2SC264 Search Results

2SC2640

Abstract: pj 71
Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2640 Unit in mm VHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : Output Power : Po=28W Min, ( f=175MHz, VCC=12.5V, Pi=4W ) 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ VCC=14.5V, Pj=4W, f=175MHz

2SC2641

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2641 U n i t in m m UHF BAND POWER A MPLIFIER APPLICATIONS. FEATURES : . Output Power : P 0=6W Min. ( f = 4 7 0 M H z , V CC=12.6V, Pi=lW) . 1 0 0 % T e s t e d fo r L o a d M i s m a t c h S t r e s s at A l l P h a s e

Contextual Info: T O S H IB A 2SC2644 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2644 Unit in mm V H F- U H F BAND W ID EBA N D AM PLIFIER APPLICATIONS. 5.1 M A X . • • • High Gain Low IMD fp = 4GHz Typ. M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: T O SH IB A 2SC2642 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 7 ^ f ? fi J 7 UHF BAND POWER AMPLIFIER APPLICATIONS • U nit in mm O utput Power : Po = 12W Min. (f= 470MHz, V c c = 12.6V, Pi = 3W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL

2SC2644

Contextual Info: TOSHIBA 2SC2644 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2644 Unit in mm VHF-UHF BAND WIDEBAND AMPLIFIER APPLICATIONS. 5 .1 M A X . , • • • High Gain Low IMD fp = 4GHz Typ. 0 .5 5 M A X . 0.45 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

2SC2640

Abstract: 12ID GP 84
Contextual Info: TOSHIBA 2SC2640 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2640 VHF BAND POWER AMPLIFIER APPLICATIONS Unit in mm Output Power : Po = 28W Min. (f = 175MHz, V ee = 12.5V, Pi = 4W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING UNIT

2SC2643

Abstract: 10ID
Contextual Info: TOSHIBA 2SC2643 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2643 UHF BAND POWER AMPLIFIER APPLICATIONS Unit in mm Output Power : Po = 25W Min. (f= 470MHz, V e e = 12.6V, Pi = 8W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING UNIT

2SC2644

Contextual Info: TO SH IBA _ 2SC2644 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2644 Unit in mm VH F-U HF BAND WIDEBAND AMPLIFIER APPLICATIONS • • « High Gain Low IMD fp = 4 GHz Typ. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

2SC2644

Contextual Info: TOSHIBA 2SC2644 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2644 VHF-UHF BAND WIDEBAND AMPLIFIER APPLICATIONS. CHARACTERISTIC Transition Frequency Insertion Gain Noise Figure SYMBOL fT |S2lel2 D Unit in mm TEST CONDITION MIN. VCE = 10V, I c = 30mA

Contextual Info: 2SC2646 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)30 I(C) Max. (A)50m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)125õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

2SC636

Abstract: 2sc635 MHW820-1 TP3008 2SC2897 SD1477 2sc2652 TP3034 2SC1804 SD1470
Contextual Info: POWER RF CROSS REFERENCE INDUST RY STANDARD 2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC1968A 2SC2082 2SC2100 2SC2101 2SC2102 2SC2103A 2SC2105 2SC2181 2SC2282 2SC2290 2SC2420 2SC2508 2SC2510 SC2628 2SC2629 2SC2630 2SC2642

470MH

Abstract: 2SC2643 ferite 02MF
Contextual Info: 2SC2643 SILICON NPN EPITAXIAL PLAN AR T Y P E Unit in mm UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : . Output Power : P0=25W Min. (f=470MHz, Vcc=12.6Vs Pi=8W) . 100% Tested for Load Mismatch Stress at all Phase Angles with 30:1 VSWR 0 Vcc~12.6V, Pi~8W, f=470MHz

2SC2644

Contextual Info: 2SC2644 SILICQN NPN EPITAXIAL PLANAR TYPE TRANSISTOR V H F - U H F B A N D W ID E B A N D A M P LIFIE R APPLIC A TIO N S. • • • U n i t in m m High Gain Low IMD frr = 4GHz Typ. M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage

