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    2SC571 Price and Stock

    Toshiba America Electronic Components 2SC5712(TE12L,F)

    TRANS NPN 50V 3A PW-MINI
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    DigiKey 2SC5712(TE12L,F) Digi-Reel 145 1
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    2SC5712(TE12L,F) Cut Tape 145 1
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    2SC5712(TE12L,F) Reel 1,000
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    Mouser Electronics 2SC5712(TE12L,F) 2,293
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    Quest Components 2SC5712(TE12L,F) 42,099
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    2SC5712(TE12L,F) 42,099
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    Chip1Stop 2SC5712(TE12L,F) Cut Tape 30
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    EBV Elektronik 2SC5712(TE12L,F) 17 Weeks 1,000
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    Toshiba America Electronic Components 2SC5714(TE12L,ZF)

    TRANS NPN 20V 4A PW-MINI
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    Toshiba America Electronic Components 2SC5712(TE12LF)

    Trans GP BJT NPN 80V 3A 3-Pin SC-62 Emboss T/R - Tape and Reel (Alt: 2SC5712(TE12L,F))
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    Avnet Americas 2SC5712(TE12LF) Reel 2,000 12 Weeks 1,000
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    Toshiba America Electronic Components 2SC5712(TE12L,ZF)

    2SC5712(TE12L,ZF)
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    Verical 2SC5712(TE12L,ZF) 6,400 334
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    Quest Components 2SC5712(TE12L,ZF) 5,120
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    Toshiba America Electronic Components 2SC5714(TE12L,F)

    Trans GP BJT NPN 20V 4A 1000mW 4-Pin(3+Tab) PW-Mini T/R
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    Verical 2SC5714(TE12L,F) 996 327
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    2SC5714(TE12L,F) 536 327
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    Quest Components 2SC5714(TE12L,F) 1,225
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    2SC571 Datasheets (24)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC571 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC571 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC571 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SC571 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC571 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC571 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC571 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC571 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC571 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SC571 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC571 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC571 Unknown Transistor Replacements Scan PDF
    2SC5710 Sanyo Semiconductor NPN Epitaxial Planar Silicon Transistors Original PDF
    2SC5712 Toshiba TOSHIBA Transistor Silicon NPN Epitaxial Type Original PDF
    2SC5712 Toshiba NPN Transistor Original PDF
    2SC5712(TE12L,F) Toshiba 2SC5712 - TRANSISTOR NPN 50V 3A SC-62 Original PDF
    2SC5713 Toshiba Transistor Original PDF
    2SC5713 Toshiba NPN Transistor Original PDF
    2SC5714 Toshiba Transistor Original PDF
    2SC5714 Toshiba NPN Transistor Original PDF

    2SC571 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC5713

    Abstract: No abstract text available
    Text: 2SC5713 東芝トランジスタ シリコンNPNエピタキシャル形 2SC5713 ○ 高速スイッチング用 ○ DC-DC コンバータ用 ○ ストロボフラッシュ用 • 単位: mm : hFE = 400~1000 IC = 0.5 A 直流電流増幅率が高い。


    Original
    PDF 2SC5713 SC-62 20070701-JA 2SC5713

    2SC5717

    Abstract: 2-16E3A
    Text: 2SC5717 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5717 Horizontal Deflection Output for Super High Resolution Display, Color TV, Digital TV. High Speed Switching Applications. • High voltage: VCBO = 1500 V • Low saturation voltage: VCE sat = 3 V (max)


    Original
    PDF 2SC5717 2SC5717 2-16E3A

    C5716

    Abstract: TOSHIBA Transistor c5716
    Text: 2SC5716 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5716 Horizontal Deflection Output for High Resolution Display, Color TV • High voltage: VCBO = 1700 V • High speed: tf 2 = 0.2 µs (typ.) • Collector metal (fin) is fully covered with mold resin.


    Original
    PDF 2SC5716 2-16E3A C5716 TOSHIBA Transistor c5716

    c5717

    Abstract: No abstract text available
    Text: 2SC5717 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5717 Horizontal Deflection Output for Super High Resolution Display, Color TV, Digital TV Unit: mm High Speed Switching Applications • High voltage: VCBO = 1500 V • Low saturation voltage: VCE sat = 3 V (max)


    Original
    PDF 2SC5717 2-16E3A c5717

    a 69154

    Abstract: 2SA20 2044B 2SA2044 2SC5710 ta324
    Text: Ordering number : ENN6915 2SA2044 / 2SC5710 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2044 / 2SC5710 DC / DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit : mm 2045B [2SA2044 / 2SC5710]


    Original
    PDF ENN6915 2SA2044 2SC5710 2045B 2SC5710] 2044B a 69154 2SA20 2044B 2SC5710 ta324

    Untitled

    Abstract: No abstract text available
    Text: 2SC5713 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5713 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation voltage: VCE (sat) = 0.15 V (max)


    Original
    PDF 2SC5713

    2SC5712

    Abstract: No abstract text available
    Text: 2SC5712 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5712 High-Speed Switching Applications DC-DC Converter Applications Unit: mm DC-AC Converter Applications • High DC current gain: hFE = 400 to 1000 IC = 0.3 A • Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max)


    Original
    PDF 2SC5712 2SC5712

    2SC571

    Abstract: 2SC5714
    Text: 2SC5714 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5714 Industrial Applications High-Speed Switching Applications DC-DC Converter Applications Unit: mm Strobe Applications • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation voltage: VCE (sat) = 0.15 V (max)


