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    2SC588 Search Results

    2SC588 Datasheets (32)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SC588 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC588 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC588 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC588 Unknown Shortform Transistor PDF Datasheet Scan PDF
    2SC588 Unknown Cross Reference Datasheet Scan PDF
    2SC588 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SC588 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC588 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC588 Unknown Shortform Transistor Datasheet Guide Scan PDF
    2SC588 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
    2SC588 Unknown Shortform Data and Cross References (Misc Datasheets) Scan PDF
    2SC5880 ROHM Power transistor (60V, 2A) Original PDF
    2SC5880TV2Q ROHM High speed switching Transistor; Package: ATV; Constitution materials list: Packing style: Ammo Box; Package quantity: 2500; Original PDF
    2SC5880TV2Q ROHM Power Transistor (60 V, 2 A) Original PDF
    2SC5880TV2R ROHM Power Transistor (60 V, 2 A) Original PDF
    2SC5880TV2R ROHM Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 60V 2A 3-PIN ATV Original PDF
    2SC5881 ROHM Power transistor (60V, 5A) Original PDF
    2SC5881TLQ ROHM Power Transistor (60 V, 5 A) Original PDF
    2SC5882 Isahaya Electronics SILICON NPN EPITAXIAL TRANSISTOR Original PDF
    2SC5884 Panasonic Silicon NPN triple diffusion mesa type Original PDF
    SF Impression Pixel

    2SC588 Price and Stock

    onsemi 2SC5888

    TRANS NPN 50V 10A TO220ML
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SC5888 Bag
    • 1 -
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    ROHM Semiconductor 2SC5880TV2R

    TRANS NPN 60V 2A ATV
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SC5880TV2R Reel 2,500
    • 1 -
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    • 10000 $0.13178
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    Avnet Americas 2SC5880TV2R Reel 2,500
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    ROHM Semiconductor 2SC5880TV2Q

    TRANS NPN 60V 2A ATV
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SC5880TV2Q Reel 2,500
    • 1 -
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    • 10000 $0.13178
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    Avnet Americas 2SC5880TV2Q Reel 2,500
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    Toshiba America Electronic Components 2SC5886A,L1XHQ(O

    TRANSISTOR NPN BIPO PWMOLD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SC5886A,L1XHQ(O Reel
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    Toshiba America Electronic Components 2SC5886A(T6L1,NQ)

    TRANS NPN 50V 5A PW-MOLD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SC5886A(T6L1,NQ) Digi-Reel 1
    • 1 $0.67
    • 10 $0.576
    • 100 $0.3991
    • 1000 $0.28381
    • 10000 $0.28381
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    Mouser Electronics 2SC5886A(T6L1,NQ)
    • 1 $0.68
    • 10 $0.602
    • 100 $0.411
    • 1000 $0.292
    • 10000 $0.237
    		Get Quote
    Find more 2SC588 price and stock on Findchips.com

    2SC588 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA2098

    Abstract: 2sc5887 IC 7495 datasheet TA-372 2SA2098-2SC5887 ic 7495 2SA20 7495 ic
    Text: Ordering number : ENN7495 2SA2098 / 2SC5887 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2098 / 2SC5887 High-Current Switching Applications Applications • Package Dimensions Relay drivers, lamp drivers, motor drivers. unit : mm 2041A Features • 3.2


    Original     		PDF ENN7495 2SA2098 2SC5887 2SC5887] 2SA2098 O-220ML 2sc5887 IC 7495 datasheet TA-372 2SA2098-2SC5887 ic 7495 2SA20 7495 ic

    2sa2099

    Abstract: 2SC5888 equivalent transistor 2sc5888 ENN7331 2SA20 D2502
    Text: Ordering number : ENN7331 2SA2099 / 2SC5888 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2099 / 2SC5888 High-Current Switching Applications Applications • Package Dimensions Relay drivers, lamp drivers, motor drivers. unit : mm 2041A Features • 3.2


    Original     		PDF ENN7331 2SA2099 2SC5888 2SC5888] 2SA2099 O-220ML 2SC5888 equivalent transistor 2sc5888 ENN7331 2SA20 D2502

    C5886

    Abstract: 2SC5886
    Text: 2SC5886 東芝トランジスタ シリコンNPNエピタキシャル形 2SC5886 ○ 高速スイッチング用 ○ DC-DC コンバータ用 単位: mm • 直流電流増幅率が高い。 • コレクタ･エミッタ間飽和電圧が低い。 : VCE sat = 0.22 V (最大)


