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    2SC259 Search Results

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    2SC259 Price and Stock

    Panasonic Electronic Components 2SC25900Q

    TRANS NPN 120V 0.5A TO-126B-A1
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    Panasonic Electronic Components 2SC2592

    POWER BIPOLAR TRANSISTOR, 1A I(C), 180V V(BR)CEO, 1-ELEMENT, NPN, SILICON, TO-220AB, PLASTIC/EPOXY, 3 PIN
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    Quest Components 2SC2592 177
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    2SC259 Datasheets (84)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC259 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC259 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC259 Unknown Cross Reference Datasheet Scan PDF
    2SC259 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC259 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC259 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC259 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC2590 Panasonic Silicon NPN Transistor Original PDF
    2SC2590 Panasonic NPN Transistor Original PDF
    2SC2590 Panasonic Silicon NPN epitaxial planar type Original PDF
    2SC2590 Various Russian Datasheets Transistor Original PDF
    2SC2590 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SC2590 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC2590 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC2590 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC2590 Unknown Cross Reference Datasheet Scan PDF
    2SC2590 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SC2590 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC2590 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC2590 Unknown The Japanese Transistor Manual 1981 Scan PDF

    2SC259 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SC2591

    Abstract: 2SC2592
    Text: Inchange Semiconductor Product Specification 2SC2591 2SC2592 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SA1111/1112 ・Good linearity of hFE ・High VCEO APPLICATIONS ・For audio frequency, high power amplifiers application


    Original     		2SC2591 2SC2592 O-220 2SA1111/1112 O-220) 2SC2591 500mA 2SC2592 PDF

    2SC2594

    Abstract: No abstract text available
    Text: Inchange Semiconductor Product Specification 2SC2594 Silicon NPN Power Transistors • DESCRIPTION ·With TO-126 package ·Low saturation voltage APPLICATIONS ·AF power amplifier ·For electronic flash unit ·Converter PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to


    Original     		2SC2594 O-126 -50mA 2SC2594 PDF

    2SA1112

    Abstract: 2Sa1111
    Text: Inchange Semiconductor Product Specification 2SA1111 2SA1112 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC2591/2592 ·Good linearity of hFE ·High VCEO APPLICATIONS ·For audio frequency, high power amplifiers application


    Original     		2SA1111 2SA1112 O-220 2SC2591/2592 O-220) 2SA1111 -120V; 2SA1112 PDF

    2SC2594

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SC2594 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Low saturation voltage APPLICATIONS ·AF power amplifier ·For electronic flash unit ·Converter PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to


    Original     		2SC2594 O-126 -50mA 2SC2594 PDF

    2Sa1111

    Abstract: 2SA1112
    Text: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1111 2SA1112 DESCRIPTION •With TO-220 package ·Complement to type 2SC2591/2592 ·Good linearity of hFE ·High VCEO APPLICATIONS ·For audio frequency, high power amplifiers application


    Original     		2SA1111 2SA1112 O-220 2SC2591/2592 O-220) 2SA1111 -120V; 2SA1112 PDF

    2SA1111

    Abstract: 2SC2591
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1111 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -150V (Min) ·Good Linearity of hFE ·Complement to Type 2SC2591 APPLICATIONS ·Designed for audio frequency drivers and high power


    Original     		2SA1111 -150V 2SC2591 -500mA; -50mA -150mA; 2SA1111 2SC2591 PDF

    2SA1110

    Abstract: 2SC2590
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1110 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -120V (Min) ·Good Linearity of hFE ·Complement to Type 2SC2590 APPLICATIONS ·Designed for audio frequency power amplifier applications.


