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    2SA111 Search Results

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    2SA111 Price and Stock

    Panasonic Electronic Components 2SA11100Q

    TRANS PNP 120V 0.5A TO126B-A1
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    DigiKey 2SA11100Q Bulk
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    Orion Fans OA172SAP-11-1TBIP55

    AC Fans Axial Fan, 150x172x51mm, 115VAC, 226CFM, 31W, 58dBA, Ball, Terminal, IP55
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics OA172SAP-11-1TBIP55 8
    • 1 $51.9
    • 10 $46.97
    • 100 $39.86
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    Sanken Electric Co Ltd 2SA1116

    Bipolar Junction Transistor, PNP Type, TO-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SA1116 80
    • 1 $20.8728
    • 10 $20.8728
    • 100 $16.2344
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    2SA111 Datasheets (99)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SA111 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SA111 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA111 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SA111 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SA111 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA111 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA111 Unknown Cross Reference Datasheet Scan PDF
    2SA1110 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SA1110 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1110 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SA1110 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SA1110 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA1110 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1110 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SA1110 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1110 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SA1110 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1110 Unknown Cross Reference Datasheet Scan PDF
    2SA1110 Unknown Transistor Replacements Scan PDF
    2SA1110 Panasonic SI PNP EPITAXIAL PLANAR Scan PDF

    2SA111 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC2591

    Abstract: 2SC2592
    Text: Inchange Semiconductor Product Specification 2SC2591 2SC2592 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SA1111/1112 ・Good linearity of hFE ・High VCEO APPLICATIONS ・For audio frequency, high power amplifiers application


    Original     		PDF 2SC2591 2SC2592 O-220 2SA1111/1112 O-220) 2SC2591 500mA 2SC2592

    2SA1112

    Abstract: 2Sa1111
    Text: Inchange Semiconductor Product Specification 2SA1111 2SA1112 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC2591/2592 ·Good linearity of hFE ·High VCEO APPLICATIONS ·For audio frequency, high power amplifiers application


    Original     		PDF 2SA1111 2SA1112 O-220 2SC2591/2592 O-220) 2SA1111 -120V; 2SA1112

    2Sa1111

    Abstract: 2SA1112
    Text: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1111 2SA1112 DESCRIPTION •With TO-220 package ·Complement to type 2SC2591/2592 ·Good linearity of hFE ·High VCEO APPLICATIONS ·For audio frequency, high power amplifiers application


    Original     		PDF 2SA1111 2SA1112 O-220 2SC2591/2592 O-220) 2SA1111 -120V; 2SA1112

    2SA1111

    Abstract: 2SC2591
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1111 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -150V (Min) ·Good Linearity of hFE ·Complement to Type 2SC2591 APPLICATIONS ·Designed for audio frequency drivers and high power


    Original     		PDF 2SA1111 -150V 2SC2591 -500mA; -50mA -150mA; 2SA1111 2SC2591

    2SA1110

    Abstract: 2SC2590
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1110 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -120V (Min) ·Good Linearity of hFE ·Complement to Type 2SC2590 APPLICATIONS ·Designed for audio frequency power amplifier applications.


    Original     		PDF 2SA1110 -120V 2SC2590 -300mA; -30mA -150mA; -500mA; 2SA1110 2SC2590

    Untitled

    Abstract: No abstract text available
    Text: Jei5.su , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA1112 Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown VoltageV(BR)CEo=-180V(Min) • Good Linearity of MFE


    Original     		PDF 2SA1112 -180V 2SC2592 O-220C -100u -500mA; -50mA -50rnA

    2SC2590

    Abstract: 2SA1110
    Text: JMnic Product Specification 2SC2590 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SA1110 ・Excellent current IC characteristics of forward current transfer ratio hFE vs. collector ・High transition frequency fT


    Original     		PDF 2SC2590 O-126 2SA1110 150mA 200MHz 2SC2590 2SA1110

    2SA1110

    Abstract: 2SC2590
    Text: JMnic Product Specification 2SA1110 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SC2590 ・Excellent current IC characteristics of forward current transfer ratio hFE vs. collector ・High transition frequency fT


    Original     		PDF 2SA1110 O-126 2SC2590 -30mA -150mA -50mA 2SA1110 2SC2590

    2SA1117

    Abstract: 2sa111
    Text: Inchange Semiconductor Product Specification 2SA1117 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·High power dissipations APPLICATIONS ·For power switching amplifier and general purpose applications PINNING see Fig.2 PIN DESCRIPTION 1


