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    2SC5322 Search Results

    2SC5322 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SC5322 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC5322 Unknown NPN Transistor Scan PDF
    2SC5322 Toshiba Transistor Silicon NPN Epitaxial Planar Type Scan PDF
    2SC5322 Toshiba NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) Scan PDF
    2SC5322FT Unknown NPN Transistor Scan PDF
    2SC5322FT Toshiba NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) Scan PDF
    2SC5322FT Toshiba TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Scan PDF

    2SC5322 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC5322

    Abstract: No abstract text available
    Text: 2SC5322 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 2SC5322 ○ VHF~UHF 低雑音増幅用 単位: mm • 雑音特性が優れています。 : NF = 1.4dB f = 2 GHz • 高利得です。 : |S21e|2 = 10dB (f = 2 GHz) 絶対最大定格 (Ta = 25°C)


    Original     		PDF 2SC5322 2SC5322

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    RFM70U12D

    Abstract: 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919
    Text: 東芝半導体製品総覧表 2009 年 7 月版 高周波デバイス 高周波バイポーラ小信号トランジスタ 高周波小信号 FET 高周波パワーMOSFET 高周波バイポーラパワートランジスタ 高周波ダイオード 小信号 MMIC 高周波セルパック


    Original     		PDF SCJ0004N 2SC2714 2SC2715 2SC2716 2SC3123 2SC5064 2SC5084 2SC5089 2SC5094 2SC5106 RFM70U12D 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919

    MT4S300T

    Abstract: TGI0910-50 MT3S111P 2SC3136 S8850AF TA4032FT MT4S300U VHF-UHF Band oscillator 2sc5108 MT4S301T
    Text: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Diodes Small-Signal MMICs Radio-Frequency Cell Packs Microwave Semiconductors


    Original     		PDF 2010/9SCE0004K 2SC1923 MT4S300T TGI0910-50 MT3S111P 2SC3136 S8850AF TA4032FT MT4S300U VHF-UHF Band oscillator 2sc5108 MT4S301T

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA 2SC5322FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5322FT Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure : NF = 1.4 dB f = 2 GHz High Gain : |S2i e|2 = 10 dB (f = 2 GHz) 1.2 ±0 .0 5 0.8 ± 0.05


    OCR Scan     		PDF 2SC5322FT

    VHF-UHF Band Low Noise Amplifier

    Abstract: 2SC5322
    Text: TOSHIBA 2SC5322 TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE 2SC5322 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series 1.6 ± 0.2 • • r0.8 ±, 0 .1i, Low Noise Figure : NF = 1.4dB (f=2GHz) High Gain : Ga = 10dB (f=2GHz)


    OCR Scan     		PDF 2SC5322 16GHz VHF-UHF Band Low Noise Amplifier 2SC5322

    2SC5322

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5322 TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE 2SC5322 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series 1.6 ± 0.2 • • r , i 0.8 ± 0 . 1, Low Noise Figure : NF = 1.4dB (f=2GHz) High Gain


    OCR Scan     		PDF 2SC5322 16GHz 2SC5322

    2SC5322

    Abstract: No abstract text available
    Text: TO SH IBA 2SC5322 TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE 2SC5322 Unit in mm VH F-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • 1.6 ± 0.2 Low Noise Figure : NF = 1.4 dB f = 2 GHz High Gain : Ga = 10 dB (f = 2 GHz) ,0.8 ± 0.1,


    OCR Scan     		PDF 2SC5322 2SC5322

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5322 TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE 2SC5322 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series 1.6 ± 0.2 • • ,0.8 ± 0 . 1, r— r - i Low Noise Figure : NF = 1.4dB (f=2GHz) High Gain


    OCR Scan     		PDF 2SC5322 16GHz

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE 2SC5322 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm V H F -U H F B AN D LO W NOISE AMPLIFIER APPLICATIONS CHIP : f T = 16GHz series 1.6 ± 0.2 0.8 ± 0.1 • Low Noise Figure : NF = 1.4dB (f=2GHz) • High Gain l*- ^


