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    2SC603 Search Results

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    2SC603 Price and Stock

    Panasonic Electronic Components 2SC603600L

    TRANS NPN 12V 0.5A SSSMINI3
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    2SC603600L Digi-Reel 1
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    Panasonic Electronic Components 2SC6036G0L

    TRANS NPN 12V 0.5A SSSMINI3
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    DigiKey 2SC6036G0L Digi-Reel 1
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    Panasonic Electronic Components 2SC6037J0L

    TRANS NPN 12V 0.5A SSMINI3
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    2SC6037J0L Digi-Reel 1
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    Toshiba America Electronic Components 2SC6033(TE85L,F)

    Trans GP BJT NPN 50V 2.5A 1000mW 3-Pin TSM T/R
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    Verical 2SC6033(TE85L,F) 3,772 250
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    Chip1Stop 2SC6033(TE85L,F) Cut Tape 3,772
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    2SC603 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SC603 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC603 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC603 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC603 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC603 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC603 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC603 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC603 NEC Bipolar Dual Transistor / FET / Dual FETs Scan PDF
    2SC6033 Toshiba Silicon NPN transistor for high-speed switching, DC-DC converter and strobe flash applications Original PDF
    2SC6034 Toshiba Transistor Silicon NPN Triple Diffused Type Original PDF
    2SC6036 Panasonic Transistor for general amplification. Complementary to 2SA2162 Original PDF
    2SC603600L Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 12VCEO 500MA SSSMINI-3 Original PDF
    2SC6036G0L Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 12VCEO 500MA SSSMINI-3 Original PDF
    2SC6037J Panasonic Transistor for general amplification. Complementary to 2SA2161J Original PDF
    2SC6037J0L Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 12VCEO 500MA SSMINI-3 Original PDF

    2SC603 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA2161J

    Abstract: 2SC6037J
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6037J Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2161J 1.00±0.05 • Features Collector-base voltage (Emitter open) VCBO 15 V Collector-emitter voltage (Base open)


    Original     		PDF 2002/95/EC) 2SC6037J 2SA2161J 2SA2161J 2SC6037J

    2SA2162

    Abstract: 2SC6036 2SC603
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2162 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC6036 Unit: mm 0.33+0.05 −0.02 • Features 0.10+0.05 −0.02 (0.40) (0.40) 0.80±0.05 1.20±0.05


    Original     		PDF 2002/95/EC) 2SA2162 2SC6036 2SA2162 2SC6036 2SC603

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6036G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2162G • Package  Low collector-emitter saturation voltage VCE(sat)  SSS-Mini type package, allowing downsizing of the equipment and automatic


    Original     		PDF 2002/95/EC) 2SC6036G 2SA2162G

    Untitled

    Abstract: No abstract text available
    Text: 2SC6033 東芝トランジスタ シリコンNPNエピタキシャル形 2SC6033 ○ 高速スイッチング用 ○ DC−DC コンバータ用 ○ ストロボフラッシュ用 • 単位: mm : hFE = 250~400 IC = 0.3A 直流電流増幅率が高い。


    Original     		PDF 2SC6033

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6036 Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2162 Unit: mm 0.33+0.05 −0.02 • Features 0.10+0.05 −0.02 (0.40) (0.40) 0.80±0.05 1.20±0.05


    Original     		PDF 2002/95/EC) 2SC6036 2SA2162

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2162G Silicon PNP epitaxial planar type For general amplification Complementary to 2SC6036G • Features  Package  Low collector-emitter saturation voltage VCE(sat)  SSS-Mini type package, allowing downsizing of the equipment and automatic


    Original     		PDF 2002/95/EC) 2SA2162G 2SC6036G

    2SA2161J

    Abstract: 2SC6037J 2SA21
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6037J Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2161J 1.00±0.05 • Features Collector-base voltage (Emitter open) VCBO 15 V Collector-emitter voltage (Base open)


    Original     		PDF 2002/95/EC) 2SC6037J 2SA2161J 2SA2161J 2SC6037J 2SA21

    2-7D101A

    Abstract: 2SC6034 2sc603
    Text: 2SC6034 東芝トランジスタ シリコンNPN三重拡散形 2SC6034 ○ 高速高電圧スイッチング用 ○ スイッチングレギュレータ用 ○ 高速 DC-DC コンバータ用 • 単位: mm スイッチング時間が速い。 : tf = 0.24 s 最大 (IC = 0.3 A)


    Original     		PDF 2SC6034 2-7D101A 2-7D101A 2SC6034 2sc603

    Untitled

    Abstract: No abstract text available
    Text: 2SC6033 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6033 Unit : mm • Low collector-emitter saturation: VCE sat = 0.18 V (max) • High-speed switching: tf = 38 ns (typ.) Characteristics Collector-base voltage Storage temperature range VCBO 100 V 80


    Original     		PDF 2SC6033

    Untitled

    Abstract: No abstract text available
    Text: 2SC6033 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6033 Unit : mm • Low collector-emitter saturation: VCE sat = 0.18 V (max) • High-speed switching: tf = 38 ns (typ.) Characteristics Collector-base voltage Storage temperature range VCBO 100 V 80


