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    2SC506 Search Results

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    2SC506 Price and Stock

    Toshiba America Electronic Components 2SC5065-Y(TE85L,F)

    RF TRANS NPN 12V 7GHZ USM
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    DigiKey 2SC5065-Y(TE85L,F) Digi-Reel 438 1
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    2SC5065-Y(TE85L,F) Cut Tape 438 1
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    2SC5065-Y(TE85L,F) Reel 3,000
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    ROHM Semiconductor 2SC5060TV2M

    TRANS NPN DARL 90V 1A ATV
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    DigiKey 2SC5060TV2M Reel 2,500
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    Quest Components 2SC5060TV2M 1,387
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    Rochester Electronics LLC 2SC5069-TD-E

    SMALL SIGNAL BIPOLAR TRANSTR NPN
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    DigiKey 2SC5069-TD-E Bulk 1,567
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    Toshiba America Electronic Components 2SC5066-O,LF

    RF TRANS NPN 12V 7GHZ SSM
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    Toshiba America Electronic Components 2SC5065-O(TE85L,F)

    RF TRANS NPN 12V 7GHZ USM
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    Mouser Electronics 2SC5065-O(TE85L,F) 1,445
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    2SC506 Datasheets (132)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC506 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC506 Micro Electronics Semiconductor Device Data Book Scan PDF
    2SC506 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC506 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC506 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC506 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC506 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC506 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC506 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SC506 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC506 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC506 Unknown Cross Reference Datasheet Scan PDF
    2SC506 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC506 Toshiba Japanese Transistor Data Book Scan PDF
    2SC5060 ROHM Power transistor (90±10V, 3A) Original PDF
    2SC5060 ROHM Low Frequency Transistor (60V, 3A) Original PDF
    2SC5060 Various Russian Datasheets Transistor Original PDF
    2SC5060 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC5060 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC5060 ROHM ATR / ATV Transistors Scan PDF
    ...

    2SC506 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SC5065

    Abstract: 150-1 MARKING toshiba 133
    Text: 2SC5065 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5065 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. · NF = 1.1dB, |S21e|2 = 12dB f = 1 GHz Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating


    Original
    2SC5065 2SC5065 150-1 MARKING toshiba 133 PDF

    2SC5063

    Abstract: No abstract text available
    Text: Power Transistors 2SC5063 Silicon NPN triple diffusion planar type 1.5±0.1 10.0±0.3 2.0 0.8±0.1 2.54±0.3 5.08±0.5 1 1:Base 2:Collector 3:Emitter N Type Package 3 500 V VCES 500 V VCEO 400 V Emitter to base voltage VEBO 7 V Peak collector current ICP 3


    Original
    2SC5063 2SC5063 PDF

    2SC5066FT

    Abstract: MA80240
    Text: 2SC5066FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5066FT VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 12dB f = 1 GHz Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics


    Original
    2SC5066FT 2SC5066FT MA80240 PDF

    2SC5060

    Abstract: 2SC5060 equivalent ic 9010
    Text: 2SC5060 Transistors Power transistor 90±10V, 3A 2SC5060 !External dimensions (Units : mm) 2.5 1.0 0.65Max. 0.5 4.4 0.9 6.8 14.5 !Features 1) Built-in zener diode between collector and base. 2) Zener diode has low voltage dispersion. 3) Strong protection against reverse power surges due to “L”


    Original
    2SC5060 65Max. 500mA/1mA 30MHz 2SC5060 2SC5060 equivalent ic 9010 PDF

    A1712

    Abstract: No abstract text available
    Text: 2SC5064 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5064 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 12dB f = 1 GHz Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol


    Original
    2SC5064 A1712 PDF

    Untitled

    Abstract: No abstract text available
    Text: Reliability Tests Report Product Name: 2SC5066 Package Name: SSM 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Iron) Temperature cycling - Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s Preheat : 180 to 190 deg.C , 60 to 120 s


    Original
    2SC5066 PDF

    2SC5063

    Abstract: No abstract text available
    Text: Power Transistors 2SC5063 Silicon NPN triple diffusion planar type 1.5±0.1 10.0±0.3 2.0 0.8±0.1 2.54±0.3 5.08±0.5 1 1:Base 2:Collector 3:Emitter N Type Package 3 500 V VCES 500 V VCEO 400 V Emitter to base voltage VEBO 7 V Peak collector current ICP 3


    Original
    2SC5063 2SC5063 PDF

    2SC5063

    Abstract: No abstract text available
    Text: Power Transistors 2SC5063 Silicon NPN triple diffusion planar type 3.4±0.3 8.5±0.2 For high breakdown voltage high-speed switching 6.0±0.5 1.0±0.1 2.0 0.8±0.1 2.54±0.3 5.08±0.5 V 500 V 400 V 7 V VCEO Emitter to base voltage VEBO Peak collector current


    Original
    2SC5063 2SC5063 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC5066 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5066 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 12dB f = 1 GHz Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol


    Original
    2SC5066 PDF

    2SC5064

    Abstract: No abstract text available
    Text: 2SC5064 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5064 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 12dB f = 1 GHz Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol


    Original
    2SC5064 2SC5064 PDF

    2SC5064

    Abstract: 2801 j25 ic1030
    Text: 2SC5064 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 2SC5064 ○ VHF~UHF 低雑音増幅用 • 単位: mm 雑音特性が優れています。 : NF = 1.1dB, |S21e|2 = 12dB f = 1 GHz 絶対最大定格 (Ta = 25°C) 項 目