2SC2644

Contextual Info: 2SC2644 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2644 VHF~UHF Band Wideband Amplifier Applications • High gain · Low IMD · fT = 4 GHz typ. Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO

Contextual Info: TOSHIBA 2SC2641 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Weight : 1.9g ELECTRICAL CHARACTERISTICS Te = 25°C CHARACTERISTIC Collector Cut-off Current SYMBOL ICBO TEST CONDITION VnB = 15V) IR = 0 Collector-Base Breakdown Voltage VfBRlCBO IC = 2mA, Ie = 0

Contextual Info: 2SC2641 TOSHIBA TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 1 ç C 1 fi A 1 Unit in mm UHF B AN D POWER AMPLIFIER APPLICATIONS • Output Power : Po = 6W Min. (f= 470MHz, V cc = 12.6V, Pi = lW) M A X IM U M RATINGS (Tc = 25°C) CHARACTERISTIC Collector-Base Voltage

Contextual Info: TO SHIBA 2SC2643 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC 2643 UHF BAND POWER AMPLIFIER APPLICATIONS U n it in mm Output Power : Po = 25W Min. (f= 470MHz, V çc = 12.6V, Pi = 8W) MAXIMUM RATINGS (Tc = 25°C) UNIT V V V vebo A 1. EMITTER ic

2sc4496a

Abstract: 2SD3181 2Sc3246 2sc3928 2SC3209 4468 2SC2644 2SD1404 2SD773 2sc3514
Contextual Info: - SI « T y p e No. tt « Manuf. Z i# SANYO it 2? TOSHIBA ÌL 2SC4403 ÎL 2SC4854 2SC2644 2 SC 4468 ^ V- v i r v 2SD1047 2SC3182N 2SC 4469 * ± S 1 * 2SC 4470 * 2SC 4472 n —U — :í¿ 2SC 4473 _ 2SC 4474 3 # 2SC 4477 h m NEC HITACHI 2SC4478 ± Ä F U JITSU

Contextual Info: TO SHIBA 2SC2642 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2642 Unit in mm UHF BAND POWER AMPLIFIER APPLICATIONS. • Output Power : Po = 12W Min. (f= 470MHz, V ee = 12.6V, Pi = 3W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector-Base Voltage

10ID

Abstract: 2SC2642
Contextual Info: TOSHIBA 2SC2642 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2642 Unit in mm UHF BAND POWER AMPLIFIER APPLICATIONS Output Power : Po = 12W Min. (f= 470MHz, V e e = 12.6V, Pi = 3W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING UNIT

2SC2647

Contextual Info: Transistor 2SC2647 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 6.9±0.1 1.0 1.0 R 0.85 4.5±0.1 0. 7 2.4±0.2 2.0±0.2 3.5±0.1 ● Optimum for RF amplification, oscillation, mixing, and IF of FM/ AM radios. M type package allowing easy automatic and manual insertion as

2SC2647

Contextual Info: Transistors 2SC2647 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm 2.5±0.1 1.0 (1.0) (1.5) R 0.9 2.4±0.2 4.1±0.2 2.0±0.2 R 0.7 4.5±0.1 3.5±0.1 (1.5) 1.0±0.1 • Optimum for RF amplification, oscillation, mixing, and IF of

2SC2647

Contextual Info: Transistors 2SC2647 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm 2.5±0.1 1.0 (1.0) (1.5) (1.5) R 0.9 2.4±0.2 1.0±0.1 • Absolute Maximum Ratings Ta = 25°C (0.85) Rating Unit Collector-base voltage (Emitter open) VCBO 30

Contextual Info: TOSHIBA 2SC2642 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2642 Unit in mm UHF BAND POWER AMPLIFIER APPLICATIONS. Output Power : Po = 12W Min. (f= 470MHz, VCC = 12.6V, Pi = 3W) MAXIMUM RATINGS (Tc = 25°C) UNIT V V V 1. EMITTER A 2. BASE 3. EMITTER