Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC5935 Silicon NPN triple diffusion planar type For power amplification For TV vertical deflection output Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Absolute Maximum Ratings TC = 25°C

2SC5935

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC5935 Silicon NPN triple diffusion planar type For power amplification For TV vertical deflection output Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 φ 3.2±0.1 Parameter Symbol

2SC5935

Contextual Info: Power Transistors 2SC5935 Silicon NPN triple diffusion planar type For power amplification For TV vertical deflection output Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC5935 Silicon NPN triple diffusion planar type For power amplification For TV vertical deflection output Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Absolute Maximum Ratings TC = 25°C

2SC5935

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC5935 Silicon NPN triple diffusion planar type For power amplification For TV vertical deflection output Unit: mm 4.6±0.2 2.9±0.2 3.0±0.5 M Di ain sc te on na tin nc ue e/

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

ma3df25

Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

C5935

Abstract: 2SA2140 2SC5993
Contextual Info: Product News Delivering high breakdown voltage plus high frequency characteristics. High-fT Transistors 2SA2140/2SC5993 „ Overview 2SA2140/2SC5993 high-fT transistors deliver a typical fT value of 100MHz or higher at VCEO of 180V while featuring high-speed switching and low-saturation voltage

mip411

Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the