    Original     		2SA1110 -120V 2SC2590 -300mA; -30mA -150mA; -500mA; 2SA1110 2SC2590 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC2594 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)40 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)10# Maximum Operating Temp (øC)150õ I(CBO) Max. (A)0.1u @V(CBO) (V) (Test Condition)10 h(FE) Min. Current gain.140 h(FE) Max. Current gain.450


    Original     		2SC2594 Freq150MÃ StyleTO-126 Code3-140 PDF

    high frequency transistor

    Abstract: 2SC2952 2sc2592 S21E NPN silicon high frequency transistor
    Text: 2SC2952 NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 DESCRIPTION: The 2SC2592 is a High Frequency Transistor Designed for General Purpose VHF-UHF Amplifier Applications. MAXIMUM RATINGS IC 250 mA VCE 30 V PDISS 3.5 W @ TC = 25 C TJ -65 to +200 C


    Original     		2SC2952 2SC2592 high frequency transistor 2SC2952 S21E NPN silicon high frequency transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Powor Transistors 2SA2110 Silicon PNP epitaxial planar type For low frequency power amplification Complementary to 2SC2590 • Package M Di ain sc te on na tin nc ue e/ d  Features  Absolute Maximum Ratings Ta = 25°C


    Original     		2002/95/EC) 2SA2110 2SC2590 O-126B-A1 PDF

    2SC2590

    Abstract: 2SA1110
    Text: JMnic Product Specification 2SC2590 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SA1110 ・Excellent current IC characteristics of forward current transfer ratio hFE vs. collector ・High transition frequency fT


    Original     		2SC2590 O-126 2SA1110 150mA 200MHz 2SC2590 2SA1110 PDF

    2SA1110

    Abstract: 2SC2590
    Text: JMnic Product Specification 2SA1110 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SC2590 ・Excellent current IC characteristics of forward current transfer ratio hFE vs. collector ・High transition frequency fT


    Original     		2SA1110 O-126 2SC2590 -30mA -150mA -50mA 2SA1110 2SC2590 PDF

    2SA1110

    Abstract: 2SC2590
    Text: Inchange Semiconductor Product Specification 2SA1110 Silicon PNP Power Transistors • DESCRIPTION ·With TO-126 package ·Complement to type 2SC2590 ·Excellent current IC characteristics of forward current transfer ratio hFE vs. collector ·High transition frequency fT


    Original     		2SA1110 O-126 2SC2590 -30mA -150mA -50mA 2SA1110 2SC2590 PDF

    2SA1110

    Abstract: 2SC2590
    Text: SavantIC Semiconductor Product Specification 2SA1110 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SC2590 ·Excellent current IC characteristics of forward current transfer ratio hFE vs. collector ·High transition frequency fT


    Original     		2SA1110 O-126 2SC2590 -30mA -150mA -50mA 2SA1110 2SC2590 PDF

    2SA1110

    Abstract: 2SC2590
    Text: Power Transistors 2SC2590 Silicon NPN epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SA1110 8.0+0.5 –0.1 3.2±0.2 0.75±0.1 11.0±0.5 3.05±0.1 • Excellent current IC characteristics of forward current transfer ratio


    Original     		2SC2590 2SA1110 2SA1110, O-126B 2SA1110 2SC2590 PDF

    2SC2594

    Abstract: No abstract text available
    Text: Power Transistors 2SC2594 Silicon NPN epitaxial planar type For low-frequency power amplification/ stroboscope/converter Unit: mm 7.5+0.5 –0.1 2.9±0.2 1.9±0.1 • Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)


    Original     		2SC2594 O-126A-A1 2SC2594 PDF

    Vbe 8 V

    Abstract: 2SC2594
    Text: Power Transistors 2SC2594 Silicon NPN epitaxial planar type For low-frequency power amplification/ stroboscope/converter Unit: mm 7.5+0.5 –0.1 2.9±0.2 16.0±1.0 1.9±0.1 • Low collector-emitter saturation voltage VCE sat • Satisfactory operation performances and high efficiency with a lowvoltage power supply


