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    2SC2440 Search Results

    2SC2440 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SC2440 Fuji Electric Power Transistor Original PDF
    2SC2440 Fuji Electric V(cbo): 450V V(ceo): 400V V(ceo): 400V 5A 40W mold type high speed switching bipolar transistor Scan PDF
    2SC2440 Unknown Scan PDF
    2SC2440 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC2440 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC2440 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC2440 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC2440 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC2440 Unknown Japanese Transistor Cross References (2S) Scan PDF

    2SC2440 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRIPLE DIFFUSED PLANER TYPE HIGH CURRENT HIGH SPEED

    Abstract: 2sc2440
    Text: 2SC2440 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING Outline Drawings TO-220AB Features High voltage,High speed switching High reliability Applications 1 : Base 2 : Collector Switching regulators Ultrasonic generators


    Original     		PDF 2SC2440 O-220AB SC-46 TRIPLE DIFFUSED PLANER TYPE HIGH CURRENT HIGH SPEED 2sc2440

    2sc2440

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1463G Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SC2440G • Package • High collector-emitter voltage (Base open) VCEO


    Original     		PDF 2002/95/EC) 2SB1463G 2SC2440G 2sc2440

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1463G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high breakdown voltage low-noise amplification Complementary to 2SC2440G • Features ue pl d in an c


    Original     		PDF 2002/95/EC) 2SB1463G 2SC2440G

    npn transistors 400V 3A

    Abstract: 2SC2440 high frequency npn transistors 400V 3A
    Text: SavantIC Semiconductor Product Specification 2SC2440 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High voltage ,high speed switching ·High reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters


    Original     		PDF 2SC2440 O-220C npn transistors 400V 3A 2SC2440 high frequency npn transistors 400V 3A

    2SB1463J

    Abstract: SC-89
    Text: Transistors 2SB1463J Silicon PNP epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 Unit: mm 0.80±0.05 For high breakdown voltage low-noise amplification Complementary to 2SC2440J 0.12+0.03 –0.01 0 to 0.02 0.50 (0.50) • Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 2SB1463J 2SC2440J 2SB1463J SC-89

    2SB1463J

    Abstract: SC-89
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1463J Silicon PNP epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 Unit: mm 0.80±0.05 For high breakdown voltage low-noise amplification Complementary to 2SC2440J 0.12+0.03 –0.01


    Original     		PDF 2002/95/EC) 2SB1463J 2SC2440J 2SB1463J SC-89

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1463J Silicon PNP epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 Unit: mm 0.80±0.05 For high breakdown voltage low-noise amplification Complementary to 2SC2440J 0.12+0.03 –0.01


    Original     		PDF 2002/95/EC) 2SB1463J 2SC2440J

    2SC2440

    Abstract: 2SC244
    Text: Inchange Semiconductor Product Specification 2SC2440 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High voltage ,high speed switching ・High reliability APPLICATIONS ・Switching regulators ・Ultrasonic generators ・High frequency inverters


    Original     		PDF 2SC2440 O-220C 2SC2440 2SC244

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1463G Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SC2440G • Package • High collector-emitter voltage (Base open) VCEO


    Original     		PDF 2002/95/EC) 2SB1463G 2SC2440G

    2SC2440

    Abstract: npn transistors 400V 3A
    Text: JMnic Product Specification 2SC2440 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High voltage ,high speed switching ・High reliability APPLICATIONS ・Switching regulators ・Ultrasonic generators ・High frequency inverters ・General purpose power amplifiers


    Original     		PDF 2SC2440 O-220C 2SC2440 npn transistors 400V 3A

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1463G Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SC2440G • Features ■ Package • High collector-emitter voltage (Base open) VCEO


    Original     		PDF 2002/95/EC) 2SB1463G 2SC2440G

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1463G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high breakdown voltage low-noise amplification Complementary to 2SC2440G • Package • High collector-emitter voltage (Base open) VCEO


    Original     		PDF 2002/95/EC) 2SB1463G 2SC2440G

    2SC2440

    Abstract: 2sc244 JEDEC 2a
    Text: 2SC2440 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING Outline Drawings TO-220AB Features High voltage,High speed switching High reliability Applications 1 : Base 2 : Collector Switching regulators Ultrasonic generators


    Original     		PDF 2SC2440 O-220AB 2SC2440 2sc244 JEDEC 2a

    2SB1463J

    Abstract: SC-89
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1463J Silicon PNP epitaxial planar type 1.60+0.05 –0.03 0.12+0.03 –0.01 M Di ain sc te on na tin nc ue e/ d 1.00±0.05 Unit: mm 0.80±0.05 For high breakdown voltage low-noise amplification


    Original     		PDF 2002/95/EC) 2SB1463J 2SC2440J 2SB1463J SC-89

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    2SC2412KLN

    Abstract: 2SC2494 2SC2431 HF 450 2SC2442 2SC2494-MA 2SC2410S 2SC2411K 2SC2412K 2SC2427
    Text: - 124 - w X Ë fà Ta=25U *EP(áTc=25'G m 2SC2410S 2SC2411K 2SC2412K 2SC2412KLN 2SC2413K 2SC2427 2SC2428 2SC2429 2SC2429A 2SC2430 2SC2431 2SC2432 2SC2433 2SC2434 2SC2437 2SC2438 2SC2440 2SC2442 2SC2443 2SC2458 2SC2458L 2SC2459 2SC2462 2SC2463 2SC2464 2SC2465


    OCR Scan     		PDF 2SC2410S 2SC2411K 2SC2412K 2SC2412KLN 2SC2413K 2SC2427 2SC2428 SC-59 2SC2463 900MHz 2SC2494 2SC2431 HF 450 2SC2442 2SC2494-MA 2SC2427