    Original     		PDF 2SA1117 -50mA -200V; 2SA1117 2sa111

    2SA1110

    Abstract: 2SC2590
    Text: Inchange Semiconductor Product Specification 2SA1110 Silicon PNP Power Transistors • DESCRIPTION ·With TO-126 package ·Complement to type 2SC2590 ·Excellent current IC characteristics of forward current transfer ratio hFE vs. collector ·High transition frequency fT


    Original     		PDF 2SA1110 O-126 2SC2590 -30mA -150mA -50mA 2SA1110 2SC2590

    2SA1110

    Abstract: 2SC2590
    Text: SavantIC Semiconductor Product Specification 2SA1110 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SC2590 ·Excellent current IC characteristics of forward current transfer ratio hFE vs. collector ·High transition frequency fT


    Original     		PDF 2SA1110 O-126 2SC2590 -30mA -150mA -50mA 2SA1110 2SC2590

    2SA1110

    Abstract: 2SC2590
    Text: Power Transistors 2SC2590 Silicon NPN epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SA1110 8.0+0.5 –0.1 3.2±0.2 0.75±0.1 11.0±0.5 3.05±0.1 • Excellent current IC characteristics of forward current transfer ratio


    Original     		PDF 2SC2590 2SA1110 2SA1110, O-126B 2SA1110 2SC2590

    2SC2590

    Abstract: 2SA1110
    Text: SavantIC Semiconductor Product Specification 2SC2590 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SA1110 ·Excellent current IC characteristics of forward current transfer ratio hFE vs. collector ·High transition frequency fT


    Original     		PDF 2SC2590 O-126 2SA1110 150mA 200MHz 2SC2590 2SA1110

    2SA1117

    Abstract: "SILICON GENERAL" PACKAGE OUTLINE
    Text: SavantIC Semiconductor Product Specification 2SA1117 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·High power dissipations APPLICATIONS ·For power switching amplifier and general purpose applications PINNING see Fig.2 PIN DESCRIPTION 1


    Original     		PDF 2SA1117 -50mA -200V; 2SA1117 "SILICON GENERAL" PACKAGE OUTLINE

    2SC2608

    Abstract: 2SA1117 pnp 200v 5a switching times
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1117 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -200V(Min.) ·High Power Dissipation ·Complement to Type 2SC2608 APPLICATIONS ·Designed for general purpose applications.


    Original     		PDF 2SA1117 -200V 2SC2608 -50mA; -200V; 2SC2608 2SA1117 pnp 200v 5a switching times

    2SA1112

    Abstract: 2sc2592
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1112 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -180V (Min) ·Good Linearity of hFE ·Complement to Type 2SC2592 APPLICATIONS ·Designed for audio frequency drivers and high power


    Original     		PDF 2SA1112 -180V 2SC2592 -500mA; -50mA -150mA; 2SA1112 2sc2592

    2SC2607

    Abstract: 2SA1116 pnp 200v 5a switching characteristics pnp 200v 5a switching times 2SA1116 equivalent
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1116 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -200V(Min.) ·High Power Dissipation ·Complement to Type 2SC2607 APPLICATIONS ·Designed for general purpose applications.


    Original     		PDF 2SA1116 -200V 2SC2607 -50mA; -200V; 2SC2607 2SA1116 pnp 200v 5a switching characteristics pnp 200v 5a switching times 2SA1116 equivalent

    2SA1111

    Abstract: 2SA1112
    Text: AOK AOK Semiconductor Product Specification 2SA1111 2SA1112 S ilicon PNP P o w er Transistors D E S C R IP T IO N • W ith T O -2 2 0 package • C o m p lem en t to type 2 S C 2 5 9 1 /2 5 9 2 • G ood linearity of hFE • H igh V ceo A P P L IC A T IO N S


    OCR Scan     		PDF 2SA1111 2SA1112 T0-220 2SC2591/2592 O-220) 2SA1112

    2SA1110

    Abstract: 2SC2590
    Text: 2SA1110 P ow er T ransistors 2SA1110 Silicon PNP Epitaxial Planar Type Package Dim ensions A F Pow er Amplifier Com plem entary Pair with 2SC2590 • Features • Good linearity of DC current gain I i f e • High transition frequency (fT) • 40~60W output driver in complementary pair with 2SC2590


