2SC4257
Abstract: ITR06568 ITR06569 ITR06570 ITR06571 ITR06572
Text: Ordering number:ENN2925A NPN Triple Diffused Planar Silicon Transistor 2SC4257 1200V/30mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions • High breakdown voltage. · Small Cob. · Wide ASO. · High reliability Adoption of HVP process .
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ENN2925A
2SC4257
200V/30mA
2010C
2SC4257]
O-220AB
2SC4257
ITR06568
ITR06569
ITR06570
ITR06571
ITR06572
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2SC4257
Abstract: EN2925A
Text: Ordering number:EN2925A NPN Triple Diffused Planar Silicon Transistor 2SC4257 1200V/30mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions • High breakdown voltage. · Small Cob. · Wide ASO. · High reliability Adoption of HVP process .
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EN2925A
2SC4257
200V/30mA
2010C
2SC4257]
O-220AB
SC-46
2SC4257
EN2925A
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Untitled
Abstract: No abstract text available
Text: Ordering number:ENN2925A NPN Triple Diffused Planar Silicon Transistor 2SC4257 1200V/30mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions • High breakdown voltage. · Small Cob. · Wide ASO. · High reliability Adoption of HVP process .
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ENN2925A
2SC4257
200V/30mA
2010C
2SC4257]
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STk442-130
Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Text: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components
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100-up)
STk442-130
M56730ASP
PAC011A
PAC010A
UPC2581
PAL005A
stk413-020a
upc2581v
ecg semiconductors master replacement guide
STRS5717
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TT2140
Abstract: transistor TT2140 TT2190 transistor horizontal TT2190 TT2170 TT2190 DATASHEET tt2140 equivalent tt2170 equivalent 2sd2689 inverter transistor TT2140
Text: Ordering number: EP106A Discrete Devices for Video Equipment '04-08 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Telephone: 81- 0 3-3837-6339, 6340, 6342, Facsimile: 81-(0)3-3837-6377 ●SANYO Electric Co.,Ltd. Semiconductor company Homepage
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EP106A
O-220FI5H
TT2140
transistor TT2140
TT2190
transistor horizontal TT2190
TT2170
TT2190 DATASHEET
tt2140 equivalent
tt2170 equivalent
2sd2689
inverter transistor TT2140
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TT2192
Abstract: sma4212 2SJ519 2sc5681 2SK1871 2SC5044 2SK3666 2sc6091 2SC5688 EC4K01KF
Text: Ordering number : E I 0 0 9 2 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis or discontinued.
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2SK1886
2SK4043LS
SB100-09K
TIG004SS
TIG030TS
2SC4493
2SK1887
SB10-18
TIG004T
TT2192
sma4212
2SJ519
2sc5681
2SK1871
2SC5044
2SK3666
2sc6091
2SC5688
EC4K01KF
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EN2925
Abstract: 2SC4257
Text: Ordering number : EN2925 No. 2925 2SC4257 NPN Triple Diffused Planar Silicon Transistor High-Voltage Amp, High-Voltage Switching Applications Features • High breakdown voltage • Small c0b • Wide ASO • High reliability Adoption of H VP process unit
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EN2925
2SC4257
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Untitled
Abstract: No abstract text available
Text: I Ordering number: EN2925 _ _ _ 2SC4257 NPN Triple Diffused Planar Silicon Transistor SANYO i 1200V/30mA High-Voltage Amp, High-Voltage Switching Applications F e a tu re s •High breakdown voltage • Small Cob ■Wide ASO • High reliability Adoption of HVP process
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EN2925
2SC4257
200V/30mA
100pA
2010C
T0220AB
D148MO
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2SC4288A
Abstract: 2SC4288 2sc4292 2sc429 2SC4278 150D 2SC4248 2SC4249 2SC4250 2SC4251
Text: - 194 - m % w Ta=25‘C, *Ep(àTc=25tC m î± 2SC4248 2SC4249 2SC4250 MS 2SC4251 MS MS ms MS sm 2SC4252 2SC4253 2SC4255 2SC4256 2SC4257 2SC4258 2SC4259 2SC4260 2SC4261 2SC4262 2SC4263 2SC4264 2SC4265 2SC4266 2SC4269 2SC4270 2SC4271 2SC4272 2SC4273 2SC4274
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2SC4248
2SC4249
2SC4250
2SC4251
2SC4252
2SC4253
2SC4255
2SC4256
O-126)
2SC4271
2SC4288A
2SC4288
2sc4292
2sc429
2SC4278
150D
2SC4248
2SC4250
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2SC3953
Abstract: TRANSISTOR T0220 2SC3597
Text: Horizontal deflection output composite transistor Absolute maximum ratings _ . I Package . Application T IT Vcbo Vcbo nn (V) HPA72R* T03PBL °"!fk (wilh high-speed damper diode) HPA100R T03PBL “ H PA.M T03PBL * “ “ “ Ä T Vceo Vceo lc >c Electrical characteristics (T, = 25 deg. C)
