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    2SC278 Search Results

    2SC278 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC2780-T1-AZ Renesas Electronics Corporation Small Signal Bipolar Transistors, POMM, / Visit Renesas Electronics Corporation
    2SC2780-AZ Renesas Electronics Corporation Small Signal Bipolar Transistors, POMM, / Visit Renesas Electronics Corporation
    2SC2784-T-A Renesas Electronics Corporation Bipolar Power Transistors Visit Renesas Electronics Corporation
    2SC2785-A Renesas Electronics Corporation Bipolar Power Transistors Visit Renesas Electronics Corporation
    2SC2784-A Renesas Electronics Corporation Bipolar Power Transistors, , / Visit Renesas Electronics Corporation
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    2SC278 Price and Stock

    NEC Electronics Group 2SC2785

    Bipolar Junction Transistor, NPN Type, TO-221VAR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SC2785 592
    • 1 $13.0725
    • 10 $13.0725
    • 100 $13.0725
    • 1000 $8.715
    • 10000 $8.715
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    Others 2SC2786

    Bipolar Junction Transistor, NPN Type, TO-221VAR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SC2786 31
    • 1 $0.45
    • 10 $0.45
    • 100 $0.375
    • 1000 $0.375
    • 10000 $0.375
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    Others 2SC2787

    Bipolar Junction Transistor, NPN Type, TO-221VAR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SC2787 25
    • 1 $0.39
    • 10 $0.39
    • 100 $0.325
    • 1000 $0.325
    • 10000 $0.325
    		Buy Now

    Renesas Electronics Corporation 2SC2780T1

    Transistor
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA 2SC2780T1 6,000
    • 1 -
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    2SC278 Datasheets (117)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC278 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC2780 Kexin NPN Silicon Epitaxial Transistor Original PDF
    2SC2780 NEC Semiconductor Selection Guide 1995 Original PDF
    2SC2780 NEC Semiconductor Selection Guide Original PDF
    2SC2780 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC2780 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC2780 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC2780 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC2780 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC2780 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC2780 NEC NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD Scan PDF
    2SC2780 NEC Silicon Transistor Scan PDF
    2SC2780NK NEC NPN Silicon Epitaxial Transistor Power Mini Mold Scan PDF
    2SC2780NL NEC NPN Silicon Epitaxial Transistor Power Mini Mold Scan PDF
    2SC2780NM NEC NPN Silicon Epitaxial Transistor Power Mini Mold Scan PDF
    2SC2780-T1 NEC Silicon Transistor Scan PDF
    2SC2780-T2 NEC Silicon Transistor Scan PDF
    2SC2781 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC2781 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC2782 Advanced Semiconductor Transistor Original PDF

    2SC278 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC2788

    Abstract: No abstract text available
    Text: Inchange Semiconductor Product Specification 2SC2788 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High breakdown voltage ·Fast switching speed ·Wide area of safe operation APPLICATIONS ·For switching regulator applications PINNING PIN


    Original     		PDF 2SC2788 2SC2788

    NPN 2SC2782

    Abstract: transistor 2sc2782 2SC2782
    Text: 2SC2782 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782 VHF BAND POWER AMPLIFIER APPLICATIONS Unit in mm Output Power : Po = 80W Min. (f = 175MHz, VCC = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage


    Original     		PDF 2SC2782 175MHz, 2-13C1A 000707EAA1 175MHz NPN 2SC2782 transistor 2sc2782 2SC2782

    2SC2784

    Abstract: No abstract text available
    Text: ST 2SC2784 NPN Silicon Epitaxial Planar Transistor Audio frequency low noise amplifier. The transistor is subdivided into four groups, P, F, E and U according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SC2784 2SC2784

    2SC2786

    Abstract: No abstract text available
    Text: ST 2SC2786 NPN Silicon Epitaxial Planar Transistor for FM RF amplifier and local oscillator of FM tuner. The transistor is subdivided into three groups M, L, and K, according to its DC current gain. On special request, these transistors manufactured in different pin configurations.