    OCR Scan     		PDF 2SC5322 16GHz

    2SC5322F

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5322F TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE 2SC5322F Unit in mm VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.4dB f=2GHz : |S2i e|2= lOdB (f=2GHz) 1.6 ± 0.1 0.85 ±0.1 MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC5322F 2SC5322F

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SC5322FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 7 <; f 5 3 ? ? FT O V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure : NF = 1.4dB f=2GHz High Gain : |S2l e|2 = 10dB (f=2GHz) Unit in mm 1.2 ± 0.05 0.8 ± 0.05


    OCR Scan     		PDF 2SC5322FT

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE 2SC5322F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE mm v w f VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.4dB f=2GHz : jS2i ep= lOdB (f=2GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		PDF 2SC5322F

    2SC5322FT

    Abstract: No abstract text available
    Text: TO SH IBA 2SC5322FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5322FT V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure : NF = 1.4 dB f = 2 GHz High Gain : |S2l e|2 = 10 dB (f = 2 GHz) MAXIMUM RATINGS ÍTa = 25°CÌ


    OCR Scan     		PDF 2SC5322FT 0022g 2SC5322FT

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE 2SC5322 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5322 Unit in mm V H F -U H F B AN D LO W NOISE AM PLIFIER APPLICATIONS CHIP : f T = 16GHz series 1.6 ± 0.2 0.8 ± 0 . 1, • • Low Noise Figure : NF = 1.4dB (f=2GHz) High Gain


    OCR Scan     		PDF 2SC5322 16GHz

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE 2SC5322F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5322F Unit in mm VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.4dB f=2GHz : |S2i e|2= 10dB (f=2GHz) 1.6 ± 0.1 0.85 ±0.1 MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC5322F

    2SC5322FT

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5322FT TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5322FT O V H F -U H F B AN D LO W NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure : NF = 1.4dB f=2GHz High Gain : |S2i e|2= 10dB (f=2GHz) Unit in mm 1.2 ± 0.05 0.8 ± 0.05


    OCR Scan     		PDF 2SC5322FT 2SC5322FT

    2SC5322

    Abstract: HN3C18FT
    Text: T O S H IB A HN3C18FT TENTATIVE T O SH IBA TRANSISTO R SILICON NPN EPITAXIAL PLAN AR TYPE HN3C18FT Unit in mm V H F -U H F B A N D LO W NOISE AM PLIFIER APPLICATIO NS • TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6


    OCR Scan     		PDF HN3C18FT 2SC5322 2000MHz 2SC5322 HN3C18FT

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA HN2C13FT TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 7 f 1 3 FT • ■ ■ m 'm mtr m m Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS 2.1 ± 0 .1 • TWO devices are built in to the super-thin and ultra super


    OCR Scan     		PDF HN2C13FT 2SC5322 1000MHz 2000MHz

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA HN3C18FT TENTATIVE TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C18FT Unit in mm V H F -U H F B A N D LO W NOISE AMPLIFIER APPLICATIONS 2.1 ± 0.1 • TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6


    OCR Scan     		PDF HN3C18FT 2SC5322 2000MHz 2000MHz

    N2C13

    Abstract: 2SC5322 HN2C13FT
    Text: TO SH IBA TENTATIVE HN2C13FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 2 C 1 3 FT Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • 2.1 ± 0.1 TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6


    OCR Scan     		PDF HN2C13FT N2C13 2SC5322 2SC5322 HN2C13FT

    2SC5322

    Abstract: HN2C13FT
    Text: T O S H IB A TENTATIVE HN2C13FT T O SH IBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 2 C 1 3 FT Unit in mm V H F -U H F B A N D LOW NOISE AM PLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6


    OCR Scan     		PDF HN2C13FT HN2C13 2SC5322 1000MHz 2000MHz 2000MHz 2SC5322 HN2C13FT