2SC3876 Search Results

2SC3876 Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
2SC3876		Korea Electronics	Silicon NPN Transistor		Scan	PDF
2SC3876		Unknown	Transistor Substitution Data Book 1993		Scan	PDF
2SC3876		Unknown	Shortform Data and Cross References (Misc Datasheets)		Short Form	PDF
2SC3876		Unknown	Japanese Transistor Cross References (2S)		Scan	PDF
2SC3876S		Korea Electronics	Transistors		Scan	PDF

2SC3876 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2SC3876 Abstract: No abstract text available Text: ST 2SC3876 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, O and Y and according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.	Original	PDF	2SC3876 100mA 400mA 100mA, 2SC3876
2SC3876 Abstract: No abstract text available Text: ST 2SC3876 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, O and Y and according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.	Original	PDF	2SC3876 100mA 400mA 100mA, 2SC3876
2SC3876 Abstract: No abstract text available Text: ST 2SC3876 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, O and Y and according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.	Original	PDF	2SC3876 100mA 400mA 100mA, 2SC3876
2SC3876 Abstract: Collector 5v npn TRANSISTOR Text: ST 2SC3876 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, O and Y and according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.	Original	PDF	2SC3876 100mA 400mA 100mA, 2SC3876 Collector 5v npn TRANSISTOR
2SC3875S Abstract: BC547 BC546 2Sc4370a 2SC3227 2sa1274 2SA1267 2SC3201 BC557 bc556 2sa1659a bc557 Text: This Transistors Electrical Characteristics T a=25°C Applications VCEO fT (TYP) MIN (TYP) MAX VCE f ratnage Its Respective (mA) (mW) (V) (mA) (MHz) (V) (dB) (V) (KHz) 50 150 150 70^700 6 2 0.25 100 10 80 10 1 10 6 0.1 1 10 SOT-23 H 2SA1269 120 100 200	OCR Scan	PDF	Ta-25 2SC3875S 2SA1S04S OT-23 2SC3201 2SA1269 O-92M 2SC3199 2SA1267 BC547 BC546 2Sc4370a 2SC3227 2sa1274 BC557 bc556 2sa1659a bc557
2SC144 Abstract: 2SD466 2sc5266 Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l\|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *	OCR Scan	PDF	T258-OMI FAX06 2SC144 2SD466 2sc5266
2SC4370A Abstract: 2SC3875S 2SA1504S 2SC3227 BC548 ,BC558 2SA1267 bc557 2SA1504 BC337/BC327 2SC3202 Text: 1 Transistors Maximum Ratings KOREA Electrical Characteristics Ta—25°C Type No NPN PNP Ic Pc (V) (mA) (mW) 150 I’fe MAX ^CE (V) Ic (mA) (V) 7 0^700 6 2 0.25 100 fT I« (mA) (MHz) (TYP) MIN ^CE (V) NF IC (mA) (TYP) MAX (dB) VCE (V) •c (mA) f (KHz)	OCR Scan	PDF	2SC387SS 2SA1S04S OT-23 2SC3201 2SA1269 O-92M 2SC3199 2SA1267 2SC3198A 2SC4370A 2SC3875S 2SA1504S 2SC3227 BC548 ,BC558 bc557 2SA1504 BC337/BC327 2SC3202
2SC3133 cross reference Abstract: Hitachi 2sc281 NEC D882 A564A D1163A 2sC1815 cross reference a628a krc1211 KRA2203 NEC D288 Text: CROSS REFERENCE GUIDE TRANSISTORS TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG 2N 3903 M O TO RO LA 2N 3903 2SA1052 KSA812 2SA1298 T O S H IB A KSA1298 2N 3904 M O TO RO LA 2N 3904 2SA1072A FUJITSU KSA1050 2SA1299 M ITS UB ISH I KSA1174 2N 3905	OCR Scan	PDF	2N4401 2N5401 2N5551 2SA1004 2SA1010 2SA1013 2SA1015 2SA1016 2SA1017 2SA1019 2SC3133 cross reference Hitachi 2sc281 NEC D882 A564A D1163A 2sC1815 cross reference a628a krc1211 KRA2203 NEC D288