    Original     		PDF 2SC6033

    2-7D101A

    Abstract: 2SC6034 2SC603
    Text: 2SC6034 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6034 High-Speed, High-Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications • Unit: mm High-speed switching: tf = 0.24 s max (IC = 0.3 A) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC6034 2-7D101A 2SC6034 2SC603

    2SC6033

    Abstract: No abstract text available
    Text: 2SC6033 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6033 Unit : mm Low collector-emitter saturation: VCE sat = 0.18 V (max) High-speed switching: tf = 38 ns (typ.) Characteristics Symbol Rating Unit VCBO 100 V VCEX 80 V VCEO 50 V VEBO 6 V DC IC 2.5


    Original     		PDF 2SC6033 2SC6033

    2SC6034

    Abstract: 2-7D101A C6034
    Text: 2SC6034 東芝トランジスタ シリコンNPN三重拡散形 2SC6034 ○ 高速高電圧スイッチング用 ○ スイッチングレギュレータ用 ○ 高速 DC-DC コンバータ用 • 単位: mm スイッチング時間が速い。 : tf = 0.24 s 最大 (IC = 0.3 A)


    Original     		PDF 2SC6034 2-7D101A 20070701-JA 2SC6034 2-7D101A C6034

    SC-89 JEDEC

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2161J Silicon PNP epitaxial planar type Unit: mm 0.80±0.05 For general amplification Complementary to 2SC6037J 1.60+0.05 –0.03 1.00±0.05 0.12+0.03 –0.01 0 to 0.02 (0.50)(0.50)


    Original     		PDF 2002/95/EC) 2SA2161J 2SC6037J SC-89 JEDEC

    2SA2162G

    Abstract: 2SC6036
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6036G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2162G • Package  Low collector-emitter saturation voltage VCE(sat)  SSS-Mini type package, allowing downsizing of the equipment and automatic


    Original     		PDF 2002/95/EC) 2SC6036G 2SA2162G 2SA2162G 2SC6036

    2SA21

    Abstract: marking 2u 2SA2162 2SC6036
    Text: Transistors 2SA2162 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC6036 Unit: mm 0.33+0.05 −0.02 • Features 0.10+0.05 −0.02 0.40 (0.40) 0.80±0.05 1.20±0.05  Absolute Maximum Ratings Ta = 25°C Unit Collector-base voltage (Emitter open)


    Original     		PDF 2SA2162 2SC6036 2SA21 marking 2u 2SA2162 2SC6036

    2SC6033

    Abstract: No abstract text available
    Text: 2SC6033 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6033 Unit : mm • Low collector-emitter saturation: VCE sat = 0.18 V (max) • High-speed switching: tf = 38 ns (typ.) Characteristics Collector-base voltage Storage temperature range VCBO 100 V 80


    Original     		PDF 2SC6033 2SC6033

    2SC6037J

    Abstract: 2SA2161G 2SC6037G 2SC603
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6037G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2161G • Package  Low collector-emitter saturation voltage VCE(sat)  SS-Mini type package, allowing downsizing of the equipment and automatic


    Original     		PDF 2002/95/EC) 2SC6037G 2SA2161G 2SC6037J 2SA2161G 2SC6037G 2SC603

    2SA2162G

    Abstract: 2SC6036 2SC6036G
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6036G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2162G • Package  Low collector-emitter saturation voltage VCE(sat)  SSS-Mini type package, allowing downsizing of the equipment and automatic


    Original     		PDF 2002/95/EC) 2SC6036G 2SA2162G 2SA2162G 2SC6036 2SC6036G

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2162 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC6036 Unit: mm 0.33+0.05 −0.02 • Features 0.10+0.05 −0.02 Unit Collector-base voltage (Emitter open)


    Original     		PDF 2002/95/EC) 2SA2162 2SC6036

    2-7D101A

    Abstract: 2SC6034 iB21
    Text: 2SC6034 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6034 High-Speed, High-Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • High-speed switching: tf = 0.24 µs max (IC = 0.3 A) Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC6034 2-7D101A 2SC6034 iB21

    Untitled

    Abstract: No abstract text available
    Text: 2SC6033 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6033 Unit : mm Low collector-emitter saturation: VCE sat = 0.18 V (max) High-speed switching: tf = 38 ns (typ.) Characteristics Symbol Rating Unit VCBO 100 V VCEX 80 V VCEO 50 V VEBO 6 V DC IC 2.5


    Original     		PDF 2SC6033 01gmitation,

    2SC603

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6037J Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2161J 1.00±0.05 • Features VCEO Emitter-base voltage (Collector open) VEBO Collector current


    Original     		PDF 2002/95/EC) 2SC6037J 2SA2161J 2SC603

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2162G Silicon PNP epitaxial planar type For general amplification Complementary to 2SC6036G • Package M Di ain sc te on na tin nc ue e/ d  Features  Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 2002/95/EC) 2SA2162G 2SC6036G