    Original     		PDF 2SC2786 100MHz 2SC2786

    2SC2786

    Abstract: S9015LT1
    Text: 2SC2786 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER,LOW LEVEL&LOW NOISE * Complement to S9015LT1 * Collector Current: Ic= 100mA * Collector-Emitter Voltage:Vce= 45V * High Total Power Dissipation:Pc=225mW * High Hfe And Good Linearity 1. ABSOLUTE MAXIMUM RATINGS at Ta=25


    Original     		PDF 2SC2786 S9015LT1 100mA 225mW 100mA 062in 300uS 2SC2786 S9015LT1

    Untitled

    Abstract: No abstract text available
    Text: 2SC2783 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)36 I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)


    Original     		PDF 2SC2783

    2SC2785

    Abstract: No abstract text available
    Text: ST 2SC2785 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SC2785 100mA, 2SC2785

    Untitled

    Abstract: No abstract text available
    Text: 2SC2789 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)500 I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)80 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2SC2789

    Untitled

    Abstract: No abstract text available
    Text: 2SC2785 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)50è V(BR)CBO (V)60 I(C) Max. (A)100m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.200 h(FE) Max. Current gain.


    Original     		PDF 2SC2785 Freq250M

    10,7mhz

    Abstract: 2SC2787
    Text: ST 2SC2787 NPN Silicon Epitaxial Planar Transistor for FM RF amp, mixer, osc, converter and IF amplifier. The transistor is subdivided into three groups M, L, and K according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SC2787 100MHz 10,7mhz 2SC2787

    2SC2787

    Abstract: No abstract text available
    Text: ST 2SC2787 NPN Silicon Epitaxial Planar Transistor for FM RF amp, mixer, osc, converter and IF amplifier. The transistor is subdivided into three groups M, L, and K according to its DC current gain. On special request, these transistors manufactured in different pin configurations.


    Original     		PDF 2SC2787 100MHz 2SC2787

    2SC2786

    Abstract: No abstract text available
    Text: ST 2SC2786 NPN Silicon Epitaxial Planar Transistor for FM RF amplifier and local oscillator of FM tuner. The transistor is subdivided into three groups M, L, and K, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SC2786 100MHz 2SC2786

    2SC2785

    Abstract: transistor 2sc2785
    Text: ST 2SC2785 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SC2785 100mA, 2SC2785 transistor 2sc2785

    2SC2784

    Abstract: transistor amplifier 5v to 6v
    Text: ST 2SC2784 NPN Silicon Epitaxial Planar Transistor Audio frequency low noise amplifier. The transistor is subdivided into four groups, P, F, E and U according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SC2784 2SC2784 transistor amplifier 5v to 6v

    2SC3199

    Abstract: 2SK596 2SA733S 2SC945S 2SK156 2SC2710 2SC2785 2SC2786 2SC2787 2SC3488
    Text: TO-92S PACKAGE MX MICROELECTRONICS ● Applied for TV,AV and buzzers amplifiers. NPN TYPE ICBO OR Ptot Ic VCBO VCEO * ICEO ▲ ICES 2SC3199 2SC1815S 2SC945S 2SC1959S 2SA1015S 2SA733S 2SC2785 2SC2786 2SC2787 2SC3488 2SC2710 2SC1740S 2SC1741S AD825 VCES VCB


    Original     		PDF O-92S 2SC3199 2SC1815S 2SC945S 2SC1959S 2SA1015S 2SA733S 2SC2785 2SC2786 2SC2787 2SC3199 2SK596 2SA733S 2SC945S 2SK156 2SC2710 2SC2785 2SC2786 2SC2787 2SC3488

    33PFX4

    Abstract: 2SC2782 NPN 2SC2782 transistor 2sc2782 18W 12 transistor 1BW TRANSISTOR 10ID 10A ferrite bead 132pF 156pF
    Text: TO SHIBA 2SC2782 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782 VHF BAND POWER AMPLIFIER APPLICATIONS • Unit in mm Output Power : Po = 80W Min. (f= 175MHz, V e e = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING


    OCR Scan     		PDF 2SC2782 175MHz, 2-13C1A 961001EAA2' 33PFX4 2SC2782 NPN 2SC2782 transistor 2sc2782 18W 12 transistor 1BW TRANSISTOR 10ID 10A ferrite bead 132pF 156pF

    D1351

    Abstract: 2SC2785 LHI 648 transistor C982 MA 7824 CI 4011 ES0276 2SA1175 2SC278 ditty
    Text: 5 s — 5 ? • S / — h Silicon Transistor 2SC2785 4« # f f i : nun » o t ë ü & it t is , fö ü & X 'f 7 f > / , 100 m A £ ? 0 0 & í í 2,0 ±0,2 4.0 ± 0 .ï t i x f ò m ? £ t t 0 0 # » Œ T , HF E ^ V C EO : 50 ^ ^ n - C v ^ 1 - 0 u V hpEÍO.l m A ) / h FE(1.0 mA) : 0.92(TYP.)