    2SC2494

    Abstract: 2SC2553 2SC2431 2SC2534 2SC2495 2SC2430 2SC2443 2SC2530 2sc2555 2SC2410S
    Text: - 124 - w X Ë f à m 2SC2410S 2SC2411K 2SC2412K 2SC2412KLN 2SC2413K 2SC2427 2SC2428 2SC2429 2SC2429A 2SC2430 2SC2431 2SC2432 2SC2433 2SC2434 2SC2437 2SC2438 2SC2440 2SC2442 2SC2443 2SC2458 2SC2458L 2SC2459 2SC2462 2SC2463 2SC2464 2SC2465 2SC2466 2SC2467 2SC2468


    OCR Scan     		PDF 2SC2410S 2SC2411K 2SC2412K 2SC2412KLN 2SC2413K 2SC2427 2SC2428 2SC2543 2SC2544 2SC2545 2SC2494 2SC2553 2SC2431 2SC2534 2SC2495 2SC2430 2SC2443 2SC2530 2sc2555

    2sc2440

    Abstract: No abstract text available
    Text: 2SC2440 H ± ' < t7 - Y :7 > Ì > Z . 9 N P N = f ii£ t f t ^ U — -f-M TRIPLE DIFFUSED PLANER TYPE *WJ±, * * * f HIGH VOLTAGE, HIGH SPEED SWITCHING • fl-Jfé'ÎîÈ : Outline Drawings 4.5*02 13 Features • ¡iifiiS,iSijSx -f 'y + 's V • S iffS t i


    OCR Scan     		PDF 2SC2440 O-22QAB SC-46 I95t/R89) Shl50 2sc2440

    2SC2440

    Abstract: No abstract text available
    Text: 2SC2440 % ± '< r7 - \ =7 > tS * . 9 N P N = f i i £ t f t ^ U — -f-M T R IPLE D IFFU SED PLA N ER TYPE *WJ±, * * * f HIGH VOLTAGE, HIGH SPEED SWITCHING • fl-Jfé'ÎîÈ : Outline Drawings • ¡iif iiS , • S if f S t £ Features "/¥>? High voltage, high speed switching


    OCR Scan     		PDF 2SC2440 O-22QAB SC-46 2SC2440

    C2482

    Abstract: C3468 2SC2663 2Sc3468 2SC3208 c2981 C2787 M 3211 2sc1510 C1573
    Text: - 15 6 - §ä « Type No. a « Manuf. 2SC 3186 •tf-VÍTV 2SC 3187 ✓ tö T 2SC 3189 = 2SC 3190 *' »Hm? nam ? »am ? ita -?«a«? »a«? ttS « T 2SC 3191 2SC 3192 * 2SC 3193 ' 2SC 3194 / ¿ 2SC 3195 2SC 3196 TOSHIBA «am i »am ? 2SC 3199 X S a ts NEC


    OCR Scan     		PDF 2SD1085 2SC3468 2SC2551 2SC3415 2SD1069 2SD772 2SC1570 2SC941TM 2SC458 2SC3311A C2482 C3468 2SC2663 2SC3208 c2981 C2787 M 3211 2sc1510 C1573

    6DI15S-050

    Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
    Text: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140


    OCR Scan     		PDF 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 1DI200Z-120 1DI200ZN-120 1DI200ZP-120 1DI300M-050 6DI15S-050 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050

    ET-191

    Abstract: No abstract text available
    Text: TRANSISTORS IC AM PS Max. 3 5 IC AM PS Max. VceoV Pc su s W 800 Pc W 80 Device Type NPN 2SC3550 400 60 180 80 2SD921 800 40 Device Type NPN 2SC2929 2SC3549 800 80 2SC3551 50 25 2SD1157 1000* 80 ET383 200 25 2SD834 250 60 2SD1073 100 80 ET393 -80 30 2SB862*


    OCR Scan     		PDF 2SD921 2SC2929 2SC3549 2SC3551 2SD1157 2SC3550 ET383 2SD834 2SD1073 ET393 ET-191

    2sc4977

    Abstract: transistor 2SC4977 25c2625 2SC2625 2SC2047 2SC4977 transistor ET-191 2SC4795 2SC3320 ET391
    Text: FUJI <S SWITCHING TRANSISTORS B| TO-220AB T O -3 P • t ' 5 /% ■m * 1 * 1 T O -3 P F BBS 1C AMPS Max. 3 80 Device Type NPN 2SC3550 180 80 2SD921 800 80 2SC3551 1000* 80 ET383 V ceoV sus 800 5 Pc W IC AMPS Max. 400 60 Device Type NPN 2SC2929 800 40 2SC3549


    OCR Scan     		PDF 2SC3550 2SD921 2SC3551 ET383 2SC3505 2SC4419 2SC2656 2SC3030 ET190 2SD923 2sc4977 transistor 2SC4977 25c2625 2SC2625 2SC2047 2SC4977 transistor ET-191 2SC4795 2SC3320 ET391

    2sb757

    Abstract: 2SC3551
    Text: « /\°7 —x / W X / Power Devices • / S '7 -h 7 i- iS / K f l'7 Power Transistor (Molded types) r a iÎŒ i li M T .'f y 3 - > ? b ~ 7 > v High voltage high speed switching transisitors V it e Voits tc Cent. Amps. Pc : fere (Mié.) Watts to Amps. VCE


    OCR Scan     		PDF 2SC3549 2SC3550 2SC3551 2SC3505 2SC4419 2SC3030 O-22QAB 1D500A-030 ETN35-030 ETM36-030 2sb757