Untitled
Abstract: No abstract text available
Text: 2SC2646 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)30 I(C) Max. (A)50m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)125õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)
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2SC2646
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2SC636
Abstract: 2sc635 MHW820-1 TP3008 2SC2897 SD1477 2sc2652 TP3034 2SC1804 SD1470
Text: POWER RF CROSS REFERENCE INDUST RY STANDARD 2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC1968A 2SC2082 2SC2100 2SC2101 2SC2102 2SC2103A 2SC2105 2SC2181 2SC2282 2SC2290 2SC2420 2SC2508 2SC2510 SC2628 2SC2629 2SC2630 2SC2642
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2SC1257
2SC1258
2SC1259
2SC1605A
2SC1729
2SC1804
2SC1805
2SC1946
2SC1946A
2SC1967
2SC636
2sc635
MHW820-1
TP3008
2SC2897
SD1477
2sc2652
TP3034
2SC1804
SD1470
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PDF
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2SC2644
Abstract: No abstract text available
Text: 2SC2644 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2644 VHF~UHF Band Wideband Amplifier Applications • High gain · Low IMD · fT = 4 GHz typ. Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO
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2SC2644
SC-43
2SC2644
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2SC2647
Abstract: No abstract text available
Text: Transistor 2SC2647 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 6.9±0.1 1.0 1.0 R 0.85 4.5±0.1 0. 7 2.4±0.2 2.0±0.2 3.5±0.1 ● Optimum for RF amplification, oscillation, mixing, and IF of FM/ AM radios. M type package allowing easy automatic and manual insertion as
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2SC2647
2SC2647
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2SC2647
Abstract: No abstract text available
Text: Transistors 2SC2647 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm 2.5±0.1 1.0 (1.0) (1.5) R 0.9 2.4±0.2 4.1±0.2 2.0±0.2 R 0.7 4.5±0.1 3.5±0.1 (1.5) 1.0±0.1 • Optimum for RF amplification, oscillation, mixing, and IF of
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2SC2647
2SC2647
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2SC2647
Abstract: No abstract text available
Text: Transistors 2SC2647 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm 2.5±0.1 1.0 (1.0) (1.5) (1.5) R 0.9 2.4±0.2 1.0±0.1 • Absolute Maximum Ratings Ta = 25°C (0.85) Rating Unit Collector-base voltage (Emitter open) VCBO 30
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2SC2647
2SC2647
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2SC2640
Abstract: pj 71
Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2640 Unit in mm VHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : Output Power : Po=28W Min, ( f=175MHz, VCC=12.5V, Pi=4W ) 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ VCC=14.5V, Pj=4W, f=175MHz
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2SC2640
175MHz,
175MHz
2SC2640
pj 71
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2SC2641
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2641 U n i t in m m UHF BAND POWER A MPLIFIER APPLICATIONS. FEATURES : . Output Power : P 0=6W Min. ( f = 4 7 0 M H z , V CC=12.6V, Pi=lW) . 1 0 0 % T e s t e d fo r L o a d M i s m a t c h S t r e s s at A l l P h a s e
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2SC2641
470MHz
470MHz,
470MHz
2SC2641
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PDF
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Untitled
Abstract: No abstract text available
Text: T O S H IB A 2SC2644 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2644 Unit in mm V H F- U H F BAND W ID EBA N D AM PLIFIER APPLICATIONS. 5.1 M A X . • • • High Gain Low IMD fp = 4GHz Typ. M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC
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2SC2644
961001EAA2'
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PDF
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SC2642 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 7 ^ f ? fi J 7 UHF BAND POWER AMPLIFIER APPLICATIONS • U nit in mm O utput Power : Po = 12W Min. (f= 470MHz, V c c = 12.6V, Pi = 3W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL
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2SC2642
470MHz,
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PDF
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2SC2644
Abstract: No abstract text available
Text: TOSHIBA 2SC2644 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2644 Unit in mm VHF-UHF BAND WIDEBAND AMPLIFIER APPLICATIONS. 5 .1 M A X . , • • • High Gain Low IMD fp = 4GHz Typ. 0 .5 5 M A X . 0.45 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC
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2SC2644
55MAX.
