2SC458A
Abstract: 2sc458c 2SC458
Text: HITACHI 2SC458 k SILICON NPN EPITAXIAL MEDIUM S P E E D SWITCHING 1. Kmiiicr 2. Colteaor 3. Base (Dimensions in mm (JE D E C TO-92) I A B S O L U T E M AXIMUM R A T IN G S 0 ^ 2 5 * 0 lie in Symbol MAXIM UM C O L L E C T O R D ISSIPA T IO N CURVE 2SC45B(k )
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2SC458Ck:
2SC458Â
2SC458A
2sc458c
2SC458
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LOPA
Abstract: 2SC2462
Text: HITACHI 2SC2462 — SILICON NPN EPITAXIAL LOW FREQUENCY AMPLIFIER Oi-Ì iE ' i— I ?!Í; ' ¡ Im« - á r<v| I i -7 Î iQ 5ï J.C>3S. [ — i* - 1. Entier 2. Bn<e Ï - ï Collector Ù im iftiiw is in inni \0_ D C l (MPAK ) I ASSOLUTE MAXIMUM RATINGS (Ta=25cQ
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2SC2462
2SC2462
2SC45B
LOPA
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2SC3413
Abstract: No abstract text available
Text: HITACHI 2SC3413 s il i c o n n p n e p i t a x ia l LOW FREQ UEN CY LOW NOISE AMPLIFIER HF AM PLIFIER „ÖJlC.l I. Erajjiif Colic*.lot 3 But K nK M U iti » r r n H>*| (SPA K) MAXIMUM COLLECTOR DISSIPATION CURVE I ABSO LU TE MAXIMUM RATINGS (Ta=2S°C)
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2SC3413
2SC34I3
2SC34I
2SC45d
2SC3413
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2SC4566
Abstract: video output transistor TO126ML c4370 2SC4370 sanyo transistor tt series 2sc3950 TS3767 2SC3790 2SA1751
Text: JYO SEMICONDUCTOR CORP 3EE 1> • DDOTaOS T ■ New'displays' and I J i require wider hand specifications. _ . . Industry top-level high-qiiality devices.; . . \ . : ;■ w. v. a ^ s i s i o F B E T / L S B T process’ h ig h -M h s ta n d .voltage transistors for wide band video output
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8SC4563;
8SC44U.
2SC4566
video output transistor
TO126ML
c4370
2SC4370
sanyo transistor tt series
2sc3950
TS3767
2SC3790
2SA1751
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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2SB415
Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
Text: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~
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4000HÂ
2SB415
2SB 710
2sc1061
2sd524
2sb504
HD68P01
2sb507
2sa762
2sc827
2SC1362
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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