2SC3356 s2p
Abstract: 2SC3356 2SC3356-A NE85633-T1B-A 2SC3356-T1B-A
Text: A Business Partner of Renesas Electronics Corporation. Preliminary NE85633 / 2SC3356 Data Sheet R09DS0021EJ0300 Rev.3.00 NPN Silicon RF Transistor Jun 28, 2011 NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold FEATURES
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NE85633
2SC3356
R09DS0021EJ0300
2SC3356
NE85633-T1B
2SC3356-T1B
NE85633-A
2SC3356-A
NE85633-T1B-A
2SC3356 s2p
2SC3356-T1B-A
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2SC3356-T1B-A
Abstract: 2SC3356 2SC3356 s2p 2SC3356-T1B
Text: PreliminaryData Sheet 2SC3356 R09DS0021EJ0300 Rev.3.00 NPN Silicon RF Transistor Jun 28, 2011 NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz
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2SC3356
R09DS0021EJ0300
2SC3356
2SC3356-T1B
2SC3356-A
2SC3356-T1B-A
2SC3356 s2p
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2SC3356 s2p
Abstract: 2SC3356 Application Note 2SC3356 nec marking 2sc3356
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC3356 NPN EPITAXIAL SILICON RF TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz
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2SC3356
2SC3356-T1
2SC3356 s2p
2SC3356 Application Note
2SC3356
nec marking 2sc3356
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2SC3356 s2p
Abstract: 2SC3356 Application Note 2SC3356-T1B 2SC3356 R24 marking DATASHEET TRANSISTOR 2sc3356
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC3356 NPN EPITAXIAL SILICON RF TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz
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2SC3356
2SC3356-T1B
2SC3356 s2p
2SC3356 Application Note
2SC3356-T1B
2SC3356
R24 marking DATASHEET
TRANSISTOR 2sc3356
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2SC3356 s2p
Abstract: 2SC3356 Application Note 2SC3356 2SC3356-T1B
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2sc3356
Abstract: 2SC3356-T1B 2SC3356 s2p marking r25 NPN 2SC3356 r25 TRANSISTOR 2sc3356
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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2SC3356
2SC3356-T1B
VCB30°
PU10209JJ02V0DS
L044-435-1588
X044-435-1579
2sc3356
2SC3356-T1B
2SC3356 s2p
marking r25 NPN
2SC3356 r25
TRANSISTOR 2sc3356
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