    Original     		PDF 2SC5886 20070701-JA C5886 2SC5886

    c5886

    Abstract: transistor c5886 2SC5886
    Text: 2SC5886 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation: VCE (sat) = 0.22 V (max) •


    Original     		PDF 2SC5886 c5886 transistor c5886 2SC5886

    2SC5889

    Abstract: No abstract text available
    Text: UTC 2SC5889 NPN EPITAXIAL SILICON TRANSISTOR DC/DC CONVERTER APPLICATIONS FEATURES *Large current capacitance. *Low collector-emitter saturation voltage. *High-speed switching 1 *High allowable power dissipation. APPLICATIONS * relay drivers, lamp drivers, motor drivers, strobes.


    Original     		PDF 2SC5889 QW-R216-005

    74014

    Abstract: DATASHEET OF IC 7401 2SC5889 74013
    Text: Ordering number : ENN7401 2SC5889 NPN Epitaxial Planar Silicon Transistors 2SC5889 DC / DC Converter Applications Applications • Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit : mm 2033A Features • • 0.4 0.5 15.0 0.6 •


    Original     		PDF ENN7401 2SC5889 2SC5889] 74014 DATASHEET OF IC 7401 2SC5889 74013

    c5885

    Abstract: TO220H 2sc5885 2SC5885 equivalent c5885 transistor SJD00312AED 2sc5885 transistor TO-220H c5885 datasheet 2SC588
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC5885 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV, CRT monitor 3.0±0.2 Unit: mm 4.6±0.2 M Di ain sc te on na tin nc ue e/ d 9.9±0.3 • Features


    Original     		PDF 2002/95/EC) 2SC5885 c5885 TO220H 2sc5885 2SC5885 equivalent c5885 transistor SJD00312AED 2sc5885 transistor TO-220H c5885 datasheet 2SC588

    c5886

    Abstract: 2SC5886
    Text: 2SC5886 東芝トランジスタ シリコンNPNエピタキシャル形 2SC5886 ○ 高速スイッチング用 ○ DC-DC コンバータ用 単位: mm • 直流電流増幅率が高い。 • コレクタ･エミッタ間飽和電圧が低い。 : VCE sat = 0.22 V (最大)


    Original     		PDF 2SC5886 c5886 2SC5886

    C5886

    Abstract: transistor c5886 c5886 transistor
    Text: 2SC5886 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation: VCE (sat) = 0.22 V (max) •


    Original     		PDF 2SC5886 C5886 transistor c5886 c5886 transistor

    C5886A

    Abstract: No abstract text available
    Text: 2SC5886A TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886A High-Speed Switching Applications DC/DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation: VCE (sat) = 0.22 V (max)


    Original     		PDF 2SC5886A C5886A

    2SA2093

    Abstract: 2SC5880
    Text: 2SC5880 Transistors Power transistor 60V, 2A 2SC5880 zExternal dimensions (Unit : mm) ATV 2.5 1.0 0.65Max. 0.5 4.4 0.9 6.8 14.5 zFeatures 1) High speed switching. (Tf : Typ. : 35ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 100mA)


    Original     		PDF 2SC5880 65Max. 200mV 100mA) 2SA2093 C5880 2SA2093 2SC5880

    2SA2099

    Abstract: 2SC5888 equivalent transistor 2sc5888 D2502 TA-3711 2SC588
    Text: 2SA2099 / 2SC5888 Ordering number : EN7331A SANYO Semiconductors DATA SHEET 2SA2099 / 2SC5888 PNP / NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications Applications • Relay drivers, lamp drivers, motor drivers. Features • • •


    Original     		PDF 2SA2099 2SC5888 EN7331A 2SA2099 2SC5888 equivalent transistor 2sc5888 D2502 TA-3711 2SC588

    c5885

    Abstract: c5885 transistor 2SC5885 2SC5885 equivalent TO220H c5885 datasheet 2sc5885 transistor SJD00312AED c5885 data Diode 302
    Text: Power Transistors 2SC5885 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV, CRT monitor • Features Rating Unit Collector-base voltage Emitter open VCBO 1 500 V Collector-emitter voltage (E-B short) VCES 1 500 V Emitter-base voltage (Collector open)


    Original     		PDF 2SC5885 c5885 c5885 transistor 2SC5885 2SC5885 equivalent TO220H c5885 datasheet 2sc5885 transistor SJD00312AED c5885 data Diode 302

    c5886

    Abstract: 2SC5886
    Text: 2SC5886 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation: VCE (sat) = 0.22 V (max) •


    Original     		PDF 2SC5886 c5886 2SC5886

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SC5889 NPN EPITAXIAL SILICON TRANSISTOR DC/DC CONVERTER APPLICATIONS FEATURES *Large current capacitance. *Low collector-emitter saturation voltage. *High-speed switching 1 *High allowable power dissipation. APPLICATIONS * relay drivers, lamp drivers, motor drivers, strobes.