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HPA72R*
T03PBL
HPA100R
2SC4256
2SC4257
2SC3675
2SC3676
2SC4450
2SC3953
TRANSISTOR T0220
2SC3597
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2sc4710
Abstract: No abstract text available
Text: S4ÜV0 T r a n s i s t o r s for V e r y H i g h - D e f i n i t i o n C R T D i s p l a y H o r i z o n t a l D e f l e c t i o n O u t p u t Use 3 otc D y n a m i c s F o c u s U s e (No picture ever out of focus with better focus c h a r a c t e r i s t i c s )
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Ratings/Ta-25t
2SC4572
2SC4578
2SC4579
T0-220MFs
MT950112TR
2sc4710
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T0126M
Abstract: No abstract text available
Text: SÂmo VI DEO O U TPUT ADOPTION OF F B E T PRO CESS Absolute M aximum Ratings/Ta = 2 5 t! Type Number Case Applications VcBO Vceo ic Electrical C h a r a c te r is t ic s ^ = 2 5 °C Pc T] *TC=•2&V hps fr EVI m lA] m I t"CJ m m {A] m ÎA] 2SC3595 T0126
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2SC3595
2SC3600
2SC3601
2SA14
2SC3596
2SC3598
2SC3599
2SC3597
2SC4271
2SC3650
T0126M
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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2SC3997
Abstract: HPA150R 2SC4636 2SC3676 2SC4450 TR 2SC3997 2SC3894 2SC3895 DD52RC DD54RC
Text: b3 E D • 7 cl t17Q7b DG12M3D QTM » T S A J _ m_ ^ S A f t Y O Transistors for Very High-Definition CRT Display H o r i z o n t a l D e f l e c t i o n O u t p u t U s e 2 & Horizontal Output Use with High-speed Damper Diode (Adoption of MBIT Process)(Ta=25t)
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DG12M3D
T0220FI
DD54RCLS
T0-220
1--f-14
DD52RC
MT930707TR
2SC3997
HPA150R
2SC4636
2SC3676
2SC4450
TR 2SC3997
2SC3894
2SC3895
DD54RC
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Untitled
Abstract: No abstract text available
Text: Electrical characteristics Ta = 25 Absolute maximum ratings Package type Device Applications VCBO (V VCEO (V) Vebo (V) ic (mA) PC <W) Icbo max @ Vcb A Icbo max (HA) Vcb (V) C) hFE @ VCE ' Ic h FE »T @ VcE * Ic fr VcE (V) ic (mA) (MHZ) VcE (V) Ic (mA) 2SC3954
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2SC3954
T0126ML
2SA1537
2SC3952
2SC4636
T0220FI
2SC4637
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electron gun CRT
Abstract: dyna image 2SC3676 TRANSISTOR T0220 CRT electron gun 2SC3675 2SC4256 2SC4257 2SC471 2SC4451
Text: Transistors for Very High-Definition CRT Display H o r i z o n t a l D e f l e c t i o n O u t p u t U s e 3 ale D yr'ia.m i cs F o o u s UseNo picture ever out of focus with better focus characteristics High reliability and high breakdown voltage (HVP technology) make it possible to make the grid voltage higher and
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T0-220FI
T0-220.
T0220FI
MT931223TR
electron gun CRT
dyna image
2SC3676
TRANSISTOR T0220
CRT electron gun
2SC3675
2SC4256
2SC4257
2SC471
2SC4451
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horizontal section in crt television
Abstract: Electron Tubes crt DEPLETION electron gun CRT
Text: ^ 5 1?' 1* 5 1 ° .- J È 1 ° 7i -Q 33-C& ° w 30^ ¥ . • V No p ic Ì & ^ ^ g ig vb |ii.’Qf fo c u s ,';! arriicFocus Transistor M § fe 3 i ; Dynamic focuè' transistor^chip "1; transistors, with Very high withstand, voltage, by HVP process " - . •’
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2SC4633
Abstract: No abstract text available
Text: Ultrahigh-resolution Display Video Output Transistors FBET Absoluto maximum ratings Type No. Packag* Ha* Bad iteli characteristics (Ta •25 TC) ICBO mut VCB Applications VCBO Veto VEBO 1C cw (V) (V) (mA) PC (W) db ICBOmax O.A) bFESVCE ■1C Vca (V) hFE
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T0126
T0126ML
OI26ML
T0I26M
2SC4633
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PDF
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2sc367
Abstract: DEPLETION 2SC445
Text: SAfitYO T r a n s i s t o r s f o r V e r y H i g h - D e f in i t i o n C R T D i s p l a y H o r i z o n t a l D e f l e c t i o n O u t p u t U s e 3 ale D y n a m i c= F o c u s U s e N o picture ever out of focus with better focus characteristics High 1 el¡ability and high breakdown voltage (HVP technology) make it possible to make the grid voltage higher and
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T0-220.
2SC46Í
2SC46
2SC471OLS
2SC48É
MT931223TR
2sc367
DEPLETION
2SC445
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