    OCR Scan     		PDF 2SA1175 D13518JJ5VODSOO TC-5497C) 2SC2785 D1351 2SC2785 LHI 648 transistor C982 MA 7824 CI 4011 ES0276 2SC278 ditty

    2SC2784

    Abstract: T460-8525 transistor 2 FC 945
    Text: "T — S • S /— h '> < ; = ! > h 9 S illic o n T r a n s is t o r 2SC2784 N P N i + 1J =3 > h ^ W-MM -¥•££ ^ mm O f ii8 X T l/ t i0 3 > et i m îu î s ü r a ü n æ h n — t l y 7 ° ^ x W \ ^ m i% , /s” 7 — T > ~ f < T ) - c s a t - r „


    OCR Scan     		PDF 2SC2784 100kn 02SA11741 D13490JJ4VODSOO TC-5505B) 2SC2784 T460-8525 transistor 2 FC 945

    2SA1174

    Abstract: 2SC2784 RA03 VCE-60
    Text: NEC DESCRIPTION NPN SILICON TRANSISTOR 2SC2784 The 2SC2784 isthe best fo r use as the middle range am plifier in PACKAGE DIMENSIONS Hi-Fi stereo control amplifiers, power amplifiers, and etc. FEATURES • High voltage. in millimeters inches 4.2 M A X . V CE0 : 120 V


    OCR Scan     		PDF 2SC2784 2SA1174 2SC2784 RA03 VCE-60

    C2787

    Abstract: No abstract text available
    Text: NEC NPN SILICO N TRAN SISTO R ELECTRON DEVICE 2SC2787 DESCRIPTIO N The 2SC2787 is designed fo r use in A M converter, A M /F M IF PAC K A G E D IM E N S IO N S am p lifie r and local oscillator o f A M /F M tuner. in m illim e te rs FE A TU R E S 4 0 ± 0 .2


    OCR Scan     		PDF 2SC2787 2SC2787 C2787

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC / SILICON TRANSISTOR _ / 2SC2780 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2SC2780 is designed fo r audio frequency pre a m p lifie r app lica tion, especially in H y b rid Integrated Circuits, FEATURES PACKAGE DIMENSIONS


    OCR Scan     		PDF 2SC2780 2SC2780 A1173

    2SC2780

    Abstract: 2SA1173
    Text: SILICON TRANSISTOR 2SC2780 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLO DE SC R IPTIO N The 2SC2780 is designed for audio frequency preamplifier application, especially in Hybrid Integrated Circuits. FE A TU R E S PACKAG E D IM E N S IO N S • World Standard Miniature Package


    OCR Scan     		PDF 2SC2780 2SC2780 2SA1173

    NEC 2701

    Abstract: NEC 2703 2701 NEC NEC 2705 2SC2724 2sc2257 2sc2786 2674 k 2679 2SC2911
    Text: 144 - a s T ype No. € Manuf. 2SC 2663 X 2SC 2665 if y 'r y H $ SANYO 2 2SC 2668 |C 2SC 2669 S 2 2SC 267Û K 2 2SC 2671 * fé T 2SC 2672 a M 2SC 2673 / □ —A 2SC 2674 2SC 2675 2SC2724 2SC2926S 2SC2787 2SC2724 2SC2058S 2SC2724 2SC2058S 2SC3776 2SC3128 2SC 267KH


    OCR Scan     		PDF 2SC3608 2SD1238 2SC2999 2SC2786 2SC2724 2SC2926S 2SC2210 2SC2787 2SC2058S NEC 2701 NEC 2703 2701 NEC NEC 2705 2sc2257 2sc2786 2674 k 2679 2SC2911

    C2787

    Abstract: 2SC2787
    Text: NEC D E S C R IP T IO N NPN SILICON TRANSISTOR 2SC2787 T he 2 S C 2 7 8 7 is designed fo r use in A M converter, A M /F M IF P A C K A G E D IM E N S IO N S a m p lifie r and local oscillator of A M /F M tuner. in millimeters inches 4.2 M A X . FEATURES


    OCR Scan     		PDF 2SC2787 C2787 2SC2787