    Original
    PDF 2SC5714 2SC571 2SC5714

    Untitled

    Abstract: No abstract text available
    Text: 2SC5714 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5714 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • Unit: mm High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation voltage: VCE (sat) = 0.15 V (max)


    Original
    PDF 2SC5714 150mitation,

    2SC5713

    Abstract: No abstract text available
    Text: 2SC5713 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5713 Industrial Applications High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A · Low collector-emitter saturation voltage: VCE (sat) = 0.15 V (max)


    Original
    PDF 2SC5713 2SC5713

    a 69154

    Abstract: 69154 2044B 2SA2044 2SC5710 ENN6915
    Text: Ordering number : ENN6915 2SA2044 / 2SC5710 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2044 / 2SC5710 DC / DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit : mm 2045B [2SA2044 / 2SC5710]


    Original
    PDF ENN6915 2SA2044 2SC5710 2045B 2SC5710] 2044B a 69154 69154 2044B 2SC5710 ENN6915

    Untitled

    Abstract: No abstract text available
    Text: 2SC5714 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SC5714 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Industrial Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation voltage: VCE (sat) = 0.15 V (max)


    Original
    PDF 2SC5714

    Untitled

    Abstract: No abstract text available
    Text: 2SC5714 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5714 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • Unit: mm High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation voltage: VCE (sat) = 0.15 V (max)


    Original
    PDF 2SC5714 150led

    Untitled

    Abstract: No abstract text available
    Text: 2SC5713 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5713 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm • High DC current gain: h FE = 400 to 1000 I C = 0.5 A • Low collector-emitter saturation voltage: V CE (sat) = 0.15 V (max)


    Original
    PDF 2SC5713

    2SC5714

    Abstract: No abstract text available
    Text: 2SC5714 東芝トランジスタ シリコンNPNエピタキシャル形 2SC5714 ○ 高速スイッチング用 ○ DC-DC コンバータ用 ○ ストロボフラッシュ用 単位: mm • 直流電流増幅率が高い。 • コレクタ・エミッタ間飽和電圧が低い。 : VCE sat = 0.15 V (最大)


    Original
    PDF 2SC5714 SC-62 2SC5714

    2-16E3A

    Abstract: 2SC5716
    Text: 2SC5716 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5716 Horizontal Deflection Output for High Resolution Display, Color TV • High voltage: VCBO = 1700 V • High speed: tf 2 = 0.2 µs (typ.) • Collector metal (fin) is fully covered with mold resin.


    Original
    PDF 2SC5716 2-16E3A 2SC5716

    2SC5717

    Abstract: 2-16E3A
    Text: 2SC5717 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5717 Horizontal Deflection Output for Super High Resolution Display, Color TV, Digital TV. High Speed Switching Applications. • High voltage: VCBO = 1500 V · Low saturation voltage: VCE sat = 3 V (max)


    Original
    PDF 2SC5717 2SC5717 2-16E3A

    2SC5713

    Abstract: No abstract text available
    Text: 2SC5713 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5713 Industrial Applications High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • Unit: mm High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation voltage: VCE (sat) = 0.15 V (max)


    Original
    PDF 2SC5713 2SC5713

    Untitled

    Abstract: No abstract text available
    Text: Reliability Tests Report Product Name: 2SC5712 Package Name: PW-Mini 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Flow) Heat resistance (Iron) Temperature cycling Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s


    Original
    PDF 2SC5712

    Untitled

    Abstract: No abstract text available
    Text: 2SC5712 東芝トランジスタ シリコンNPNエピタキシャル形 2SC5712 ○ 高速スイッチング用 ○ DC-DC コンバータ用 ○ DC-AC コンバータ用 単位: mm • 直流電流増幅率が高い。 • コレクタ・エミッタ間飽和電圧が低い。 : VCE sat = 0.14 V (最大)


    Original
    PDF 2SC5712

    2SC5712

    Abstract: No abstract text available
    Text: 2SC5712 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5712 High-Speed Switching Applications DC-DC Converter Applications DC-AC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.3 A • Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max)


    Original
    PDF 2SC5712 2SC5712

    2SC5714

    Abstract: No abstract text available
    Text: 2SC5714 東芝トランジスタ シリコンNPNエピタキシャル形 2SC5714 ○ 高速スイッチング用 ○ DC-DC コンバータ用 ○ ストロボフラッシュ用 単位: mm • 直流電流増幅率が高い。 • コレクタ・エミッタ間飽和電圧が低い。 : VCE sat = 0.15 V (最大)


    Original
    PDF 2SC5714 SC-62 20070701-JA 2SC5714

    2SC5714

    Abstract: No abstract text available
    Text: 2SC5714 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5714 Industrial Applications High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation voltage: VCE (sat) = 0.15 V (max)


    Original
    PDF 2SC5714 2SC5714

    Untitled

    Abstract: No abstract text available
    Text: O rdering num ber : E N N 6 9 1 5 | PNP / NPN Epitaxial Planar Silicon Transistors 2SA2044 / 2SC5710 IS A /tY O l DC / DC Converter Applications Package Dimensions Applications • R e la y d r iv e r s , l a m p d r i v e r s , m o t o r d riv e rs , st r o b e s .


    OCR Scan
    PDF 2SA2044 2SC5710 2045B