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    2SC5935 Search Results

    2SC5935 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SC5935 Panasonic Silicon NPN triple diffusion planar type Original PDF
    2SC5935P Panasonic Silicon NPN triple diffusion planar type Original PDF
    2SC5935Q Panasonic Silicon NPN triple diffusion planar type Original PDF

    2SC5935 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC5935 Silicon NPN triple diffusion planar type For power amplification For TV vertical deflection output Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Absolute Maximum Ratings TC = 25°C


    Original
    PDF 2002/95/EC) 2SC5935

    2SC5935

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC5935 Silicon NPN triple diffusion planar type For power amplification For TV vertical deflection output Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 φ 3.2±0.1 Parameter Symbol


    Original
    PDF 2002/95/EC) 2SC5935 2SC5935

    2SC5935

    Abstract: No abstract text available
    Text: Power Transistors 2SC5935 Silicon NPN triple diffusion planar type For power amplification For TV vertical deflection output Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open


    Original
    PDF 2SC5935 2SC5935

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC5935 Silicon NPN triple diffusion planar type For power amplification For TV vertical deflection output Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Absolute Maximum Ratings TC = 25°C


    Original
    PDF 2002/95/EC) 2SC5935

    2SC5935

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC5935 Silicon NPN triple diffusion planar type For power amplification For TV vertical deflection output Unit: mm 4.6±0.2 2.9±0.2 3.0±0.5 M Di ain sc te on na tin nc ue e/


    Original
    PDF 2002/95/EC) 2SC5935 O-220D-A1 2SC5935

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original
    PDF PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent

    ma3df25

    Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
    Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original
    PDF respons39 O-220D-A1 MA26P02 MAZ3082J 2SC5779 MA26P07 MAZ3091 2SC5829 MA27E020G ma3df25 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original
    PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original
    PDF XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928

    C5935

    Abstract: 2SA2140 2SC5993
    Text: Product News Delivering high breakdown voltage plus high frequency characteristics. High-fT Transistors 2SA2140/2SC5993 „ Overview 2SA2140/2SC5993 high-fT transistors deliver a typical fT value of 100MHz or higher at VCEO of 180V while featuring high-speed switching and low-saturation voltage


    Original
    PDF 2SA2140/2SC5993 2SA2140/2SC5993 100MHz 2SA2118 2SC5993NEW 2SC5935 2SA2140NEW C5935 2SA2140 2SC5993

    mip411

    Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original
    PDF PAMP13-N1 mip411 MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291