    Original     		PDF 2SC5889 QW-R216-005

    Untitled

    Abstract: No abstract text available
    Text: Reliability Tests Report Product Name: 2SC5886A Package Name: New PW-Mold 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Flow) Heat resistance (Iron) Temperature cycling Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s


    Original     		PDF 2SC5886A

    C5886A

    Abstract: 2SC5886A
    Text: 2SC5886A 東芝トランジスタ シリコンNPNエピタキシャル形 2SC5886A ○ 高速スイッチング用 ○ DC-DC コンバータ用 単位: mm • 直流電流増幅率が高い。 • コレクタ･エミッタ間飽和電圧が低い。 : VCE sat = 0.22 V (最大)


    Original     		PDF 2SC5886A C5886A 2SC5886A

    c5881

    Abstract: No abstract text available
    Text: 2SC5881 Transistors Power transistor 60V, 5A 2SC5881 !External dimensions (Unit : mm) 0.75 5.5 1.5 5.1 (2) (3) 0.9 0.5 0.8Min. 1.5 2.5 9.5 2.3 C0.5 0.65 2.3 (1) Base (2) Collector (3) Emitter 6.5 2.3 (1) (SC-63) <SOT-428> 0.9 CPT3 1.0 0.5 !Features 1) High speed switching.


    Original     		PDF 2SC5881 200mV 300mA) 2SA2096 SC-63) OT-428> C5881 c5881

    Untitled

    Abstract: No abstract text available
    Text: Power transistor 60V, 2A 2SC5880 Features 1) High speed switching. (tf : Typ. : 35ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 100mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2093


    Original     		PDF 2SC5880 200mV 100mA) 2SA2093 C5880 R1120A

    C5886

    Abstract: 2SC5886
    Text: 2SC5886 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A · Low collector-emitter saturation: VCE (sat) = 0.22 V (max) · High-speed switching: tf = 55 ns (typ.)


    Original     		PDF 2SC5886 C5886 2SC5886

    MAG 1832

    Abstract: 2SC5882 2SC5882NPN
    Text: 〈トランジスタ〉 2SC5882 開発中（暫定） 高周波増幅用 シリコンNPNエピタキシァル形 本品種は開発中につき後日変更する場合があります。 概 要 2SC5882は超小形外形樹脂封止形シリコンNPNエピタキ


    Original     		PDF 2SC5882 2SC5882NPN MAG 1832 2SC5882 2SC5882NPN

    transistor c5886

    Abstract: No abstract text available
    Text: 2SC5886 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation: VCE (sat) = 0.22 V (max) •


    Original     		PDF 2SC5886 transistor c5886

    6008E-12

    Abstract: 2SC5880
    Text: SPICE PARAMETER 2SC5880 by ROHM TR Div. * 2SC5880 NPN BJT model * Date: 2006/11/13 .MODEL 2SC5880 NPN + IS=270.00E-15 + BF=230.08 + VAF=100 + IKF=3.6536 + ISE=270.00E-15 + NE=1.4864 + BR=7.8806 + VAR=100 + IKR=.34994 + ISC=7.6008E-12 + NC=1.4061 + NK=.76747


    Original     		PDF 2SC5880 Q2SC5880 00E-15 6008E-12 000E-3 568E-3 43E-12 343E-12 6008E-12 2SC5880

    2SA2093

    Abstract: 2SC5880 c5880 60V transistor npn 2a switching applications
    Text: 2SC5880 Transistors Power transistor 60V, 2A 2SC5880 zDimensions (Unit : mm) zFeatures 1) High speed switching. (tf : Typ. : 35ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 100mA) 3) Strong discharge power for inductive load and


    Original     		PDF 2SC5880 200mV 100mA) 2SA2093 C5880 2SA2093 2SC5880 c5880 60V transistor npn 2a switching applications