    Original     		2SC2594 Vbe 8 V 2SC2594 PDF

    2SC2590

    Abstract: 2SA1110
    Text: SavantIC Semiconductor Product Specification 2SC2590 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SA1110 ·Excellent current IC characteristics of forward current transfer ratio hFE vs. collector ·High transition frequency fT


    Original     		2SC2590 O-126 2SA1110 150mA 200MHz 2SC2590 2SA1110 PDF

    2SA1112

    Abstract: 2sc2592
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1112 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -180V (Min) ·Good Linearity of hFE ·Complement to Type 2SC2592 APPLICATIONS ·Designed for audio frequency drivers and high power


    Original     		2SA1112 -180V 2SC2592 -500mA; -50mA -150mA; 2SA1112 2sc2592 PDF

    2SA1110

    Abstract: 2SC2590
    Text: 2SA1110 P ow er T ransistors 2SA1110 Silicon PNP Epitaxial Planar Type Package Dim ensions A F Pow er Amplifier Com plem entary Pair with 2SC2590 • Features • Good linearity of DC current gain I i f e • High transition frequency (fT) • 40~60W output driver in complementary pair with 2SC2590


    OCR Scan     		2SA1110 2SC2590 O-126 2SA1110 2SC2590 PDF

    2SA1111

    Abstract: 2SA1112 2SC2591 2sc2592 fr 3702
    Text: Power T ransistors 2SA1111, 2SA1112 2SA1111, 2SA1112 Silicon PNP Epitaxial Planar Type Package Dimensions ÂF Drivers, High Power Amplifiers Complementary Pair with 2SC2591, 2SC2592 •Features Unit ! mm 10.5 ± 0-5 £ 4.8max. 9.8max. 1.5max. Om U ev*’7‘ 7.6m in.


    OCR Scan     		2SA1111, 2SA1112 2SC2591, 2SC2592 0-100W 2SA1111 2SA1112 2SC2591 2sc2592 fr 3702 PDF

    2SC2591

    Abstract: 2sc2592 2SA1111 2SA1112 2SC2591/2592
    Text: 2SC 2591, 2SC 2592 Power T ransistors 2SC2591, 2SC2592 Silicon NPN Epitaxial Planar Type P ackage Dim ensions AF Driver, High Pow er Am plifier C om plem entary Pair with 2 S A 1 111, 2 S A 1 112 Unit 1 mm 10.5 + 0.5 Oirt 9.8max., 7.6min. • Features • Very good linearity of DC current gain Iife


    OCR Scan     		2SC2591, 2SC2592 0--100W 2SA1111 2SA1112 2SC2591 2SC2592 2SA1112 2SC2591/2592 PDF

    2SC2633

    Abstract: 2SC2590 2SA1110 2SA1125 2SA1254 2SC2206 2SA111 2SA11 CC1216
    Text: PANASONIC INDL/ELEK-CSEPII} h =5yV7S> ' 7SC T 3 D | bT3SflS4 3 I - 7 □□ÔûfiGfi 2 S A in o 2SA1110 y U 3 > P N P x fcf£ ¿ r i s T \s~f\s 2SC2590 fc a y y i j > • If • ■ i~ f î2 /S i P N P Epitaxial Planar Power Amplifier >) /'Complementary Pair with


    OCR Scan     		2SA111Q 2SA1110 2SC2590 2SC2590 -99-i-l 100MHz 2SC2633 2SA1110 2SA1125 2SA1254 2SC2206 2SA111 2SA11 CC1216 PDF

    2SC2594

    Abstract: 2SC2636
    Text: P A N A S O N I C I N D L / E L E K - C S E M I } 75 C D | b13EflSM □DDTEDT 3 2SC2594 2SC2594 '> iJ N P N x b° £ ^ '> t u— N P N Epitaxial Planar Power Amplifier ^ h P ^ f f l / F o r Electronic Flash Unit zj w c — £ /C on v erter • # • it /F e a t u r e s


    OCR Scan     		2SC2594 O-126 200MHz 2SC2594 2SC2636 PDF