 Parameter Symbol 2SD0662 base voltage 2SD0662B


    Original
    PDF 2SD0662, 2SD0662B 2SD662, 2SD662B) 2SD0662 2SD0662B

    2SD0662

    Abstract: 2SD0662B 2SD662 2SD662B
    Text: Transistor 2SD0662, 2SD0662B 2SD662, 2SD662B Silicon NPN epitaxial planer type For high breakdown voltage general amplification Unit: mm 6.9±0.1 1.0 0.85 Parameter (Ta=25˚C) Symbol Collector to 2SD0662 base voltage 2SD0662B Collector to 2SD0662 emitter voltage 2SD0662B


    Original
    PDF 2SD0662, 2SD0662B 2SD662, 2SD662B) 2SD0662 2SD0662 2SD0662B 2SD662 2SD662B

    2SD662B

    Abstract: ft 103 Vbe 8 V 2SD0662 2SD0662B 2SD662
    Text: Transistors 2SD0662, 2SD0662B 2SD662, 2SD662B Silicon NPN epitaxial planar type For high breakdown voltage general amplification Unit: mm 2.5±0.1 (1.0) Symbol Rating Unit VCBO 250 V 2SD0662B VCEO Emitter-base voltage (Collector open) VEBO Collector power dissipation


    Original
    PDF 2SD0662, 2SD0662B 2SD662, 2SD662B) 2SD662B ft 103 Vbe 8 V 2SD0662 2SD0662B 2SD662

    2SD0662

    Abstract: 2SD0662B 2SD662 2SD662B
    Text: Transistors 2SD0662, 2SD0662B 2SD662, 2SD662B Silicon NPN epitaxial planar type For high breakdown voltage general amplification Unit: mm 2.5±0.1 Parameter Symbol Rating Unit VCBO 250 V 2SD0662 2SD0662B (1.0) R 0.9 2.4±0.2 (0.85) 0.45±0.05 0.55±0.1 400


    Original
    PDF 2SD0662, 2SD0662B 2SD662, 2SD662B) 2SD0662 2SD0662 2SD0662B 2SD662 2SD662B

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original
    PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original
    PDF XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928