2SC5765
Abstract: No abstract text available
Text: 2SC5765 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5765 Medium Power Amplifier Applications Strobo Flash Applications Low Saturation Voltage: Unit: mm VCE sat (1) = 0.27 V (max.) (IC = 3 A/IB = 60 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic
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2SC5765
2SC5765
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2sc5765
Abstract: No abstract text available
Text: UTC 2SC5765 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER AMPLIFIER STROBO FLASH DESCRIPTION * medium power amplifier applications * strobo flash applications 1 FEATURES TO-92SP *Low Saturation Voltage: VCE sat = 0.27 V (max.), (Ic = 3A / IB =60 mA) 1.EMITTER
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2SC5765
O-92SP
QW-R216-002
2sc5765
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Untitled
Abstract: No abstract text available
Text: 2SC5765 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5765 MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS • Unit: mm Low Saturation Voltage: VCE sat (1) = 0.27 V (max.) (IC = 3 A/IB = 60 mA) Absolute Maximum Ratings (Ta = 25°C)
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2SC5765
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2sC5765 transistor
Abstract: 2SC5765
Text: 2SC5765 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5765 MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS • Unit: mm Low Saturation Voltage: VCE sat (1) = 0.27 V (max.) (IC = 3 A/IB = 60 mA) Maximum Ratings (Ta = 25°C) Characteristic
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2SC5765
2sC5765 transistor
2SC5765
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SC5765 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER AMPLIFIER STROBO FLASH DESCRIPTION medium power amplifier applications strobo flash applications FEATURES * Low Saturation Voltage: VCE sat = 0.27 V (max.), (Ic = 3A / IB =60 mA)
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2SC5765
2SC5765L-T9S-K
2SC5765G-T9S-K
O-92SP
QW-R216-002
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2SC5765
Abstract: No abstract text available
Text: 2SC5765 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 2SC5765 ○ 中電力増幅用 ○ ストロボ用 • 単位: mm コレクタ飽和電圧が低い。 : VCE sat = 0.27 V (最大) (IC = 3 A/IB = 60 mA) 絶対最大定格 (Ta = 25°C)
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2SC5765
2SC5765
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Untitled
Abstract: No abstract text available
Text: 2SC5765 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5765 MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS • Low Saturation Voltage: VCE sat (1) = 0.27 V (Max.) (IC = 3 A/IB = 60 mA) Maximum Ratings (Ta = 25°C) Characteristic
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2SC5765
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Untitled
Abstract: No abstract text available
Text: UTC 2SC5765 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER AMPLIFIER STROBO FLASH DESCRIPTION * medium power amplifier applications * strobo flash applications 1 FEATURES TO-92SP *Low Saturation Voltage: VCE sat = 0.27 V (max.), (Ic = 3A / IB =60 mA) 1.EMITTER
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2SC5765
O-92SP
QW-R216-002
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2SC5765
Abstract: 2sC5765 transistor
Text: 2SC5765 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5765 MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS • Unit: mm Low Saturation Voltage: VCE sat (1) = 0.27 V (max.) (IC = 3 A/IB = 60 mA) Maximum Ratings (Ta = 25°C) Characteristic
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2SC5765
2SC5765
2sC5765 transistor
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD 2SC5765 NPN EPITAXIAL SILICON TRANSISTOR M EDI U M POWER AM PLI FI ER ST ROBO FLASH ̈ DESCRI PT I ON medium power amplifier applications strobo flash applications ̈ FEAT U RES * Low Saturation Voltage: VCE sat = 0.27 V (max.),
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2SC5765
2SC5765L-T9S-K
2SC5765G-T9S-K
O-92SP
QW-R216-002
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TC7SZ08FU
Abstract: lm2804 TC7S14F sot-24 led TC7SZ126FU TC7SZ125FU SOT-24 te85l F TC7W04F 2sc2240 equivalent
Text: General-Purpose Small-Signal Surface-Mount Devices PRODUCT GUIDE CONTENTS 1. Package Information 3 to 6 2. Small Signal Transistors and Diodes 2.1 New Products 2.2 Small-Signal Transistors 2.3 Bias Resistor Transistora BRTs 6.1 Single Output type 6.2 Dual Output type
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3407C-0209
TC7SZ08FU
lm2804
TC7S14F
sot-24 led
TC7SZ126FU
TC7SZ125FU
SOT-24
te85l F
TC7W04F
2sc2240 equivalent
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2SC5471
Abstract: 2SC5853 2sa1015 transistor 2sc1815 transistor 2SA970 transistor 2SC5854 transistor 2sc1815 2Sc5720 transistor 2SC5766 Low-Frequency Low-Noise PNP transistor
Text: Part Number Product Category Polarity Collector-Emitter Voltage V_CEO,max V 2SC1815 Transistor for Low-Frequency Small-Signal Amplification NPN 50.0 150.0 0.25 2SA1015 Transistor for Low-Frequency Small-Signal Amplification PNP -50.0 -150.0 -0.3 2SC2458 Transistor for Low-Frequency Small-Signal Amplification NPN
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2SC1815
2SA1015
2SC2458
2SA1048
2SC2240
2SA970
2SC2459
2SA1049
A1587
2SC4117
2SC5471
2SC5853
2sa1015 transistor
2sc1815 transistor
2SA970 transistor
2SC5854
transistor 2sc1815
2Sc5720 transistor
2SC5766
Low-Frequency Low-Noise PNP transistor
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2SJ74
Abstract: 2SC3136 2SK118 2SC1815 2SA1015 2SC1815 2sc2240 equivalent 2SA1349 2SA1015 2SK241 2SC2348
Text: 主要特性一覧表 [2] [ 2 ] 主要特性一覧表 TO-92 タイプ SC-43 1. TO-92 <トランジスタ> 形 名 NPN 2SC1815 PNP 2SA1015 O: 70~140 VCEO IC PC (V) (mA) (mW) 50 150 400 Y: 120~240 2SC732TM L L 2SC1815○ 2SA1015○ hFE 70~700/ 400 GR: 200~400
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SC-43)
2SC1815
2SA1015
2SC732TM
2SC1815
2SC2240
2SA970
2SC3381
2SA1349
2SJ74
2SC3136
2SK118
2SC1815 2SA1015
2sc2240 equivalent
2SA1349
2SA1015
2SK241
2SC2348
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