Contextual Info: Ordering number:ENN3102 NPN Triple Diffused Planar Silicon Transistor 2SC4451 1500V/15mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions • High breakdown voltage. · Small Cob. · Wide ASO. · High reliability Adoption of HVP process .

2SC4451

Abstract: ITR06967 ITR06968 ITR06969 ITR06970 ITR06971
Contextual Info: Ordering number:ENN3102 NPN Triple Diffused Planar Silicon Transistor 2SC4451 1500V/15mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions • High breakdown voltage. · Small Cob. · Wide ASO. · High reliability Adoption of HVP process .

2SC4451

Abstract: EN3102
Contextual Info: Ordering number:EN3102 NPN Triple Diffused Planar Silicon Transistor 2SC4451 1500V/15mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions • High breakdown voltage. · Small Cob. · Wide ASO. · High reliability Adoption of HVP process .

Contextual Info: Ordering num ber: EN3102 2SC4451 NPN Triple Diffused Planar Silicon Transistor 1500V/15mA High-Voltage Amp, High-Voltage Switching Applications Features • High breakdown voltage • Small Cob - Wide ASO • High reliability Adoption of II VP process Absolute Maximum Ratings at Ta = 25°C

2SC3953

Abstract: TRANSISTOR T0220 2SC3597
Contextual Info: Horizontal deflection output composite transistor Absolute maximum ratings _ . I Package . Application T IT Vcbo Vcbo nn (V) HPA72R* T03PBL °"!fk (wilh high-speed damper diode) HPA100R T03PBL “ H PA.M T03PBL * “ “ “ Ä T Vceo Vceo lc >c Electrical characteristics (T, = 25 deg. C)

IC CD 3102

Abstract: 2SC4451 cd 3102
Contextual Info: Ordering num ber : EN3102 No.3102 r _ 2 S C 4 4 5 1 NPN Triple Diffused Planar Silicon Transistor High-Voltage Switching Applications F eatures • High breakdown voltage • Small c0b • Wide ASO • High reliability Adoption of II VP process

2sc4710

Contextual Info: S4ÜV0 T r a n s i s t o r s for V e r y H i g h - D e f i n i t i o n C R T D i s p l a y H o r i z o n t a l D e f l e c t i o n O u t p u t Use 3 otc D y n a m i c s F o c u s U s e (No picture ever out of focus with better focus c h a r a c t e r i s t i c s )

T0126M

Contextual Info: SÂmo VI DEO O U TPUT ADOPTION OF F B E T PRO CESS Absolute M aximum Ratings/Ta = 2 5 t! Type Number Case Applications VcBO Vceo ic Electrical C h a r a c te r is t ic s ^ = 2 5 °C Pc T] *TC=•2&V hps fr EVI m lA] m I t"CJ m m {A] m ÎA] 2SC3595 T0126

2SC3997

Abstract: HPA150R 2SC4636 2SC3676 2SC4450 TR 2SC3997 2SC3894 2SC3895 DD52RC DD54RC
Contextual Info: b3 E D • 7 cl t17Q7b DG12M3D QTM » T S A J _ m_ ^ S A f t Y O Transistors for Very High-Definition CRT Display H o r i z o n t a l D e f l e c t i o n O u t p u t U s e 2 & Horizontal Output Use with High-speed Damper Diode (Adoption of MBIT Process)(Ta=25t)

STk442-130

Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Contextual Info: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components

Contextual Info: Electrical characteristics Ta = 25 Absolute maximum ratings Package type Device Applications VCBO (V VCEO (V) Vebo (V) ic (mA) PC <W) Icbo max @ Vcb A Icbo max (HA) Vcb (V) C) hFE @ VCE ' Ic h FE »T @ VcE * Ic fr VcE (V) ic (mA) (MHZ) VcE (V) Ic (mA) 2SC3954

electron gun CRT

Abstract: dyna image 2SC3676 TRANSISTOR T0220 CRT electron gun 2SC3675 2SC4256 2SC4257 2SC471 2SC4451
Contextual Info: Transistors for Very High-Definition CRT Display H o r i z o n t a l D e f l e c t i o n O u t p u t U s e 3 ale D yr'ia.m i cs F o o u s UseNo picture ever out of focus with better focus characteristics High reliability and high breakdown voltage (HVP technology) make it possible to make the grid voltage higher and

horizontal section in crt television

Abstract: Electron Tubes crt DEPLETION electron gun CRT
Contextual Info: ^ 5 1?' 1* 5 1 ° .- J È 1 ° 7i -Q 33-C& ° w 30^ ¥ . • V No p ic Ì & ^ ^ g ig vb |ii.’Qf fo c u s ,';! arriicFocus Transistor M § fe 3 i ; Dynamic focuè' transistor^chip "1; transistors, with Very high withstand, voltage, by HVP process " - . •’

2sc367

Abstract: DEPLETION 2SC445
Contextual Info: SAfitYO T r a n s i s t o r s f o r V e r y H i g h - D e f in i t i o n C R T D i s p l a y H o r i z o n t a l D e f l e c t i o n O u t p u t U s e 3 ale D y n a m i c= F o c u s U s e N o picture ever out of focus with better focus characteristics High 1 el¡ability and high breakdown voltage (HVP technology) make it possible to make the grid voltage higher and

TT2192

Abstract: sma4212 2SJ519 2sc5681 2SK1871 2SC5044 2SK3666 2sc6091 2SC5688 EC4K01KF
Contextual Info: Ordering number : E I 0 0 9 2 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis or discontinued.