    OCR Scan     		PDF 2SA1110 2SC2590 O-126 2SA1110 2SC2590

    2SA1111

    Abstract: 2SA1112 2SC2591 2sc2592 fr 3702
    Text: Power T ransistors 2SA1111, 2SA1112 2SA1111, 2SA1112 Silicon PNP Epitaxial Planar Type Package Dimensions ÂF Drivers, High Power Amplifiers Complementary Pair with 2SC2591, 2SC2592 •Features Unit ! mm 10.5 ± 0-5 £ 4.8max. 9.8max. 1.5max. Om U ev*’7‘ 7.6m in.


    OCR Scan     		PDF 2SA1111, 2SA1112 2SC2591, 2SC2592 0-100W 2SA1111 2SA1112 2SC2591 2sc2592 fr 3702

    2SC2633

    Abstract: 2SC2590 2SA1110 2SA1125 2SA1254 2SC2206 2SA111 2SA11 CC1216
    Text: PANASONIC INDL/ELEK-CSEPII} h =5yV7S> ' 7SC T 3 D | bT3SflS4 3 I - 7 □□ÔûfiGfi 2 S A in o 2SA1110 y U 3 > P N P x fcf£ ¿ r i s T \s~f\s 2SC2590 fc a y y i j > • If • ■ i~ f î2 /S i P N P Epitaxial Planar Power Amplifier >) /'Complementary Pair with


    OCR Scan     		PDF 2SA111Q 2SA1110 2SC2590 2SC2590 -99-i-l 100MHz 2SC2633 2SA1110 2SA1125 2SA1254 2SC2206 2SA111 2SA11 CC1216

    2SA1301 TOSHIBA

    Abstract: da 1191 2sa970 Toshiba 2SB754 2SA904A 2SA1038 2Sa1173 2SA1323 2SB646 2SA1782
    Text: - 24 Si - tt « € Manuf- B S 5 a a h h = SANYO » 2SA1115 * TOSHIBA $ m b NEC ÍL HITACHI 1onn 2SA1782 2SA1048 2SA1782 2SA1048CL 3t 3? X 3Ë K «£ « T -y-viry 0 3Ï 0 ÍL B ÍL 0 ÍL 2SA1249 2SA1162 2SA1337 2SA1220A 2SA812 ZSB631K 2SB827 2SB817 2SA1207


    OCR Scan     		PDF 2SA1415 2SA1782 2SA1048 2SA1127 SA1299 2SA933S 2SA104S 2SA1337 SA112 2SA1301 TOSHIBA da 1191 2sa970 Toshiba 2SB754 2SA904A 2SA1038 2Sa1173 2SA1323 2SB646

    2SB1545

    Abstract: 2SA1309 2SA1776 2sa1015 2SA170B 2sa1115 2SA1383 2SA1091 2Sa1744 2SB709
    Text: - 40 - S s T y p e No. tt S Manuf. 2SA 1750 H 2SA 1751 H # 2SA 1752 H $ 2SA 1753 H if 2SA. 1755 ^ B ÍL 2SA 1757 . * h SANYO * S T O S HIBA # S NEC ï 3 HITACHI I ± I FUJITSU fâ T MATSUSHITA 2SA1156 2SA1110 2SA1383 2SA15 3 5 A m = MITSUBISHI 2SA1121 2SB970


    OCR Scan     		PDF 2SA1156 2SA1110 2SA1383 2SA1535A 2SA1535 2SA1182 2SA1464 2SA1121 2SB970 2SB1545 2SA1309 2SA1776 2sa1015 2SA170B 2sa1115 2SA1383 2SA1091 2Sa1744 2SB709

    2SA1115

    Abstract: 2SA1115 F 2SA1115 G 2SA1115 E 2sa1115 transistor Silicon PNP epitaxial
    Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1115 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1115 is a silicon PNP epitaxial type transistor designed tor low OUTLINE DRAWING Unft:mm 4.3MAX frequency voltage amplify application. Small package for easy mounting.


    OCR Scan     		PDF 2SA1115 2SA1115 -100mA, -10mA) f-270Hz 270Hz X10-3 2SA1115 F 2SA1115 G 2SA1115 E 2sa1115 transistor Silicon PNP epitaxial