SC-43
961001EAA2'
2SC2644
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2SC2640
Abstract: 12ID GP 84
Text: TOSHIBA 2SC2640 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2640 VHF BAND POWER AMPLIFIER APPLICATIONS Unit in mm Output Power : Po = 28W Min. (f = 175MHz, V ee = 12.5V, Pi = 4W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING UNIT
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2SC2640
175MHz,
175MHz
2SC2640
12ID
GP 84
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2SC2643
Abstract: 10ID
Text: TOSHIBA 2SC2643 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2643 UHF BAND POWER AMPLIFIER APPLICATIONS Unit in mm Output Power : Po = 25W Min. (f= 470MHz, V e e = 12.6V, Pi = 8W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING UNIT
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2SC2643
470MHz,
961001EAA2'
2SC2643
10ID
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PDF
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2SC2644
Abstract: No abstract text available
Text: TO SH IBA _ 2SC2644 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2644 Unit in mm VH F-U HF BAND WIDEBAND AMPLIFIER APPLICATIONS • • « High Gain Low IMD fp = 4 GHz Typ. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC
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2SC2644
SC-43
000707EAA1
500MHz
2SC2644
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470MH
Abstract: 2SC2643 ferite 02MF
Text: 2SC2643 SILICON NPN EPITAXIAL PLAN AR T Y P E Unit in mm UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : . Output Power : P0=25W Min. (f=470MHz, Vcc=12.6Vs Pi=8W) . 100% Tested for Load Mismatch Stress at all Phase Angles with 30:1 VSWR 0 Vcc~12.6V, Pi~8W, f=470MHz
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2SC2643
470MHz,
470MHz
-10mA,
470MH
P0-25W
470MHz
01-uF
2SC2643
ferite
02MF
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2SC2644
Abstract: No abstract text available
Text: 2SC2644 SILICQN NPN EPITAXIAL PLANAR TYPE TRANSISTOR V H F - U H F B A N D W ID E B A N D A M P LIFIE R APPLIC A TIO N S. • • • U n i t in m m High Gain Low IMD frr = 4GHz Typ. M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage
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2SC2644
SC-43
S21eJ!
2SC2644
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC2640 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C2 64 0 VHF BAND POWER AMPLIFIER APPLICATIONS U n i t in m m Output Power : Po = 28W Min. (f= 175MHz, V c c = 12.5V, Pi = 4W) M A X IM U M RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL
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2SC2640
175MHz,
-30pF
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC2641 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Weight : 1.9g ELECTRICAL CHARACTERISTICS Te = 25°C CHARACTERISTIC Collector Cut-off Current SYMBOL ICBO TEST CONDITION VnB = 15V) IR = 0 Collector-Base Breakdown Voltage VfBRlCBO IC = 2mA, Ie = 0
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2SC2641
02/zF
961001EAA2'
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SC2641 TOSHIBA TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 1 ç C 1 fi A 1 Unit in mm UHF B AN D POWER AMPLIFIER APPLICATIONS • Output Power : Po = 6W Min. (f= 470MHz, V cc = 12.6V, Pi = lW) M A X IM U M RATINGS (Tc = 25°C) CHARACTERISTIC Collector-Base Voltage
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2SC2641
470MHz,
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PDF
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SC2643 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC 2643 UHF BAND POWER AMPLIFIER APPLICATIONS U n it in mm Output Power : Po = 25W Min. (f= 470MHz, V çc = 12.6V, Pi = 8W) MAXIMUM RATINGS (Tc = 25°C) UNIT V V V vebo A 1. EMITTER ic
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2SC2643
470MHz,
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PDF
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2sc4496a
Abstract: 2SD3181 2Sc3246 2sc3928 2SC3209 4468 2SC2644 2SD1404 2SD773 2sc3514
Text: - SI « T y p e No. tt « Manuf. Z i# SANYO it 2? TOSHIBA ÌL 2SC4403 ÎL 2SC4854 2SC2644 2 SC 4468 ^ V- v i r v 2SD1047 2SC3182N 2SC 4469 * ± S 1 * 2SC 4470 * 2SC 4472 n —U — :í¿ 2SC 4473 _ 2SC 4474 3 # 2SC 4477 h m NEC HITACHI 2SC4478 ± Ä F U JITSU
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2SC4403
2SC4187
2SC4854
2SC2644
2SD1047
2SC3182N
2SC2989
2SC4278
2SC3307
2SC3508
2sc4496a
2SD3181
2Sc3246
2sc3928
2SC3209
4468
2SC2644
2SD1404
2SD773
2sc3514
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PDF
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SC2642 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2642 Unit in mm UHF BAND POWER AMPLIFIER APPLICATIONS. • Output Power : Po = 12W Min. (f= 470MHz, V ee = 12.6V, Pi = 3W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector-Base Voltage
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OCR Scan
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2SC2642
470MHz,
02//F
961001EAA2'
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PDF
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10ID
Abstract: 2SC2642
Text: TOSHIBA 2SC2642 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2642 Unit in mm UHF BAND POWER AMPLIFIER APPLICATIONS Output Power : Po = 12W Min. (f= 470MHz, V e e = 12.6V, Pi = 3W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING UNIT
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OCR Scan
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2SC2642
470MHz,
470MHz
961001EAA2'
10ID
2SC2642
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC2642 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2642 Unit in mm UHF BAND POWER AMPLIFIER APPLICATIONS. Output Power : Po = 12W Min. (f= 470MHz, VCC = 12.6V, Pi = 3W) MAXIMUM RATINGS (Tc = 25°C) UNIT V V V 1. EMITTER A 2. BASE 3. EMITTER
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2SC2642
470MHz,
02//F
5X20X0
961001EAA2'
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PDF
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