    Original
    2SC5064 SC-59 -j150 -j100 -j250 2SC5064 2801 j25 ic1030 PDF

    2SC5066

    Abstract: 2801 j25 30J250
    Text: 2SC5066 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 2SC5066 ○ VHF~UHF 低雑音増幅用 • 単位: mm 雑音特性が優れています。 : NF = 1.1dB, |S21e|2 = 12dB f = 1 GHz 絶対最大定格 (Ta = 25°C) 項 目


    Original
    2SC5066 -j150 -j100 -j250 2SC5066 2801 j25 30J250 PDF

    2801 j25

    Abstract: 2SC5065
    Text: 2SC5065 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 2SC5065 ○ VHF~UHF 低雑音増幅用 • 単位: mm 雑音特性が優れています。 : NF = 1.1dB, |S21e|2 = 12dB f = 1 GHz 絶対最大定格 (Ta = 25°C) 項 目


    Original
    2SC5065 SC-70 -j150 -j100 -j250 2801 j25 2SC5065 PDF

    ET 2314

    Abstract: No abstract text available
    Text: 2SC5065 SILICQN NPN EPITAXIAL PLANAR TYPE TRANSISTOR Unit in mm V H F - U H F B A N D L O W NO ISE A M P L IF IE R A PPLIC A TIO N S. • • Low Noise Figure, High Gain. NF = l.ld B , | S 2 l e l 2 = 12dB f=lG H z ÖO + COI Ö M A X IM U M R A T IN G S (Ta = 25°C)


    OCR Scan
    2SC5065 SC-70 13ASU IC314 ET 2314 PDF

    2SC5066

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5066 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5066 VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = l.ld B , |S2lel2= 12dB f=lG H z Unit in mm 1.6 ± 0.2 ,0.8 ±0.1, r— :— 1 MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan
    2SC5066 2SC5066 PDF

    2038A

    Abstract: BX-0115
    Text: O rdering n u m b e -: EN 4 5 0 9 i 2SC5069 No.4509 SA\YO N PN E p itax ial P lan a r Silicon T ran sisto r Low-Frequency General-Purpose Amp, Driver Applications I F e a tu re s •H igh C u rre n t C apacity. • Adoption of MBIT process. ■H igh DC c u rre n t gain.


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    2SC5069 250mm2X 42894MT BX-0115 2038A PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SC5066FT TOSHIBA TRANSISTOR K f SILICON NPN EPITAXIAL PLANAR TYPE RilfifiFT V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • NF = l.ld B , |S2 ie l2 = 12dB U n it in mm 1.2 ± 0 .0 5 f= lG H z 0.8 ± 0.05


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    2SC5066FT PDF

    sc 2314

    Abstract: 2SC5064
    Text: TO SH IBA 2SC5064 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5064 VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm + 0.5 2 .5 - 0 .3 • Low Noise Figure, High Gain. • N F = l.ld B , |S2lel2= 12dB f=lG H z + 0.25 k 1-5 - ° - 15 >i


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    2SC5064 sc 2314 2SC5064 PDF

    2SC5066

    Abstract: 2SC5066FT
    Text: TO SH IBA 2SC5066FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5066FT VH F-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = l.ld B , |S 2 i e l 2 = 12dB f=lG H z MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


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    2SC5066FT 0022g 2SC5066 2SC5066FT PDF

    2SC5066

    Abstract: transistor 2SC5066
    Text: TOSHIBA 2SC5066 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5066 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = l.ld B , |S2le |2= 12dB f=lG H z Unit in mm 0.8 ± 0.1 r MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


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    2SC5066 2SC5066 transistor 2SC5066 PDF

    2SC5068

    Abstract: No abstract text available
    Text: HITACHI 2SC5068A-Silicon NPN Triple Diffused Planar Application TO-3PFM N Character display horizontal deflection output Features • High breakdown voltage V CBo = 1 5 0 0 v >Ic = 12 A • High speed switching tf = 0.2 psec(typ) 1. Base 2. Collector


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    2SC5068A------Silicon 2SC5068 PDF

    2SC5060

    Abstract: No abstract text available
    Text: 2SC5060 /Transistors 2SC50601 7Jl'7‘L/ ~ f^N P N n'syztw-'J> ^ > # # Epitaxial Planar NPN Silicon Transistor Darlington) J i)j£ li:ftiti,l1!ffl/L o w Freq. Power Amp. • • 1) v f iiE l/D im e n s io n s (U n it : m m ) 90±10V » 7 K £ f*3SE„


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    2SC5060 2SC50601 2SC5060 PDF

    2SC5069

    Abstract: VEBO-15V 2038a
    Text: Ordering n u m b e r:E N 4 5 0 9 No.4509 _ 2SC5069 NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amp, Driver Applications I F e a tu re s •High C urrent Capacity. • Adoption of MBIT process. • High DC current gain.


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    EN4509 2SC5069 250mm2 2SC5069 VEBO-15V 2038a PDF

    toshiba 1107

    Abstract: 2SC5065
    Text: TO SH IBA 2SC5065 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5065 Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure, High Gain. N F = l.ld B , |S2lel2= 12dB f=lGHz 2.1 ¿ 0.1 1.25Ì0.1 ^ -4 in 1 o in VO 2 o


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    2SC5065 SC-70 toshiba 1107 2SC5065 PDF