2SC5091FT Search Results

2SC5091FT Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
2SC5091FT		Unknown	NPN Transistor		Scan	PDF
2SC5091FT		Toshiba	NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)		Scan	PDF
2SC5091FT		Toshiba	TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE		Scan	PDF

2SC5091FT Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2SC5091FT Abstract: TOSHIBA Semiconductor Reliability Handbook derating concept and method Text: 2SC5091FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5091FT VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, \|S21e\|2 = 13dB f = 1 GHz Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics	Original	2SC5091FT 2SC5091FT TOSHIBA Semiconductor Reliability Handbook derating concept and method	PDF
mje 317 equivalent Abstract: 2SC5091FT Text: 2SC5091FT SPICE2G6 model parameters 20010110 NET LIST .SUBCKT 2SC5091FT CB 2 LWB 2 LWE 4 Cpe 4 Cpb 5 LC 6 CC 1 CBC 1 Q1 6 5 4 + AREA= 1 .MODEL NPN + IS + BF + NF + VAF + IKF + ISE + NE + BR + NR + VAR + IKR + ISC + NC + RB + IRB + RBM + RE + RC + XTB + EG	Original	2SC5091FT 2SC5091FT mje 317 equivalent	PDF
2SC5091FT Abstract: No abstract text available Text: 2SC5091FT 東芝トランジスタシリコンNPNエピタキシャルプレーナ形 2SC5091FT ○ VHF~UHF 低雑音増幅用 • 単位: mm 雑音特性が優れています。 : NF = 1.1dB, \|S21e\|2 = 13dB f = 1 GHz 絶対最大定格 (Ta = 25°C) 項	Original	2SC5091FT 2SC5091FT	PDF
2SC5091FT Abstract: No abstract text available Text: 2SC5091FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5091FT VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, \|S21e\|2 = 13dB f = 1 GHz Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol	Original	2SC5091FT 2SC5091FT	PDF
2SC5091FT Abstract: No abstract text available Text: 2SC5091FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5091FT VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, \|S21e\|2 = 13dB f = 1 GHz Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics	Original	2SC5091FT 2SC5091FT	PDF
TA4029CTC Abstract: TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X Text: 製品カタログ 2011-1 東芝半導体製品カタログ高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 アプリケーション別推奨製品 .3~8	Original	BCJ0003G BCJ0003F TA4029CTC TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X	PDF
sec 2sc5088 Abstract: samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS Text: 2007-9 PRODUCT GUIDE Radio-Frequency Semiconductors Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors, diodes and	Original	BCE0003D S-167 BCE0003E sec 2sc5088 samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS	PDF
MT4S300T Abstract: TA4032FT MT3S111TU JAPANESE 2SC TRANSISTOR 2010 MT4S301T TA4029CTC TB7602CTC MT3S111P JAPANESE TRANSISTOR 2SC 2010 2sk3476 Text: 2011-1 PRODUCT GUIDE Radio-Frequency Semiconductors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Recommended Products by Application . 3 to 8 1.1 Cell Phones 1.2 TV Tuners 1.3 FRS/GMRS 1.4 Cordless Phones	Original	BCE0003F MT4S300T TA4032FT MT3S111TU JAPANESE 2SC TRANSISTOR 2010 MT4S301T TA4029CTC TB7602CTC MT3S111P JAPANESE TRANSISTOR 2SC 2010 2sk3476	PDF
TOSHIBA RF Power Module S-AV24 Abstract: diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192 Text: 高周波用半導体デバイスダイオード編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動したり故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製	Original	050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 TOSHIBA RF Power Module S-AV24 diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192	PDF
3SK73 Abstract: S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112 Text: 高周波用半導体デバイスパワーデバイス編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動したり故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製	Original	050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 3SK73 S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112	PDF
BB 505 Varicap Diode Abstract: s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114 Text: Radio-Frequency Semiconductors Diodes Semiconductor Company The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent	Original	3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 S-AV26H BB 505 Varicap Diode s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114	PDF
FET K161 Abstract: S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR Text: Radio-Frequency Semiconductors Transistors, FETs, Cell Packs Semiconductor Company The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or	Original	3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 S-AV26H FET K161 S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR	PDF
FET K161 Abstract: Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923 Text: 高周波用半導体デバイストランジスタ・FET・セルパック編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動したり故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製	Original	050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 FET K161 Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923	PDF
2sc5088 horizontal transistors Abstract: S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509 Text: High-Frequency Semiconductors Power Devices Semiconductor Company The information contained herein is subject to change without notice. 021023_D The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or	Original	3SK114 3SK126 S1255 2SC2644 2-AV24 3SK115 3SK291 S1256 2-AV26H 2sc5088 horizontal transistors S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509	PDF

2SK3075 equivalent Abstract: 10 ghz transistor 2SK3078 MT3S04T 2SC5066 MT6P03AE MT6P06E 3SK320 24lu1 transistor 2SC5066 Text: High-Frequency Devices for Mobile Communications PRODUCT GUIDE 800 MHz Band Analog and Digital Cellular High-Frequency Block Diagram Ant. RF Amp Mixer RX IF detection Prescaler VCO 1 900 MHz Buff Amp Buff Amp OSC (1) Tuning DUP Prescaler Buff Amp VCO (2) 100 MHz	Original	2SC5065 2SC5085 2SC5090 2SC5095 MT3S06U MT3S07U 2SC5066 2SC5086 2SC5091 2SC5096 2SK3075 equivalent 10 ghz transistor 2SK3078 MT3S04T 2SC5066 MT6P03AE MT6P06E 3SK320 24lu1 transistor 2SC5066	PDF
Untitled Abstract: No abstract text available Text: TO SHIBA 2SC5091FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE ?<;r i n Q i F T Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • • Low Noise Figure, High Gain. NF = l.ld B , \|S 2 ie l 2 = 7dB f=lG H z 1.2 ±0.05 M A X IM U M RATINGS (Ta = 25°C)	OCR Scan	2SC5091FT	PDF
2SC5091FT Abstract: toshiba M7 Text: 2SC5091FT TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5091FT Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure, High Gain. N F=l.ldB, \|S2iel2= 7dB f=lGHz 1.2 ± 0 .0 5 0.8 ± 0.05 M A X IM U M RATINGS (Ta = 25°C)	OCR Scan	2SC5091FT 0022g 2SC5091FT toshiba M7	PDF
2SC5091FT Abstract: toshiba M7 Text: 2SC5091FT TOSHIBA TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5091FT Unit in mm V H F -U H F B A N D LO W NOISE AM PLIFIER APPLICATIONS • • Low Noise Figure, High Gain. N F =l.ldB , \|S2lel2= 7dB f=lGHz 1.2 ± 0.05 0.8 ± 0.05 M A X IM U M RATINGS (Ta = 25°C)	OCR Scan	2SC5091FT 2SC5091FT toshiba M7	PDF